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1.
V. Romano M. Meier N. D. Theodore D. K. Marble M.-A. Nicolet 《Applied Physics A: Materials Science & Processing》2011,104(1):357-364
Films of 260 nm thickness, with atomic composition Ta42Si13N45, on 4″ silicon wafers, have been irradiated in air with single laser pulses of 200 femtoseconds duration and 800 nm wave
length. As sputter-deposited, the films are structurally amorphous. A laterally truncated Gaussian beam with a near-uniform
fluence of ∼0.6 J/cm2 incident normally on such a film ablates 23 nm of the film. Cross-sectional transmission electron micrographs show that the
surface of the remaining film is smooth and flat on a long-range scale, but contains densely distributed sharp nanoprotrusions
that sometimes surpass the height of the original surface. Dark field micrographs of the remaining material show no nanograins.
Neither does glancing angle X-ray diffraction with a beam illuminating many diffraction spots. By all evidence, the remaining
film remains amorphous after the pulsed femtosecond irradiation. 相似文献
2.
J. Jun C. Jin H. Kim J. Kang C. Lee 《Applied Physics A: Materials Science & Processing》2009,96(4):813-818
The structure and photoluminescence properties of TiO2-coated ZnS nanowires were investigated. ZnS nanowires were synthesized by thermal evaporation of ZnS powder and then coated
with TiO2 by using the metal organic chemical vapor deposition (MOCVD) technique. We performed scanning electron microscopy, transmission
electron microscopy (TEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy, and photoluminescence (PL) spectroscopy
to characterize the as-synthesized and TiO2-coated ZnS nanowires. TEM and XRD analyses revealed that the ZnS core and the TiO2 coatings had crystalline zinc blende and crystalline anatase structures, respectively. PL measurement at room temperature
showed that the as-synthesized ZnS nanowires had two emissions: a blue emission centered in the range from 430 to 440 nm and
a green emission at around 515 nm. The green emission was found to be dominant in the ZnS nanowires coated with TiO2 by MOCVD at 350°C for one or more hours, while the blue emission was dominant in the as-synthesized ZnS nanowires. Also the
mechanisms of the emissions were discussed. 相似文献
3.
The phase transitions in Pd40Ni10Cu30P20 bulk metallic glass (BMG) have been studied under high pressure and high temperature (HP & HT) by X-ray diffaction measurements
with synchrotron radiation source. We found that the BMG underwent a phase transitions of amorphous-crystalline-amorphous
at 10 GPa upon heating. The parallel experiments were carried out at 7 GPa, while we did not observe the amorphous-crystalline-amorphous
transitions by increasing temperature. Quenching the melted BMG at 7 GPa, it was found that the phase crystallized from the
melt differed from the primary phase crystallized from the starting amorphous solid upon heating suggesting there existed
a distinct mechanism in two cases. 相似文献
4.
Hao Wang Y. Wang J. Feng C. Ye B. Y. Wang H. B. Wang Q. Li Y. Jiang A. P. Huang Z. S. Xiao 《Applied Physics A: Materials Science & Processing》2008,93(3):681-684
High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The
as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage
shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in
the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage
current density of 4.2×10−8 A/cm2 at the applied voltage of −1.5 V. 相似文献
5.
β-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the
length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at
290 nm and 390 nm at room temperature.
Received: 27 June 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. Fax: +886-6/234-4496, E-mail: wujj@mail.ncku.edu.tw 相似文献
6.
