Magnetoplastic effect in LiF crystals and longitudinal spin relaxation

New features of the dependence of the average travel distance l of dislocations on the magnetic field B have been found in an investigation of the magnetostimulated dislocation mobility in LiF crystals: A transition has been found from ordinary proportionality l∝B ² to saturation l≈ const in high fields B. It is shown that the experimental points can be described satisfactorily by the theoretical dependence l∝ [(B ₀/B)²+1]⁻¹ (B ₀≈0.8 T), typical for the mechanism of longitudinal spin relaxation in a system of radical pairs, which are supposedly formed when dislocation nuclei interact with paramagnetic impurity centers. According to the theory, the level of the field B ₀ is determined by the characteristic frequency of the oscillations of the internal fields in the lattice, which for B ₀∼1 T is of the order of 10¹¹s⁻¹, which corresponds to the typical frequency of characteristic oscillations of dislocation segments between pinning centers, which, naturally, does not depend on temperature. This in turn explains the fact that the measured values of B ₀ are the same at 293 K and 77 K. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 749–753 (10 December 1999)     

Ultrasound and vortex oscillations in high-temperature superconductors

An HTSC powder sample with grain (particle) diameter of 20–50 μm placed in a dc magnetic field B ₀ and cooled to a temperature below the superconducting transition temperature was exposed to the radiofrequency (rf) pulsed magnetic field B _∼ (B _∼ ⊥ B ₀) at a carrier frequency of 30.7 MHz. Stable echo signals were recorded which followed different rf-pulse trains. This phenomenon has the following mechanism. The rf magnetic field stimulates fluxoid oscillations on the HTSC grain surface, which are transformed into lattice oscillations through the pinning centers and induce a propagating sound wave. The second-order nonlinearity with respect to the gradient of the crystal lattice deviation from the equilibrium position taken into account in the sound wave equation yields the dependence of the crystal lattice natural frequency on the amplitude and length of the pulses which excite these oscillations. This dependence is responsible for the emergence of echo signals.     

Wave shape of de Haas-van Alphen oscillations and effective mass in the two-dimensional organic conductor α-(BEDT-TTF)2KHg(SCN)4

De Haas-van Alphen (dHvA) oscillations in the two dimensional organic conductor α-(BEDT-TTF)₂KHg(SCN)₄ have been measured by a canti-lever technique at high magnetic fields up to 30 T. The wave shape of the dHvA oscillations undergoes a drastic change around the transition field B_K (24 T). The effective mass shifts 1.5 m₀ in the density wave phase (B<B_K) to 1.65 m₀ in the normal metallic phase (B>B_K). Based on the simulation, we have determined that the primary cause of the characteristic field dependence of the wave shape is the change in the effective mass.     

On the limitations of the equation of state based on the Lennard-Jones potential

It is emphasized that any equation of state (EOS) based on the generalized Lennard-Jones potential or the Mie potential, suffers from two main shortcomings as pointed out by Stacey and Davis [2]. One of the shortcomings viz. the problem related to imaginary numbers for the exponents in the potential function, has been removed recently by Jiuxun [11] by using a relationship between the exponents. However, the modified EOS obtained by Jiuxun suffers from the second shortcoming viz. it gives lower values for −B ₀ B″₀, an important equation of state parameter related to the second pressure derivative of the bulk modulus. Values of B ₀ B″₀ obtained by Jiuxun are not consistent with those reported by Stacey and Davis.      

Simple technique for texture function analysis in granular thin film media

In this work a simple technique to extract the texture function in granular thin film media is implemented. The technique is based on previous work in which the distribution function of particles easy axes f(α) is calculated from the measured parallel remanence curve (M_rp(β)). In this simple technique we consider that the measured M_rp(β) curve can be fitted to a series of cos(2β), i.e. M_rp(β)=B₀+B₂ cos(2β)+B₄ cos(4β) where the angle β is the angle by which the film is rotated. This approximation is found to be valid when the texture function has a standard deviation >20°. On this basis, the constants B₀, B₂ and B₄ can be determined by using only three data points for the parallel remanence, M_rp(0), M_rp(45°) and M_rp(90°). The new technique is applied to a textured thin film consisting of cobalt ferrite particles 17 nm in diameter and to a commercial Sony video tape. Using this simple technique, the obtained texture functions are found to be similar to those obtained from the full M_rp(β) curves. This new technique will furnish a simple method with which the texture function in 2D systems can be obtained.     

