Improvement of total reflection X-ray fluorescence analysis of low Z elements on silicon wafer surfaces at the PTB monochromator beamline for undulator radiation at the electron storage ring BESSY II

Several different total reflection X-ray fluorescence (TXRF) experiments were conducted at the plane grating monochromator beamline for undulator radiation of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II, which provides photon energies between 0.1 and 1.9 keV for specimen excitation. The lower limits of detection of TXRF analysis were investigated for some low Z elements such as C, N, O, Al, Mg and Na in two different detection geometries for various excitation modes. Compared to ordinary XRF geometries involving large incident angles, the background contributions in TXRF are drastically reduced by the total reflection of the incident beam at the polished surface of a flat specimen carrier such as a silicon wafer. For the sake of an application-oriented TXRF approach, droplet samples on Si wafer surfaces were prepared by Wacker Siltronic and investigated in the TXRF irradiation chamber of the Atominstitut and the ultra-high vacuum TXRF irradiation chamber of the PTB. In the latter, thin C layer depositions on Si wafers were also studied.     

Detection limit calculations for the total reflection techniques of X-ray fluorescence analysis

In this work, theoretical calculations of detection limits for different total reflection techniques of X-ray fluorescence analysis are presented. Calculations include grazing incidence (TXRF) and gracing emission (GEXRF) conditions. These calculations are compared with detection limits calculated for conventional X-ray fluorescence (XRF). In order to compute detection limits, Shiraiwa and Fujino's model was used to calculate X-ray fluorescence intensities. This model makes certain assumptions and approximations to achieve the calculations, especially in the case of the geometrical conditions of the sample, and the incident and takeoff beams. Nevertheless, the calculated data of detection limits for conventional XRF and total-reflection XRF show a good agreement with previous results. The model proposed here allows us to analyze the different sources of background and the influence of the excitation geometry, which contribute to a better understanding of the physical processes involved in the XRF analysis by total reflection. Finally, a comparison between detection limits in total-reflection analysis at grazing incidence and at grazing emission is carried out. Here, a good agreement with the theoretical predictions of the Reciprocity Theorem is found, showing that, in theory, detection limits are similar for both techniques.     

Total reflection X-ray fluorescence analysis of river waters in its stream across the city of Cordoba,in Argentina

The aim of this work was to analyze the composition of river waters and to study their quality by detecting possible contaminants. The samples were taken at 32 points of the Suquía River in its stream across the city of Córdoba (in the Province of Córdoba, Argentina). The samples were analyzed with total reflection X-ray fluorescence (TXRF) using beam guides. Beam guides made of two Si plate reflectors were used as sample carriers and to guide the X-ray photons to the sample; the measurements were taken using the characteristic configuration that ensures the best excitation and detection conditions (in TXRF). The analyses were carried out by preconcentration of the water samples and by adding an internal standard (Gallium); small amounts of samples (30 μl) were deposited on the Si reflector plate and they were then analyzed in the total reflection regime. Spectra were analyzed with standard methods using conventional programs. The results show interesting behaviors of the concentration of trace elements along the river: elements of low atomic number (such as Ca, Cl, S, K) present higher concentrations as compared to high Z elements (such as Fe, Zn, Br, Sr); the concentrations of light elements follow a similar behavior along the stream, the same situation is observed in the set of elements with high atomic number. Some samples present high concentrations in certain elements indicating possible sources of contamination.     

The use of a portable total reflection X-ray fluorescence spectrometer for field investigation

A newly developed, portable total reflection X-ray fluorescence (TXRF) spectrometer was tested during a field campaign on Chilean lakes and a German river in January 2002. The field measurements were compared with laboratory measurements carried out on a stationary instrument in the German laboratory. For method validation certified reference material (NIST SRM 1640 Trace elements in natural water) and water samples from different freshwater sources were analyzed with both techniques and evaluated statistically. Based on these preliminary results, it could be concluded that the portable TXRF is a useful technique for the quantitative elemental screening of freshwater samples during field campaigns. Future tests with biological samples (e.g. biofilms and zooplankton), and suspended matter will provide information about the suitability of the portable TXRF for these materials.     

Total reflection X-ray fluorescence analysis of fly ash from Bulgarian coal-fired power plants

The contents of Cl, Ca, K, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, As, Se, Rb, Sr, Ba and Pb in raw coal fly ash from five Bulgarian power plants were determined by total reflection X-ray fluorescence (TXRF), using gallium as the internal standard. The samples were analysed as in slurry form in Triton? X-114. The experimental parameters, such as grain size, concentrations of fly ash slurry and excitation time were optimised. For validation of the method, the certified reference material BCR-176R fly ash was used. The precision of the results obtained is characterised by a relative standard deviation of approximately 10%. The resulting data confirm the suitability of TXRF for the simultaneous determination of major, minor and trace elements in coal fly ash samples. Further advantages provided by TXRF are easy sample preparation (no sample dissolution) and the small sample amount required for analysis.     