V. P.S. Awana A. Vajpayee M. Mudgel V. Ganesan A. M. Awasthi G. L. Bhalla H. Kishan 《The European Physical Journal B - Condensed Matter and Complex Systems》2008,62(3):281-294
We report synthesis, structure/micro-structure, resistivity under magnetic
field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity
κ(T), and magnetization of ambient pressure argon annealed
polycrystalline bulk samples of MgB2, processed under identical
conditions. The compound crystallizes in hexagonal structure with space
group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs
showing various types of defect features along with the presence of 3–4 nm
thick amorphous layers forming the grain boundaries of otherwise crystalline
MgB2. Raman spectra of the compound at room temperature exhibited
characteristic phonon peak at 600 cm-1. Superconductivity is observed
at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power
S(T), and thermal conductivity κ(T) measurements. The power law fitting
of ρ(T) give rise to Debye temperature (ΘD) at 1400 K which is
found consistent with the theoretical fitting of S(T), exhibiting Θ
D of 1410 K and carrier density of 3.81 × 1028/m3. Thermal
conductivity κ(T) shows a jump at 38 K, i.e., at Tc, which was
missing in some earlier reports. Critical current density (Jc) of up to
105 A/cm2 in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K
is seen from magnetization measurements. The irreversibility field, defined
as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe
at 4, 10 and 20 K respectively. The superconducting performance parameters
viz. irreversibility field (Hirr) and critical current density
Jc(H) of the studied MgB2 are improved profoundly with addition of
nano-SiC and nano-diamond. The physical property parameters measured for
polycrystalline MgB2 are compared with earlier reports and a
consolidated insight of various physical properties is presented. 相似文献
7.
Manganese oxide (hausmannite) nanowires were prepared by annealing precursor powders at a temperature of 800 °C for 3 h, which
were produced in a novel inverse microemulsion (IμE) system. The microstructures of the as-prepared Mn3O4 nanowires were investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectra. It has been
found that the Mn3O4 nanowires were relatively straight and their surfaces were smooth with a typical diameter of 75–150 nm. The formation mechanism
of the Mn3O4 nanowires is discussed.
Received: 30 May 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: wangqun@nju.edu.cn 相似文献
8.
Tingyin Ning Cong Chen Yueliang Zhou Heng Lu Dongxiang Zhang Hai Ming Guozhen Yang 《Applied Physics A: Materials Science & Processing》2009,94(3):567-570
CaCu3Ti4O12 (CCTO) thin films were successfully prepared on LaAlO3 substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using
Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear
optical susceptibility, χ
(3), of the CCTO film were obtained to be 2.79×10−8 esu and 3.30×10−6 esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear
optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films
on LaAlO3 substrates are promising candidate materials for applications in nonlinear optical devices. 相似文献
9.
L. Nedelcu A. Ioachim M. I. Toacsan M. G. Banciu I. Pasuk M. Buda N. Scarisoreanu V. Ion M. Dinescu 《Applied Physics A: Materials Science & Processing》2008,93(3):675-679
Ba0.6Sr0.4TiO3 (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition
(PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhibit a polycrystalline
cubic structure with a distorted unit cell. Scanning Electron Microscopy investigations showed a columnar microstructure with
size of spherical grains up to 150 nm. The capacitance–voltage (C–V) characteristics of the BST films were performed by applying
a DC voltage up to 5 V. A value of 280 for dielectric constant and 12.5% electrical tunability of the BST capacitor have been
measured at room temperature. 相似文献
10.
J.L. Fu D.Q. Gao Y. Xu D.S. Xue 《Applied Physics A: Materials Science & Processing》2008,90(1):119-121
Fe-rich Fe96-xZrxB4 (0≤x≤7) nanowires were first prepared by electrodepositing into anodic aluminum oxide templates. Transmission electron microscope analysis shows that the nanowires are uniform and are about 100 nm in diameter with an aspect ratio of around 75. The broad peaks of X-ray diffraction and the Mössbauer spectrum indicate that the Fe96-xZrxB4 nanowires are composed of α-Fe-like and Zr-rich FeZrB phases. Selected area electro diffraction results also indicate that the structure of Fe89Zr7B4 nanowires is amorphous. A vibrating sample magnetometer is employed to study the magnetic properties of nanowire arrays at room temperature. The coercivity of nanowire arrays in parallel to the wire axis decreases with increasing Zr content. 相似文献
11.
M. Kodu T. Avarmaa H. Mändar R. Jaaniso 《Applied Physics A: Materials Science & Processing》2008,93(3):801-805
This paper reports the first results obtained on monobarium gallate thin films grown on silicon and platinum coated substrates
by pulsed laser deposition. The influence of oxygen background pressure and substrate (or post-annealing) temperature on the
film properties was studied. The films were characterized by XRD, RHEED, AFM, photoelectron and electrical impedance spectroscopy.
