The superconducting transition temperature of Pb1−x Mn x films

Results of the superconducting transition temperatureT _c of amorphous and microcrystalline films of lead doped with manganese as magnetic impurity are reported in this work. The amorphous films show an Abrikosov-Gor'kov behaviour, whereas for the crystalline films there is a much smaller depression and a peak for higher Mn concentrations, which indicates a region of coexistence of superconductivity and magnetic ordering as a spinglass.Supported by the Deutsche Forschungsgemeinschaft in the Sonderforschungsbereich 125, Fehlordnung in Metallen — Aachen, Jülich, Köln     

Morphology and magnetic properties of Fe x Co1−x /Co y Fe3−y O4 nanocomposites prepared by surfactants-assisted-hydrothermal process

Recently, we have demonstrated the successful synthesis of Fe _x Co_1−x /Co _y Fe_3−y O₄ nanocomposites with various alkaline solutions by using surfactants-assisted-hydrothermal (SAH) process. In this article, the synthesis of Fe _x Co_1−x /Co_yFe_3−y O₄ nanocomposites with their sizes varying between 20 nm and 2 μm was reported. X-ray powder diffraction (XRD) analyses showed that the surfactants, pH, precipitator, and temperature of the system play important roles in the nucleation and growth processes. The magnetic properties tested by vibrating sample magnetometer (VSM) at room temperature exhibit ferromagnetic behavior of the nanocomposites. These Fe _x Co_1−x /Co _y Fe_3−y O₄ nanocomposites may have a potential application as magnetic carriers for drug targeting because of their excellent soft-magnetic properties.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Features of the plasma sputtering of polycrystalline Pb1 − x Sn x S films

The processes of the sputtering and modification of surfaces of polycrystalline films of the ternary solid solution Pb_{1 ? x} Sn _x S (x = 0.9–1.0) in a high-density Ar plasma of high-frequency low-pressure inductive discharge are studied. Films with thicknesses of 1–4 μm are grown on glass substrates using the “hot-wall” method and consist of plate-like crystallites. It is established that the sputtering rate for lead-tin sulfide films does not exceed 2.0 nm/s, which is determined by the presence of oxygen-containing compounds on the surfaces. In the case of plate-like crystallites with nanodimensional thicknesses, the effect of smoothing of the developed surfaces of the polycrystalline Pb_{1 ? x} Sn _x S layers during plasma treatment is observed; this is important for fabricating multilayer device structures.     

Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

In-plane and out-of-plane anisotropic magnetoresistances in La1 − x Pb x MnO3 thin films

The temperature and field dependences of in-plane (IP) and out-of-plane (OP) anisotropic magnetoresistances (AMRs) have been measured in La_{1 ? x} Pb _x MnO₃ (LPMO) thin films having different microstructures, namely the single-crystal (SC), nanocrystalline (NC) and polycrystalline (PC) microstructures. The OP AMR, irrespective of the microstructure, is found to be considerably larger than the IP AMR. The magnetization data show that the larger OP AMR arises because magnetization is favoured in the film plane owing to strain anisotropy. In addition, the temperature and field dependences of both IP and OP AMRs are governed by the crystallinity of the films, indicating that the AMRs are strongly influenced by the magnetization process.     

Synthesis and characterization of nanostructured (Pb1− x Sr x )TiO3 thin films by a modified chemical route

The coating solutions of nanostructured (Pb_{1– x} Sr _x )TiO₃ (PST) thin films have been prepared by the sol–gel combined metallo-organic decomposition method. The coating solutions were deposited on Pt/Ti/SiO₂/Si substrates using a spin-coating technique with spinning speed of 4300 rpm and annealed at 650°C. The effect of Sr content in reducing the grain size and tetragonal distortion of PST films has been studied. The optimum conditions for crystalline phase formation in the films have been analyzed by thermogravimetric, differential thermal analysis and Fourier transform infrared spectroscopy. The phase and microstructure of the films were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD pattern shows that the PST thin films are crystallized into tetragonal structures without any impurity phase and the distortion ratio reduces with increasing Sr concentration. The AFM results indicate an increase in grain size with increasing annealing temperature of the film and reduction in grain size with increasing Sr concentration.     

