钛酸锶钡薄膜的室温光学性能研究

采用溶胶-凝胶法制备了(Ba0.75Sr0.25)TiO3薄膜,研究了不同退火温度下样品的物相结构、薄膜的光致发光性能和光学透过率。结果表明:室温下非晶钛酸锶钡薄膜在蓝光激发下具有明显的发光现象,发光波长范围是500～650 nm,峰值在525 nm附近。延长非晶态薄膜的退火时间能够显著提高样品的发光强度,且发光强度随薄膜厚度增加而增大。晶态薄膜有微弱的发光现象。透射谱测试结果表明,钛酸锶钡薄膜在可见光范围内具有良好的光学透过率。     

Effect of thickness on the structural,optical and electrical properties of thermally evaporated PbI2 thin films

This work describes the physical properties of lead iodide (PbI₂) thin films with different thicknesses that were deposited on ultrasonically cleaned glass substrates using a thermal evaporation technique at 5×10^-6 torr. The initial material was purified by the zone refining technique under an atmosphere of argon gas. XRD analysis of the material demonstrates that the thin films were preferably oriented along the (001) direction. The size of the crystallites was calculated from the Scherer relation and found to be in the range of ～5–10 nm, with higher values being observed for increasing film thicknesses. The optical energy band gaps were evaluated and determined to belong to direct transitions. Because the band gap increased with decreasing film thickness, a systematic blue shift was observed. The surface morphologies of PbI₂ films exhibited a clear increase in grain size with increasing film thickness. The photoluminescence and dc conductivity of the thin films are also discussed.     

Thickness dependent optical properties of titanium oxide thin films

TiO₂ thin films of different thickness were prepared by the Electron Beam Evaporation (EBE) method on crystal silicon. A variable angle spectroscopic ellipsometer (VASE) was used to determine the optical constants and thickness of the investigated films in the spectral range from 300 to 800 nm at incident angles of 60°, 70°, and 75°, respectively. The whole spectra have been fitted by Forouhi–Bloomer (FB) model, whose best-fit parameters reveal that both electron lifetime and band gap of TiO₂ thin film have positive correlation to the film thickness. The refractive indices of TiO₂ thin film increase monotonically with an increase in film thickness in the investigated spectral range. The refractive index spectra of TiO₂ thin films have maxima at around 320 nm and the maxima exhibit a marginally blue-shift from 327.9 to 310.0 nm with an increase in film thickness. The evolution of structural disorder in the TiO₂ thin film growth can be used to explain these phenomena.     

Fabrication and optical properties of SnS thin films by SILAR method

Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO₄ and Na₂S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown by using an organic source, xylene (C₈H₁₀), instead of methane (CH₄) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was increased gradually by changing the gas ratio of C₈H₁₀ to SiH₄. The film with high optical band gap was soft and polymer-like and intense photoluminescence were obtained. Room temperature electro-luminescence was also achieved with peak energy at 2.05 eV (600 nm) for the a-SiC:H film with optical band gap of 3.2 eV.     

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence(PL) peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.     

Structural and optical properties of ZnO thin films prepared by sol-gel method with different thickness

In this work, ZnO thin films with different thickness were prepared by sol-gel method on glass substrates and the structural and optical properties of these films were studied by X-ray diffractometer, atomic force microscope, UV-visible spectrophotometer, ellipsometer and fluorophotometer, respectively. The structural analyses show that all the samples have a wurtzite structure and are preferentially oriented along the c-axis perpendicular to the substrate surface. The growth process of highly c-axis oriented ZnO thin films derived from sol-gel method is a self-template process. With the increase of film thickness, the structural disorder decreases and the crystalline quality of the films is gradually improved. A transition of crystal growth mode from vertical growth to lateral growth is observed and the transition point is found between 270 and 360 nm thickness. The optical analyses show that with the increase of film thickness, both the refractive index and ultraviolet emission intensity are improved. However, the transmittance in the visible range is hardly influenced by the film thickness, and the averages are all above 80%.     

The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

CdSe thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological, optical and electrical properties of CdSe thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature with hexagonal structure and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The optical absorption studies revealed that the films are found to be a direct allowed transition. The energy bandgap values were changed from 1.93 to 1.87 eV depending on the film thickness. The electron effective mass (m_e^?/m_o), refractive index (n), optical static and high frequency dielectric constant (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the film thickness. The resistivity of the films changed between 10⁶ and 10² Ω-cm with increasing film thickness at room temperature.     

Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering

ZnO and Al-doped ZnO(ZAO) thin films have been prepared on glass substrates by direct current (dc) magnetron sputtering from 99.99% pure Zn metallic and ZnO:3 wt%Al₂O₃ ceramic targets, the effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. It shows that the surface morphologies of ZAO films exhibit difference from that of ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (0 0 2). The optical transmittance and photoluminescence (PL) spectra of both ZnO and ZAO films are obviously influenced by the substrate temperature. All films exhibit a transmittance higher than 86% in the visible region, while the optical transmittance of ZAO films is slightly smaller than that of ZnO films. More significantly, Al-doping leads to a larger optical band gap (E_g) of the films. It is found from the PL measurement that near-band-edge (NBE) emission and deep-level (DL) emission are observed in pure ZnO thin films. However, when Al was doped into thin films, the DL emission of the thin films is depressed. As the substrate temperature increases, the peak of NBE emission has a blueshift to region of higher photon energy, which shows a trend similar to the E_g in optical transmittance measurement.     

