Origin of magnetization-induced anisotropy of magnetic films

It is proposed that the magnetization-induced anisotropy of magnetic films of cubic crystal structure originates from the anisotropy of atomic pair ordering, shape anisotropy, and strain anisotropy resulting from the constraint of the magnetostriction strain imposed on the film by the substratc. Calculated are the three anisotropy constants and their sum K vs temperature for Ni, Fe, and 55%Ni-Fe films; the room temperature （RT） constants vs the substrate temperature Tt during deposition or annealing after deposition for Ni and 50%Ni Co films; the RT constants vs com- position fraction for Fe-Ni films with Tt = RT, 250℃ and 450℃, Co Ni films at Tt = RT, 100℃ and 320℃, and Fe-Co films with Tt = RT and 300℃; the spread of RT K vs composition fraction for Fe Ni films; and RT △K/K vs composition fraction for Fe-Ni and Co Ni films, where △K denotes the variation of K of the film that is detached from its substrate. The calculated curves well accord with the measurements. The irrelevancy of K to the substrate material and the fast kinetics of the annealing in a field applied in the direction of the hard axis are explained reasonably.[第一段]     

Structural,electronic,and magnetic properties of transition-metal atom adsorbed two-dimensional GaAs nanosheet

By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal(TM) atoms(from Sc to Zn) adsorbed monolayer Ga As nanosheets(Ga As NSs) are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor(Sc,V,and Fe adsorption),a half-metal(Mn adsorption),or a metal(Co and Cu adsorption).Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.     

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented.The samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm.The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm~3 and 3.75 erg/cm~2,respectively.The magnetic dead layer(MDL) is about 0.23 nm in this system.Furthermore,strong capping layer thickness dependence is also observed.The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm.To maintain PMA,the metal layer could not be too thin or thick in these multilayers.The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.     

磁各向异性热电效应对自旋相关器件的影响

在纳米点接触热电效应的实验中检测到"T"形Ni线两端的温差电压在外磁场作用下有较大变化,确认了这是由Ni线的磁各向异性热电效应引起的,外磁场的作用总是在逆温度梯度的方向产生一个额外的电动势,它与磁场以及Ni线两端温度差之间有清晰的对应关系.实验结果提示,自旋相关效应器件的研究需要留意器件样品的磁性材料构形设计和测试方法,以避免混入额外的电磁信号,给实验结果带来误判.     

Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.     

Current induced domain wall motion in nanostripes with perpendicular magnetic anisotropy

We report micromagnetic modeling results of current induced domain wall (DW) motion in magnetic devices with perpendicular magnetic anisotropy by solving the Landau-Lifschitz-Gilbert equation including adiabatic and non-adiabatic terms. A nanostripe model system with dimensions of 500 nm (L)×25 nm (W)×5 nm (H) was selected for calculating the DW motion and its width, as a function of various parameters such as non-adiabatic contribution, anisotropy constant (K_u), saturation magnetization (M_s), and temperature (T). The DW velocity was found to increase when the values of K_u and T were increased and the M_s value decreased. In addition, a reduction of the domain wall width could be achieved by increasing K_u and lowering M_s values regardless of the non-adiabatic constant value.     

软x射线磁性圆二色吸收谱研究铁单晶薄膜的面内磁各向异性

利用软x射线磁性圆二色(XMCD)吸收谱测得Fe/MgO膜不同磁化方向的轨道磁矩和自旋磁矩.实 验表明，沿铁单晶薄膜的不同方向，铁原子轨道磁矩的改变量达到600%以上，而自旋磁矩的 变化约50%，但原子的总磁矩没有如此大的改变.结合常规方法分析了铁薄膜的宏观磁各向异 性性质，半定量地获得磁矩与宏观各向异性能的关系，并对样品的磁矩和磁各向异性能进行 了比较. 关键词： x射线磁性圆二色 磁各向异性 磁性薄膜     

