植物照明用荧光粉转换白光二极管的研究

LED具有效率高、体积小、功耗低、寿命长等优点,并且因其具有可轻易实现宽幅光谱调控的特性,在植物照明领域崭露头角。植物照明用LED分为两大类,一类是单色光LED,另一类是白光LED,其中植物照明用白光LED可与单色LED混合或者单独使用从而实现植物补光照明。植物封装用白光LED大部分采用蓝光LED芯片或紫外LED芯片和荧光粉组合实现,即荧光粉转换型白光LED,但是光谱集中于可见光偏蓝,对植物进行光合作用的效率不明显。植物对于光的吸收不是全波段的而是有选择性的,基于植物光合作用吸收光谱的特殊性,将白光LED光谱的显色性能作为评判其光谱是否适合植物生长所需的光质的标准,其平均显色指数Ra,特殊显色指数R9(饱和红光),R12(饱和蓝光)被考虑选择为植物照明用白光LED的主要性能评价参数。为设计出植物进行生长发育所需要的、性能良好的能应用于植物照明领域的白光LED,选用常见商用YAGG为绿色颜色转换材料,选用(Sr, Ca)AlSiN₃为红色颜色转换材料,并用传统高温固相法制备了系列光谱可调的(Sr, Ca)AlSiN₃荧光粉,并进行了光谱性能分析。通过将搭建好的LED结构模型导入光学仿真软件并分别引入绿色荧光粉颗粒、红色荧光粉颗粒以及蓝光芯片的特性参数,在Lighttools中分别建立了单蓝光LED芯片(450 nm)和双蓝光LED芯片(450+470 nm)激发(Sr, Ca)AlSiN₃和YAGG荧光粉组合,实现了白光LED的光学仿真模型,研究了两种激发模式下仿真得到的不同色温白光LED的光谱功率分布及其显色性能。用蓝光LED芯片、(Sr, Ca)AlSiN₃以及YAGG荧光粉组合进行了单芯片和双芯片显色性能差异的封装验证。通过将Sr_0.8Ca_0.12AlSiN₃∶0.08Eu2+和YAGG荧光粉的混合物点涂在双蓝光LED芯片上进行了白光LED的封装制备,获得了Ra=91.2,R9=96.1,R12=78.9,光谱辐射光效LER=126 lm·W-1的高效高显色白光LED其含有植物生长所需要的蓝光和红光。     

Warm-white light-emitting diodes integrated with colloidal quantum dots for high luminous efficacy and color rendering: comment

This is a comment on a previous Letter [Opt. Lett.35, 3372 (2010)]. The chromaticity coordinates of nanocrystal quantum dot (NQD)-integrated WLED1, WLED2, and WLED3 are out of the range of the chromaticity tolerance quadrangles of white light sources. So these NQD WLEDs do not satisfy the requirements recommended for general lighting with solid-state lighting products to ensure high-quality white light. Furthermore, correlated color temperatures of WLED2 and WLED3 should be 2682 and 2527 K, respectively, according to the chromaticity coordinates of WLED2 and WLED3 at 12 mA, not 2781 and 2390 K. The NQD-integrated WLED1 and WLED2 located in tolerance quadrangles are simulated by the changing spectral power of green-, yellow-, and orange-emitting NQDs. The simulation results are presented.     

High scotopic/photopic ratio white-light-emitting diodes integrated with semiconductor nanophosphors of colloidal quantum dots

We propose and demonstrate single-chip white-light-emitting diodes (WLEDs) integrated with semiconductor nanophosphors of colloidal quantum dots for high scotopic/photopic (S/P) ratio. These color conversion WLEDs achieve S/P ratios over 3.00, which exceeds the current limit of 2.50 in common lighting technologies, while sustaining sufficient levels of color rendering index.     

Cesium lead halide perovskite quantum dot-based warm white light-emitting diodes with high color rendering index

White light-emitting diodes (WLEDs) were fabricated by employing a combination of a commercial yellow emission Ce³⁺-doped Y₃Al₅O₁₂ (YAG:Ce)-based phosphor and all-inorganic perovskite quantum dots pumped with blue LED chip. Perovskite quantum dot solution was used as the color conversion layer with liquid-type structure. Red-emitting materials based on cesium lead halide (CsPb(X)₃) perovskite quantum dots were introduced to generate WLEDs with high efficacy and high color rendering index through compensating the red emission of the YAG:Ce phosphor-based commercialized WLEDs. The experimental results suggested that the luminous efficiency and color rendering index of the as-prepared WLED device could reach up to 84.7 lm/W and 89, respectively. The characteristics of those devices including correlated color temperature (CCT), color rendering index (CRI), and color coordinates were observed under different forward currents. The as-fabricated warm WLEDs showed excellent color stability against the increasing current, while the color coordinates shifted slightly from (0.3837, 0.3635) at 20 mA to (0.3772, 0.3592) at 120 mA and color temperature tuned from 3803 to 3953 K.     

