A Copper Laser with Flowing Ne-HBr Buffer Gas

ＡＣｏｐｐｅｒＬａｓｅｒｗｉｔｈＦｌｏｗｉｎｇＮｅ－ＨＢｒＢｕｆｆｅｒＧａｓ￥ＪＩＹｉｎｇ；ＬＩＡＮＧＰｅｉｈｕｉ；ＳＨＥＮＱｉｍｉｎ；ＺＨＡＮＧＧｕｉｙａｎ；ＬＩＮＦｕｃｈｅｎｇ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓａｎｄＦｉｎｅＭｅ...     

Concentration dependent fluorescent characteristics of Ti~（3＋） ion doped sapphire crystal

ＣｏｎｃｅｎｔｒａｔｉｏｎｄｅｐｅｎｄｅｎｔｆｌｕｏｒｅｓｃｅｎｔｃｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＴｉ￣（３＋）ｉｏｎｄｏｐｅｄｓａｐｐｈｉｒｅｃｒｙｓｔａｌＬＩＵＪｉａｎｈｕａ；ＤＥＮＧＰｅｉｚｈｅｎ；ＧＡＮＦｕｘｉ（ＳｈａｎｇｈａｉＩｎｓｔｉｔ...     

Intracavity Frequency Doubling of a New Low－threshold High－efficiency Crystal Nd：Sr_5（VO_4）_3F

ＩｎｔｒａｃａｖｉｔｙＦｒｅｑｕｅｎｃｙＤｏｕｂｌｉｎｇｏｆａＮｅｗＬｏｗ－ｔｈｒｅｓｈｏｌｄＨｉｇｈ－ｅｆｆｉｃｉｅｎｃｙＣｒｙｓｔａｌＮｄ：Ｓｒ＿５（ＶＯ＿４）＿３ＦＺＨＡＯＳｈｅｎｇｚｈｉ；ＷＡＮＧＱｉｎｇｐｕ；ＺＨＡＮＧＸｉｎｇｙｕ；ＷＡＮＧ...     

A Study on Yttrium Containing Fullerene YC＿（82） Using Laser Ablation Mass Spectroscopy

ＡＳｔｕｄｙｏｎＹｔｔｒｉｕｍＣｏｎｔａｉｎｉｎｇＦｕｌｌｅｒｅｎｅＹＣ＿（８２）ＵｓｉｎｇＬａｓｅｒＡｂｌａｔｉｏｎＭａｓｓＳｐｅｃｔｒｏｓｃｏｐｙ￥ＤＯＮＧＧｕｏｘｕａｎ；ＷＡＮＧＳｈｉｌｉａｎｇ；ＤＡＩＳｏｎｇｔａｏ；ＬＩＣｈｕｎｍｉｎｇ；ＣＨ...     

Spectral Study of Fullerene Doped Optical Glasses

ＳｐｅｃｔｒａｌＳｔｕｄｙｏｆＦｕｌｌｅｒｅｎｅＤｏｐｅｄＯｐｔｉｃａｌＧｌａｓｓｅｓ￥ＭＥＮＧＺｈｉｃｏｎｇ；ＬＩＮＦｕｃｈｅｎｇ；ＭＡＯＳｅｎ；ＺＥＮＧＨｅｐｉｎｇ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓａｎｄＦｉｎｅＭｅｃｈａｎｉｃ...     

Stimulated Brillouin scattering（SBS） excited with a phase－modulated pump laser

Ｓｔｉｍｕｌａｔｅｄ Ｂｒｉｌｌｏｕｉｎ ｓｃａｔｔｅｒｉｎｇ（ＳＢＳ） ｅｘｃｉｔｅｄ ｗｉｔｈ ａ ｐｈａｓｅ－ｍｏｄｕｌａｔｅｄ ｐｕｍｐ ｌａｓｅｒ￥ＷＥＮＧｕｏｊｕｎ；ＱＩＡＮＬｉｅｊｉａ；ＬＵＪｕｎｘｉａｏ；ＦＡＮＤｉａｎｙｕａｎ；ＤＥＮ...     

High Reflection Ge_(0.45)Te_(0.55) Recording Films

ＨｉｇｈＲｅｆｌｅｃｔｉｏｎＧｅ０．４５Ｔｅ０．５５ＲｅｃｏｒｄｉｎｇＦｉｌｍｓＬＩＵＨｕｉｙｏｎｇＪＩＡＮＧＦｕｓｏｎｇＭＥＮＬｉｑｉｕＦＡＮＺｈｅｎｇｘｉｕＧＡＮＦｕｘｉ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓ＆ＦｉｎｅＭｅｃｈａｎｉ...     