CoFeB/Pt多层膜的垂直磁各向异性研究

具有垂直磁各向异性的磁性纳米结构是自旋转移力矩器件的重要研究内容, 本文采用反常霍尔效应系统地研究了磁控溅射法制备的[CoFeB/Pt]_n多层膜的垂直磁各向异性. 当CoFeB的厚度小于0.6 nm时, 可以在[CoFeB/Pt]_n多层膜中观察到清晰的垂直磁各向异性, 其垂直磁各向异性强烈依赖于CoFeB和Pt层厚度及多层膜周期数. 当多层膜周期数n ≥ 5时, 出现零剩磁现象. 另外, [CoFeB/Pt]_n多层膜的矫顽力均小于2 kA·m^-1, 有望作为垂直自由层的重要侯选材料应用于垂直磁纳米结构中.     

Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures

We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (V_g) exceeds a critical value, and it persists even after removing V_g. This is in contrast to the volatile VCMA effect and its linear dependence on V_g in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect.     

Interface perpendicular magnetic anisotropy in Fe/MgAl2O4 layered structures

The recently reported MgAl₂O₄ tunnel barrier for the magnetic tunnel junctions (MTJs) is considered to be an alternative to the conventional MgO barrier, since a large tunnel magnetoresistance (TMR) ratio was obtained for the MgAl₂O₄‐based MTJs. In this study, we demonstrated large perpendicular magnetic anisotropy (PMA) arising from the interfaces of Fe(001)/MgAl₂O₄ layered structures, which can be useful for developing perpendicularly magnetized MgAl₂O₄‐based MTJs. A PMA energy density of 0.4 MJ/m³ was achieved for an epitaxially grown 0.7 nm thick Fe/MgAl₂O₄(001). Interestingly, the interface PMA was also obtained for the Fe/non‐epitaxially grown MgAl₂O₄ structures, which indicates that the crystallographic structure of MgAl₂O₄ layer has no critical influence on the obtained PMA.

     

Dynamic susceptibility of thin films with perpendicular magnetic anisotropy

We investigate the spin dynamics related to the Gilbert damping constant in infinite continuous thin films with perpendicular magnetic anisotropy (PMA), based on numerical and analytic approaches. We obtain the dynamic susceptibility of the infinite continuous thin films with various PMA energies by using micromagnetic simulations with periodic boundary conditions. These results are compared with the analytic solution that we derived from the Landau–Lifshitz–Gilbert equation. Based on our numerical and analytic studies, we support the physical analysis for results in the experimental determination of the Gilbert damping constant for PMA materials.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

Effect of thermal process on magnetic anisotropy in FeCoB soft underlayer

Relationship between magnetic anisotropy field H_k and thermal processes during the preparation has been studied for FeCoB thin films. The FeCoB films deposited on the glass substrates by facing targets sputtering successfully showed strong magnetic anisotropy when the substrate was heated at the substrate temperature T_s above 100 °C. Additionally, the lattice spacing of FeCo(1 1 0) in the perpendicular direction was found to decrease depending on the substrate temperature T_s. Among various temperature histories, the heating processes with a phase of increasing T_s revealed the further improvement of H_k. Meanwhile, high H_k in the films disappears after the post-deposition annealing at the temperature above 400 °C.     

Tunable magnetic anisotropy of CoFe2O4 nanopillar arrays released from BiFeO3 matrix

We deposited epitaxial BiFeO₃–CoFe₂O₄ (BFO–CFO) self‐assembled thin films on (001) SrTiO₃ (STO) substrates. We find that a combined annealing and etching process could remove the BFO matrix, thereby resulting in free‐standing CFO nanopillar arrays. Scanning electron and atomic force microscopies showed well separated CFO nanopillars, which were very similar to the original CFO ones in the self‐assembled structure. Finally, comparison of the magnetic hysteresis loops before and after removal of the BFO matrix showed a significant decrease of the coercive field and a dramatic decrease in the strain dominated magnetic anisotropy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A novel method determining longitudinally induced magnetic anisotropy in amorphous and nanocrystalline soft materials

In ferromagnetic amorphous and nanocrystalline soft magnetic alloys the induced magnetic anisotropy plays a fundamental role in the hysteresis behavior but, due to the elongated shape, it can be measured only if K_U is perpendicular to the sample long axis. In order to measure the longitudinal induced anisotropy, an original method derived from known thin layers measurement techniques was used. Hysteresis loops shifted by perpendicular bias field were recorded for this purpose. Direct measurement of the longitudinal induced anisotropy in amorphous and nanocrystalline ribbons or wire without needing sample preparation is reported for the first time. Evidence of self-induced anisotropy is brought in a Fe–Co-based nanocrystalline alloy.     