Optimized sample preparation procedures for the analysis of solid materials by total-reflection XRF

The total reflection X-ray fluorescence (TXRF) method has been used for the analysis of various types of solid materials of biological, geological and environmental origin. The sample preparation step prior to TXRF measurements has been optimized for the various solid samples, including their decomposition by applying both a microwave oven and a PTFE bomb. Complete procedures for the optimized decomposition from the point of view of speed and completeness of digestion, as well as of the overall precision and accuracy are presented.     

Synchrotron radiation total reflection X-ray fluorescence and energy dispersive X-ray fluorescence analysis on AP1™ films applied to the analysis of trace elements in metal alloys for the construction of nuclear reactor core components: a comparison

Synchrotron radiation induced total reflection X-ray fluorescence and conventional 45° energy dispersive X-ray fluorescence analysis using a 150-nm-thick AP1™ film as sample carrier have been exploited for the elemental analysis of traces in alloys used for the construction of reactor core components of nuclear power plants. Both techniques are well suited for the analysis since they require a low amount of sample (μl), important on one hand because of the limited disposal and on the other hand because of its high specific activity. The methods provide a very low background due to the total reflection phenomenon in TXRF and the thin AP1™ film sample support, respectively. The employment of synchrotron radiation was necessary since there are no laboratory sources which can deliver a collimated beam of the energy and intensity needed to excite the K-shell of the rare earth elements, allowing the achievement of minimum detection limits relevant for the proposed purpose (ng/g range). Moreover, the linear polarization of synchrotron radiation combined with a side-looking detection geometry manages to reduce the scattering due to the remaining matrix of the analyzed samples. Detection limits for Nb and for some of the rare earth elements (pg range for absolute detection limits and ng–μg/g range for concentration detection limits) obtained with the two techniques are presented and the two approaches are compared.     

Application of total reflection X-ray fluorescence in angle scan mode to establish the location of arsenic contamination in silicon and silicon oxide,respectively

Experiments have been carried out using total reflection X-ray fluorescence (TXRF) to determine the location of arsenic cross-contamination on or in silicon and silicon oxide, respectively, caused during argon-implantation. TXRF has been applied at varying angles of incidence — the so-called angle scan mode. By comparing the angle scan curves of implanted samples with those of a wafer, spin-coated with arsenic, at which arsenic is certainly located on top of the silicon surface, clear differences are observed. This indicates the presence of arsenic embedded in the subsurface. These observations are confirmed by Rutherford backscattering measurements, by modeling As-implantation profiles for low implantation energies as well as by step-by-step oxide etching followed by standard TXRF analysis. This fast and non-destructive application of TXRF angle scan appears a useful method for qualitative depth profiling.     

Determination of trace elements in bee honey,pollen and tissue by total reflection and radioisotope X-ray fluorescence spectrometry

Multielemental determinations in samples of various types of bee honey, pollen and bee tissue have been carried out using total reflection X-ray fluorescence spectrometry (TXRF) and radioisotope excited X-ray fluorescence spectrometry (XRF). The objective was to establish whether the elemental content of bee honey, in particular, correlates with any useful information about the environment, variety of honey, etc. An attempt has also been made to determine the X-ray techniques' ability to compete with atomic absorption spectrometry (AAS) and inductively coupled plasma-atomic emission spectrometry (ICP-AES), with regard to elemental sensitivity, accuracy, sample preparation procedures, and in particular, economic performance, which is very important in selecting an appropriate technique for the analysis of large numbers of samples. The results confirm the advantages of the TXRF method for trace element analysis, but only when utilising monochromatic excitation and selecting a proper sample preparation procedure. The radioisotope XRF technique, which does not require any sample preparation, is still very competitive in analysis of elements with concentrations above a few ten ppm. Preliminary results also confirm some correlations between the elemental content of honey and the status of the environment, and encourage further work in this direction     

Total reflection X-ray fluorescence spectrometers for multielement analysis: status of equipment