Upconversion Fluorescence of Er_2O_3 Doped BaF_2-TeO_2 and PbF_1-TeO_2 Oxyhalide Tellurite Glasses

ＵｐｃｏｎｖｅｒｓｉｏｎＦｌｕｏｒｅｓｃｅｎｃｅｏｆＥｒ_２Ｏ_３ＤｏｐｅｄＢａＦ_２－ＴｅＯ_２ａｎｄＰｂＦ_１－ＴｅＯ_２ＯｘｙｈａｌｉｄｅＴｅｌｌｕｒｉｔｅＧｌａｓｓｅｓ￥ＨＵＬｉｎ；ＪＩＡＮＧＺｈｏｎｇｈｏｎｇ；ＨＵＷｅｎｔａｏ；ＳＯＮＧＸｉｕｙｕ...     

Application of a Double－Wollaston－prism Laser Differential Interferometer in Plasma Focus

ＡｐｐｌｉｃａｔｉｏｎｏｆａＤｏｕｂｌｅ－Ｗｏｌｌａｓｔｏｎ－ｐｒｉｓｍＬａｓｅｒＤｉｆｆｅｒｅｎｔｉａｌＩｎｔｅｒｆｅｒｏｍｅｔｅｒｉｎＰｌａｓｍａＦｏｃｕｓＬＵＭｉｎｇｆａｎｇ；ＹＡＮＧＴｓｉｎｃｈｉ；ＨＡＮＭｉｎ（ＴｓｉｎｇｈｕａＵｎｉｖｅｒｓ...     

Temporal Aberration of the Focused Inhomogeneous Wave from a Misalignment Parallel Grating Pair Compressor

ＴｅｍｐｏｒａｌＡｂｅｒａｔｉｏｎｏｆｔｈｅＦｏｃｕｓｅｄＩｎｈｏｍｏｇｅｎｅｏｕｓＷａｖｅｆｒｏｍａＭｉｓａｌｉｇｎｍｅｎｔＰａｒａｌｅｌＧｒａｔｉｎｇＰａｉｒＣｏｍｐｒｅｓｏｒＸＵＳｈｉｘｉａｎｇＺＨＡＮＧＨｕａＦＡＮＤｉａｎｙｕａｎ（Ｓｈａｎｇ...     

Optical and Short- wavelength Recording Properties of Ag_8In_( 14) Sb_( 55) Te_(23) Phase-change Films

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｏｐｔｉｃａｌｄａｔａｓｔｏｒａｇｅｂｙｍａｒｋｉｎｇｏｆｍｉｃｒｏｎ ｓｉｚｅｄｓｐｏｔｓｏｎａｄｉｓｋｗｉｔｈａｌａｓｅｒｉｓａｎａｒｅａｗｉｔｈｏｎｇｏｉｎｇｒｅｓｅａｒｃｈａｃｔｉｖｉｔｙ .Ｏｐｔｉｃａｌｄｉｓｋｄａｔａｓｔｏｒａｇｅｈａｓｔｈｅｃｏｍｂｉｎｅｄａｄｖａｎｔａｇｅｓｏｆｈｉｇｈｓｔｏｒａｇｅｄｅｎｓｉｔｙ ,ｄｉｓｋｒｅｍｏｖａｂｌｅ,ａｎｄｌａｒｇｅｈｅａｄ ｄｉｓｋｗｏｒｋｉｎｇｄｉｓｔａｎｃｅ.Ｉｎｒｅｃｅｎｔｙｅａｒｓ ,ｗｒｉｔｅ ｏｎｃｅ…     

GeSb_2Te_4相变光存储薄膜材料的短波长静态记录特性的研究

研究了单层ＧｅＳｂ２Ｔｅ４真空射频溅射薄膜在４００ｎｍ～８３０ｎｍ区域的吸收、反射光谱和光学常数（ｎ，ｋ），发现ＧｅＳｂ２Ｔｅ４薄膜在４００ｎｍ～６００ｎｍ波长范围内具有较强的吸收。在短波长静态测试仪上测试了ＧｅＳｂ２Ｔｅ４薄膜的光存储记录特性，发现在５１４．５ｎｍ波长用较低功率的激光辐照样品时薄膜在写入前后的反射率变化较大，擦除前后的反射率对比度较低，可通过膜层设计来提高     

Optical and Short-wavelength Recording Properties of Ag8In14Sb55Te23 Phase-change Films

The Ag-In-Sb-Te phase-change films were deposited on K9 glass substrates by RF magnetron sputtering technology with an Ag-In-Sb-Te alloy target. The spectral properties and short-wavelength optical storage properties of Ag8In13Sb55Te23 films were studied. X-ray diffraction results have indicated that the crystallization compounds include mainly AgSbTe2 with small amounts of Sb and AgInTe2. A comparatively large absorption has been observed in the visible wavelength range. The optical storage characteristics of Ag8In13Sb55Te23 thin films indicated that larger reflectivity contrast can be obtained at lower writing power and shorter writing pulse width.     