High Color-Rendering Index and Stable White Light-Emitting Diodes Based on Highly Luminescent Quantum Dots

Solid-phase color converter-based quantum dots (QDs) white light-emitting diodes (WLEDs) have become promising next-generation solid-state light sources. However, the development of these WLEDs’ production still suffers from constraints involving insufficient color-rendering index (CRI), low color stability, and short operation lifetimes. Here, thick-shell Cd_0.05Zn_0.95S/CdSe/Cd_xZn_1–xS spherical quantum wells are developed with good color tunability from green to red regions and high photoluminescence quantum yield (up to 88% for green wavelengths). QDs with five emission colors are used to fabricate a series of WLEDs, which possess a good correlated color temperature tunability from warm (3210 K) to cool (22 000K) white light, and a high CRI Ra (>90). Specifically, the neutral white light device with Commission Internationale de l´Eclairage (CIE, International Commission on illumination) of (0.36, 0.36) and the standard white light device with CIE of (0.33, 0.33) achieve a CRI Ra up to 95.8 and 95.11, respectively, they also exhibit long operating life and great color stability. These results indicate that the improvement of the performance and stability of the WLED based on thick-shell spherical quantum wells is remarkable progress in the commercialization of QD-based solid-state lighting.     

A model for LED spectra at different drive currents

A mathematical model for the spectra of monocolor light-emitting diodes （LEDs） and phosphor-coated white LEDs at different drive currents is established.The simulation program of the color rendering of a white light LED cluster is developed based on this model.The program can predict not only the spectral power distribution and color rendering index （CRI）,but also the number of LEDs,drive currents,input power,and luminous efficacy of a white light LED cluster at a given color temperature according to the requirement of the luminous flux.The experimental results show that the relative spectral power distributions （SPDs） and chromaticity coordinates of the model LED are very close to that of the real LED at different drive currents.Moreover,the correlated color temperature （CCT）,CRI,special color rendering index （R9） luminous flux,input power,and luminous efficacy of the white light LED cluster predicted by simulation are also very close to the measured values.Furthermore,a white/red cluster with high rendering （CCT=2903 K,CRI=91.3,R9=85） and a color temperature tunable warm-white/red/green/blule LED cluster with high rendering （CCT=2700 6500 K,CRI 〉 90,R9 〉 96） are created.     

Origin of the discrepancy between photoluminescence brightness of TAG:Ce and electroluminescence brightness of TAG:Ce-based white LED expected from phosphor brightness

A yellow-emitting Tb(3)Al(5)O(12):Ce(3+) (TAG:Ce) phosphor was coated on blue light-emitting diodes (LEDs) to obtain white LEDs (WLEDs). Since TAG:Ce showed 90% of the brightness of Y(3)Al(5)O(12):Ce(3+) (YAG:Ce), it was expected that TAG:Ce-based WLEDs showed 90% of brightness of YAG:Ce-based ones. However, the TAG:Ce-based WLED showed 74% of the brightness of YAG:Ce-based one. Considering the density and size of the phosphors, the higher density and larger size of TAG:Ce induced a great deal of sedimentation of TAG:Ce particles in an epoxy resin. It is believed that this is one of main reasons for the reduced optical power of the TAG:Ce-based WLED compared to that of the WLED expected from the brightness of TAG:Ce.     

双波长InGaN/GaN多量子阱发光二极管的光电特性

为了实现高显色指数和流明效率的白光发光二极管,在（0001）蓝宝石衬底上利用金属有机化学气相沉积系统,生长了双波长发射的InGaN/GaN多量子阱发光二极管结构.通过对不同In组分含量的双波长发射发光二极管结构的光致发光和电致发光性能进行分析,结果表明In组分含量对双波长发射发光二极管的光致发光谱的稳定性及发光效率有重要影响.此外,用双蓝光发射的芯片来激发YAG:Ce荧光粉实现了高显色指数白光发射.     

Sr9R2−xEuxW4O24 (R=Gd and Y) red phosphor for near-UV and blue InGaN-based white LEDs

Eu³⁺-activated phosphors, Sr₉R_2?xEu_xW₄O₂₄ (R=Gd and Y ), were prepared by the conventional solid-state reaction method and their photoluminescent properties were studied. The phosphors show intense red emission under 395 and 465 nm light excitation, which is matched with the light-emitting wavelength of a near-UV-emitting and a blue-emitting InGaN chips, respectively. Bright red-light-emitting diodes (LEDs) and white-light-emitting diodes (WLEDs) were fabricated by coating Sr₉Y _0.4Eu_1.6W₄O₂₄ phosphor onto ～395 nm-emitting InGaN chips and ～460 nm blue-emitting InGaN chips, respectively. The good performances of the LEDs demonstrate that the tungstates are suitable for application of near-UV and blue InGaN-based WLEDs.     