Structural changes in tin oxide thin film with laser exposure

The effects of laser irradiation on the surface, structure and optical properties of SnO thin films deposited on glass substrates using electron beam evaporation, are investigated. The thin film samples are irradiated using fundamental beam at 1064 nm from Q-switched Nd:YAG pulsed laser with different power densities. Structural morphology of the film is investigated using XRD patterns and AFM image. Both XRD pattern and AFM image show increase in grain size of the film with increasing laser power density. Other optical phenomena, photoluminescence emission, transmission, refractive index determination and optical band gaps calculations are also carried out at various laser power densities. Results from all these investigations reveal expansion in grain size of the crystalline SnO thin film with increasing laser power density.     

Oxygen deficiency effects on recombination lifetime and photoluminescence characteristics of ZnO thin films; correlation with crystal structure

The photoluminescence (PL), recombination lifetime (RL), and X-ray diffraction (XRD) spectra of the samples grown at various O₂ fractions of 0.290 (Zn-rich), 0.585 (moderate), and 0.836 (O-rich) over the total pressures in the growth chamber were investigated. XRD measurements revealed that all the films show highly preferred (0002) orientation. The PL measurements exhibit different dominant emissions in the ultraviolet (UV), violet and blue regions for Zn-rich, moderate and O-rich samples, respectively. Well-known green emission and high intensity of free exciton (FX) transition has been observed in Zn-rich sample after the sample is annealed at vacuum probably due to the oxygen deficiencies. Annealing the moderate sample gives rise to the UV emission at energy of 3.263 eV similar to the observed PL emission spectrum for the Zn-rich thin film. O-rich thin film exhibits a 338 meV acceptor level above the valance band maximum, most probably related to zinc vacancy (V_Zn). Free exciton RL measurements result in 568.23, 397.65, and 797.46 ps for Zn-rich, moderate, and O-rich thin films, respectively. A good correlation was found between crystallite size and the lifetime values.     

氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响

使用脉冲激光沉积(PLD)方法在石英(SiO2)和单晶Si(111)基底上制备了具有高c轴择优取向的ZnO薄膜。测试结果显示:在30～70sccm氧气流量范围内,氧气流量50sccm时制备的ZnO薄膜具有较好的结晶质量、较高的光学透过率(≥80%)、较高的氧含量(～40.71%)、较快的生长速率(～252nm/h)和较好的发光特性:450～580nm附近发射峰最弱,同时～378nm附近的紫外发光峰最强,表明薄膜材料中含有较少的氧空位等缺陷。     

纳米硅结构薄膜光致发光的温度依赖特性

综合考虑纳米硅结构薄膜的特殊性质,如量子限制效应、光学带隙和光跃迁振子强度对纳米硅粒径的依赖特性以及光学带隙和光辐射的温度依赖特性等,给出了一个解析表达式来分析具有一定粒径分布的纳米硅结构薄膜的光致发光(PL)强度分布,其中选取了两种纳米硅的粒径分布,即高斯分布和对数正态分布。结果表明,随着平均粒径和粒径分布偏差的减小,纳米硅薄膜的PL谱峰蓝移。随着环境温度的升高,纳米硅结构薄膜的PL谱峰红移且相对发光强度减弱。纳米硅结构薄膜光辐射拟合的结果与实验数据的比较分析表明,该模型能够很好地解释纳米硅结构薄膜在不同温度下的PL特性。     

Optical, electrical and morphological properties of p-type Mn-doped SnO2 nanostructured thin films prepared by sol–gel process

SnO₂ thin films doped with various manganese concentrations were prepared on glass substrates by sol–gel dip coating method. The decomposition procedure of compounds produced by alcoholysis reactions of tin and manganese chlorides was studied by thermogravimetric analysis (TGA). The effects of Mn doping on structural, morphological, electrical and optical properties of prepared films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall effect measurement, Fourier Transform Infrared (FTIR) spectral analysis, UV–Vis spectrophotometry, and photoluminescence (PL) spectroscopy. The results of the X-ray diffraction show that the samples are crystalline with a tetragonal rutile structure and the grain size decreases with increasing the doping concentration. The SEM and AFM images demonstrate that the surface morphology of the films was affected from the manganese incorporation. The Sn_1?x Mn _x O₂ thin films exhibited electrically p-type behavior in doping level above x=0.035 and electrical resistivity increases with increase in Mn doping. The optical transmission spectra show a shift in the position of absorption edge towards higher wavelength (lower energy). The optical constants (refractive index and extinction coefficient) and the film thickness were determined by spectral transmittance and using a numerical approximation method. The oscillator and dispersion energies were calculated using the Wemple–DiDomenico dispersion model. The estimated optical band gap is found to decrease with higher manganese doping. The room-temperature PL measurements illustrate the decrease in intensity of the emission lines when content of Mn is increased in Mn-doped SnO₂ thin films.     

