A contribution to the theory of the triple crystal diffractometer

The first part of the paper gives a general equation for triple-crystal arrangement with perfect crystals on the assumption that the third crystal is rotated. It is shown that in the case of perfect crystals the shape of the reflection curve is practically independent of the vertical divergence. The case of mosaic crystals is also solved and the possibility of rotation by other than the third crystal is considered. A method is proposed for investigating the imperfection of a crystal which is different from methods used up to now. The paper is supplemented by some experimental results.

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, . , . , , . , . .

     

Photo-luminescence and growth defects in ZnS: Cu monocrystals

The paper describes microscopic investigation into the spectral distribution of photo-luminescence and its polarization on hexagonal ZnS monocrystals in relation to the structural defects of such crystals. These observations, as well as birefringent observations, show that the values of the birefringence and the degree of polarization in different stripes of the same crystal are the same within the limits of observational errors.

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ZnS: Cu

ZnS . , , , .

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In conclusion the author would like to thank K. Pátek, L. Souková and M. Mokonová for providing the monocrystals and for fruitful discussions.     

Nano-structured oriented carbon films grown by PLD and CVD methods

PLD and CVD methods, plasma or bias assisted, have been used to prepare thin films of nano-clustered graphite. The experimental conditions (vz. deposition apparatus, substrate temperature, working pressure, inert sustaining gases, parent species, and applied voltage) have been changed with the final aim of obtaining small graphene particles with the basal planes oriented along the growth vector and perpendicular to the n-Si100 substrate. Pulsed laser ablation (Nd:YAG, 2nd harmonic: =532 nm, h=2.33 eV, =7 ns, =10 Hz, 7 J/cm²), assisted by an RF-plasma, of a pyrolytic graphite target gave good results for nano-structure formation, provided high substrate temperature and high inert gas pressure are maintained. CVD methods, in the presence of high substrate temperature and a DC bias, showed a good attitude to drive a longitudinal growth of graphene layers and nano-wires from a reactive gas flow of Argon/Hydrogen and Methane. The morphology of the films grown at different conditions have been characterised by scanning electron microscopy (SEM). Film quality and nano-particle dimensions have been estimated by Raman spectroscopy. PACS 81.07.-b; 81.15.-z; 78.30.-j; 68.37.-d     

НИЗКОЧАСТОТНЫЕ КОЛЕ БАНИЯ ПРЯМОУГОЛЬНЫХ ПЛАСТИНОК ADP

- — . , - NH₄H₂PO₄,- ADP. ; - .     

The choice of test functions in gauge quantum field theories

We discuss the problem of the choice of test functions in gauge quantum field theories. Analysis of explicitly soluble models suggests that the test function spaces which are suitable for local and covariant formulation of gauge theories are the Gelfand and Shilov spaces , +>1. We also discuss a possible generalization of the spectral condition.     

Light absorption by free semiconductor carriers in the presence of a laser wave

Within the framework of the conditions ; » ^–1 ( ^–1 is the mean time of momentum relaxation), the coefficient of absorption () of a weak electromagnetic wave by the free carriers of a polar semiconductor is calculated in the presence of a strong wave (of frequency ), for arbitrary values of and . Photon absorption by band electrons is due to these latter interacting with optical phonons (of frequency _o). The problem is solved by using an analogous approach to the theory of the linear Kubo reaction. The results are valid in the absence of electron heating, when a strong wave only influences the scattering probability. The appearance of a photostimulated tail of absorption is predicted for < _o, including the jump () for ( – _o + ) ₀T as well as peaks in the function () at the points _s=s (s=1, 2, 3,...). The value (₁) is determined by the formula for the absorption coefficient for one strong wave.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 105–109, July, 1981.The authors are grateful to É. M. Épshtein and Sh. M. Kogan for useful discussions.     

Magnetic relaxation spectrum of ferrites Mn x Fe3−x O4+γ

The initial permeability disaccommodation in ferritesMn _x Fe₃–xO₄₊ , 0·5x1, was studied in a temperature range around –200°C to +180°C. Four separate bands were found in the relaxation spectrum of these ferrites.

