The electronic and magnetic properties of （Mn,C）-codoped ZnO diluted magnetic semiconductor

The electronic and magnetic properties of (Mn,C)-codoped ZnO are studied in the Perdew-Burke-Ernzerhof form of generalized gradient approximation of the density functional theory. By investigating five geometrical configurations, we find that Mn doped ZnO exhibits anti-ferromagnetic or spin-glass behaviour, and there are no carriers to mediate the long range ferromagnetic (FM) interaction without acceptor co-doping. We observe that the FM interaction for (Mn,C)-codoped ZnO is due to the hybridization between C 2p and Mn 3d states, which is strong enough to lead to hole-mediated ferromagnetism at room temperature. Meanwhile, we demonstrate that ZnO co-doped with Mn and C has a stable FM ground state and show that the (Mn,C)-codoped ZnO is FM semiconductor with super-high Curie temperature (T C = 5475 K). These results are conducive to the design of dilute magnetic semiconductors with codopants for spintronics applications.     

溶胶凝胶合成锰掺杂ZnO的室温磁性行为

通过溶胶凝胶自燃法合成锰掺杂氧化锌纳米晶体, 研究了Mn掺杂ZnO稀磁半导体(简称DMS)的性质．X射线衍射光谱表明,锰掺杂氧化锌保留纤锌矿型状氧化锌六角晶体结构．采用能量色散X射线能谱和扫描电子显微镜分别对成分和形态进行研究．温度依赖的电阻率显示了DMS的半导体材料行为．振动样品磁强计测定的室温磁性行为,揭示了锰掺杂氧化锌的铁磁性和反磁性特性.     

Raman Spectroscopy and Magnetic Properties of Mn-Doped ZnO Bulk Single Crystal

Mn doped ZnO bulk single crystals are grown by the modified Bridgman method. The as-grown crystals are red in eolour. The additional Raman mode observed at 524cm^-1 is attributed to the Mn ions incorporating into ZnO crystal. The crystal exhibited paramagnetie under lower applied field below 2280 Oe. Then diamagnetism is observed in the crystal when the magnetic field rises up and becomes dominant under applied field above 5270 Oe. The magnetic susceptibility dependence on the temperature follows a Curie law indicating a typical paramagnetie characteristic under an applied field of 2kOe. No ferromagnetic ordering is observed in the as-grown Mn-doped ZnO crystal.     

Mn和N共掺ZnO稀磁半导体薄膜的研究

使用对Zn₂N₃:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μ_B—0.61 μ_B.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好. 关键词： 磁性半导体 受主掺杂 空穴媒介的铁磁性     

Gd掺杂ZnO纳米线磁耦合性质的第一性原理研究

本文利用基于密度泛函理论的第一性原理方法计算了钆(Gd)掺杂氧化锌(ZnO)纳米线的磁耦合特性. 讨论了两个Gd原子替换ZnO纳米线中不同位置Zn原子的各种可能情况. 计算发现, ZnO中掺杂的Gd原子处于相邻的位置时它们之间的相互作用是铁磁性的, 并且体系的铁磁性可以通过注入合适数目的电子来得到加强. 同时发现Gd掺杂ZnO纳米线后s-f耦合作用变得显著, 使得体系的铁磁性变得更加稳定, 这也是Gd掺杂ZnO纳米线呈现铁磁性的原因. 这些结果为实验上发现的Gd掺杂ZnO纳米线呈铁磁性提供了理论依据.     

Phenomenological band structure model of magnetic coupling in semiconductors

A unified band structure model is proposed to explain the magnetic ordering in Mn-doped semiconductors. This model is based on the p-d and d-d level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. The model can also be used to explain the interesting behavior of GaMnN, which changes from ferromagnetic ordering to antiferromagnetic ordering as the Mn concentration increases. This model, therefore, is useful to provide a simple guideline for future band structure engineering of magnetic semiconductors.     

Structural and magnetic property of Mn:ZnO bulk ceramic doped with rare earth (Gd/Sm) atoms

This paper reports the paramagnetic behavior of Mn doped ZnO co-doped with rare earth (Gd and Sm) atoms. The formation of secondary rare earth oxides (Gd₂O₃ and Sm₂O₃) is confirmed from the X-ray diffraction patterns. The rare earth oxides in the system forbids the grain growth and interconnection between the grains. The weak link between the grains suppresses the long range exchange interaction between the Mn ions and hence, reduces the ferromagnetic ordering. Owing to the large mismatch between ionic radii of rare earth and transition metal atoms inside the matrix, the rare earth element cannot contribute to promote ferromagnetic behavior in Mn doped ZnO, irrespective of their high individual magnetic moments.     

