A Raman study of high-pressure phases of lead chalcogenides PbX (X=S,Se, Te)

Pressure-induced phase transitions of lead chalcogenides were studied by Raman spectroscopy. The number of Raman modes observed for the first high-pressure phases was found to be significantly less than expected from selection rules for the proposed GeS-type orthorhombic structure. The observations are consistent with the alternative assignment as CrB-type. In the case of PbS, the disappearance of the intermediate-phase Raman lines in the pressure range of 19–25 GPa, i.e., in the vicinity of the orthorhombic to CsCl-type phase transition, is accompanied by a strong increase in a structureless background. The Raman background is attributed to light scattering by charge carriers in the metallic CsCl-type phase.     

Photo-induced athermal phase transitions of HgX(X= S,Se,Te) by ab initio study

Ab initio calculations of lattice constants, lattice stabilities of HgX(X = S, Se, Te) at different electronic temperatures(T_e) have been performed within the density functional theory(DFT). We find that the lattice constants of HgX increase and the phonon frequencies reduce as T_e increases. Especially the transverse-acoustic(TA) phonon frequencies of HgX gradually become negative with the elevation of the electron temperature. That is to say ultrafast intense laser induces lattice instabilities of HgX and athermal melting appears for the increase of laser intensity. What is more, with the X atom number increasing, the critical electronic temperatures of HgX are decreased in sequence. This result would be helpful for understanding the athermal melting processes for femtosecond laser micromachining.     

H2X(X=O,S,Se,Te)分子的双光子激发

本文采用全相对论量子力学计算了H₂X (X=O, S, Se, Te) 分子的双光子过程, 并考虑相对论效应对双光子过程的影响. 结果表明, 各个不可约表示对称态下激发能有着明显的差异,它反应了双光子吸收过程中选择能级的特点. 同时, 采用非相对论的对称匹配簇/组态相互作用方法 (SAC-CI) 计算其分子的单光子激发, 并与之比较. 双光子跃迁概率要比单光子跃迁概率小2–5个数量级; 同一主族, 随着原子序数的增加, 相对论效应对分子体系的激发能量、跃迁概率、振子强度的大小都有显著地影响; 除此之外,每个分子遵守分子对称群的选择原则. 本文中, 分子H₂X (X=O, S, Se, Te) 的个别不可约表示对称态的跃迁矩分量和振子强度远远大于其他对称态下的跃迁矩分量和振子强度, 甚至大于单光子激发. 这不仅与分子的对称性有一定的关系, 而且应该是选择双光子跃迁能级的重要依据. 关键词： 全相对论量子力学 双光子激发 电偶极跃迁矩 振子强度     

Electronic properties of chalcopyrite CuAlX2(X=S,Se,Te) compounds

We present results of the band structure and density of states for the chalcopyrite compounds CuAlX₂ (X=S,Se,Te) using the state-of-the-art full potential linear augmented plane wave (FP-LAPW) method. Our calculations show that these compounds are direct band gap semiconductors. The energy gap decreases when S is replaced by Se and Se replaced by Te in agreement with the experimental data. The values of our calculated energy gaps are closer to the experimental data than the previous calculations. The electronic structure of the upper valence band is dominated by the Cu-d and X-p interactions. The existence of Cu-d states in the upper valence band has significant effect on the optical band gap.     

A first-principle study of the structural and lattice dynamical properties of CaX (X=S,Se, and Te)

We have studied structural, elastic, thermodynamic (Debye temperature and melting temperature), and lattice dynamical (phonon dispersion curves, heat capacity, and entropy) properties of CaX via ab initio calculations within the local density approximations. The results are compared with the available experimental and other theoretical data, and the agreement is, generally, quite good. We also predict the temperature and/or pressure-dependent behaviors of some mechanical, lattice dynamical, and thermodynamic properties for the same compounds.     

Resonance photoelectron spectroscopy of TiX2 (X = S, Se, Te) titanium dichalcogenides

The photoelectron valence band spectra of TiS₂, TiSe₂, and TiTe₂ dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS₂ and TiTe₂. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS₂, TiSe₂, and TiTe₂ compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS₂ is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe₂ is caused by occupation of the 3d band in Ti.     

Phase stability and temperature effect in ScX (X=S,Se and Te) compounds

Based on first-principles calculations, the structural stability and temperature effect in ScX (X=S, Se and Te) compounds are studied with three typical structures of B1 (NaCl-type), hcp (NiAs-type) and β-hcp (inverse Li₂O₂-type). Their dynamic stability has been verified using phonon mode analysis and molecular dynamics simulations. From the total energy calculations, we find that the most stable ground state structures are B1 for ScS, and hcp for ScSe and ScTe, respectively. Moreover, structural stabilities at finite temperature are studied with the combination of phonon dependent dynamics analysis and first-principles calculations, which reveals a phase transition from hcp to B1 in ScSe around 230 K and a phase transition from hcp to β-hcp in ScTe around 460 K, in accordance with experimental findings. The energy barrier and pathway along the phase transformation from hcp to β-hcp ScTe are also calculated and analyzed by the solid-state nudged elastic band method.     

