Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In_xGa_(1-x)N_yAs_(1-y)

The In-N clusters form in the dilute nitride InxGa1-xNy As1-yalloys after annealing.It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum(CBM)of In GaA s,but also raises the N levels below the CBM of In GaA s,leading to the variation of the impurity-host interaction.The blueshift of the band gap energy is relative to the variation of the impurity-host interaction.In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters,a model is developed.It is found that the model can describe the blueshift of the band gap energy well.In addition,it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters.     

Dynamics of molybdenum nano structure formation on the TiO2(1 1 0) surface: A kinetic Monte Carlo approach

The rutile TiO₂(1 1 0) surface is a highly anisotropic surface exhibiting “channels” delimited by oxygen rows. In previous experimental and theoretical DFT works we could identify the molybdenum adsorption sites. They are located inside the channels. Moreover, experimental studies have shown that during subsequent annealing after deposition, special molybdenum nano structures can be formed, especially two monolayer high pyramidal chains of atoms.In order to better understand the dynamics of nano structure formation, we present a kinetic Monte Carlo study on diffusion and adsorption of molybdenum atoms on a TiO₂(1 1 0) surface. A quasi one-dimensional lattice gas model has been used which describes the possible adsorption sites of a Mo atom in a single channel of the surface. The atomic positions of a 1.5 monolayer thick Mo film formed of pyramidal chains define the lattice sites of the model. Thereby the formation of three-dimensional clusters could be studied. Here we have studied the cluster formation as a function of parameters that can be controlled in a growth experiment by physical vapor deposition: deposition and annealing temperature, flux and total amount of deposited Mo. Good qualitative agreement with recent experiments is obtained.     

Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle study

The electronic structures and effective masses of the N mono-doped and Al-N,Ga-N,In-N codoped ZnO system have been calculated by a first-principle method,and comparisons among different doping cases are made.According to the results,the impurity states in the codoping cases are more delocalised compared to the N mono-doping case,which means a better conductive behaviour can be obtained by codoping.Besides,compared to the Al-N and Ga-N codoping cases,the hole effective mass of In-N codoped system is much smaller,indicating the p-type conductivity can be more enhanced by In-N codoping.     

Role of oxygen and carbon on donor formation in step-annealed CZ-silicon

Step-annealing schedules for two different annealing chains, i.e. 450-650-450 and 650-450-700 °C have been followed to study the effect of oxygen and carbon on donor formation in carbon-rich Czochralski-silicon. It has been found that the annealing time does not have reasonable effect on substitutional carbon atoms. On the other hand, interstitial oxygen atoms are drastically reduced depending on annealing temperature. Carbon concentration does not exhibit any relationship with new donor (ND) concentration. The result suggests that the ND formation is not controlled by the substitutional carbon concentration directly, but by a density of some unknown embryos. The energy of formation of NDs was found to be 1.84 eV. All these results with plausible explanation are reported here.     

Characterization of heat-treated CN films fabricated by dual-facing-target sputtering for soft X-ray multilayer mirrors

The structural characterization of heat-treated CN films fabricated by dual-facing-target sputtering for soft X-ray multilayer mirrors was performed by means of X-ray diffraction (XRD), Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). The XRD analyses indicate a graphization process in the CN films during thermal annealing. The Raman analyses imply that the primary bonding in the CN films is sp². In other words, the formation of the sp³ bonding in the CN films can be suppressed effectively by doping with N atoms, and thus the thickness expansion resulting from the changes in the density of CN films during annealing can be decreased considerably. This result is also clarified by the increased conductivity measured. The XPS results give the information of the existence of the strong covalent bonding between N and C atoms, which can slow down the tendency of the structural relaxation during annealing. These results suggest that CN films suitable for soft X-ray multilayers used at high-temperature environments can be obtained by reactive dual-facing-target sputtering. With the low-angle X-ray diffraction measurements, we do observe the enhanced thermal stability of CoN/CN multilayers. Received: 2 October 1998 / Accepted: 21 April 1999 / Published online: 23 September 1999     

Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy

Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The nega- tively charge point defects （probably Pb centres or peroxy radicals） at the silicon nanocluster （nc-Si）/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and 0 atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.     