First principles based design and experimental evidence for a ZnO-based ferromagnet at room temperature

The introduction of ferromagnetic order in ZnO results in a transparent piezoelectric ferromagnet and further expands its already wide range of applications into the emerging field of spintronics. Through an analysis of density functional calculations we determine the nature of magnetic interactions for transition metals doped ZnO and develop a physical picture based on hybridization, superexchange, and double exchange that captures chemical trends. We identify a crucial role of defects in the observed weak and preparation sensitive ferromagnetism in ZnO:Mn and ZnO:Co. We predict and explain co-doping of Li and Zn interstitials to both yield ferromagnetism in ZnO:Co, in contrast with earlier insights, and verify it experimentally.     

Ferromagnetism induced by oxygen-vacancy complex in (Mn,in) codoped ZnO

Mn doped Zinc oxide (ZnO) thin films were prepared by metal organic chemical vapor deposition (MOCVD) technique. Structural characterizations by X-ray diffraction technique (XRD) and photoluminescence (PL) indicate the crystal quality of ZnO films. PL and Raman show a large fraction of oxygen vacancies (V_O²⁺) are generated by vacuum annealed the film. The enhancement of ferromagnetism in post-annealed (Mn, In) codoped ZnO could result from V_O²⁺ incorporation. The effect of V_O²⁺ on the magnetic properties of (Mn, In) codoped ZnO has been studied by first-principles calculations. It is found that only In donor cannot induce ferromagnetism (FM) in Mn-doped ZnO. Besides, the presence of V_O²⁺ makes the Mn empty 3d-t_2g minority state broadened, and a t_2g-V_O²⁺ hybrid level at the conduction band minimum forms. The presence of V_O²⁺ can lead to strong ferromagnetic coupling with the nearest neighboring Mn cation by BMP model based on defects reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Mn 3d electrons trapped in oxygen vacancies.     

Observation of ferromagnetic ordering in Mn‐doped 8‐hydroxy‐quinoline aluminum

The ferromagnetic property of Mn‐doped 8‐hydroxy‐quinoline aluminum (Alq₃), synthesized by thermal co‐evaporation of pure Mn metals and Alq₃ powders, was investigated. The weak ferromagnetic property was observed in 5%‐doped Alq₃, with saturation magnetization of around 0.05μ_B/Mn. The doped Mn chemically interacted with O atoms, producing a new gap state at 0.34 eV above the highest occupied molecular orbital and reducing the effective electron concentration. This led to the decrease of the electron affinity and increase of the optical bandgap, resulting in the reduction of the hole‐injection barrier in comparison with the electron‐injection barrier to the Alq₃ layer. From these, the origin of the observed ferromagnetism is suggested. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defects induced ferromagnetism in Mn doped ZnO

Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 °C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other (～32±4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 μ_B/Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required.     

Carrier-mediated ferromagnetism in N co-doped (Zn, Mn)O-based diluted magnetic semiconductors

Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. In this Letter we report a theoretical study of (Zn, Mn)O system codoped with N, and show that this codoping can change the ground state from anti-ferromagnetic to ferromagnetic. We have carried out the first-principles electronic structure calculations and report total energy to estimate whether the ferromagnetic state was stable or not. Our approach is based on the spin-polarized relativistic Korringa–Kohn–Rostoker (SPR–KKR) density functional theoretical (DFT) method, within the coherent potential approximation (CPA). Self-consistent electronic structure calculations were performed within the local density approximation, using the Vosko–Wilk–Nusair parameterization of the exchange-correlation energy functional. Our results for energy difference between ferromagnetic sate and spin glass state as well as their dependence on concentrations were presented and discussed.     

First-principles prediction of the electronic and magnetic properties of nitrogen-doped ZnO nanosheets

The electronic and magnetic properties of N-doped ZnO nanosheets are investigated by density functional theory using local spin density approximation. The results show that in an isolated N-doped ZnO nanosheet, there is a clear spontaneous polarization of N 2p state with a magnetic moment 1.0 μ_B/N. We also find that the doped nitrogen atoms in ZnO nanosheets have a clustering tendency with ferromagnetic coupling between them, and thus a high room-temperature ferromagnetic nature is expected. The ferromagnetic coupling in N-doped ZnO nanosheets can be attributed to the hole-mediated double-exchange mechanism through strong p–d interaction between nitrogen and zinc atoms.     

Structural, compositional and magnetic characterization of bulk V2O5 doped ZnO system

This paper investigates the structural, compositional and magnetic properties of vanadium doped ZnO bulk samples prepared by solid state reaction technique. The Rietveld refinement analysis for XRD results of samples showed small change in lattice parameters for 3 and 5% vanadium doped ZnO samples indicating the substitution of Zn²⁺ ions by vanadium ions in ZnO lattice. Raman spectroscopy reveals the change in ZnO modes positions due to vanadium doping. The appearance of E₁ and E₂ modes showed that the wurtzite structure of ZnO is still maintained after doping of vanadium oxide. XPS analysis confirms the presence of the different elements and oxidation states of vanadium ions. M-H curves obtained from VSM showed weak ferromagnetism in the samples. The observation of ferromagnetic behavior indicates the formation of ZnVO phase with V²⁺ ion substitution in the ZnO lattice. XPS scans of the etched bulk samples confirmed the 2+ oxidation state of vanadium ions in our samples explaining the origin of ferromagnetism.     