Properties of Hg1−xZnxSe (0.09 ⩽ x ⩽ 1.0) thin films prepared by flash evaporation technique

Flash evaporated mercury zinc selenide films are observed to grow as single phase ternary alloys of the type Hg_1−xZn_xSe in the composition range 0.09 ⩽ x ⩽ 1.0, with a f.c.c./sphalerite structure on substrates maintained at T_s between 30°C and 175°C. The grain size is observed to increase with increase in T_s for all compositions. The films are observed to have a direct optical band gap which increases from 0.01 to 2.60 eV as the Zn concentration x is varied between 0.09 and 1.0. The band gap V_scomposition shows a bowing, typical of pseudobinary solid solutions. Zn rich films were observed to be p-type whereas Hg-rich films were n-type. Room temperature resistivity was observed to increase with Zn concentration x, which can be attributed to the increase in the band gap of the semiconductors. Higher resistivity in films deposited at high substrate temperatures is due to the decrease in contribution to conduction from the highly conducting grain boundaries.     

Mössbauer studies on Tb x Fe1−x alloy films with perpendicular magnetic anisotropy

Amorphous ferrimagnetic Tb _x Fe_1?x films with perpendicular magnetic anisotropy and Tb _x Fe_1?x /NiFe exchange-coupled structures characterized by unidirectional anisotropy are obtained. The magnetic and chemical inhomogeneity of alloys of Tb _x Fe_1?x compensation composition is established on the basis of Mössbauer studies of these systems.     

Dielectric study on Zn1−x Mg x O ceramic materials prepared by the solid-state route

The present work investigates the structural and dielectric properties of Zn_1?x Mg _x O composites prepared by the standard sintering method at 1200 °C during 24 h and doped with different weight percentages of MgO (x = 0–40 %). For this purpose, the scanning electron microscopy (SEM) was used to study the effect of the magnesium’s proportion on the morphology and crystallinity of the obtained samples. The SEM observations have shown rougher surfaces of the samples covered by grains having prismatic shapes and different sizes. The dielectric properties of the ceramics were investigated by spectroscopic impedance at different temperatures and frequencies, thus showing a frequency-dependent dispersion of the permittivity constants and dielectric losses. From these measurements, the relaxation processes were identified and their activation energies extracted. Dielectric responses were correlated with the microstructure and chemical composition of the ZnMgO composites. The mechanisms of ac conductivity are controlled by the polaron hopping and the electron tunneling models. Concerning the tunneling model, two types corresponding to the overlapping large polaron tunneling model for the composites Zn_0.9Mg_0.1O and Zn_0.8Mg_0.2O and the small polaron tunneling model for the composites Zn_0.64Mg_0.36O (in the frequency range 1.7 × 10⁴ Hz–1 MHz) and Zn_0.6Mg_0.4O were observed. Besides, one type of hopping model corresponding to the correlated barrier hopping for the composites ZnO and Zn_0.64Mg_0.36O (in the frequency range 6 × 10²–1.7 × 10⁴ Hz) was noted.     

Hyperfine fields and magnetic anisotropy in Fe1000−x Gd x thin films and Fe80−x GdxB20(0≤x≤24) thin films and ribbons

The Mössbauer measurements performed on Fe_100–x Gd _x thin films and on Fe_80–x Gd _x B₂₀ both as thin films and ribbons show a dependence of the spins orientation and H_hyp versus temperature, Gd content and preparation conditions. Increasing the Gd content, the initial low anisotropy disappears and H_hyp decreases. A sharp increase of the anisotopy with temperature in ribbons with low Gd concentration is evidenced.     

Properties of Cu2ZnSn(SxSe1−x)4 thin films prepared by one-step sulfo-selenization of alloyed metal precursors

The pentenary system, Cu₂ZnSn(S_xSe_1−x)₄ (CZTSSe), is a promising alternative for thin film solar cells. In this study, CZTSSe thin films were prepared using a two-stage process involving the thermal diffusion of sulfur (S) and selenium (Se) vapors into sputtered metallic precursors at approximately 450 °C. The effects of the sulfur content on the composition, structure, optical and electrical characteristics of the CZTSSe thin films were investigated. The films showed a kesterite structure with a predominant (112) orientation. X-ray diffraction and Raman spectroscopy confirmed the formation of a single phase CZTSSe compound. The band gap was dependent on the sulfur content and was calculated to be 1.25 eV, 1.33 eV and 1.40 eV for CZTSSe films with a S/(S + Se) ratio of 0.3, 0.5 and 0.7, respectively. All films exhibited p-type semiconductor properties.     

