用分光光度法研究非晶硅薄膜的光学性质

提出了一种测量薄膜透射光谱的方法.该方法用自制的夹具改进了分光光度计,保证了在测量大小不同的样品时参考光的强度和入射到待测样品上光的强度相同.利用改进后的分光光度计测量了沉积在玻璃衬底上非晶硅薄膜的透射光谱,并对透射光谱进行了拟合和计算,确定出非晶硅薄膜的光学常量和厚度.     

Rashba自旋-轨道耦合调制的单层半导体纳米结构中电子的自旋极化效应

利用现代材料生长技术纳米厚的半导体可以沿着良好的方向有序生长,形成层状半导体纳米结构.在这种半导体纳米结构中由于结构反演对称性破缺出现较强的自旋-轨道耦合,能有效消除半导体中电子的自旋简并,导致电子自旋极化效应,在自旋电子学领域中具有重要的应用.本文从理论上研究了单层半导体纳米结构中由Rashba型自旋-轨道耦合引起的电子自旋极化效应.由于Rashba型自旋-轨道耦合,相当强的电子自旋极化效应出现在该单层半导体纳米结构中.自旋极化率与电子的能量和平面内波矢有关,尤其是其可通过外加电场或半导体层厚度进行调控.因此,该单层半导体纳米结构可作为半导体自旋电子器件应用中的可控电子自旋过滤器.     

多层膜界面结构探测技术

分别以丙醇锆和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和Si O2溶胶。用旋转镀膜法在K9玻璃上分别制备了Si O2单层膜、ZrO2单层膜和ZrO2/Si O2/ZrO2三层膜。采用椭偏仪测量薄膜的厚度与折射率,用紫外-可见分光光度计测量了薄膜的透过率,利用TFCalc_Demo模系设计软件,采用三层理论模型对薄膜的透过率进行模拟,用扫描电镜(SEM)观察了三层膜的断面结构,用X射线光电子能谱仪(XPS)测量了薄膜的成分随深度方向的变化,进一步验证了ZrO2/Si O2/ZrO2三层膜之间的渗透关系,同时对多层膜的界面结构探测方法起到了借鉴作用。     

DLC/Ag/DLC复合多层薄膜光学性能

采用等离子体增强化学气相沉积类金刚石(DLC)薄膜、高真空磁控溅射镀膜设备溅射Ag靶的方法制备了不同厚度Ag、DLC层的DLC/Ag/DLC多层膜,分别用紫外可见分光光度计、四探针测试仪对样品的光学性能、电学性能进行了测试.结果表明,随着Ag层厚度的增加,DLC/Ag/DLC多层膜透射率先增后减,外层DLC薄膜和内层DLC薄膜对透射率影响基本一致,随着厚度增加透射率先增后减,在内外层厚度为40 nm,Ag夹层厚度为16 nm时,DLC(30 nm)/Ag(16 nm)/DLC(40 nm)膜在550 nm处的透射率高达94.4%,电气指数高达112.4 ×10-3Ω-1,远远超过现有透明导电膜的电气指数(FTC≈20×10-3Ω-1).     

光学薄膜的光谱显示

所谓光学薄膜的光谱显示,就是把研制样品的光谱特性显示在示波器上,在膜层制备过程中显示出样品光谱特性的形成与变化过程。从而可以直观地控制、制备膜层并直接观测样品的光谱特性。本项技术可用于光学薄膜研究,它既可以控制薄膜的厚度,又可同时观测薄膜的光谱特性,也可用于类似研究、控制和观测光谱特性的其它科技领域。一、原理本项研究的基本原理与一般分光光度计的原理是一致的。但是分光光度计不能用于研究和控制样品光谱持性的连续变化,所以分光光度计就不能用来控制样品光谱特性的产生。本项研究的目的在于在样品的生产过程中能有效地直观地控制和观测样品所要求的光谱特性。     

