非晶硒对X射线光电转换特性的研究

非晶硒X射线光电导具有很高的固有空间分辨率,有可能研制探测X射线成象的平板化数字器件,在探测X射线成象方面倍受注目.它对X射线的光电转换特性和灵敏度是重要的性能参数之一.我们制作了约400μm厚的非晶硒膜,在1～12.5V/μm场强范围,0.2～12mR/s照射率范围测量了X射线光电流值.实验结果显示,非晶硒具有线性的光电转换特性,其灵敏度随场强的增加而增加.计算表明,对于医疗诊断常用的轫致辐射X射线谱,用X射线在非晶硒中产生一电子-空穴对所需的能量W±约50eV(10V/μm场强)     

Imaging method of single layer graphene on metal substrate based on imaging ellipsometer with large field of view

Single layer lattice graphene deposited on the metal substrate can hardly be imaged by the optical microscope. In this Letter, a large field-of-view imaging ellipsometer is introduced to image single layer graphene which is deposited on a metal substrate. By adjusting the polarizer and the analyzer of imaging ellipsometer, the light reflected from surfaces of either single layer graphene or a Au film substrate can be extinguished, respectively.Thus, single layer graphene can be imaged correspondingly under brightfield or darkfield imaging modes. The method can be applied to imaging large-area graphene on a metal substrate.     

无基底焦平面阵列的红外成像性能分析

利用提出的光学读出非制冷红外成像系统,先后制作了单元尺寸各不相同的单层膜无基底焦平面阵列(focal plane array,FPA),获得了室温物体的热图像.分析发现,当FPA的单元尺寸从200μm逐渐减小到60μm时,基于恒温基底模型的理论响应与实验结果的偏差逐渐增大.通过有限元分析方法,模拟分析了不同尺寸的微梁单元在无基底FPA中的热学行为,发现了当单元尺寸逐渐减小时恒温基底模型偏差逐渐增大的原因,即无基底FPA的支撑框架不满足恒温基底条件,受热辐射后支撑框架的温升从基底上抬高了单元的温升.论文还分 关键词： 光学读出 非制冷红外成像 焦平面阵列 无基底     

Graphene-based passively Q-switched 2 μm thulium-doped fiber laser

We demonstrated stable pulses generation at 2 μm in a passively Q-switched thulium-doped fiber laser using a few layer graphene thin film. The maximum output power was 4.5 mW and the single pulse energy was 85 nJ at 53 kHz repetition rate, and the pulse width was about 1.4 μs. The pulse width and the repetition rate of the Q-switched fiber laser can be changed along with the pump power. To the best of our knowledge, this is the first report of graphene saturable absorber for passively Q-switched 2 μm fiber lasers.     

基于石墨烯谐振沟道晶体管的高频纳米机电系统信号读取研究

结合石墨烯场效应晶体管和机械谐振原理,研究了基于本地背栅石墨烯谐振沟道晶体管(RCT) 的高频机械信号直接读取方法.利用机械剥离法获得的石墨烯,提出了一种基于刻蚀技术的器件制备方法, 并实现了栅长和栅宽分别为1 μm的本地背栅RCT.实验结果表明,在室温下RCT的谐振频率范围为57.5–88.25 MHz.研究结果对加速石墨烯纳米机电系统和高频低噪声器件的应用有着重要作用. 关键词： 石墨烯 谐振沟道晶体管 纳米机电系统     

Concept of infrared photodetector based on graphene–graphene nanoribbon structure

We study the mechanisms of photoconductivity in graphene layer–graphene nanoribbon–graphene layer (GL–GNR–GL) structures with the i-type gapless GL layers as sensitive elements and I-type GNRs as barrier elements. The effects of both an increase in the electron and hole densities under infrared illumination and the electron and hole heating and cooling in GLs are considered. The device model for a GL–GNR–GL photodiode is developed. Using this model, the dark current, photocurrent, and responsivity are calculated as functions of the structure parameters, temperature, and the photon energy. The transition from heating of the electron–hole plasma in GLs to its cooling by changing the incident photon energy can result in the change of the photoconductivity sign from positive to negative. It is demonstrated that GL–GNR–GL photodiodes can be used in effective infrared and terahertz detectors operating at room temperature. The change in the photoconductivity sign can be used for the discrimination of the incident radiation with the wavelength 2–3 μm and 8–12 μm.     

Numerical simulation of low loss silicon photonic wire waveguide with multiple cladding layers

A different silicon photonic wire waveguide is proposed, which uses multiple thin cladding layers in order to reduce the index contrast between core and cladding interface. The reduced index contrast in the proposed waveguide has led to reduction in the scattering losses by 37% as compared to silicon wire waveguide for 400 nm × 220 nm waveguide dimension. The proposed waveguide has shown significant reduction in bending losses. It offers the bending loss of 0.0118 dB at the radius of 1 μm and 0.0063 dB for a radius of 2 μm at 1.55 μm wavelength as compared to 0.086 and 0.013 dB at the radius of 1 and 2 μm, respectively, offered by silicon photonic wire waveguide at 1.5 μm wavelength. The use of polymer material as top cladding layer resulted in decreasing the sensitivity of effective index against temperature for the designed waveguide by a factor of 2 as compared to silicon wire waveguide.     