Ta/Ni/Ta multilayered ohmic contacts on n-type SiC

The interface formation, electrical properties and the surface morphology of multilayered Ta/Ni/Ta/SiC contacts were reported in this study. It was found that the conducting behavior of the contacts so fabricated is much dependent on the metal layer thickness and the subsequent annealing temperature. Auger electron spectroscopy (AES) and X-ray diffraction analyses revealed that Ni₂Si and TaC formed as a result of the annealing. The Ni atoms diffused downward to metal/SiC interface and converted into Ni₂Si layer in adjacent to the SiC substrate. The released carbon atoms reacted with Ta atoms to form TaC layer. Ohmic contacts with specific contact resistivity as low as 3 × 10⁻⁴ Ω cm² have been achieved after thermal annealing. The formation of carbon vacancies at the Ni₂Si/SiC interface, probably created by dissociation of SiC and formation of TaC during thermal annealing, should be responsible for the ohmic formation of the annealed Ta/Ni/Ta contacts. The addition of Ta into the Ni metallization scheme to n-SiC restricted the accumulation of carbon atoms left behind during Ni₂Si formation, improving the electrical and microstructure properties.     

Multiple free energies of activation of the chain oxygen atoms in the YBa2Cu3O7−δ

The desorption kinetics of the chain oxygen atoms in the YBa₂Cu₃O_7– (YBCO) superconductor were studied using isothermal vacuum annealing (VA). The number of the O(1) atoms per unit cell in the crystal was measured at three temperatures of 390, 415, and 450°C for various annealing times. From these measurements it was found that at high temperatures the loss of the O(1) atoms from the YBCO is very rapid, and so, low annealing temperatures must be used in order to see the fine details of the desorption phenomena. When the log of the instantaneous O(1) occupancy vs. time was plotted, three distinct linear segments were obtained for each temperature. This, I think is an indication of the existence of multiple desorption processes. From the slopes of these lines, I have evaluated three free energies of activation to be 1.14(6), 1.45(3), and 1.91(13) eV. These results are explained in terms of oxygen ordering in the chains.     

Theoretical analysis of impurity precipitation in nanopores in crystals. II: Kinetics of impurity cluster growth in pores

The kinetics of the formation of impurity clusters in subsurface nanopores in crystals is studied theoretically. A physical model of precipitation of the impurity phase in nanopores in a sample with sinks of various types is developed. This model forms the basis for the calculation of the annealing kinetics of copper containing subsurface pores and cobalt impurity atoms. The optimal annealing conditions are determined in which cobalt atoms diffuse predominantly into pores and form impurity clusters in them.     

Formation of p-type ZnMgO thin films by In-N codoping method

In-N codoped ZnMgO films have been prepared on glass substrates by direct current reactive magnetron sputtering. The p-type conduction could be obtained in ZnMgO films by adjusting the N₂O partial pressures. The lowest resistivity was found to be 4.6 Ω cm for the p-type ZnMgO film deposited under an optimized N₂O partial pressure of 2.3 mTorr, with a Hall mobility of 1.4 cm²/V s and a hole concentration of 9.6 × 10¹⁷ cm⁻³ at room temperature. The films were of good crystal quality with a high c-axis orientation of wurtzite ZnO structure. The presence of In-N bonds was identified by X-ray photoelectron spectroscopy, which may enhance the nitrogen incorporation and respond for the realization of good p-type behavior in In-N codoped ZnMgO films. Furthermore, the ZnMgO-based p-n homojunction was fabricated by deposition of an In-doped n-type ZnMgO layer on an In-N codoped p-type ZnMgO layer. The p-n homostructural diode exhibits electrical rectification behavior of a typical p-n junction.     

LEED crystallographic investigation of ultrathin films formed by deposition of Sn on the Pt(111) surface

Deposition of Sn on the Pt(111) surface followed by annealing at 1000 K leads to the formation of ordered phases showing (2 × 2 and ( LEED patterns, depending on the surface coverage of Sn. Both these phases were studied by LEED dynamical analysis. The best agreement between experimental and calculated I–V curves was obtained by means of models based on the formation of mixed Pt-Sn layers on the surface where Pt and Sn atoms are nearly coplanar with a slight upward buckling of Sn atoms. The structures of these phases are similar to those already observed for the Pt₃Sn(111) surface.     