4.48 nm正入射软X射线激光用Cr/C多层膜高反射镜的研制

针对4.48nm类镍钽软X射线激光及其应用实验,设计制备了工作于这一波长的近正入射多层膜高反射镜。选择Cr/C为制备4.48nm高反射多层膜的材料对,通过优化设计,确定了多层膜的周期、周期数以及两种材料的厚度比。模拟了多层膜非理想界面对高反射多层膜性能的影响。采用直流磁控溅射方法在超光滑硅基片上实现了200周期Cr/C多层膜高反射镜的制备。利用X射线衍射仪测量了多层膜结构,在德国BessyⅡ同步辐射上测量了在工作波长处多层膜反射率,测量的峰值反射率达7.5%。对衍射仪测量的掠入射反射曲线和同步辐射测量的反射率曲线分别进行拟合,得到的粗糙度和厚度比的结果相近。测试结果表明,所制备的Cr/C多层膜样品结构良好,在指定工作波长处有较高的反射峰,达到了设计要求。     

基于太赫兹时域光谱技术的多层涂层高效可靠测厚方法

为实现基于太赫兹技术的多层涂层的快速与可靠测厚,提出了一种自适应教与学优化算法,改进了标准Kent混沌映射,提高了初始种群多样性;并基于步长调节优化和次优个体优化,改进了教阶段与学阶段,提高算法寻优精度和效率。将该算法与太赫兹波测量多层涂层厚度的理论模型结合,建立了涂层厚度求解方法。最后,制备了多层涂层样件,开展了太赫兹无损检测实验。实验结果表明:建立的涂层厚度求解方法相比于全局最优算法的效率提高了1倍,单次实验仅需50 s左右便可快速得到多层涂层的厚度、折射率和消光系数,测量所得的多层涂层厚度的相对误差在1.5%以内,且标准差最大不超过1.7μm。基于太赫兹测量信号,所提方法可以高效、准确及可靠地计算多层涂层的厚度。     

多层光学薄膜周期厚度的双晶X射线掠入射研究

阐述了掠入射Ｘ射线测量薄膜厚度的条件，讨论和分析了掠入射Ｘ射线测量多层薄膜厚度的干涉原理和方法。利用双晶Ｘ射线衍射仪对多层光学薄膜的周期厚度进行了掠入射小角度测量，获得了令人满意的结果，测量值与设计值极好地吻合。     

提高极紫外光谱纯度的多层膜设计及制备

极紫外光刻是实现22nm技术节点的候选技术。极紫外光刻使用的是波长为13.5nm的极紫外光,但在160～240nm波段,极紫外光刻中的激光等离子体光源光谱强度、光刻胶敏感度以及多层膜的反射率均比较高,光刻胶在此波段的曝光会降低光刻系统的光刻质量。从理论和实验两方面验证了在传统Mo/Si多层膜上镀制SiC单层膜可对极紫外光刻中的带外波段进行有效抑制。通过使用X射线衍射仪、椭偏仪以及真空紫外(VUV)分光光度计来确定薄膜厚度、薄膜的光学常数以及多层膜的反射率,设计并制备了[Mo/Si]40SiC多层膜。结果表明,在极紫外波段的反射率减少5%的前提下,带外波段的反射率减少到原来的1/5。     

锰基钙钛矿多层膜中的层间相互作用

本文采用直流磁控溅射方法在(100)取向的LaAlO3基片上制备了系列多层膜: La0.67Ca0.33MnO3-δ/La0.67Sr0.33MnO3-δ/La0.67Ca0.33MnO3-δ (LC/LS/LC).并采用标准四探针方法对所制备样品的阻温关系进行了测量. 结果表明:在零场下,当上下两层厚度一定时,随着中间层(LS)厚度增加,多层膜的电阻率减小,金属-绝缘体转变温度(TM-I)向高温方向移动.在中间层(LS)厚度保持一定时,随着上下两层(LC)厚度增加,其电阻率和金属-绝缘体转变温度(TM-I)出现同样的变化规律.基于双交换理论,我们对以上结果给出了尝试性解释.     

