Amplitude dependence of the internal friction and Young’s modulus defect of polycrystalline indium

The dependences of the internal friction and the Young’s modulus defect of polycrystalline indium on the oscillatory strain amplitude have been studied over a wide range of temperatures (7–320 K) and oscillatory strain amplitudes (10⁻⁷−3.5 × 10⁻⁴) at oscillatory loading frequencies of about 100 kHz. It has been revealed that the amplitude dependences of the internal friction and the Young’s modulus defect include stages associated with the interaction of dislocations with point defects and the interdislocation interaction. The temperature range characterized by the formation of point-defect atmospheres (the Cottrell atmospheres) near dislocations in indium has been determined.     

Dislocations used to probe the defect state of an ionic crystal lattice excited by a pulsed magnetic field

This paper presents the results of an investigation into the effect of a pulsed magnetic field on the state of linear and point defects in ionic crystals. For different amplitudes (1–7 T) and pulse lengths (3×10⁻⁵ to 10² s) of the pulsed field the kinetics of the transformation of defects into a new state and their relaxation after the field is turned off are studied in the temperature range 77–400 K. It is found that the relaxation of the states of point defects is mainly through recombination, and the change of state of the dislocations and of the point defects contribute nonadditively to the change in the dislocation mobility. The exposure of the crystal to a magnetic field leads to an increase in the dislocation mobility when the sample is mechanically stressed and to a decrease in the dislocation displacement with a second field pulse. Fiz. Tverd. Tela (St. Petersburg) 39, 634–639 (April 1997)     

Electrical conductivity of germanium with dislocation grids

Samples of n-type germanium with a donor concentration N _d=2.4×10¹⁶ cm⁻³ are plastically deformed to a degree of strain equal to 18–40% to detect static conduction by electrons trapped on dislocations in a system of dislocation grids. In samples with 20%<δ<31%, which retain an electronic type of conductivity, the conductivity for T<8 K, which is weakly temperature-dependent, is associated with conduction by electrons trapped on dislocations. The nonmonotonic dependence of the conductivity at 4.2 K on the degree of strain as the latter increases from 18% to 40% attests to the existence of an energy gap between the donor and acceptor dislocation states in strongly plastically deformed germanium. Zh. éksp. Teor. Fiz. 115, 115–125 (January 1999)     

Dislocation diffusion mechanism in Pd/Ag crystals

In epitaxial Pd/Ag crystals, dislocations in the palladium film have a large influence on the effective diffusion coefficient. In silver the diffusion coefficient hardly depends on the dislocation density. With a dislocation density of 10¹⁰m⁻² the diffusion coefficient in silver is larger than in the palladium, and at 773 K it is 10⁻¹⁸ m²/s. At a dislocation density of 3·10¹² m⁻², the diffusion coefficient in the palladium becomes larger than in silver, and at 773 K it is 3·10⁻¹⁸ m²/s. It is most likely that diffusion in silver takes place via the lattice, while in palladium it occurs at mobile dislocation sites. State Technical University, Samarsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 116–118, August, 1996.     

Size effects under plastic deformation of microcrystals and nanocrystals

A theoretical analysis of size effects in plastically deformed crystals with transverse sizes in micro and nanometer ranges has been performed in the framework of the dislocation-kinetic approach. The analysis is based on the evolution equation of the dislocation density in these crystals and takes into account the generation of dislocations from surface dislocation sources and the escape of dislocations from the crystal through the crystal surface. It has been established that the generation of dislocations from the sources leads to a strong strain hardening of the crystal and that the escape of dislocations through the crystal surface results in a fast equilibration of these two kinetic processes. As a result, there occurs a strong “exhaustion” of strain hardening of thin crystals at the early stage of their plastic deformation in accordance with experiments. According to the theory, the flow stresses σ and transverse sizes D of microcrystals and nanocrystals are related by the expressions σ ∼ D ⁻ⁿ (n = 0.625–1.0), which are in agreement with the experiment.     

Local surface segregations of implanted aluminum in an iron crystal with a low density of defects

The surface distribution of elements is studied by scanning a 3-MeV proton beam along the surface of a bcc-Fe sample implanted with aluminum ions in the dose interval (1–50) · 10¹⁶ cm⁻². Ring-shaped regions, up to 30 μm in diameter, with a high density of aluminum, which appear at implantation doses (5–20) · 10¹⁶ cm⁻², are observed. These regions appear as a result of radiation-stimulated segregation processes. A mechanism based on the existence of a low density of dislocations in the initial crystal is proposed to explain the implanted impurity segregation processes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 86–89 (10 January 1997)     

Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

The residual polarization of negative muons in n-type silicon with impurity density (1.6±0.2) · 10¹³ cm⁻³ is investigated as a function of temperature in the range 10–300 K. The measurements are performed in an external magnetic field of 0.08 T oriented transversely to the spin of the muons. Relaxation of the muon spin and a shift of the precession frequency are observed at temperatures below 30 K. The relaxation rate at 30 K equals 0.25±0.08 μs⁻¹. The shift of the precession frequency at 20 K equals 7 · 10⁻³. Both the relaxation rate and the shift of the precession frequency increase as the temperature decreases. At temperatures below 30 K the relaxation rate is described well by the relation Λ=bT ^−q , where q=2.8±0.2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 539–543 (10 April 1996)     