Plasmachemical synthesis and basic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript> magnetic nanoparticles

Cobalt-ferrite (CoFe₂O₄) nanoparticles (CFNPs) are obtained using direct plasmachemical synthesis in the plasma of a low-pressure arc discharge. The formation of the CFNPs with an average size of 9 nm and a narrow granulometric composition is established employing the methods of X-ray structure analysis and transmission microscopy. The CFNP behavior upon high-temperature annealing is analyzed. The CFNP functional groups are determined using the infrared Fourier spectrum. The results of the X-ray energy dispersion confirm the correspondence of the ratio of the number of atoms of each material to the nominal stoichiometry. The basic magnetic properties of the obtained and annealed samples are investigated at room temperature using the vibrating spectrum magnetometry (VSM).     

In-N共掺杂ZnO第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法计算了纤锌矿ZnO,N掺杂和In-N共掺杂ZnO晶体的电子结构,分析了N掺杂和In-N共掺杂ZnO晶体的能带结构、电子态密度、差分电荷分布以及H原子对In-N共掺杂ZnO的影响.计算结果表明：N掺杂ZnO在能隙中引入了深受主能级,载流子(空穴)局域于价带顶附近.而加入激活施主In的In-N共掺杂ZnO,受主能级向低能方向移动,形成了浅受主能级.同时,受主能级带变宽、非局域化特征明显、提高了掺杂浓度和系统的稳定性.文章的结论与实验结果相符,从而为实 关键词： 密度泛函理论(DFT) 第一性原理 N掺杂ZnO In-N共掺杂ZnO     

Mössbauer effect study of charge and spin transfer in Fe-Cr

The influence of temperature and time of annealing on hyperfine fields and isomer shifts has been studied for a range of Fe–Cr alloys containing 1–45 at% Cr. It has been revealed that up to 15at% Cr neither time nor temperature of annealing practically does affect the hyperfine parameters. For more concentrated samples, however, both temperature and time of annealing are important. In particular, the Mössbauer spectrum of Fe–45.5 at% Cr annealed at 700°C for 5 h was a single-line indicating that the sample was paramagnetic. The observed changes of the hyperfine fields and the isomer shifts have been interpreted in terms of a spin and charge trasfer, respectively.Strong linear correlations between the following quantities have been revealed: the hyperfine field H(0,0) and the isomer shift IS(0,0); the average hyperfine field $\text{H}$ and the average isomer shift $\text{IS}$; the average hyperfine field $\text{H}$ and the average number of Cr atoms in the first two coordination spheres, $\text{N}$. It has been calculated from the first two correlations that a) a change of polarization of itinerant s-like electrons of one electron is equivalent to a change of the hyperfine field of 1602 kOe, and b) on average, a unit change of s-like electron polarization is equivalent to 3277 kOe. The two constant are very close to theoretical estimations, which can be found in literature. Correlation between the hyperfine field and the isomer shift led to a conclusion that the substitution of Fe atoms by Cr ones decreases the density of spin-up electrons on average by 0.026 electrons per one Cr atom in a unit cell. These electrons are most likely trapped by Cr atoms, because the hyperfine field at neighbouring Fe nuclei decreases and the density of charge at those nuclei increases at the rate of 0.029 electrons per one Cr atom in a unit cell.Based on the results obtained, a formula describing the dependence of the average hyperfine field on Cr contents and on the heat treatment has been postulated for Fe–Cr alloys.     

Fabrication of L10 FePtAg nanoparticles and a study of the effect of Ag during the annealing process

L1₀ ferromagnetic phase FePt nanoparticles containing Ag atoms (FePtAg) were synthesized by means of a liquid phase process, followed by annealing. The addition of Ag to FePt nanoparticles permits annealing to be conducted at a lower temperature (350 °C). This is further accompanied by a subsequent transformation in the crystal phase from the FCC superparamagnetic phase to the FCT (L1₀) ferromagnetic phase. The effects of annealing temperature and the Ag atoms inside the nanoparticles on the magnetic properties of the FePt nanoparticles have been studied. Using electron spectroscopy for the chemical analysis (ESCA), Ag atoms in the L1₀ phase FePtAg nanoparticles were found to be localized on the surface region of the annealed nanoparticles. The Ag atoms function to inhibit the oxidation of FePt, causing the particles to become more stable and to have ferromagnetic properties.     

