Stress analysis, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

The residual stress instituted in Ni-Mn-Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni-Mn-Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 °C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm³ and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.     

Surface characteristics and nanoindentation study of Ni-Mn-Ga ferromagnetic shape memory sputtered thin films

In present paper, the off-stoichiometric Ni-Mn-Ga ferromagnetic shape memory alloy thin films are fabricated using radio frequency magnetron sputtering method. The compositions, microstructures and mechanical properties of the thin films are characterized by energy dispersive X-ray spectrum (EDAX), X-ray photoelectron spectroscopy (XPS), scanning electronic microscope (SEM), atomic force microscope (AFM) and nanoindentation test, respectively. The results show that there is a thinner layer of oxides consisting of NiO, Ga₂O₃ and an unspecified manganese oxidation (Mn_xO_y) at the surface, whereas a small amount of MnO precipitates exist in internal layers of post-annealed Ni-Mn-Ga thin films. The hardness and elastic modulus decrease with increasing film thickness. Nanoindentation tests reveal that the hardness and elastic modulus of the films can be up to 5.5 and 155 GPa, respectively. The Ni-Mn-Ga thin films have remarkably improved the ductility of Ni-Mn-Ga ferromagnetic shape memory alloys bulk materials.     

Laser beam interaction with Ni-Mn-Ga ferromagnetic shape memory alloys

Laser beam interaction with alloys belonging to the Ni-Mn-Ga ferromagnetic shape memory alloy group has been investigated in order to assess the possibilities to use laser radiation for processing these materials, as for machining, joining or surface modification. The brittleness of Ni-Mn-Ga alloys is, as expected, an important factor and the formation of cracks appears to be difficult to be avoided. The laser interaction leads to vaporization on the impact zone and the changes in the chemical composition have been analyzed with respect to the beam parameters for penetration and surface melting, respectively.     

Growth of Ni-Mn-Ga high-temperature shape memory alloy thin films by magnetron sputtering technique

Ni-Mn-Ga thin films have been fabricated by using magnetron sputtering technique under various substrate negative bias voltages. The effect of substrate negative bias voltage on the compositions and surface morphology of Ni-Mn-Ga thin films was systematically investigated by energy dispersive X-ray spectrum and atomic force microscopy, respectively. The results show that the Ni contents of the thin films increase with the increase of the substrate negative bias voltages, whereas the Mn contents and Ga contents decrease with the increase of substrate negative bias voltages. It was also found that the surface roughness and average particle size of the thin films remarkably decrease with the increase of substrate negative bias voltages. Based on the influence of bias voltages on film compositions, a Ni₅₆Mn₂₇Ga₁₇ thin film was obtained at the substrate negative bias voltage of 30 V. Further investigations indicate that the martensitic transformation start temperature of this film is up to 584 K, much higher than room temperature, and the film has a non-modulated tetragonal martensitic structure at room temperature. Transmission electron microscopy observations reveal that microstructure of the thin film exhibits an internally (1 1 1) type twinned substructure. The fabrication of Ni₅₆Mn₂₇Ga₁₇ high-temperature shape memory alloy thin film will contribute to the successful development of microactuators.     

The effect of magnetic stress and stiffness modulus on resonant characteristics of Ni-Mn-Ga ferromagnetic shape memory alloy actuators

The prospect of using ferromagnetic shape memory alloys (FSMAs) is promising for a resonant actuator that requires large strain output and a drive frequency below 1 kHz. In this investigation, three FSMA actuators, equipped with tetragonal off-stoichiometric Ni₂MnGa single crystals, were developed to study their frequency response and resonant characteristics. The first actuator, labeled as A1, was constructed with low-k bias springs and one Ni-Mn-Ga single crystal. The second actuator, labeled as A2, was constructed with high-k bias springs and one Ni-Mn-Ga crystal. The third actuator, labeled as A3, was constructed with high-k bias springs and two Ni-Mn-Ga crystals connected in parallel. The three actuators were magnetically driven over the frequency range of 10 Hz-1 kHz under 2 and 3.5 kOe magnetic-field amplitudes. The field amplitude of 2 kOe is insufficient to generate significant strain output from all three actuators; the maximum magnetic-field-induced strain (MFIS) at resonance is 2%. The resonant MFIS output improves to 5% under 3.5-kOe amplitude. The frequency responses of all three actuators show a strong effect of the spring k constant and the Ni-Mn-Ga modulus stiffness on the resonant frequencies. The resonant frequency of the Ni-Mn-Ga actuator was raised from 450 to 650 Hz by increasing bias spring k constant and/or the number of Ni-Mn-Ga crystals. The higher number of the Ni-Mn-Ga crystals not only increases the magnetic force output but also raises the total stiffness of the actuator resulting in a higher resonant frequency. The effective modulus of the Ni-Mn-Ga is calculated from the measured resonant frequencies using the mass-spring equation; the calculated modulus values for the three actuators fall in the range of 50-60 MPa. The calculated effective modulus appears to be close to the average modulus value between the low twinning modulus and high elastic modulus of the untwined Ni-Mn-Ga crystal.     