(ZnX)_3(X=S、Se和Te)量子点配体效应的密度泛函理论研究

采用密度泛函理论研究了一系列含磷配体(OPH_3、OPH_2Me、OPHMe_2和OPMe_3)对量子点(ZnX)_3(X=S、Se、Te)结构和性质的影响.Zn原子与配体中的O原子生成新的Zn-O配位键,使量子点的结构、吸附能、电荷分布、吸收光谱和HOMO-LUMO轨道等性质随着配体中甲基数目逐渐增多发生规律性的改变.计算结果表明:有机配体三甲基氧膦(OPMe_3)是阻止小尺寸(ZnX)_3量子点聚集,保护此类量子点的较为有效的配体.     

Electronic properties of HfXY intermetallic compounds (X = Si, Ge; Y = S, Se, Te)

Muonium, with a positive muon as the nucleus is considered a light isotope of hydrogen displaying a close chemical analogy to this atom. It offers a unique opportunity to study the behaviour of hydrogen in diamond at very low concentrations. The mass difference, however, implies that dynamical effects will be distinct. The bond centred muonium (Mu _BC ) state in diamond is easily observed and there is a very good correlation between theoretical and experimental hyperfine parameters (Schneider et al., Phys. Rev. Lett. 71(4):557–560, 1993). Curiously, despite its predicted stability, the bond centred hydrogen state has not yet been observed in diamond. Following the discovery of hydrogen dopant states in certain wide band gap metal oxides, and the possibility of hydrogen related molecular dopants in diamond, the study of hydrogen in diamond is important. Although it is evident from its hyperfine parameters that Mu _BC is not a shallow donor, the question still arises as to where the Mu _BC state in diamond might lie in the band gap. Accordingly, measurements of the high temperature stability of Mu _BC have been performed in a search for its possible ionization. The results are consistent with such an ionization, as the disappearance of Mu _BC polarisation (setting in near 1000 K) is correlated with the slight increase in the population of the diamagnetic μ⁺ species.     

A first-principles study on the structural, elastic, vibrational, and thermodynamical properties of BaX (X=S, Se, and Te)

Ab-initio calculations based on norm-conserving pseudopotentials and density functional theory (DFT) have been performed to investigate the structural, elastic, thermodynamic, and lattice dynamical (phonon dispersion curves) properties of BaX in rock-salt (B1) and CsCl (B2) structures. The results support the experimental and theoretical data in the existing literature. Findings are also presented for the temperature-dependent behaviors of some thermodynamic properties such as entropy, heat capacity, internal energy, and free energy for the same compounds in the B1 phase.     

Magnetic susceptibility of mixed valence compounds

Magnetic susceptibility of mixed-valence compounds has been calculated as a function of pressure using Falicov-Kimball model wherein thef-s hybridisation has been taken into account. This model can very well explain the continuous as well as discontinuous transitions from ground states of integral to intermediate valence. Our results for magnetic susceptibility are in qualitative agreement with recent experimental results on some mixed-valence compounds.     

Phase transformation and elastic behavior of MgX (X=S, Se, Te) alkaline earth chalcogenides

Pressure induced structural aspects of NaCl-type (B1) to CsCl-type (B2) structure in alkaline earth chalcogenides (AECs) magnesium chalcogenides (MgX; X=S, Se, and Te) are presented. An effective interionic interaction potential (EIoIP) with long-range Coulomb interactions and the Hafemeister and Flygare type short-range overlap repulsion extending up to the second neighbor ions and the van der Waals (vdW) interaction is developed. The vdW coefficients are evaluated following the Slater-Kirkwood variational method, as both the ions are polarizable. The present calculations have revealed reasonably good agreement with the available experimental data on structural transition (B1-B2 structure), the phase transition pressures P_t of 167 (MgS), 170 (MgSe), and 176 (MgTe) GPa as well the elastic properties. The calculated values of the volume collapses [ΔV(P)/V(0)] are also closer to their observed data. Further, the variations of the second and third order elastic constants with pressure have followed a systematic trend, which are almost identical to those exhibited by the observed data measured for other semiconducting compounds with rocksalt (B1) type crystal structure. The Born and relative stability criteria is valid in Mg monochalcogenides.     

Electronic and mechanical properties of half-metallic half-Heusler compounds CoCrZ(Z=S,Se, and Te)

The electronic structures, magnetic properties, half-metallicity, and mechanical properties of half-Heulser compounds CoCrZ(Z = S, Se, and Te) were investigated using first-principles calculations within generalized gradient approximation based on the density function theory. The half-Heusler compounds show half-metallic properties with a half-metallic gap of 0.15 eV for CoCrS, 0.10 eV for CoCrSe, and 0.31 eV for CoCrTe at equilibrium lattice constant, respectively. The total magnetic moments are 3.00μB per formula unit, which agrees well with the Slater-Pauling rule. The half-metallicity,elastic constants, bulk modulus, shear modulus, Pough's ratio, Frantesvich ratio, Young's modulus, Poisson's ratio, and Debye temperature at equilibrium lattice constant and versus lattice constants are reported for the first time. The results indicate that the half-Heulser compounds CoCrZ(Z = S, Se, and Te) maintain the perfect half-metallic and mechanical stability within the lattice constants range of 5.18-5.43  for CoCrS, 5.09-5.61  for CoCrSe, and 5.17-6.42  for CoCrTe,respectively.     