Mo覆盖层对MgO/CoFeB/Mo结构磁各向异性的影响

研究了Mo覆盖层厚度对MgO/CoFeB结构磁各向异性的影响. 研究发现, 加平行磁场生长出来的MgO/CoFeB/Mo样品表现为面内各向异性, 并且随着CoFeB的厚度减小, 面内各向异性逐渐减弱; 在CoFeB厚度减小到1.1 nm时, 仍可以保持面内各向异性, 垂直方向的外加饱和场逐渐减少; 厚度在0.9 nm及以下的情况下, 面内各向异性消失. 改变Mo覆盖层厚度, 当t_Mo= 1.6 nm时, 垂直方向的饱和场最小. 当生长过程的磁场变为垂直磁场时, 不同厚度的Mo覆盖层对MgO/CoFeB 的磁各向异性影响不同. Mo厚度在1 nm及以下时MgO/CoFeB/Mo样品表现为面内各向异性, Mo覆盖层厚度在1.2和5 nm之间时样品出现了垂直磁各向异性; 并且垂直方向的矫顽力也发生了变化, Mo覆盖层厚度为1.4 nm时样品的磁滞损耗会大一些.     

Analytic theory of wall configuration and depinning mechanism in magnetic nanostructure with perpendicular magnetic anisotropy

We present an analytic theory of the domain wall depinning in magnetic nanostructure with perpendicular magnetic anisotropy. The variational principle reveals that the wall is bent in the form of a circular arc which intersects the structure boundaries perpendicularly. The radius is inversely proportional to the magnetic field. With increasing the field the radius shrinks, followed by depinning from the constriction when the arc is not geometrically allowed. The depinning field is proportional to the sine of the constriction angle and the inverse of the constriction width. The validity of the theory is confirmed by comparison with the micromagnetic simulation.     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

Multiferroic properties of NiS nanoplates grown within Na-4 mica

Nanoplates of NiS with thickness 0.6 nm were grown within the crystal channels of Na-4 mica. The thickness of the nanoplates is confirmed by atomic force microscopy. The nanocomposites exhibited multiferroic (both ferromagnetic and ferroelectric) behavior at room temperature. Ferromagnetism was adduced to an increase of surface defects as a result of the two-dimensional configuration of the sample. Ferroelectric behavior was explained as arising due to a small distortion in the crystal structure of NiS grown within the Na-4 mica channels. This was substantiated by the refined values of lattice constants as determined by profile matching of X-ray data by a computer program. A magnetodielectric effect was also observed in this nanocomposite with a change of 0.77% in the dielectric constant for a magnetic field of 0.6 T.     

引入纳米氧化层的CoFe/Pd双层膜结构中增强的垂直磁各向异性研究

制备了CoFe/Pd双层结构的界面处或CoFe层 内部引入纳米氧化层后的系列薄膜. 研究结果显示, 引入纳米氧化层后, 可以使薄膜的磁各向异性在退火后从面内转到垂直膜面方向. 并且对于在CoFe层内部引入纳米氧化层的这类样品, 其强烈的垂直磁性可以在相当宽的有效磁性层厚度范围内(1.2-2 nm)维持. 在保持垂直磁性的前提下, 这种特殊的双层膜结构中CoFe磁性层厚度比常规CoFe/Pd 多层膜中的CoFe层厚度至少多出1.4 nm. 本文的研究有助于制备出具有较高热稳定性的垂直磁性器件电极.