Tunable growth of (GaxIn1−x)2O3 nanowires by water vapor

The tunable growth of In-doped Ga₂O₃ (Ga₂O₃:In) and Ga-doped In₂O₃ (In₂O₃:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700–750 °C via carbothermal reduction of Ga₂O₃/In₂O₃ powders with a fixed weight ratio. In Ar, only the Ga₂O₃:In NWs were grown, while in wet Ar the In₂O₃:Ga NWs were synthesized instead. The Ga concentration in In₂O₃ NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga₂O₃:In and In₂O₃:Ga NWs followed the vapor–liquid–solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga₂O₃ NWs and In₂O₃ NWs, respectively. The growth mechanisms and optical properties of Ga₂O₃:In and In₂O₃:Ga NWs were discussed.     

Defects and localized states in MBE-grown GaAs1−x N x solid solutions prepared by molecular-beam epitaxy

Defects and localized states have been studied for molecular-beam-epitaxy (MBE)-grown high-resistivity and undoped GaAs_1?x N _x films with a N concentration not exceeding approximately 1.0 at.%. The crystalline quality of the films and hence the defects and localized states were determined by high-resolution X-ray diffraction, photoluminescence spectra, capacitance versus voltage measurements and photoinduced current transient spectra of GaAs and GaAs_1?x N _x layers. It was concluded that incorporation of low concentrations of N into MBE-grown GaAs_1?x N _x films promotes the formation of high densities of deep centres similar to EL2 donors, leading to heavy compensation of the films by some unidentified acceptors. GaAs antisite acceptors were believed to be responsible for the said compensation. A prominent defect band near 1.33-1.38 eV also appeared to be associated with these defects. The most prominent centres in dilute GaAs_1?x N _x films with N content less than 0.35 at.% seem to be the EL2 donors and the hole traps located near E _v +0.3 eV.     

Facet formation in strained Si1−x Gex films

The surface morphology of epitaxial (001) Si_1−x Ge_x films, subject to biaxial strain, is studied by atomic force microscopy (AFM). Distinct facets are observed, oriented on {105}, {311}, and {518} crystal faces. The tiled arrangement of facets resembles a mosaic. We find that the growth sequence begins with the shallow {105} facets, followed by the appearance of steeper facets. After strain relaxation, the morphology coarsens and facets become less distinct. The existence of discrete facets produces a kinetic barrier to strain-induced roughening; and we show that increasing this barrier (by growing at reduced strain or reduced temperature) leads to a flatter surface morphology.     

Calculation of the electronic structure and hyperfine fields for Fe1 − x Co x B and (Fe1 − x Co x )2B compounds by the Korringa-Kohn-Rostoker method

The magnetic properties of Fe_{1 ? x} Co _x B and (Fe_{1 ? x} Co _x )₂B disordered compounds were investigated using first-principles calculations of the electronic structure in the framework of the density functional theory with the Korringa-Kohn-Rostoker method. The concentration dependences of the magnetic moments and the electron density were calculated for the Fe_{1 ? x} Co _x B solid solutions. The results obtained were used to analyze in detail and to interpret the transition from a magnetic phase to a nonmagnetic phase, which was previously revealed from the experiments in the compounds under investigation. The performed analysis of the calculated hyperfine fields induced by the electronic shells at the iron and cobalt atoms in the (Fe_{1 ? x} Co _x )₂B borides made it possible to explain the experimentally observed magnetic anisotropy.     

A study of Ba x Mg1 − x F2 optical films

Ba _x Me_{1 ? x} F₂ binary fluoride films (“Me” denotes calcium or magnesium fluoride) are studied. A method of processing the reflection and transmission spectra is proposed to determine the optical constants. The dispersion dependences of the refractive indices and absorption coefficients of films in the range of 1.3–12 μm are found. Dispersion in films in the regions of additional absorption bands, which are absent in single crystals, is observed for the first time. It is shown that the films of binary fluorides have a higher packing density, a lower absorption, and better operating characteristics than do films of pure fluorides. The films are promising for application as optical interference coatings in the mid-IR spectral region.