Magnetic susceptibility in the edged topological disordered nanoscopic cylinder

The effects of edged topological disorder on magnetic susceptibility are investigated in a nanoscopic cylinder threaded by a magnetic flux. Persistent current versus even or odd number of electrons shows different signs in ordered and disordered cylinders and also in short or long ones. In addition, temperature-averaged susceptibility has only diamagnetic signs in strong regimes and it is associated with paramagnetic signs in ordered and weak disordered ones. Besides, in an edged topological disordered cylinder, the temperature-averaged susceptibility decreases by raising the temperature somewhat and then increasing initiates and finally at high temperature tends to zero as the ordered one.     

Magnetic susceptibility of (La,Ce) Al2 alloys

The low-field magnetic susceptibility of (La, Ce)Al₂ alloys with 1–20 at-% Ce was measured between 0.04 and 4 K. Up to 1.5 at-% Ce the impurity contribution to the susceptibility exhibits features which can be described in terms of a combined influence of the crystalline electric field and the Kondo effect. At very low temperatures the onset of interactions between the Ce impurities is indicated. The impurity coupling interactions determine the dependence on temperature and concentration of the more concentrated alloys. For the dilute alloys the impurity magnetization was determined from measurements of the susceptibility in magnetic fields up to 10 kOe. The magnetization as a function of temperature and field shows a typical anomaly which has been observed also in other Kondo systems.     

Magnetic susceptibility of heavy rare-earth sesquioxides

Measurement of magnetic susceptibility of the powder samples of heavy rare-earth (Tb, Dy, Ho, Er, Tm and Yb) sesquioxides have been reported in the temperature range 300 to 900 K. Curie-Weiss law behaviour has been observed for all samples. The Curie constant, the paramagnetic Curie temperature and the magneton number for magnetic ions in each material have also been evaluated.     

AlM(M=O,S,Se,Te,Po)势能函数和光谱研究

本文用B3LYP方法,相对论有效实势,其中铝原子用6-311 G(d,p)基组,其它用sddall基组分别对AlM(M=O,S,Se,Te,Po)分子进行了优化计算,得出了它们的平衡结构和双原子分子光谱常数.计算结果表明:它们的基态结构分别为AlO(2Σ),AlS(2Σ),AlSe(2Σ),AlPo(2Σ),其中AlO和AlS的计算数据与实验结果是一致的.氧簇元素原子与铝结合的中性双原子分子的平衡距离,随原子序数的增加而增长,离解能随原子序数的增加而减小,但它们都能形成稳定的双原子中性分子.它们的谐振频率随原子序数的增加而减小,它们的最低空轨道和最高占据轨道能量随原子序数的增加而略有增加,但变化不大.其能隙随原子序数的增加而略有增加.本文从理论上系统地研究了氧簇元素的原子(包括放射性较强,不太稳定的Po)与铝原子形成的中性双原子分子的光谱和分析势能函数.     

NiAs、PbO型FeX(X=S,Se,Te)结构的稳定性与电子特征

利用基于密度泛函理论的第一性原理方法,Ni As与Pb O型Fe X(X=S,Se,Te)结构的稳定性与电子特征得到了研究.计算结果显示Fe的内聚能与X-Fe元素之间的相互作用是影响Fe X结构稳定性的重要因素.当X原子半径较小、电负性较大时(X=S),Fe X趋向于形成Fe-X相互作用较强、密度较大的Ni As型结构;当X原子半径较大、电负性较小时(X=Se,Te),Fe X趋向于形成Fe-Fe相互作用较强、密度较小的Pb O型结构.此外,压强使得Pb O型Fe X结构的稳定性降低.当压强分别大于5、9 GPa时,Fe Te、Fe Se趋向于形成Ni As型结构.Pb O型Fe Se中Fe原子周围的电子密度随压强的增大而增大.     

Pressure-induced phase transitions in the ZrXY (X= Si,Ge, Sn;Y= S,Se, Te) family compounds

Pressure is an effective and clean way to modify the electronic structures of materials, cause structural phase transitions and even induce the emergence of superconductivity. Here, we predicted several new phases of the ZrXY family at high pressures using the crystal structures search method together with first-principle calculations. In particular, the ZrGeS compound undergoes an isosymmetric phase transition from P4/nmm-I to P4/nmm-II at approximately 82 GPa. Electronic band structures show that all the high-pressure phases are metallic. Among these new structures, P4/nmm-II ZrGeS and P4/mmm ZrGeSe can be quenched to ambient pressure with superconducting critical temperatures of approximately 8.1 K and 8.0 K, respectively. Our study provides a way to tune the structure, electronic properties, and superconducting behavior of topological materials through pressure.