Magnetoresistance of HgSeS crystals at hydrostatic pressures of up to 1 GPa

Magnetoresistance (MR) of HgSe_1−x S_x crystals has been studied in the temperature range 4.2–300 K and in magnetic fields up to 12 T under hydrostatic pressures P exceeding the threshold P _t for the structural phase transition. Shubnikov-de Haas quantum oscillations in longitudinal and transverse MR were observed to occur in the original samples at T=4.2 K. For P>P _t, HgSeS crystals transferred to metastable states, which presumably incorporate the high-and low-pressure phases, and in which the oscillations vanished. At the same time the monotonic behavior of MR with magnetic field B, as well as the temperature dependences of resistivity ρ retained the shape characteristic of the original phases. The observed weakening of the dependences of ρ on B and T is attributed to an increase of the temperature independent contribution to ρ caused by phase inclusions and structural defects in the metastable states. It is the corresponding decrease of electron mobility that suppresses the oscillations. Fiz. Tverd. Tela (St. Petersburg) 39, 1717–1722 (October 1997)     

Effects of Hall current on unsteady MHD flows of a second grade fluid

The aim of this present paper is to construct exact solutions corresponding to the motion of magnetohydrodynamic (MHD) fluid in the presence of Hall current, due to cosine and sine oscillations of a rigid plate as well as those induced by an oscillating pressure gradient. A uniform magnetic field is applied transversely to the flow. By using Fourier sine transform steady state and transient solutions are presented. These solutions satisfy the governing equations and all associated initial and boundary conditions. The results for a hydrodynamic second grade fluid can be obtained as a limiting case when B ₀ → 0 and for a Newtonian fluid when α ₁ → 0.     

On the effect of a magnetic field on the yield point and kinetics of macroplasticity in LiF crystals

A strong effect of a static magnetic field B on active deformation kinetics ( =const) in LiF crystals is observed. This is a threshold effect with respect to B and ; it is observed only for B> B _c (B≃0.4 T) and . Magnetic sensitivity is exhibited by the yield stress τ _y , which decreases by approximately a factor of 1.5 for B=0.48 T, and by the stage-II and stage-III hardening coefficients θ_II and θ _III, the former decreasing and the latter increasing in a magnetic field. A physical interpretation is proposed for the observed behavior. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 6, 470–474 (25 March 1997)     

Magnetic-Field-Controlled Quantum Critical Points in the Triangular Antiferromagnetic Cs2CuCl4-xBrx Mixed System

The triangular antiferromagnetic Cs₂CuCl_4-xBr_x mixed system is studied by neutron single-crystal diffraction in magnetic field. It shows a rich magnetic phase diagram consisting of four regimes depending on the Br concentration and is characterized by different exchange coupling mechanisms. For the investigated compositions from regime I (0 < x ≤ 1.5), a critical magnetic field B_c is found for a Br concentration x = 0.8 at B_c = 8.10(1) T and for x = 1.1 at B_c = 7.73(1) T and from regime IV (3.2 < x < 4) for x = 3.3 at B_c = 0.99(3) T. For magnetic fields larger than the respective B_c, magnetic superlattice reflections of these compounds are not found. The incommensurate magnetic wave vector q = (0, 0.470, 0) appears below the ordering temperature T_N = 0.51(1) K for Cs₂CuCl_3.2Br_0.8, and q = (0, 0.418, 0) below T_N = 1.00(6) K for Cs₂CuCl_0.3Br_3.7. Neutron diffraction experiments at around 60 mK for x = 3.7 in a magnetic field show the critical magnetic field at B_c = 7.94(16) T and the formation of the second magnetic phase at around 8.5 T depending on the temperature. Inelastic neutron scattering experiments for the compound from regime III (2 < x ≤ 3.2) with x = 2.2 show dynamical correlations at a temperature around 50 mK giving evidence for a spin liquid phase.     

de Haas-van Alphen effect in the superconducting state of YNi2B2C

To examine the Fermi surfaces of the recently discovered quaternery compounds RENi₂B₂C measurements of the de Haas-van Alphen (dHvA) effect were made on YNi₂B₂C single crystals in magnetic fields up to 12 T. ForBc we observe two dHvA frequenciesF ₁=0.499 kT andF ₂=6.933 kT which corresponds to approximately 1,5% and 21% of the Brillouin zone cross section area. Both frequencies could be observed deep in the vortex state of the type-II superconductor, the lower dHvA frequency down to 2 T corresponding to roughly 1/5 of the upper critical fieldB _c2 which was found to be 10.6 T in resistivity measurements. The field dependent quasiparticle damping in the superconducting state is very weak, since the amplitude of the dHvA oscillations seems to be unaffected by the phase transition atB _c2.     