Microstructure and magnetic properties of Ni-rich Ni54Mn25.7Ga20.3 ferromagnetic shape memory alloy thin film

A Ni₅₄Mn_25.7Ga_20.3 ferromagnetic shape memory alloy thin film has been fabricated by using the RF magnetron-sputtering technique. The structure and magnetic properties of the film were systematically investigated. The results show that the film is in ferromagnetic martensite state at room temperature with the Curie temperature (T_c) of about 370 K. The saturation magnetization (M_s) of the film reaches 45 emu/g at 300 K, which is about 80% as large as that of Ni–Mn–Ga bulk material. The magnetization hysteresis loops significantly depend on temperatures. The residual magnetization (M_r) and the coercive force (H_c) increase with decreasing temperatures. The grains homogeneously distribute in the film. The microstructure of the film consists of martensite plates. The interface between the martensite variants is clear and straight, indicating a good mobility.     

Effect of Fe substitution on the phase stability and magnetic properties of Mn-rich Ni-Mn-Ga ferromagnetic shape memory alloys

The influence of Fe additions on the martensitic transformation and magnetic properties of Mn-rich Ni-Mn-Ga alloys was investigated by substituting either 1 at% Fe for each atomic species or by substituting Ni with varying amounts of Fe. The magnetic structure of the alloys was studied using ⁵⁷Fe Mössbauer spectroscopy. Mössbauer spectra revealed typical paramagnetic features in Mn-rich Ni-Mn-Ga-Fe alloys owing to the preferential site occupancy of Fe atoms at Ni sites. The evolution of the magnetic properties and phase stability has been correlated with the chemical and atomic ordering in these alloys.     

Intermartensitic transformation and magnetic field effect in NiMnInSb ferromagnetic shape memory alloys

Partially substituting Sb for In, we found an irreversible transformation of martensite to intermartensite at 90 K in Ni₅₀Mn₃₄In₁₂Sb₄ alloy during heating. The reverse transformation of martensite and intermartensite to the parent phase induced by a magnetic field has been investigated. The results indicate that, if a sufficiently high magnetic field is applied, the intermartensite state is no longer necessary as an intermediate state. Thus, a difference of the transformation originating from magnetic and from thermal energies has been found. In this competition, lattice distortions play an important role to promote the occurrence of the intermediate intermartensitic path.     

Magnetoresistance in ferromagnetic shape memory alloy NiMnFeGa

The magnetoresistance (MR){=[R(H)−R(0)]/R(0)} properties in ferromagnetic shape memory alloy of NiMnFeGa ribbons and single crystals, and NiFeGa ribbons have been investigated. It is found that the NiMnFeGa melt-spun ribbon exhibited GMR effect, arising from the spin-dependent scattering from magnetic inhomogeneities consisting of antiferromagnetically coupled Mn atoms in B2 structure. In the absence of these magnetic inhomogeneities, Heusler alloys seem to show a common linear MR behavior at around 0.8T_C, regardless of sample structures. This may be explained by the s-d model. At low temperatures, conventional AMR behaviors due to the spin-orbital coupling are observed. This is most likely due to the diminished MR from s-d model because of much less spin fluctuation, and is not associated with martensite phase. MR anomaly at intermediate field (ρ_⊥>ρ_||) is also observed in single crystal samples, which may be related to unique features of Heusler alloys.     