不同基底石墨烯涂层的层间滑移减磨性能研究

石墨烯薄膜作为一种二维材料,是提高微/纳机电系统(MEMS/NEMS)摩擦力学性能的优异润滑剂.为了探究基底材料和石墨烯层数对其减磨性能的影响,本文通过在不同基底制备了不同层数的石墨烯涂层,利用原子力显微镜(AFM)实验和分子动力学(MD)仿真结合的方法,研究了石墨烯层数对减磨效应的影响.并且通过建立不同层数石墨烯涂层的摩擦性能分析模型,探究出石墨烯层间滑移是产生减磨的主要因素.结果表明:在不同载荷下,石墨烯涂层对硅基底和铜基底均有优异的减磨效果,摩擦力随着石墨烯层数的增加逐渐降低,当石墨烯层数大于10层时,达到最优99.3%的减磨效果.通过仿真分析发现,随着层数增加,石墨烯与基底的干摩擦转变为石墨烯的层间摩擦,并产生层间剪切滑移,石墨烯层间滑移是导致多层石墨烯优异减磨性能的主要因素.     

高Q值薄壁液芯毛细管微腔电场传感器

为提高电场传感器的抗电磁干扰能力、灵敏度和稳定性,将高Q值薄壁液芯毛细管微腔和电泳效应结合,增强回音壁模共振微腔对外加电场的感知能力,并进行了实验验证.基于时域有限差分法得到了液芯毛细管微腔回音壁模式共振特性随毛细管直径、壁厚等结构参数的变化规律,发现随着壁厚变薄灵敏度增加.采用熔融拉锥法制备了直径为86μm,壁厚约为2μm的薄壁毛细管微腔,通过高精度位移平台实现了锥形光纤和毛细管微腔的高效率耦合,测得回音壁模式Q值为2.8×10^6.毛细管微腔内注入不同浓度的蛋白质溶液,利用电泳原理和蛋白质分子在缓冲溶液里带电的特性,实现的最大电场传感灵敏度为10.6 pm/(kV/m).     

Two-step method preparation of graphene without hydrogen on methanol pretreatment copper substrate by PECVD at low temperature

Plasma enhanced chemical vapor deposition (PECVD) is one effective method to prepare graphene at low temperature in a short time. However, the low temperature in PECVD could not provide substrate a proper state for large area and few layer graphene preparation. Herein, we propose a two-step method to grow graphene on Cu foils. In the first step, in order to acquire a smooth and oxide-free surface state, methanol was used as a reductant to pretreat Cu. In the second step, graphene films were prepared on Cu foils by PECVD using CH₄ as carbon source with H₂-free. Few-layer graphene sheets with diameter about 1 μm under low temperature (700 °C) and at a short time (10 min) on well pretreated Cu foils were successfully gotten. The effect of methanol pretreatment on graphene synthesis and the graphene growth mechanism on Cu substrate by PECVD are analyzed comprehensively.     

Reliable determination of the few‐layer graphene oxide thickness using Raman spectroscopy

We report on a reference‐free Raman spectroscopy method for a precise thickness determination of the multilayered graphene oxide flakes. The method is based on the normalization of the total integral intensity of D and G Raman bands to the integral intensity of the second‐order optical phonon peak of the silicon substrate in the Raman spectrum. The normalization provides discrete ratio values corresponding to the number of graphene oxide layers in the respective flakes with the intensity linearly increasing with the number of layers. This provides a fast and robust determination of the thickness of graphene oxide flakes in terms of the layer number up to high values. A comparison with conventional spectrally resolved reflectivity mapping shows similar sensitivity, while selectivity to particular functional chemical groups is a bonus of the Raman‐based method. Copyright © 2015 John Wiley & Sons, Ltd.     

Sensitivity enhancement of graphene coated surface plasmon resonance biosensor

In this paper, a highly sensitive surface plasmon resonance biosensor is presented using angular interrogation. Due to low sensitivity of conventional biosensor, graphene/two-dimensional transition metal are used in surface plasmon resonance biosensor to improve the sensitivity. Here, we propose a seven layer model of biosensor which shows by incorporating silicon layer in addition of transition metal dichalcogenides MoS₂ and graphene, the sensitivity of the proposed SPR biosensor can be greatly enhanced than the conventional gold film SPR sensors. It is observed that the highest sensitivity can be obtained by optimizing the structure with 8 nm thickness of silicon layer, one layer of MoS₂ and one layer of graphene. The highest sensitivity of our proposed sensor is 210°/RIU.     

A new analytical model of high voltage silicon on insulator （SOI） thin film devices

A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (V_B,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.     