基底上覆分层薄膜超声Scholte波特性与薄膜定征

分层薄膜-基底结构广泛应用于微电子器件等诸多领域,但薄膜材料参数超声测量尤其是横波速度的定征是一个困难的问题。本文对液固界面Scholte界面波的频散特性和脉冲激励的声压响应进行了理论分析。结果表明,液固界面Scholte波频散与分层膜-基底结构的速度分布密切相关。薄膜材料各层的厚度和横波速度对界面波频散特性有显著影响。基于Scholte界面波的频散特性,提出了一种多层膜的多参数反演定征方法。首先针对理论信号进行薄膜参数反演,验证了该方法的可行性。后续对不同类型的多层膜材料样品进行了液固界面波激发与采集实验,实验信号的薄膜参数反演结果进一步验证了该方法的可行性和有效性。     

Double-crystal X-ray diffractometry in the role of X-ray standing-wave method

It is shown that the atomic displacements (induced by foreign layers) comparable with or smaller than the interatomic distances can be detected in perfect multilayer systems by double-crystal X-ray diffractometry alone. It was earlier thought that the detection of displacements as small as those was accessible only to the specific methods such as the X-ray standing-wave method. The measurements were carried out on a GaAs/InAs/GaAs system, where InAs was a foreign layer. Its thickness did not exceed three monolayers, while the structure was of the insular type and represented a set of separate quantum dots. The displacement of the capping GaAs layer relative to the GaAs buffer was measured with an accuracy of less than 0.1 of the thickness of the atomic layer.     

Passivation of defect states in Si-based and GaAs structures

Formation of defect states on semiconductor surfaces, at its interfaces with thin films and in semiconductor volumes is usually predetermined by such parameters as semiconductor growth process, surface treatment procedures, passivation, thin film growth kinetics, etc. This paper presents relation between processes leading to formation of defect states and their passivation in Si and GaAs related semiconductors and structures. Special focus is on oxidation kinetics of yttrium stabilized zirconium/SiO₂/Si and Sm/GaAs structures. Plasma anodic oxidation of yttrium stabilized zirconium based structures reduced size of polycrystalline silicon blocks localised at thin film/Si interface. Samarium deposited before oxidation on GaAs surface led to elimination of EL2 and/or ELO defects in MOS structures. Consequently, results of successful passivation of deep traps of interface region by CN⁻ atomic group using HCN solutions on oxynitride/Si and double oxide layer/Si structures are presented and discussed. By our knowledge, we are presenting for the first time the utilization of X-ray reflectivity method for determination of both density of SiO₂ based multilayer structure and corresponding roughnesses (interfaces and surfaces), respectively.     

多层多孔吸声材料结构参数优化设计

高开孔率的发泡材料(如三聚氰胺、聚氨酯发泡材料)具有优良的吸声、隔热防火、防腐及环保性能,可以作为吸声、阻尼等材料应用于建筑、航空、交通工具等领域.该文基于Biot理论和多层介质声波传播理论(传递矩阵法),建立多层多孔吸声结构背衬刚性壁的理论模型,利用遗传算法优化多层结构厚度和质量.将理论模型计算结果与阻抗管测试结果进...     

Theoretical study of optical characteristics of multilayer coatings ZnO/CdS/CdTe using first-principles calculations

A new method for predicting optical characteristics of multilayer coatings based on calculated material properties is presented. This method combines the use of the full potential linear-augmented plane wave method (FP-LAPW) within the framework of the Density Functional Theory (DFT) and the optical matrix approach for modeling the multilayer assembly. The simulation process is applied to thin films of the II–VI semiconductors compounds. The optical constants of each thin film are determined by using the first principle calculations. Each layer is represented by the square Abeles matrix, including all necessary data in the calculation of the optical characteristics (as transmittance, reflectance and absorbance). The simulation of multilayer optical response includes the effect of thickness, light polarization and incident angle. The obtained results are helpful in the design of the multilayer systems with required properties.     