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Mn _x Fe_3–x O₄₊

Mn _x Fe_3–x O₄₊ , 0,5x1, –200°C +180°C. .

     

Über den Einfluss von Stickstopf auf die Exoelektronenemission von Germanium

Zusammenfassung Es wurde der Einfluß eines Bombardements mit Stickstoffionen vor der Erregung untersucht und gezeigt, daß die Stiekstoffatome eine große Rolle bei der Entstehung des Emissionsmaximums bei 150° spielen.

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, 150°C.

     

Characteristic parameters of recombination centres

The paper points to the possibility of describing the properties of recombination centres by means of the quantitiesc _p/c _n ande _n/e _p, in contrast to the existing method based mainly on the so-called energy position of recombination levels. The proposal is supported by a simple statistical analysis and by experimental material and has some advantages over the method used hitherto.

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c _p/c_n e _n/e_p , . .

     

Die Integralbeziehungen bei der stationären laminaren Strömung mit geschlossenen Stromlinien in annähernd kreisförmigen Gebieten

Zusammenfassung Für die statioäre lineare ebene Strömung mit geschlossenen Stromlinien bei einer großen Reynoldsschen Zahl in annähernd kreisförmigen Gebieten werden zwei Integralbeziehungen (5) und (9) abgeleitet. Nach der ersten von diesen ist das Integral der Reibungskraft entlang der Grenze des Strömungsgebiets direkt proportional der Länge dieser Grenze und der Größe der Rotation der Geschwindigkeit im Kern der Strömung. Aus der zweiten Beziehung geht hervor: Das Volumen der in der Zeiteinheit den Schnitt der Rezirkulationsgrenzschicht durchfließenden Flüssigkeit ist direkt proportional dem Integral entlang der Gebietsgrenze aus der Differenz der Quadrate der Strömungsgeschwindigkeit an der Grenze des Kerns und der Geschwindigkeit an der Gebietsgrenze und umgekehrt proportional der Größe der Geschwindigkeitsrotation im Kern und der Länge der Gebietsgrenze.

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(5) (9). . : , , .

     

МОДЕЛИРОВАНИЕ ЭЛЕКТ РОННО-ОПТИЧЕСКИХ СИС ТЕМ С ОСЕВОЙ СИММЕТРИЕЙ П РИ ПОМОЩИ СЕТИ СОПРОТИВЛЕНИЙ

The paper explains the theory of modelling electrostatic fields by a resistance network. The conditions, which the resistance network must satisfy, are derived and the question of modelling electrodes of different shapes is solved. The finished network and the results obtained on it when modelling a jet for a linear h-f accelerator of electrons are described. Particular attention is paid to the influence of a space charge, the modelling of which is an advantage of this method.

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1- , 1964., , .

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. .     

ПОЛЕ ПЕРЕМЕННОГО ДИП ОЛЯ В НЕОДНОРОДНОМ ПОЛУПРОСТРАНСТВЕ

, . , ₁, ₂. - .     

The Statistics of the Trajectory of a Certain Billiard in a Flat Two-Torus

We consider a billiard in the punctured torus obtained by removing a small disk of radius >0 from the flat torus ², with trajectory starting from the center of the puncture. In this case the phase space is given by the range of the velocity only. Let (), and respectively R(), denote the first exit time (length of the trajectory), and respectively the number of collisions with the side cushions when ² is being identified with [0,1)². We prove that the probability measures on [0, ) associated with the random variables and R are weakly convergent as 0⁺ and explicitly compute the densities of the limits. Research partially supported by ANSTI grant C6189/2000.     

Эффективностъ сцинт илляционных счетчик ов для быстрых нейтроно в

, ZnS(Ag) . ZnS(Ag) . Po-Be, Ra-Be Li(d, n), C(d, n), N(d, n), Be(d, n). -, Co⁶⁰, Cs¹³⁷ Ra, , -, Li(p, ). , .     