First-principle study on magnetic properties of Mn/Fe codoped ZnS

We studied the magnetic properties of Mn/Fe codoped ZnS comparatively with and without defects using first-principle calculation. The calculated results indicate that the Mn/Fe codoped ZnS system tends to stabilize in a ferrimagnetic (FiM) configuration. To obtain a ferromagnetic (FM) configuration, we consider the doped system with defects, such as S or Zn vacancy. The calculated results indicate that the doped system with Zn vacancy favors FiM states. Although the FM states of the doped system with S vacancy are more stable than the FiM states in negative charge states, the FM states are not stable enough to exist. Finally, we replaced an S atom by a C atom in the doped system. The C atom prefers to substitute the S atom connecting Mn and Fe atoms. The formation energy of this defect is −0.40 eV, showing that Mn/Fe/C codoped ZnS can be fabricated easily by experiments. Furthermore, the FM state was lower in energy than the FiM state by 114 meV. Such a large energy difference between the FM and FiM states implies that room temperature ferromagnetism could be expected in such a system.     

Magnetic properties of nitrogen doped ZnO

Using the first principle method based on density functional theory,this paper studies the electronic structure and the ferromagnetic stability in N-doped ZnO.The calculated results based on local density approximation(LDA) and LDA+U method show that ferromagnetism coupling between N atoms is more energetically favourable for eight geometrically distinct configurations.The dominant ferromagnetic interaction is due to the hybridization between O 2p and N 2p.The origin of the ferromagnetic state in N doped ZnO is discussed by analysing coupling between N 2p levels.We also analyse N dopant concentration and lattice strain effect on ferromagnetism.     

Magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe from first-principles calculations

By means of the first-principles full potential linearized augmented plane-wave method within the local density approximation for the exchange-correlation functional, we have investigated the magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe. Total energy calculations show that, for high doping concentration (12.5%), ZnTe:Mn has an antiferromagnetic ground state while the ferromagnetic state is more favorable than the antiferromagnetic state for ZnTe:V. Furthermore, ZnTe with a low doping of Mn (6.25%) has a stable ferromagnetic ground state, which is in agreement with the experimental results. The calculated magnetic moment of ZnTe doped with Mn (V) mainly originates from transition metal Mn (V) atom with a little contribution from Te atom due to the hybridization between Mn (V) 3d and Te 5p electrons. Electronic structure indicates that Mn-doped ZnTe is a semiconductor, but V-doped ZnTe shows a half-metallic characteristic. We also discuss the difference between electronic and magnetic properties for ZnTe doped with 12.5% and 6.25% Mn.     

Mn掺杂ZnO纳米线磁性质的第一性原理研究

本文采用第一性原理方法系统研究了Mn原子单掺杂和双掺杂ZnO纳米线的稳定性和磁性质.所有掺杂纳米线的束缚能都为负值,表明掺杂增强了纳米线的稳定性.表面掺杂纳米线显示了直接带隙半导体特性,而中间掺杂纳米线显示了间接带隙半导体特性.纳米线的总磁矩主要来源于Mn原子3d轨道的贡献.由于杂化,相邻的O原子和Zn原子也产生了少量自旋.在超原胞内,Mn原子和O原子磁矩平行排列,表明它们之间是铁磁耦合.     

Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si （001） substrates by plasma enhanced chemical vapour deposition （PECVD）. X-ray diffraction measurements reveal that the Znl-xMn.O films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn^2＋ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device （SQUID） measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.     

Investigation of impurity phase formation for (ZnO)1−x(TMO)x bulk samples formed by ball milling

Structural, compositional, optical and magnetic properties have been studied for polycrystalline (ZnO)_0.90(TMO)_0.10 bulk samples, where TM (transition metal ions) = Mn, Fe, and Co. The quantitative Rietveld analysis showed relatively higher percentage of impurity (spinel and oxide) phases of about 33.76, 52.38 and 55.61% for Mn, Fe and Co doped ZnO samples, respectively. The de-convolution of XPS spectra indicated the presence of different phases. The appearance of shaking satellites in XPS spectra confirmed the presence of different valence states of dopant ions. The red shift in energy band gap, estimated from reflectance UV-vis spectroscopy, was observed for all TM doped bulk samples. For Mn doping, paramagnetic behavior was obtained while for Co and Fe, weak ferromagnetic behavior was observed at room temperature.