GaAs quantum well structures investigation by local cathodoluminescence

The article shows the cathodoluminescence technique application to a quality analysis of a semiconductor multilayer heterostructures. Two structures with a GaAs quantum well embedded between the AlGaAs and GaInP barriers were investigated. The AlGaAs/GaAs/GaInP and GaInP/GaAs/AlGaAs structures were grown by MOCVD on a GaAs substrate. In this work we study the interface quality of quantum-dimensional GaAs layer by means of the local cathodoluminescence. Degradation and broadening of GaAs/GaInP interface occurring during the growth process of GaAs on GaInP layer was assumed to result in the formation of a layer with mixed composition at the interface. In addition, the presence of the layer prevented the formation of a quantum well in the GaAs layer. The transition layer was clearly observed by the cathodoluminescence. In the other case it was found that the growth of a structure with GaAs layer on top of AlGaAs produced a quantum well with a 10 nm thickness. The interface quality and layer thicknesses were also confirmed by the X-ray diffraction investigation of these structures.     

Monitoring the ultrafast electric field change at a mid-infrared plasma Bragg mirror

The electric field change of a femtosecond mid-infrared (MIR) pulse reflected by a new type of Bragg mirror is directly measured by time-resolved cross-correlation spectroscopy. The refractive-index contrast of the plasma Bragg mirror is achieved by use of different doping levels of only one type of semiconductor material (n(+) -doped GaAs and undoped GaAs). The direct measurement of the time dependence of the electric field of a reflected MIR pulse permits the observation of a noninstantaneous response of a Bragg mirror compared with a metallic surface, which is due to the penetration of the pulse into the multilayer structure.     

Mo/Si多层膜表面保护层设计

为提高Mo/Si多层膜的稳定性与使用寿命,通过分析多层膜驻波电场的分布,对表面保护层及多层膜最上层材料的厚度进行优化设计,使优化后的反射率最高.计算表明,一定厚度的表面保护层总对应一个最优的最上层材料厚度.在13.36 nm波长,膜对数为50的Mo/Si多层膜10度入射的理论反射率为74.47%;当添加厚度为2.3 nm的Ru作为表面保护层,对应多层膜最上层Si的优化厚度为3.93 nm,其理论反射率为75.20％.设计结果表明,通过优化设计表面保护层,可以提高多层膜稳定性,改善多层膜性能.     

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical‐emitting semiconductor GaAs‐based structures and intra‐cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous‐wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.     

Epitaxially stabilized AgGaSe2 for high-efficiency spin-polarized electron source

High-quality spin-polarized electron source (SPES) is of fundamental importance in the investigation of spin-dependent phenomena. Generally speaking, an ideal material for SPES application should have both large spin–orbit and positive crystal-field splitting. Currently, almost all sources in use with accelerators are based on photoemission from GaAs and related materials such as strained GaAs grown on GaAsP or InGaAs grown on GaAs. Nevertheless, the reduced critical layer thickness of these strained films leads to poor material quality and, consequently, low quantum efficiency. Besides other ordered ternary semiconductor compounds, tetragonal chalcopyrite ternary compounds have also been considered. However, since all these compounds have zero or negative crystal-field splitting, the achieved polarization and quantum efficiency are rather low. Here we propose a new material, AgGaSe₂ in the CuAu phase, as a high-quality SPES. We show that it is possible to grow epitaxially strain-free AgGaSe₂ in the CuAu phase on ZnSe substrate. Since this material has a direct-band gap, a large spin–orbit splitting, as well as a large positive crystal-field splitting, it is predicted to be a promising material for SPES with 100% spin polarization.