CaAlSiN_3∶Eu~(2+)荧光粉掺杂PC透光罩的制备及其在植物灯中的应用

为了实现传统白光LED光源与植物照明用光源之间的快速转换,采用高温熔融造粒的方式制备了不同质量分数CaAlSiN_3∶Eu~(2+)(CASN∶Eu~(2+))掺杂的荧光聚碳酸酯(PC)透光罩,并进行了结构和光学分析。制备了荧光PC透光罩配备的T8型LED灯管,测试了其EL光谱、相关光学性质以及对于生菜的种植效果。结果表明,CASN∶Eu~(2+)荧光粉在掺杂过程中性质稳定,该灯管随着配备的透光罩的荧光粉掺杂浓度的提高,相对应的WLED的色坐标从(0.3272,0.3467)变化到(0.3895,0.3824),色温从5757K下降到3807K,显色指数从70.3上升到77.6,但光效略有减弱。配备了荧光粉质量分数为4‰透光罩的T8型白光LED灯管的光质更适合生菜生长。     

Color gamut variation of LED-lit LCD at different module temperatures

In this paper, we have investigated the color gamut variation of a liquid crystal display (LCD) system with tri-chromatic (red, green and blue) light-emitting diodes (LEDs) as the backlight source at different color and module temperatures. Since the transmission band of a color filter (CF) is broader than those of LEDs, light leakage from the CF results in changes in the color gamut with varying color temperatures. In our case, the color gamut increased and then saturated with increasing color temperatures. The color temperature increased monotonically with increasing module temperatures whereas the color gamut may increase, decrease, or assume an optimized value in different cases. The latter resulted from the temperature-dependent intensity and wavelength variation of the RGB-LEDs. Three sets of tri-chromatic LEDs with different emission wavelengths were used. We have shown that by using green and blue LEDs with longer and shorter emission wavelengths, respectively, crosstalk due to the light leakage could be effectively suppressed. A stably high LCD above 101% NTSC operating over a wide range of module temperatures from 5 to 70 °C was demonstrated, and an optimal color performance with color gamut 102.52% NTSC was obtained at a color temperature of 6500 K and a module temperature of 25 °C.     

基色LED的光谱漂移及其对显色性能影响的研究

发光二极管(LED)因其低功耗、低成本而被广泛应用于大型文字、图形和图像的显示,通过调节红、绿、蓝LED发光的亮度可产生不同显色指数的彩色图像像素。但是LED发光光谱会随环境温度的变化产生漂移,从而对显色性能产生影响。用驱动电流的变化模拟环境温度的变化对三基色LED的光谱漂移进行了测试,分别得到了三基色的漂移特性,提出了单色LED光谱漂移方程及三基色光谱漂移方程组。通过研究不同驱动电流下基色LED的光谱漂移,得到了相应的光谱漂移率。通过分析人眼对颜色宽容量的大小,以及基色LED的最大漂移波长,得到了只有红色LED的色差会影响显示屏显色性能的结论。该研究为彩色LED工程实践中反馈控制消除由基色漂移造成的显色色差提供了一定的理论依据和实验支持。     

White light emission from blue and near ultraviolet light-emitting diodes precoated with a Sr3SiO5:Ce3+,Li+ phosphor

White-light-emitting diodes (WLEDs) were fabricated by combining a yellow Sr3SiO5:Ce3+, Li+ phosphor with a blue light-emitting diode (LED) (460 nm chip) or a near ultraviolet (n-UV) LED (405 nm chip), respectively. Color temperature (Tc) of Sr3SiO5:Ce3+, Li+-based WLEDs could be tuned from 6500 to 100,000 K (blue LED pumping) and from 4900 to 50,000 K (n-UV LED pumping) without mixing with other phosphors. The blue LED-pumped WLED showed excellent white light (luminous efficiency=31.7 lm/W, Tc=6857 K) at 20 mA. This WLED showed a stable color coordinates property against an increase of the forward current. An n-UV LED-pumped WLED also showed bright white light (25.0 lm/W, 5784 K) at 20 mA.     