氮流量在高氢氛围中对富硅氮化硅薄膜材料结构及其发光特性的影响

采用等离子体增强化学气相沉积技术,以N₂掺入到SiH₄和H₂的沉积方式,分别在玻璃和N型单晶硅片(100)衬底上制备富硅氮化硅薄膜。通过紫外-可见光吸收光谱、傅里叶变换红外吸收光谱(FTIR光谱)、拉曼光谱和光致发光谱(PL谱)分别表征掺氮硅薄膜材料的带隙、结构及其发光特性的变化。结果表明：在氢气的氛围中,随着氮气流量的增加,氢原子能够对薄膜缺陷起到抑制作用,并使较低的SiH₄/N₂流量比下呈现富硅态,但却不利于硅团簇的形成。随着氮原子的掺入,Si—N键的含量增大,带隙增大,薄膜内微结构的无序度也增大,薄膜出现了硅与氮缺陷相关的缺陷态发光;随着氮原子进一步增加,出现了带尾态发光,进一步讨论了发光与结构之间的关联。这些结果有助于采用PECVD制备富硅氮化硅对材料发光与结构特性的优化。     

Effect of deposition temperature on key optoelectronic properties of electrodeposited cuprous oxide thin films

The cuprous oxide (Cu₂O) thin films were electrodeposited with different reaction temperatures. The structural, morphological, optical, photoluminescence and photo response properties of the deposited films were analyzed. XRD analysis reveals cubic crystal structure for the deposited films with polycrystalline nature. The film deposited at room temperature possess high crystallite size of 37 nm. The surface morphology shows that by increasing the deposition temperature pyramid shaped morphology changes. Laser Raman study confirms the peaks 109, 148, 219, 415 and 635 cm^?1 conforms the Cu₂O phase formation. The band gap of the films are 2.02, 2.10 and 2.27 eV for the RT, 40 and 50 °C, respectively. The photoluminescence spectral analysis contains an emission peak at 618 nm confirm the formation of Cu₂O. The photo response study confirms the ohmic nature of the films. The film electrodeposited at room temperature showed good I–V curve at the illumination of 300 W cm^?2.     

Determination of optical properties in nanostructured thin films using the Swanepoel method

We present the methodological framework of the Swanepoel method for the spectrophotometric determination of optical properties in thin films using transmittance data. As an illustrative case study, we determined the refractive index, thickness, absorption index, and extinction coefficient of a nanostructured 3 mol% Y₂O₃-doped ZrO₂ (yttria stabilized zirconia, 3YSZ) thin film prepared by the sol-gel method and deposited by dipping onto a soda-lime glass substrate. In addition, using the absorption index obtained with the Swanepoel method, we calculated the optical band gap of the film. The refractive index was found to increase, then decrease, and finally stabilize with increasing wavelength of the radiation, while the absorption index and extinction coefficient decreased monotonically to zero. These trends are explained in terms of the location of the absorption bands. We also deduced that this 3YSZ thin film has a direct optical band gap of 4.6 eV. All these results compared well with those given in the literature for similar thin films. This suggests that the Swanepoel method has an important role to play in the optical characterization of ceramic thin films.     

脉冲激光沉积GaN薄膜的结构和光学特性研究

采用准分子脉冲激光,在Si(111)衬底上生长了带有AlN缓冲层的GaN薄膜, 利用X射线衍射(XRD)、原子力显微镜(AFM)和光致发光光谱(PL)等测试手段研究了不同沉积温度所生长的GaN薄膜结构特征和光学性能.研究表明:沉积温度影响GaN薄膜结构和光学性能,黄带发射峰主要与晶体缺陷有关.在400～700℃沉积范围内随着温度升高,GaN薄膜结构和光学性能提高.     

RETRACTED ARTICLE: Hydrogenated nanocrystalline silicon germanium thin films

Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction solar cell due to its higher optical absorption in the wavelength range of interest. In this paper, we present results of optical, structural investigations and electrical characterization of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HW-CVD) with a coil-shaped tungsten filament and with a disilane/germane/hydrogen gas mixture. The optical band gaps of a-SiGe:H and nc-SiGe:H thin-films, which are deposited with the same disilane/germane/hydrogen gas mixture ratio of 3.4 : 1.7 : 7, are about 1.58 eV and 2.1 eV, respectively. The nc-SiGe:H thin film exhibits a larger optical absorption coefficient of about 2–4 in the 600–900 nm range when compared to nc-Si:H thin film. Therefore, a thinner nc-SiGe:H layer of ∼500 nm thickness may be sufficient for the narrow bandgap absorber in an a-Si based multiple-junction solar cell. We enhanced the transport properties as measured by the photoconductivity frequency mixing technique. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by smallangle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.