Transformation behaviors,structural and magnetic characteristics of Ni-Mn-Ga films on MgO （001）

Ferromagnetic Ni-Mn-Ga films were fabricated by depositing on MgO （001） substrates at temperatures from 673 K to 923 K. Microstructure, crystal structure, martensitic transformation behavior, and magnetic properties of the films were studied. With increasing deposition temperature, the surface morphology of the films transforms from granular to continu- ous. The martensitic transformation temperature is not dependent on deposition temperature; while transformation behavior is affected substantially by deposition temperature. X-ray analysis reveals that the film deposited at 873 K has a 7M marten- site phase, and its magnetization curve provides a typical step-increase, indicating the occurrence of magnetically induced reorientation （MIR）. In situ magnetic domain structure observation on the film deposited at 873 K reflects that the marten- sitic transformation could be divided into two periods： nucleation and growth, in the form of stripe domains. The MIR occurs at the temperature at which martensitic transformation starts, and the switching field increases with the decrease of temperature due to damped thermal activation. The magnetically induced martensitic transformation is related to the difference of magnetization between martensite and austenite. A shift of martensite temperature of dT/dH = 0.43 K/T is observed, consistent with the theoretical value, 0.41 K/T.     

Composition of the sputter deposited W-Ti thin films

Tungsten-titanium (W-Ti) thin film was deposited by dc Ar⁺ sputtering of W(70 at.%)-Ti(30 at.%) target. The thin film composition, determined by X-ray photoelectron spectroscopy (XPS) depth profiling, is W_(0.77±0.07)Ti_(0.08±0.03)O_(0.15±0.03). The presence of oxygen in the deposit is due to the rather poor vacuum conditions during the deposition, while significant deficiency of Ti, as compared to the sputtering target composition cannot be explained straightforwardly. Monte Carlo simulations of both, transport of sputtered particles from target to the substrate through the background gas (SRIM 2003 program) and thin film sputtering during the XPS depth profiling (program TRIDYN_FZR) are presented. The simulations show that the particle transport through the background gas is mainly responsible for the Ti depletion: the estimated composition of the thin film is W_0.61Ti_0.16O_0.23. Additional apparent Ti depletion occurs due to the preferential sputtering during the thin film composition analysis. The simulation of the sputtering process show that the surface concentration measured by XPS should be about W_0.74Ti_0.11O_0.15. The discrepancy between the estimated surface composition and the actual experimental result is in the range of the experimental error.     

Evolution of magnetic domain structure of martensite in Ni–Mn–Ga films under the interplay of the temperature and magnetic field

Ferromagnetic shape memory Ni-Mn-Ga films with 7M modulated structure were prepared on MgO （001） substrates by magnetron sputtering. Magnetization process with a typical two-hysteresis loop indicates the occurrence of the reversible magnetic field-induced reorientation. Magnetic domain structure and twin structure of the film were controlled by the in- terplay of the magnetic and temperature field. With cooling under an out-of-plane magnetic field, the evolution of magnetic domain structure reveals that martensitic transformation could be divided into two periods： nucleation and growth. With an in-plane magnetic field applied to a thermomagnetic-treated film, the evolution of magnetic domain structure gives evidence of a reorientation of twin variants of martensite. A microstructural model is described to define the twin structure and to produce the magnetic domain structure at the beginning of martensitic transformation; based on this model, the relationship between the twin structure and the magnetic domain structure for the treated film under an in-plane field is also described.     

近距离升华沉积CdTe掺Cd薄膜的微结构和电学、光学特性

采用近距离升华技术制备了掺杂Cd元素的CdTe多晶薄膜.利用X射线衍射仪和扫描电子显微镜表征其微结构,用霍尔效应测试仪和紫外可见分光光度计分析其电学、光学特性.结果显示,适量的掺杂Cd元素可改善CdTe薄膜晶形,显著提高薄膜的电导特性,由弱的p型电导转变为导电性能良好的n型电导,但对光能隙影响不大. 关键词： 近距离升华 CdTe薄膜 掺杂Cd 电学和光学特性     

Magnetic and structural properties of non-stoichiometric Ni-Mn-Ga ferromagnetic shape memory alloys

Structural and magnetic transition temperatures of ferromagnetic shape memory alloys present a strong dependence on slight departures from the stoichiometry, as does the mobility of twin boundaries responsible for the large magnetic field induced strains. In this work we study four non stoichiometric Ni-Mn-Ga polycrystalline alloys with compositions of 43–52 at.% nickel, excess manganese and deficient in gallium, and a single crystal of composition Ni₅₂Mn₂₆Ga₂₂. Those compounds are of technical interest due to the observed large room temperature magnetic field induced strains. Calorimetric and magnetic measurements determined the martensitic transition and Curie temperatures of the alloys (A_S = 331 K and T_Curie = 366 K for 52 at.% nickel alloy). Nickel defective alloys present a martensitic transition region broader than excess nickel ones. Neutron powder diffraction analysis confirmed orthorhombic martensitic structures for nickel defective alloys, and tetragonal for excess nickel ones. In the 52 atomic % nickel alloys case the crystallographic structure of the martensitic phase was also obtained on a single crystal with the same composition, trained to get a single variant in agreement with determined in the powder sample.     