On the nature of the influence of an electric current on the magnetically stimulated microplasticity of Al single crystals

A large increase in dislocation mobility in Al single crystals in a static magnetic field in the absence of mechanical loading of the samples is observed when a dc electric current of low density (10⁵–10⁶ A/m²)is additionally passed through the samples. Apparently, the role of the current reduces to depinning of dislocations from strong pinning centers on the surface of the crystal as a result of surface electromigration of defects. This interpretation is supported by the fact that in samples whose surface is insulated by a layer of lacquer the passage of a current through the volume of the crystal does not change the ordinary dislocation mobility level in a magnetic field. It is hypothesized that surface electromigration of defects, which frees dislocations and unblocks dislocation sources, also plays a key role in the physical mechanism of the long-ago discovered macroplastification of metals upon the passage of an electric current through them. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 10, 788–793 (25 May 1998)     

Radiative emission of hot metallic clusters

Analysis of experimental data on the relaxation of freely moving hot niobium and tungsten clusters shows that they are cooled as a result of radiative emission. The absorption cross sections per atom of niobium and tungsten clusters in the temperature range 3100–3700 K are (4 −7)×10⁻¹⁸ cm², and the absorption process loses its resonant character at these temperatures. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 6, 453–458 (25 March 1999)     

Screening of the elastic field in a dislocation ensemble

The phenomenon of screening of the elastic field of screw dislocations is investigated on the basis of a system of self-consistent field equations for a dislocation ensemble. Expressions are derived for the effective dislocation interaction potential, the screening length, and the average elastic field energy associated with the correlation interaction of dislocations. An expression for the correlation dislocation flux is formulated in the slightly inhomogeneous case. Fiz. Tverd. Tela (St. Petersburg) 39, 1575–1579 (September 1997)     

Anomalies of internal friction in CsI single crystal at liquid helium temperatures caused by plastic deformation

Acoustic relaxation in undeformed and plastically deformed CsI single crystal has been studied using the composite oscillator technique at frequencies (1–7) × 10⁵ Hz in the temperature range 2–15 K. Plastic deformation leads to appearance of an internal friction peak localized in the temperature interval 4–5 K. It is shown that the peak shifts towards higher temperatures when increasing the vibration frequency and corresponds to a thermally activated relaxation process with very low values of the activation energyU ≈ 1.9×10⁻³ eV and the attack frequencyν ₀≈6.7 × 10³ s⁻¹. Interaction of sound with dislocation kinks migrating in the second order Peierls relief is considered as a possible mechanism of the peak. Research was made possible in part by Grants U9T000 and U9T200 from the International Science Foundation and supported in part by the Fundamental Research Foundation of Ukraine (Project 2.4/156 “Bion”).     

Magnetoplastic effect in silicon: A search for new methods of controlling structure-sensitive properties of elemental semiconductors

The effect of static magnetic fields up to 1 T on the state of impurity point defects and the mobility of surface dislocation segments in doped (0.01–1.00 Ω cm) silicon has been considered. Long-lived (∼100 h) changes in the state of point defects have been revealed from the mobility of dislocations introduced after the magnetic-field treatment. The concentration dependence of the magnetoplastic effect in p-type silicon has been studied. A threshold impurity concentration of 10¹⁵ cm⁻³ has been found, below which the magneto-plastic effect has not been observed. The influence of magnetic-field pretreatment on the expectation times and activation barriers for dislocation depinning from stoppers and the effect of thermal preannealing on the magnetoplasticity in Si have been considered.     

Interaction of shockley partial dislocations with reacting forest dislocations

Dislocation combinations formed as a result of interaction between a glissileBσ,d Shockley partial dislocation with reacting undissociated forest dislocations are considered. The value of the parameters characterizing the strength <k> of the dislocation combinations, the probability β_r of their formation, and the interaction intensity α_r of the reacting dislocations are determined for an orientation of the [100] deformation axis of an FCC single crystal for all components of the dislocation loop. Tomsk State Architectural-Building Academy. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 3–8, May, 1997.     