Electronic structures of deformed B2C nanotubes under tensile strain

The vibrational properties and the band gaps of new B₂C nanotubes have been studied by the first principles calculations. It is found that (1) there is a typical Raman-active radial-breathing vibrational mode (RBM), which is similar to that of carbon nanotubes. The RBM frequency decreases in a linear proportion to the inverse diameter, whose variation slope depends on the types of B₂C nanotubes. (2) Under an applied tensile strain, the band gap of B₂C tubes is found to change greatly. For example, their band gaps can decrease to zero with increasing tensile strain for the (n, 0) B₂C tubes with odd n, showing clearly a metal–insulator transition, which cannot happen for the (n, 0) B₂C tubes with even n and the (0, n) B₂C tubes.     

Improved search for $B_{s}^{0} - \overline{B}_{s}^{0}$ oscillations

An improved search for B _s ⁰ oscillations is performed in the ALEPH data sample collected during the first phase of LEP, and reprocessed in 1998. Three analyses based on complementary event selections are presented. First, decays of B _s ⁰ mesons into hadronic flavour eigenstates are fully reconstructed. This selection yields a small sample of candidates with excellent decay length and momentum resolution and hi gh average B _s ⁰ purity. Semileptonic decays with a reconstructed D _s ^- meson provide a second sample with larger statistics, high average B _s ⁰ purity, but a poorer momentum and decay length resolution due to the partial decay reconstruction. Finally, semileptonic b-hadron decays are inclusively selected and yield the data sample with the highest sensitivity to B _s ⁰ oscillations, as the much higher statistics compensate for the low average B _s ⁰ purity and poorer time resolution. A lower limit is set atps^-1 at 95% C.L., significantly lower than the expected limit of 15.2 ps^-1. Received: 21 February 2003 / Published online: 11 June 2003     

An extensive rotational analysis of A → X and B → X systems in the emission spectrum of As2 molecule

Rotational analysis of bands arising from A (v = 0 through 9) and B (v = 0 through 7) states in and systems of As₂ molecule has been carried out. Important perturbations are observed, and the B_v-values are not constant with J, except for the three levels A (v = 0), A (v = 1) and B (v = 1), for which they are, respectively, 0.07202 ± 0.00001, 0.073199 ± 0.000007, and 0.077770 ± 0.000003 cm⁻¹. B_v-curves of the other levels are plotted against J.     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Linear stability analysis of electrohydrodynamic instabilities at fluid interfaces in the “small feature” limit

The endeavour to effectively harness interfacial electrohydrodynamic instabilities, to create small patterns, involves reducing the wavelength of the instability. This can be accomplished by decreasing the separation between the electrodes which may not always be possible. One may therefore have to reduce the surface tension or increase the applied voltage at a fixed electrode spacing. This can result in the wavelength of the pattern becoming of the same order as the electrode separation. Pease and Russel (J. Chem. Phys. 118, 3790 (2003)) were the first to argue that the commonly used Thin-Film Approximation (TFA) that involves an asymptotic expansion in the small parameter δ = (ε ₀ φ ₀²/(γh ₀))^1/2 (where ε ₀ is the permittivity of vacuum, φ ₀ is the root mean square value of the applied potential, γ is the surface tension and h ₀ is the thickness of the thin film) need not always be valid and γ may not be small in experiments. Higher-order corrections to the TFA might therefore be necessary. We extend the Direct Current (DC) field analysis of Pease and Russel to an Alternating Current (AC) field. AC field has been suggested as an effective way of controlling the wavelength of electrohydrodynamic instabilities at fluid-fluid interfaces. Infact, the perfect and leaky dielectric limits can be realised in the same fluid at very high and very low electric field frequencies, respectively. Recently, Roberts and Kumar (J. Fluid Mech. 631, 255 (2009)) carried out an analysis using TFA to investigate AC-field-induced instabilities at air-polymer interfaces. We propose a Generalized Model (GM), without the lubrication approximation, and carry out detailed comparison with the TFA. We consider the top fluid to be air, a perfect dielectric, and the bottom fluid to be a perfect or a leaky dielectric. The analysis is carried out for both DC and AC fields, and the deviation from TFA is expressed in terms of the parameter B = γh ₀/(ε ₀ φ ₀²) = δ ^{− 2}. We discuss variation of the wavelength of the fastest growing mode with frequency of the applied field for any arbitrary value of B, unlike the analysis of Roberts and Kumar which is restricted to B ≫ 1(δ ≪ 1) . We also revisit the analysis of Pease and Russel for instabilities under DC field and present the results in terms of the single parameter, B.     