Theoretic 3-D study of the high-frequency magnetic moment dynamics in thin ferromagnetic films with in-plane uniaxial anisotropy by considering eddy-current generation

In the present paper, theoretic investigations of polarisation vector precession trajectories represented by a macro spin in ferromagnetic films with in-plane uniaxial anisotropy were realised. For this purpose, the Landau–Lifschitz–Gilbert differential equation (LLG) in combination with the Maxwell equations were solved for three dimensions by considering a linear progression of the magnetisation or polarisation with an external field. The frequency and time dependent polarisation trajectories illustrate how a magnetic moment precesses if effective damping and eddy-currents impacts its motion. For computation, typical parameter values like the saturation polarisation J_s=μ₀·M_s=1.4 T and in-plane uniaxial anisotropy μ₀·H_u=4.5 mT were employed. The main focus of simulation was on the variation of the effective damping parameter α_eff between 0.01 and 0.05 and ferromagnetic film thickness t_m between 200 nm and 1200 nm. The frequency-dependent calculations were carried out between 50 MHz and 6 GHz. The time-dependent simulations were done for a duration between 5 and 30 ns.     

低温时效处理对铁磁形状记忆合金Mn2NiGa的结构、相变和磁性能的影响

对在较低温度范围的时效处理铁磁形状记忆合金Mn₂NiGa的结构、相变和磁性进行了研究.研究发现,母相基体析出了细小的析出相,引起了晶格扭曲和畸变,导致了系统内产生了很大的内应力.在其浓度超过晶格的容忍度之后,提升了体系的马氏体相变温度,使母相在时效温度下转变成马氏体相,并在其中测量到高达900 Oe的矫顽力.由于这种马氏体相的逆相变温度大幅提高,外推获得其居里温度在530 K附近.细小析出相的粗化使内应力消失,样品又回到母相状态.观察到细小析出相粗化的两个阈值温度,分别为423 K和 关键词： 铁磁形状记忆合金 2NiGa')" href="#">Mn₂NiGa 时效处理 内应力     

Microstructure and microwave permeability of FeCo thin films with Co underlayer

Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe₆₀Co₄₀ films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.     

铁磁形状记忆合金Mn2NiGa中应力诱发马氏体相的结构和磁性

采用金刚石对顶砧高压装置（DAC）和同步辐射X射线光源法,对Heusler类型的磁性形状记忆合金Mn₂NiGa的结构进行了原位高压X射线衍射测量,并对卸载后的受压样品进行了磁测量.实验观察到材料在室温下分别在0.77 GPa和20 GPa压力下发生了两次不可逆结构相变：马氏体相变和两种不同马氏体间的等结构相变.同时加压使马氏体结构中产生了大量的缺陷,造成了严重的晶格畸变,致使马氏体结构的矫顽力提高了近10倍,达到204 kA/m.结果发现,加压处理造成样品马氏体相饱和磁化强度的大幅度 关键词： 铁磁形状记忆合金 2NiGa')" href="#">Mn₂NiGa 高压 同步辐射     

Ni-Zn铁氧体薄膜的结构和磁性

采用交替溅射方法制备了Ni_Zn铁氧体薄膜，并研究了薄膜成分和制 备条件例如热处理温度、氧分压、膜厚、衬底层等因素对Ni_Zn铁氧体薄膜的影响.实验表明沉积态薄膜为非晶态，经大气中不同温度热处理后得到了尖晶石结构，其主峰为(311)峰 .另外，通过不同条件对Ni_Zn铁氧体薄膜的研究，找到了合适的Ni_Zn铁氧体薄膜的制备条件. 关键词： 薄膜 Ni_Zn铁氧体 交替溅射     

通过Ta，Al的添加改进纳米晶FeXN薄膜的结构和磁性

在本次工作中，制备了纳米晶FeAlN和FeTaN薄膜。虽然两种膜都展示了软磁性，但是观察到了不同的单轴各向异性。微结构的测量揭示了Ta的添加导致了N的更高溶解度，并且导致了更大的晶格膨胀和更大的压缩应力。单轴各向异性来源于N原子在a－Fe点阵中的各向异性分布。Al更容易与N发生反应，所以FeAlN膜中的a－Fe比FeTaN中的要纯，并且其应力是张应力。两种薄膜不同的各向异性可以由它们不同的微结构来解释。