New collection systems for multi LED light engines

Light emitting diodes (LEDs) have numerous advantages as light sources in projectors. LEDs are more compact, exhibit a larger color gamut, have a longer lifetime, and need a lower supply voltage. However, there is still one important disadvantage: the optical power per unit of étendue (luminance) of an LED is significantly low. As a result of the étendue limitations of LEDs, the projected flux on the screen will not be high. Despite this shortcoming, LED’s are still of great interest for low power applications because of their other superior properties. Thus we collect the available light flux optimally and combine multiple high luminance LEDs within the system. In this study we discuss three collection systems designed to collect the LED flux with high optical efficiency while retaining small device size. The best collection efficiency attained with our collection systems is 96%. The fabrication tolerance and cost of our collection systems are also analyzed.     

基于CuInS2/ZnS核壳结构量子点的高光效暖白光LED

采用逐步热注射法合成了用于白光LED的CuInS₂/ZnS(CIS/ZnS)核壳结构量子点.通过调整Cu/In的比率, 在CuInS₂(CIS)量子点的基础上, 合成了发射波长在570~650 nm之间可调的CIS/ZnS量子点.与CIS量子点的低量子产率相比, 具有核壳结构的CIS/ZnS量子点的量子产率达到了78%.通过在黄光荧光粉YAG :Ce³⁺表面旋涂CIS/ZnS量子点的方式制备了暖白光LED器件.在工作电流为10 mA时, 暖白光LED的发光效率达到了244.58 lm/W.由于CIS/ZnS量子点的加入, 所制备的白光LED器件的显色指数达到86.7且发光颜色向暖色调发生了转移, 相应的色坐标为(0.340 6, 0.369 0).     

Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited]

Halide perovskites have attracted great attention due to their high color purity, high luminance yield, low non-radiative recombination rate, and solution processability. Although the external quantum efficiency of perovskite light-emitting diodes(Pe LEDs) is comparable with that of the organic light-emitting diodes(OLEDs) and quantum-dots light-emitting diodes(QLEDs), the brightness is still low compared with the traditional OLEDs and QLEDs. Herein, we demonstrate high brightness and high-efficiency Cs Pb Br3-based Pe LEDs using interface and bulk controlled nanocrystal growth of the perovskite emission layer. The interface engineering by ethanolamine and bulk engineering by polyethylene glycol led to highly crystallized and cubic-shaped perovskite nanocrystals with smooth and compact morphology. As a result, Pe LEDs with a high brightness of 64756 cd/m~2 and an external quantum efficiency of 13.4% have been achieved.     

使用荧光颜料实现白光LED的研究

研究了利用荧光颜料和InGaN蓝光芯片制成掺杂LED,根据光转换原理,得到白光LED的可能。文章首先对比了普通方法和二次点胶法封装的LED,表明二次点胶法工艺复杂,封装的LED亮度低,不适合LED的制造。其次对普通方法封装的1/1/100,1/1/200,2/1.5/100等不同重量比的ax-17/zq-13/AB胶有机LED实验,发现2/1.5/100的有机LED色坐标(0.32, 0.30),接近等能白光点,相关色温6 290 K,接近日光,是一种比较理想的白光源。     

Yellow-ring measurement of white LED in various lighting environments

White LEDs (WLEDs) have various yellow-ring (YR) effects when projected onto differing backgrounds. These effects are determined by the material that the WLED is projected onto. In our previous study, the YR phenomenon was expressed as the yellow-ring index (YRI), which comprises yellow light intensity (Y) and light intensity (I), and the maximum value of the YRI curve is a crucial optical parameter for determining the degree of the YR phenomenon. This study presents a modified evaluation model using YR degree and four YR diagrams (the YRIs are less than 5, 5 to 10, 10 to 15, and greater than 15) as the criterion for WLED quality control.     

LED用于彩色全息图照明的色度研究

基于制作全息灯箱背光源的需要,从色度上分析研究了发光二极管用于彩色全息图照明的可行性,对使用发光二极管和定向照明卤钨灯照明再现的彩色全息图进行了色度测量与评价.实验测量并计算了发光二极管与卤钨灯光谱功率分布RGB成分比,给出了在CIE1976均匀颜色空间中两种光源再现图像与原图像之间的色差.结果表明, 发光二极管用作彩色全息图照明光源是可行的,可以作为全息灯箱背光源.     

Status of GaN-based green light-emitting diodes

GaN-based blue light emitting diodes(LEDs) have undergone great development in recent years,but the improvement of green LEDs is still in progress.Currently,the external quantum efficiency(EQE) of GaN-based green LEDs is typically30%,which is much lower than that of top-level blue LEDs.The current challenge with regard to GaN-based green LEDs is to grow a high quality In GaN quantum well(QW) with low strain.Many techniques of improving efficiency are discussed,such as inserting Al GaN between the QW and the barrier,employing prestrained layers beneath the QW and growing semipolar QW.The recent progress of GaN-based green LEDs on Si substrate is also reported:high efficiency,high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2,and the relevant techniques are detailed.