Multielement analysis by total reflection X-ray fluorescence spectrometry has evolved during two decades. At present commercial equipment is available for chemical analysis of all types of biological and mineral samples. The electronic industry has also benefited from scientific and technological developments in this field due to new instrumentation to determine contamination on the surface of silicon wafers (the equipment will not be covered in this paper). The basic components of the spectrometers can be summarized as follows: (a) excitation source; (b) geometric arrangement (optics) for collimation and monochromatization of the primary radiation; (c) X-ray detector; and (d) software for operation of the instrument, data acquisition and spectral deconvolution to determine the concentrations of the elements (quantitative analysis). As an optional feature one manufacturer offers a conventional 45° geometry for direct excitation. Personal communications of the author and commercial brochures available have allowed us to list the components used in TXRF for multielement analysis. Excitation source: high-power sealed X-ray tubes, output from 1300 to 3000 W, different mixed alloy anodes Mo/W are used but molybdenum, tungsten and copper are common; single anode metal ceramic low power X-ray tubes, output up to 40 W. Excitation systems can be customized according to the requirements of the laboratory. Detector: silicon–lithium drifted semiconductor detector liquid nitrogen cooled; or silicon solid state thermoelectrically cooled detector (silicon drift detector SDD and silicon-PIN diode detector). Optics: multilayer monochromator of silicon–tungsten, nickel–carbon or double multilayer monochromator. Electronics: spectroscopy amplifier, analog to digital converter adapted to a PC compatible computer with software in a Windows environment for the whole operation of the spectrometer and for qualitative/quantitative analysis of samples are standard features in the production of this instrument. The detection limits reported in the literature are presented; pricing, analytical capability, ease of operation, calibration and optical alignment as well as technical support are also discussed.     

Review on grazing incidence X-ray spectrometry and reflectometry

Grazing incidence X-ray techniques are now widely used for surface and thin film analysis. The present article overviews the recent advancement since 1993 of the grazing incidence X-ray spectrometry and reflectometry in both theoretical and experimental aspects. Every current topic related to the total reflection X-ray fluorescence spectrometry (TXRF) is described in detail through the introduction of numerous published works on the application in the various fields of the science and industrial technologies. Recent rapid growth in diffuse scattering at grazing incidence as well as in specular reflection is another important scope. The combined measurements of different grazing incidence X-ray techniques might be a future trend for realizing further advanced analysis of the surface and interfaces of materials.     

Comparison of synchrotron radiation total reflection X-ray fluorescence excitation–detection geometries for samples with differing matrices

The linear polarization of synchrotron radiation (SR) in the orbital plane leads to a background reduction in total reflection X-ray fluorescence (TXRF) analysis if a side-looking detector is used. The optimum orientation of the sample carrier in a SR-TXRF experiment, however, is determined by a trade-off between the exploitation of the linear polarization, the efficiency of excitation and the solid angle of detection and depends on the nature and size of the sample. SR-TXRF measurements on different sample types and using different reflector orientations have been carried out at the Hamburger Synchrotronstrahlungslabor bending magnet beamline L. A NIST standard water sample, a steel sample and an oil standard were analyzed with both a horizontal and a vertical sample carrier orientation. Strongly scattering samples led to lower detection limits with a horizontal reflector whereas weakly scattering samples showed lower detection limits with a vertical reflector configuration. On an intentionally contaminated wafer absolute detection limits of 6.6 fg for Ni could be extrapolated.     

Sample preparation for evaluation of detection limits in X-ray fluorescence spectrometry.

The influence of analyte mass concentration on determination of detection limits in X-ray fluorescence spectrometry has been investigated experimentally. Both the total reflection X-ray fluorescence (TXRF) and the conventional energy-dispersive X-ray fluorescence techniques have been used to derive the dependence of analyte mass concentration on the values of detection limits. Results obtained indicate that values of detection limits are optimum, or in other words, they are closer to the true detection limit of the technique, when analyte concentrations are in the range of 10 times of the detection limit.     

Future in-fab applications of total reflection X-ray fluorescence spectrometry for the semiconductor industry

In-fab analytical methods are of increasing interest for wafer monitoring in advanced semiconductor device manufacturing. In particular, an analytical method which allows non-destructive measurements of implant dose and surface roughness would be very beneficial. We investigated the capabilities of total reflection X-ray fluorescence spectrometry (TXRF) to determine implant dose and surface roughness. These advanced applications of TXRF can be used to monitor processes like implantation, rapid thermal annealing, and chemical mechanical polish. As implants in Si at implant energies of 2 keV, 10 keV and 50 keV were studied. Angle resolved TXRF measurements were performed with a commercial Rigaku 3750 system. The TXRF results were compared to secondary ion mass spectrometry (SIMS) measurements.     