The basic equations of the dynamics of the continuous distribution of dislocations II. Interpretation of general theory

The basic equations of the dynamics of the continuous distribution of dislocations analogical to Maxwell equations are derived in a series of papers [I, II, III]. The analogy of the elastic and electromagnetic fields is analyzed. In part [II] a physical interpretation is given of the tensors of stress and distortion and expressions are considered for the energy density of the elastic field of the dislocations. The basic equations are generalized for the case of a non-zero Poisson ratio and a finite body. A detailed interpretation is given of the tensor components of dislocation current density.

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II.

, . . , . . .

     

Mosaic Structure of (001)YBa2Cu3O7-δ/(10.2)Al2O3 Epitaxial Films and Millimeter Waveband Properties of Microstrip Resonators

The c-axis single-phase YBa₂Cu₃O_7- films ( = 0-0.15) on sapphire substrates prepared by the laser ablation technique and the band-pass stripline resonators for 34 GHz-range have been investigated. Increasing disorientation of mosaic block structure of YBa₂Cu₃O_7- films is related to increasing surface resistance R_s at 135 GHz-range and decreasing unloaded quality factor Q_o of linear stripline resonators. The linear dependence between the YBa₂Cu₃O_7- film mosaicity (M) and half-width B₁ of 00.13 reflecting component is determined. The reflection spreading is due to microstrains resulted mainly from the coherent adjustment of the YBa₂Cu₃O_7- film lattice to GdBa₂Cu₃O_7- sub-layer and sapphire substrate. Increasing number of the block characterized by a weak radial lattice adjustment () is demonstrated by spreading of 00.13 reflection. It is found out that depends on the Bragg angle of reflection due to inhomogenity of YBa₂Cu₃O_7- mosaic structure, which resulted from the gradual mosaicity decreasing with the depth.     

Electron microscope study of dislocations in slip bands of bent Fe-3·2% Si alloy single crystals

Dislocations in Fe-3·2% Si alloy single crystals deformed by bending are studied in this paper. The specimens were cut parallel to the slip plane into platelets, polished, and studied in places at various distances from the neutral plane with an electron microscope. A large number of jogs of various sizes was found on screw dislocations. Many loops are formed by the motion of dislocations with jogs and by the stopping of moving dislocations by obstacles. Some of them grow as a result of stress. The activity of sources on large jogs is stopped at an early stage by a cross slip. The formation and growth of loops increases the dislocation density and causes the growth of slip bands.

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Fe-3,2% Si

Fe-3,2% Si, , , . . , . . . .

     

The influence of successive asymmetrical magnetization reversal on the magnetic state of open samples

A study is made of the influence of successive asymmetrical magnetization reversal on the magnetic state of open samples, where the macroscopic demagnetization field has a significant effect during magnetization reversal and leads to a sort of rotation of the asymmetrical loops performed one after another. This effect is similar to reptation, which was studied experimentally by Nguyen van Dang [1–4] and theoretically explained by Néel [5, 6]. The quantitative expression of the rotation of asymmetrical loops in open samples as a function of the number of loops and amplitude of the disymmetry is similar to that with the reptation effect.

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, , . , . .

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In conclusion the authors thank Dr. L. Valenta, C. Sc., and Z. Málek, C. Sc., for valuable discussions.     

К В. Ч. НАГРЕВУ РАЗРЕЖЕННОЙ ПЛАЗМЫ

[2]. . , . , . . . .     

Refining of CdSb and preparation of CdSb single crystals by zone melting

CdSb single crystals were prepared by zone melting in a boat both with and without a seed crystal in a stream of pure hydrogen or in a sealed and evacuated tube. The zone moved with a velocity of 1–20 cm/hour. Zone melting in an evacuated tube was used to prepare CdSb single crystals of high purity containing 10¹⁵ acceptors/cm³ at room temperature. During zone refining the stoichiometry is damaged; the front part of the ingot is enriched by cadmium and the end of the ingot by antimony; the enrichment is of an order of several percent after 10 passages of the zone. In the middle part of the ingot the stoichiometric compound remains unchanged. CdSb single crystals grow even by directional cooling of the melt of the stoichiometric compound without a seed crystal.

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CdSb CdSb

CdSb 1–20 cm/, . CdSb CdSb , 10¹⁵ cm³ . ; , . . . CdSb .

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The author died 28. 5. 1961.