离子束增强沉积制备p型氧化锌薄膜及其机理研究

采用离子束增强沉积方法在Si和SiO₂/Si衬底上制备In-N共掺杂ZnO薄膜(INZO)，溅射靶是用ZnO和2 atm% In₂O₃粉体均匀混合并压制而成，在氩离子溅射ZnO靶的同时，氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向，并且为p型导电，电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火，对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析. 关键词： 氧化锌薄膜 p型掺杂 离子束增强沉积     

高速率沉积磁控溅射技术制备Ge点的退火生长研究

采用磁控溅射技术在Si衬底上以350?C沉积14 nm的非晶Ge薄膜,通过退火改变系统生长热能,实现了低维Ge/Si点的生长.利用原子力显微镜(AFM)和拉曼(Raman)光谱所获得的形貌和声子振动信息,对Ge点的形成机理和演变规律进行了研究.实验结果表明:在675?C退火30 min后,非晶Ge薄膜转变为密度高达8.5×109cm-2的Ge点.通过Ostwald熟化理论、表面扩散模型和对激活能的计算,很好地解释了退火过程中,Ge原子在Si表面迁移、最终形成纳米点的行为.研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法,可为自组织量子点生长实验提供一定的理论支撑.     

Structural and Magnetic Properties of Sm Implanted GaN

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering tem- perature above room temperature in all the implanted samples, while the effective magnetic moment per Sin obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94（2005）037205, Phys. Rev. B 72（2005）245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.     

Interaction of atomic hydrogen with the Si(100)2×1 surface

The interaction of atomic hydrogen with the Si(100)2×1 surface has been investigated in detail by a field ion-scanning tunneling microscope (FI-STM). At low exposure, hydrogen atoms reside singly on top of the dimerised Si atoms, and are imaged brightly. The hydrogen chemisorption induces the buckling of dimers, indicating the strong bonding between Si and hydrogen atoms. The adsorption geometry changed from the (2×1) monohydride phase to the (1×1) dihydride phase with increasing exposure of hydrogen. The former is imaged dark compared with the unreacted Si dimers due to the reduction of the density of electronic states near the Fermi level. Surface etching was also observed during the formation of the dihydride phase. The behavior of hydrogen desorption from the H-saturated Si(100) surface was investigated as a function of annealing temperatures. Our STM results suggest that the desorbing H₂ molecules are formed by two hydrogen atoms on the same dihydride species.     

Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon

Abstract

Hydrostatic pressure has been used as a variable to investigate the E_c-0.164 eV acceptor level for the oxygen-vacancy (O—V) defect in γ-ray irradiated Si, and the annealing/formation of oxygen-related defects in neutron-irradiated Si. The acceptor level is found by deep level transient spectroscopy to move closer to the conduction band and away from the valence band at rates of 3.9 meV/kbar and 2.4 meV/kbar, respectively, i.e., the level moves higher in the gap. There is also a relatively large inward (outward) breathing mode lattice relaxation (4.6±1.2 ų/electron) accompanying electron emission (capture) from this level. Both results reflect the antibonding nature of the level and are qualitatively consistent with the Watkins—Corbett model for the O—V defect. The annealing rate was found by infrared absorption to increase with pressure for the O—V defect at 350°C with a derived activation volume of ?4.5 ų/defect, where the negative sign implies inward relaxation (contraction) on annealing. Pressure has relatively little effect on annealing of the C—Si—O C(3) defect which is interstitial in nature, but strongly favors the formation of the dioxygen (2 oxygen atoms per vacancy, i.e., O₂—V) defect. The intensity of the O₂—V band after annealing at 20 kbar is 5 times higher than that following similar annealing at 0 kbar. Additionally, this intensity at 20 kbar is higher than that achievable by any isochronal or isothermal annealing steps at 0 kbar. These annealing/formation results are discussed qualitatively in terms of models for the various defects.