Hyperfine structure in the BΠ0u state of Br2 and the influence of the perturbing 1u state

Using Doppler-free polarization spectroscopy, the hyperfine structure of the B-X system of ⁷⁹Br₂ was measured for the levels B³Π_0⁺u, v′ = 16–28, and X¹Σ_g⁺, v″ = 1, 2. Besides the nuclear electric quadrupole coupling, the magnetic spin-rotation interaction was analyzed, which varies strongly with the vibrational energy of the electronically excited state. This behavior originates from a perturbing repulsive state Ω = 1_u, the potential of which can be estimated in this way.     

Final-state polarization in <Emphasis Type="Italic">B</Emphasis><Stack><Subscript><Emphasis Type="Italic">s</Emphasis></Subscript><Superscript>0</Superscript></Stack> decays

Certain B _s ⁰→V ₁ V ₂ decays (V _i is a vector meson) can be related by flavor SU(3) symmetry to corresponding B _d ⁰→V ₃ V ₄ decays. In this paper, we show that the final-state polarization can be predicted in the B _s ⁰ decay, assuming polarization measurements of the B _d ⁰ decay. This can be done within the scenario of penguin annihilation (PA), which has been suggested as an explanation of the unexpectedly large transverse polarization in B→φ K ^*. PA is used to estimate the breaking of flavor SU(3) symmetry in pairs of decays. Two of these for which PA makes a reasonably precise prediction of the size of SU(3) breaking are (B _s ⁰→φ φ,B _d ⁰→φ K ^0*) and ( ). The polarization measurement in the B _d ⁰ decay can be used to predict the transverse polarization in the B _s ⁰ decay and will allow for testing of PA as well as the other assumptions in the analysis.     

Dipolar magnetic field and fermi contact field at the μ+ site in α-Fe at very low temperatures

In a longitudinal ⁺SR experiment on a high-purity-Fe single crystal sphere magnetically saturated in a 111 direction damped oscillations (wiggles) were observed in a temperature range 30 mK to 600 mK and in a certain regime of applied magnetic fieldsB _appl. Meassurements of the wiggle frequency as a function ofB _appl give us directly the Fermi fieldB _Fermi=(–1.13±0.02)T and the dipolar magnetic field ¦B _dip ¦=(0.66±0.03)T.B _dip was used to determine the prefactor in the Arrhenius law obeyed by the ⁺ hopping rate between 100 K and 1000 K. A comparision with the corresponding values for protons and deuterons suggests diffusion via the adiabatic mechanism.     

The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation

Magnetotransport at fields up to 500 mT and LF-noise characteristics are reported for miniature magnetoresistors with ferrite concentrators based on Sn-doped n-InSb/i-GaAs heterostructures grown by MBE. The thickness of the InSb epilayers lie in the range 0.55–1.5 μm giving room temperature mobilities of 2.5–5.5 m² V⁻¹ s⁻¹ with carrier densities of (0.5–1.5)×10¹⁷ cm⁻³. The room temperature magnetoresistance (MR) for our two terminal devices could be as high as 115% at 50 mT which is comparable to the extraordinary MR (ExMR) recently reported in microscopic composite van der Pauw disks four terminal devices [Science 289 (2000) 1530]. In addition, a high signal-to-noise ratio and a good temperature stability of R(B)/R₀=0.5–0.83% K⁻¹ was observed for B<60 mT (below the saturation field B_sat for ferrite). Device resistance stability R₀(T) was equal to 0.27–0.66% K⁻¹ in zero field with a nominal device resistance R₀=197–224 Ω for DC currents in the range I=0.01–1.0 mA. The minimum detectable magnetic field is estimated from the reduced differential MR (∂R/∂B)/R=2000% T⁻¹ at B=31 mT and normalised 1/f current noise power spectral density measured at the same field. The resolution limit B_min=2.6 nT at 10² Hz and B_min=0.82 nT at 10³ Hz. These resolution limits are seven times better than those recently reported for the same material n-InSb/i-GaAs and ferrite fabricated Hall sensors [Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers, for Hall sensors applications over extremely wide ranges of temperature and magnetic field, Proceedings NGS 10, IPAP Conference Series 2, IPAP, Tokyo, 2001, pp. 151–154].