The structure analysis showed that the films crystallized into a hexagonal phase, most probably into (metastable) α-BaGa2O4. Depending on deposition conditions, films with different (from nearly epitaxial to polycrystalline) textures were obtained. 相似文献
12.
X.T. Li P.Y. Du H. Ye C.L. Mak K.H. Wong 《Applied Physics A: Materials Science & Processing》2008,92(2):397-400
Textured LixNi2-xO (LNO) thin films have been fabricated on (001)MgO substrates by pulsed laser deposition technique. The as-deposited LNO
films shows a conductivity of 2.5×10-3 Ω m and possess a transmittance of about 35% in the visible region. Subsequent deposition of Sr0.6Ba0.4Nb2O6 (SBN60) thin film on these LNO-coated MgO substrates resulted in a textured SBN layer with a 〈001〉 orientation perpendicular
to the substrate plane. Phi scans on the (221) plane of the SBN layer indicated that the films have two in-plane orientations
with respect to the substrate. The SBN unit cells were rotated in the plane of the film by ± 8.2° as well as ± 45° with respect
to the LNO/MgO substrate. Besides the highly (00l)-orientation, the SBN films also exhibited a dense microstructure as shown
by scanning electron microscopy. The electro-optic coefficient (r33) of the SBN film was measured to be 186 pm/V. On the basis of our results, we have demonstrated that the LNO film can be
used as a buffer layer as well as a transparent bottom electrode for waveguide applications. The SBN/LNO heterostructure is
also a suitable candidate for integrated electro-optics devices.
PACS 42.79.Gn; 42.82.Et; 78.20.Ci 相似文献
13.
The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd3+ ions in CaNb2O6 crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10−20 cm2 with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd3+ ions in CaNb2O6 crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω
t
are Ω
2=5.321×10−20 cm2,Ω
4=1.734×10−20 cm2,Ω
6=2.889×10−20 cm2. The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β
1=36.03%,β
2=52.29%,β
3=11.15%,β
4=0.533%. The emission cross section at 1062 nm is 9.87×10−20 cm2. 相似文献
14.
A. Shumelyuk M. Wesner M. Imlau S. Odoulov 《Applied physics. B, Lasers and optics》2009,95(3):497-503
The intensity dependence of the photorefractive response of Sn2P2S6 is studied for the Kr+-laser wavelength of 647 nm and pump-beam intensities of up to 10 W/cm2. A considerable enhancement of the two-beam coupling gain factor with increasing intensity at a grating spacing of ≃1 μm
is attributed to a light-induced increase of the effective trap density. The large gain reached at high intensities is applied
for the build up of a double phase conjugate mirror with a sub-millisecond switch-on time. 相似文献
15.
L. Kovács M. Mazzera E. Beregi R. Capelletti 《Applied physics. B, Lasers and optics》2009,94(2):273-277
Several weak absorption bands have been observed in the optical absorption spectra of pure and rare-earth-doped YAl3(BO3)4 single crystals in the 3350– 3650 cm−1 wave number region. Two of them, peaking at about 3377 cm−1 and 3580 cm−1 in the 8 K spectra, appear in most of the samples. They are tentatively attributed to the stretching mode of OH− ions incorporated in the crystal during the growth. An additional absorption band at about 5250 cm−1 at 8 K has also been detected in almost all samples. The temperature and polarization dependences of these bands, and their
possible origin, are discussed. 相似文献
16.
R. Moubah S. Colis C. Ulhaq-Bouillet G. Schmerber N. Viart M. Drillon A. Dinia D. Muller J. J. Grob 《The European Physical Journal B - Condensed Matter and Complex Systems》2008,66(3):315-319
Layered cobalt oxides Ca3Co4O9 thin films have been grown directly on c-cut sapphire substrates using pulsed laser deposition. X-ray diffraction and transmission
electron microscopy characterizations show that the deposited films present the expected monoclinic structure and a texture
along the direction perpendicular to the Al2O3(001) plane. The Ca3Co4O9 structure presents six variants in the film plane. Rutherford backscattering spectroscopy shows that the films are stoichiometric
and that the film thickness agrees with the nominal value. The susceptibility χ of the films, recorded along the c-axis of
the substrate, after field cooling and zero field cooling in an applied field of 1 kOe shows two magnetic transitions at 19
and 370 K which agree well with previous findings on single crystal samples. In turn, at low temperature (5 K), the magnetization
curve along the c-axis exhibits coercive field and remanent magnetization much smaller than those reported for bulk samples,
which can be related to the influence of structural variants and structural defects. 相似文献
17.