Structure of graphene nanotube hybrid materials produced via single-stage CVD

The structures of graphene layer-carbon nanotube hybrid films produced via CVD with a single-stage flow of acetylene into a chamber containing a prepared substrate are studied. It is shown that such films have a hybrid double-layer structure consisting of a graphene layer and a dense continuous network of nanotubes. The graphene layer contains continuous extended areas 10–50 μm in size and island areas ～0.1 μm in size. TEM images lead to the conclusion that the graphene layer and carbon nanotubes are bound by covalent bonds.     

3 μm~5 μm中红外激光辐照石墨烯非线性散射实验研究

为了研究石墨烯器件在中红外波段的光限幅机理,采用化学气相沉积法制备出层数可控的石墨烯薄膜CaF2镜片,并基于MgO∶PPLN周期极化晶体搭建了全固态中红外光学参量振荡器,利用3 m~5 m波长可调谐的闲频光开展了石墨烯薄膜散射实验,测量了石墨烯薄膜的散射信号与入射光强度变化的归一化曲线。当闲频光能量超过1 J/cm2时,石墨烯被迅速汽化,电离形成的微小等离子体和石墨烯微片对入射闲频光产生多重非线性散射,散射能量信号呈现出快速非线性增长趋势,并且散射能量信号值的增长率与闲频光的入射波长成反比,与石墨烯的层数成正比关系,从而验证了石墨烯对中红外波段激光较强的非线性散射使其具有光限幅效应。     

Buffer layer free large area bi-layer graphene on SiC(0 0 0 1)

The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (μ-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 °C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage.     

Geometry and temperature effects of the interfacial thermal conductance in copper- and nickel-graphene nanocomposites

Graphene has excellent mechanical, electrical and thermal properties. Recently, graphene-metal composites have been proposed as a means to combine the properties of metals with those of graphene, leading to mechanically, electrically and thermally functional materials. The understanding of metal-graphene nanocomposites is of critical importance in developing next-generation electrical, thermal and energy devices, but we currently lack a fundamental understanding of how their geometry and composition control their thermal properties. Here we report a series of atomistic simulations, aimed at assessing the geometry and temperature effects of the thermal interface conductance for copper- and nickel-graphene nanocomposites. We find that copper-graphene and nickel-graphene nanocomposites have similar thermal interface conductances, but that both cases show a strong performance dependence on the number of graphene layers between metal phases. Single-graphene-layer nanocomposites have the highest thermal interface conductance, approaching ~500 MW m(-2) K(-1). The thermal interface conductance reduces to half this value in metal-bilayer graphene nanocomposites, and for more than three layers of graphene the thermal interface conductances further reduces to ~100 MW m(-2) K(-1) and becomes independent with respect to the number of layers of graphene. This dependence is attributed to the relatively stronger bonding between the metal and graphene layer, and relatively weaker bonding between graphene layers. Our results suggest that designs combining metal with single graphene layers provide the best thermal properties.     

Low energy electron microscopy and photoemission electron microscopy investigation of graphene

Low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) are two powerful techniques for the investigation of surfaces, thin films and surface supported nanostructures. In this review, we examine the contributions of these microscopy techniques to our understanding of graphene in recent years. These contributions have been made in studies of graphene on various metal and SiC surfaces and free-standing graphene. We discuss how the real-time imaging capability of LEEM facilitates a deeper understanding of the mechanisms of dynamic processes, such as growth and intercalation. Numerous examples also demonstrate how imaging and the various available complementary measurement capabilities, such as selected area or micro low energy electron diffraction (μLEED) and micro angle resolved photoelectron spectroscopy (μARPES), allow the investigation of local properties in spatially inhomogeneous graphene samples.     

室温下石墨烯的霍尔效应实验研究

对用化学气相沉积法(CVD)研制的长、宽均为1.23 cm,厚度为3个原子层尺寸的石墨烯样品,进行了室温下的霍尔效应相关研究。实验中电极与石墨烯之间有良好的欧姆接触。通过范德堡法测量了样品在磁场强度为0.353 T,不同电流强度下的霍尔电压,并对结果进行处理分析,得到石墨烯的霍尔系数RH=7.00×10-7m3/C、载流子浓度n=10.52×1024/m3、霍尔元件乘积灵敏度KH=6.87×102m2/C。     

Patterning thin metallic film via laser structured weakly bound template

A weakly bound buffer material is structured on a surface by interfering low power laser beams, as a template for patterning metallic thin films deposited on top. The excess buffer material and metal layer are subsequently removed by a second uniform laser pulse. This laser pre-structured buffer layer assisted patterning procedure is demonstrated for gold layer forming a grating on a single crystal Ru(1 0 0) under UHV conditions, using Xe as the buffer material. Millimeters long, submicron (0.65 μm) wide wires can be obtained using laser wavelength of 1.064 μm with sharp edges of less than 30 nm, as determined by AFM. This method provides an all-in-vacuum metallic film patterning procedure at the submicron range, with the potential to be developed down to the nanometer scale upon decreasing the patterning laser wavelength down to the UV range.