Determination of trace elements in macrozoobenthos samples by total reflection X-ray fluorescence analysis

The paper describes the analysis of a set of metals in macrozoobenthos samples from a river in Western Austria by using total reflection X-ray fluorescence analysis (TXRF). Metal concentrations in aquatic insect larvae from an industrially contaminated site are significantly higher than in larvae from a reference site. Furthermore, species-specific differences in metal accumulation were found. TXRF allows multi-element analysis of very low metal concentrations in very small sample masses (e.g. single aquatic insect larvae with a dry weight of only a few milligrams). Due to its multi-element capability and high sensitivity total reflection X-ray fluorescence analysis is a valuable tool for biomonitoring studies of metal contamination in aquatic ecosystems.     

Analytical approaches for Hg determination in wastewater samples by means of total reflection X-ray fluorescence spectrometry

At present, there is a considerable interest in Hg monitoring in wastewater samples due to its widespread occurrence and the high toxicity of most of its compounds. Hg determination in water samples by means of total reflection X-ray fluorescence spectrometry (TXRF) entails some difficulties due to the high vapor pressure and low boiling point of this element that produce evaporation and loss of Hg from the surface of the reflector during the drying process, commonly used for sample preparation in TXRF analysis.The main goal of the present research was to develop a fast and simple chemical strategy to avoid Hg volatilization during the analysis of wastewater samples by TXRF spectrometry. Three different analytical procedures were tested for this purpose: (i) increasing the viscosity of the wastewater sample by adding a non-ionic surfactant (Triton^® X-114), (ii) Hg immobilization on the quartz reflectors using the extractant tri-isobutylphosphine (Cyanex 471X) and (iii) formation of a stable and non-volatile Hg complex into the wastewater sample. The best analytical strategy was found to be the formation of a Hg complex with thiourea (pH = 10) before the deposition of 10 μL of sample on the reflector for following TXRF analysis. Analytical figures of merit such as linearity, limits of detection, accuracy and precision were carefully evaluated. Finally, the developed methodology was applied for the determination of Hg in different types of wastewater samples (industrial effluents, municipal effluents from conventional systems and municipal effluents from constructed wetlands).     

Trace analysis for 300 mm wafers and processes with total reflection X-ray fluorescence

Total reflection X-ray fluorescence (TXRF) is essential for 300-mm silicon wafer production and fabrication of semiconductor devices. The 300-mm TXRF enables non-destructive contamination analysis on wafers for process development and process control. The TXRF system shows a very stable continuous operation, which allows accurate trace and ultra trace analysis on the silicon surface. It is equipped with two excitation sources covering the requirements of very sensitive measurement and wide element range. The TXRF is a key technology for contamination control during wafer reclaim. For this purpose we show that the system is able to examine the wafers during different processing states of reclaim. The system sensitivity is influenced by the surface of the wafer. For important processing steps, e.g. double side polishing, the sensitivity is as good as for measurements on hazefree polished wafers. We show with TXRF that cross-contamination with copper during double side polishing is suppressed.     

Synchrotron radiation induced total reflection X-ray fluorescence of low Z elements on Si wafer surfaces at SSRL — comparison of excitation geometries and conditions

The analysis of low Z elements, like Na and Al at ultra trace levels (<10¹⁰ atoms/cm²) on Si wafer surfaces is required by the semiconductor industry. Synchrotron radiation induced total reflection X-ray fluorescence analysis (SR-TXRF) is a promising method to fulfill this task, if a special energy dispersive detector with an ultra thin window is used. Synchrotron radiation is the ideal excitation source for TXRF of low Z elements due to its intense, naturally collimated and linearly polarized radiation with a wide spectral range down to low energies even below 1 keV. TXRF offers some advantages for wafer surface analysis such as non-destructive analysis and mapping capabilities. Experiments have been performed at the Stanford Synchrotron Radiation Lab (SSRL) using Beamline 3-4 (BL 3-4), a bending magnet beamline using white (<3 keV) and monochromatic radiation, as well as Beamline 3-3 (BL 3-3), using a crystal monochromator as well as a multilayer monochromator. A comparison of excitation–detection geometry was performed, using a side-looking detector with a vertically positioned wafer as well as a down-looking detector with a horizontally arranged wafer. The advantages and disadvantages of the various geometrical and excitation conditions are presented and the results compared. Detection limits are in the 100-fg range for Na, as determined with droplet samples on Si wafer surfaces.     

Study on deposition kinetics of high-K materials by X-ray fluorescence techniques

X-ray fluorescence (XRF) techniques have been used to study, on different pretreated substrates, deposition kinetics of HfO₂ and Al₂O₃, two of the possible high-K materials under evaluation for future integration in microelectronic devices.X-ray fluorescence (XRF) and total X-ray fluorescence (TXRF) measurements demonstrate their capability to give useful information on the very initial growing cycles of deposition and on carbon and chlorine inclusion in the film. Moreover, XRF signal shows a good linear correlation with layer thickness for thick samples of both materials.