Laser induced crystallization of as-deposited amorphous Ge2Sb2Te5 films

Crystallization is induced by pulsed laser irradiation of s-deposited amorphous Ge2Sb2Te5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing,the reflectivity contrast increases from 0% - 2% to 14% - 16%, which indicates the structure of as deposited films transforms from amorphous to crystalline phases. The process of crystallization driven by the movement and rearrangement of atoms is described. And also the influence of the pulse duration on the threshold of crystallization is discussed, the results show that a lower threshold of crystallization can be produced for as-deposited films irradiated by the laser with short pulse duration. However, by the laser with long pulse duration, crystallization can only be formed with a higher threshold. The crystallization of films by irradiation of laser pulses is studied by Raman spectra.     

Time resolved calorimetry of te films during pulsed laser annealing

Using a pyroelectric thin-film calorimeter the temperature of 30 nm thick Te films during pulsed laser annealing was studied in real-time. A XeCl excimer laser pumped dye laser with Raman shifter was utilized to study the wavelength and energy dependence. No significant wavelength dependence was noticed. Depending on the pulse energy, however, melting, boiling and crystallization of the Te films was observed. These findings support a strictly thermal model for laser annealing and optical recording with Te based media. In addition boiling was identified as the prevalent mechanism for the loss of material.     

Te/TeO2-SiO2复合薄膜的吸收和非线性光学特性研究

应用分光光度计测量Te/TeO₂-SiO₂复合薄膜的透射光谱和吸收光谱, 在480nm附近观察到Te颗粒引起的等离子体共振吸收峰; 采用Z扫描技术研究了共振(激发波长为532 nm)和非共振情况下(激发波长1064 nm) 不同电位制备薄膜的Te颗粒状态与复合薄膜的三阶非线性极化率的关系. 基于有效介质理论对复合薄膜的三阶非线性效应进行分析, 研究Te颗粒大小对Te/TeO₂-SiO₂复合薄膜的非线性光学性质的影响及其产生机理. 结果表明薄膜制备过电位增大, Te的粒径减小, 颗粒数量多, 颗粒分布趋于均匀, 使得金属颗粒的表面等离子体共振峰红移, 吸收强度增强, 导致三阶非线性光学效应增强, χ⁽³⁾由1064 nm的5.12×10^-7 esu增大为532 nm的8.11×10^-7 esu. 关键词： 碲 二氧化碲 复合薄膜 三阶非线性     

Ge2Sb2Te5薄膜光学性能和短波长静态记录特性的研究

利用直流磁控溅射制备了单层Ge₂Sb₂Te₅薄膜,研究了薄膜在400～800 nm区域的反射、透过光谱,计算了它的吸收系数,发现薄膜在400～800 nm波长范围内具有较强的吸收.随着薄膜厚度的增加,相应的禁带宽度Eg也随之增加.对Ge2Sb2Te5薄膜光存储记录特性的研究发现,在514.5 nm波长激光辐照样品时,薄膜具有良好的写入对比度,擦除前后的反射率对比度在6%~18%范围内.对实验结果进行了分析.     

Damage performance of TiO2/SiO2 thin film components induced by a long-pulsed laser

In order to study the long-pulsed laser induced damage performance of optical thin films, damage experiments of TiO₂/SiO₂ films irradiated by a laser with 1 ms pulse duration and 1064 nm wavelength are performed. In the experiments, the damage threshold of the thin films is measured. The damages are observed to occur in isolated spots, which enlighten the inducement of the defects and impurities originated in the films. The threshold goes down when the laser spot size decreases. But there exists a minimum threshold, which cannot be further reduced by decreasing the laser spot size. Optical microscopy reveals a cone-shaped cavity in the film substrate. Changes of the damaged sizes in film components with laser fluence are also investigated. The results show that the damage efficiency increases with the laser fluence before the shielding effects start to act.     

磁控溅射法制备的高反Ag_5In_5Te_(47)Sb_(33)相变薄膜的光谱性质及短波长静态记录性能

研究了磁控溅射制备的Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜的光谱及短波长静态记录性能。研究结果表明，晶态薄膜反射率较高，并在６００～９００ｎｍ波长范围内，晶态与非晶态的反射率和折射率相差很大。在ＣＤ－Ｅ系统的工作波长７８０ｎｍ处，晶态反射率高达５０％，光学常数为５．３４－１．０ｉ；非晶态反射率为２３％，光学常数为２．５－１．０３ｉ。从这一角度讲，Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜适于做ＣＤ－Ｅ系统的记录介质。另外，采用波长为５１４．４ｎｍ的短波长光学静态记录测试仪对Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３薄膜的记录性能进行了测试，结果表明，这种薄膜短波长记录性能较好，它在较低功率和短脉宽的激光束作用下就可得到较高的反射率对比度。