Dislocation spectroscopy of crystals

A new method of studying the energy characteristics of dislocations is proposed, which is based on the investigation of the interaction of moving dislocations with purposefully introduced electronic and hole centers. A study has been made of KCl, NaCl, KBr, LiF, and KI alkali halide crystals containing electronic F and hole V _K and Me ⁺⁺ (Cu⁺⁺, Ag⁺⁺, Tl⁺⁺, In⁺⁺) centers. Investigation of the temperature dependence of the dislocation interaction with the F centers permitted determination of the position of the dislocation-induced electronic band (DEB) in the band diagram of the crystal. In KCl, the DEB is separated by ≈2.2 eV from the conduction-band minimum. It is shown that dislocations transport holes from the centers lying below the dislocation-induced hole band (DHB) (X ⁺, In⁺⁺, Tl⁺⁺, V _K) to those above the DHB (the Cu⁺ and Ag⁺ centers). Such a process is temperature independent. The DHB position in the crystal band diagram has been determined; in KCl it is separated by ≈1.6 eV from the valence-band top. The effective radii of the dislocation interaction with the electronic F and hole X ⁺, V _K, and Tl⁺⁺ centers have been found. Fiz. Tverd. Tela (St. Petersburg) 41, 2139–2146 (December 1999)     

Quantitative x-ray topographic analysis of the defects of 6H-SiC single crystals and homoepitaxial silicon carbide

Planar dislocation pileups (PDPs) and curvilinear dislocation segments (CDSs) are considered as indicators of the local elastic shear stress fields (LESSFs) that existed in the growing single crystals at the time of stabilization of their dislocation structure. Calculations using the theory of dislocations with the experimental parameters of PDPs and CDSs measured from the x-ray topograms (taken by the Lang and divergent-polychromatic-beam (DPB) methods) give values of the LESSFs in the range (0.2–1.5)×10⁶ Pa for thin single-crystal wafers of SiC (6H) grown by sublimation in a graphite container. A strong nonuniform bending of the single-crystal wafers is observed; for the x-ray topographic study of the dislocation structure in these wafers the DPB method is preferable to the Lang method on account of its low sensitivity to bending. Zh. Tekh. Fiz. 69, 64–67 (July 1999)     

The influence of a magnetic field on the inelastic properties of LiF crystals

The effect of weak magnetic fields (0.1–0.8 T) on the internal friction and Young’s-modulus defect of LiF crystals is investigated over a range of relative strain amplitudes ɛ ₀ from 10⁻⁶ to 10⁻⁴ at frequencies of 40 and 80 kHz. Experiments with these fields show that the internal friction increases and the effective elastic modulus decreases, indicating an increase in the plasticity of the samples. Plots are obtained of the internal friction versus the magnitude of the magnetic field at various values of the strain amplitude ɛ ₀. Fiz. Tverd. Tela (St. Petersburg) 41, 1035–1040 (June 1999)     

Magnetoplastic effect in LiF crystals and longitudinal spin relaxation

New features of the dependence of the average travel distance l of dislocations on the magnetic field B have been found in an investigation of the magnetostimulated dislocation mobility in LiF crystals: A transition has been found from ordinary proportionality l∝B ² to saturation l≈ const in high fields B. It is shown that the experimental points can be described satisfactorily by the theoretical dependence l∝ [(B ₀/B)²+1]⁻¹ (B ₀≈0.8 T), typical for the mechanism of longitudinal spin relaxation in a system of radical pairs, which are supposedly formed when dislocation nuclei interact with paramagnetic impurity centers. According to the theory, the level of the field B ₀ is determined by the characteristic frequency of the oscillations of the internal fields in the lattice, which for B ₀∼1 T is of the order of 10¹¹s⁻¹, which corresponds to the typical frequency of characteristic oscillations of dislocation segments between pinning centers, which, naturally, does not depend on temperature. This in turn explains the fact that the measured values of B ₀ are the same at 293 K and 77 K. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 749–753 (10 December 1999)     

Evolution of dislocation structures having various orientations in strained single crystals of the alloy Ni3Ge

The dislocation structure of strained single crystals of Ni₃Ge with various orientations is investigated by electron microscopy. The evolution of the dislocation structure parameters is studied as a function of the degree of strain, temperature, and orientation of the single crystals. Analysis of the experimental dependences of the yield stress on the density of dislocations leads to certain conclusions about how various mechanisms for dislocation drag make temperature-dependent contributions to the deforming stress, and about the nature of the thermal hardening of Ni₃Ge. Fiz. Tverd. Tela (St. Petersburg) 40, 672–680 (April 1998)     

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×10¹²–1×10¹⁴ cm⁻² have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×10¹²–1×10¹³ cm⁻²) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×10¹⁴ cm⁻² the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 853–857 (May 1997)     

Detection of (<Emphasis Type="Italic">C</Emphasis> + <Emphasis Type="Italic">A</Emphasis>)-type dislocation self-blocking in magnesium

The self-blocking effect predicted theoretically and then observed in intermetallides is established for a pure metal, namely, for magnesium. This effect can be observed only for magnesium single crystals whose axis is parallel to the c axis and whose yield stress behavior σ _y (T) has a temperature anomaly. For such single crystals, the self-blocking of the (c + a)-type edge dislocations is established during pyramidal slip of type II. The self-blocking is proved by dislocation extension along the preferred direction without external stress. In this case, the á 1[`1]00 ñ \left\langle {1\bar{1}00} \right\rangle directions appear preferred. TEM images of (c + a) dislocations extended along the preferred directions are presented. It is demonstrated that two effects – temperature anomaly of σ _y (T) and dislocation self-blocking – have the common nature: a two-valley potential relief of the dislocation. A model of two-valley relief of the (c + a) dislocations in Mg is proposed.