S. A. Ahmed 《Applied Physics A: Materials Science & Processing》2008,92(3):565-570
Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi2Se3 and stoichiometric ternary compound in the quasi-binary system SnSe–Bi2Se3 in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation
of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor,
by using a single conduction band model. The density of states effective mass m
*=0.15m
0 of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The
temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the
charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes.
On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change
in the electrical resistivity with temperature between 420 and 90 K is explained. 相似文献
18.
Solid polymer electrolytes (SPE) based on poly-(vinyl alcohol) (PVA)0.7 and sodium iodide (NaI)0.3 complexed with sulfuric acid (SA) at different concentrations were prepared using solution casting technique. The structural
properties of these electrolyte films were examined by X-ray diffraction (XRD) studies. The XRD data revealed that sulfuric
acid disrupt the semi-crystalline nature of (PVA)0.7(NaI)0.3 and convert it into an amorphous phase. The proton conductivity and impedance of the electrolyte were studied with changing
sulfuric acid concentration from 0 to 5.1 mol/liter (M). The highest conductivity of (PVA)0.7(NaI)0.3 matrix at room temperature was 10−5 S cm−1 and this increased to 10−3 S cm−1 with doping by 5.1 M sulfuric acid. The electrical conductivity (σ) and dielectric permittivity (ε′) of the solid polymer electrolyte in frequency range (500 Hz–1 MHz) and temperature range (300–400) K were carried out.
The electrolyte with the highest electrical conductivity was used in the fabrication of a sodium battery with the configuration
Na/SPE/MnO2. The fabricated cells give open circuit voltage of 3.34 V and have an internal resistance of 4.5 kΩ. 相似文献
19.
T. Rudolf Ch. Kant F. Mayr M. Schmidt V. Tsurkan J. Deisenhofer A. Loidl 《The European Physical Journal B - Condensed Matter and Complex Systems》2009,68(2):153-160
We studied the optical properties of antiferromagnetic ZnCr2Se4 by infrared spectroscopy up to 28,000 cm-1 and for temperatures from 5 to 295 K. At the magnetic phase transition at 21 K, one of the four phonon modes reveals a clear
splitting of 3 cm-1 as a result of spin-phonon coupling, the other three optical eigenmodes only show shifts of the eigenfrequencies. The antiferromagnetic
ordering and the concomitant splitting of the phonon mode can be suppressed in a magnetic field of 7 T. At higher energies
we observed a broad excitation band which is dominated by a two-peak-structure at about 18,000 cm-1 and 22,000 cm-1, respectively. These energies are in good agreement with the expected spin-allowed crystal-field transitions of the Cr3+ ions. The unexpected strength of these transitions with d-d character is attributed to a considerable hybridization of the
selenium p with the chromium d orbitals. 相似文献
20.
Dinesh Pathak R. K. Bedi Davinder Kaur 《Applied Physics A: Materials Science & Processing》2009,95(3):843-847
AgInSe2 films were prepared by a thermal evaporation technique onto Si(100) substrates at a pressure of 10−5 mbar. Structural and optical properties of films deposited at 300 and 473 K have been investigated. The film composition
was studied by energy dispersive analysis through X-rays. X-ray diffraction patterns indicate that AgInSe2 films have chalcopyrite structure with strong preferred orientation in the (112) direction. Average vertical crystallite
size of 25 nm was observed. The optical energy gaps of 1.20 and 1.90 eV were obtained due to the fundamental absorption edge
and a transition originating from crystal field splitting, respectively. Field emission scanning electron microscopy shows
loosely packed grains of spherical symmetry with some facets. 相似文献