High-temperature magnetic properties of noninteracting randomly oriented single-domain Fe3 − δO4 nanoparticles

Magnetic measurements have been performed on 40-nm sphere-like Fe_3 − δO₄ (δ=0.043) nanoparticles using a Quantum Design vibrating sample magnetometer. Coating Fe_3 − δO₄ nanoparticles with SiO₂ effectively eliminates magnetic interparticle interactions so that the coercive field HC in the high-temperature range between 300 K and the Curie temperature (855 K) can be well fitted by an expression for noninteracting randomly oriented single-domain particles. From the fitting parameters, the effective anisotropy constant K is found to be (1.38±0.11)×¹⁰⁵ erg/cm³, which is very close to the bulk magnetocrystalline anisotropy constant of 1.35×¹⁰⁵ erg/cm³. Moreover, the inferred mean particle diameter from the fitting parameters is in quantitative agreement with that determined from transmission electron microscope. Such a quantitative agreement between data and theory suggests that the ensemble of our SiO₂-coated sphere-like Fe_3 − δO₄ nanoparticles represents a good system of noninteracting randomly-oriented single-domain particles.     

Fabrication and magnetic properties of Fe3O4 nanowire arrays in different diameters

Fe₃O₄ nanowire arrays with different diameters of D=50, 100, 150 and 200 nm were prepared in anodic aluminum oxide (AAO) templates by an electrodeposition method followed by heat-treating processes. A vibrating sample magnetometer (VSM) and a Quantum Design SQUID MPMS magnetometer were used to investigate the magnetic properties. At room temperature the nanowire arrays change from superparamagnetism to ferromagnetism as the diameter increases from 50 to 200 nm. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurements show that the blocking temperature T_B increases with the diameter of nanowire. The ZFC curves of D=50 nm nanowire arrays under different applied fields (H) were measured and a power relationship between T_B and H were found. The temperature dependence of coercivity below T_B was also investigated. Mössbauer spectra and micromagnetic simulation were used to study the micro-magnetic structure of nanowire arrays and the static distribution of magnetic moments of D=200 nm nanowire arrays was investigated. The unique magnetic behaviors were interpreted by the competition of the demagnetization energy of quasi-one-dimensional nanostructures and the magnetocrystalline anisotropy energy of particles in nanowires.     

Probing the magnetic state by linear and non-linear ac magnetic susceptibility measurements in under-doped manganite Nd0.8Sr0.2MnO3

We have thoroughly investigated the entire magnetic states of under-doped ferromagnetic-insulating manganite Nd_0.8Sr_0.2MnO₃ through temperature-dependent linear and non-linear complex ac magnetic susceptibility measurements. This ferromagnetic-insulating manganite is found to have frequency-independent ferromagnetic to paramagnetic transition temperature at around 140 K. At around 90 K (≈T_?) the sample shows a second frequency-dependent re-entrant magnetic transition as explored through complex ac susceptibility measurements. Non-linear ac susceptibility measurements (higher harmonics of ac susceptibility) have also been performed (with and without the superposition of a dc magnetic field) to further investigate the origin of this frequency dependence (dynamic behavior at this re-entrant magnetic transition). Divergence of 3rd harmonic of ac susceptibility in the limit of zero exciting field indicates a spin-glass-like freezing phenomena. However, large value of spin-relaxation time (τ₀=10⁻⁸ s) and small value of coercivity (∼22 Oe) obtained at low temperature (below T_?) from critical slowing down model and dc magnetic measurements, respectively, are in contrast with what generally observed in a canonical spin glass (τ₀=10⁻¹²-10⁻¹⁴ s and very large value of coercivity below freezing temperature). We have attributed our observation to the formation of finite size ferromagnetic clusters which are formed as consequence of intrinsic phase separation and undergo cluster glass-like freezing below certain temperature in this under-doped manganite. The results are supported by the electronic- and magneto-transport data.     

Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method

Thin films of Zn_1−xMn_xO (x=0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol-gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray diffraction (XRD), atom force microscopy (AFM), photoluminescence (PL) and SQUID magnetometer (MPMS, Quantum Design). The XRD spectrum shows that all the films are single crystalline with (0 0 2) preferential orientation along c-axis, indicating there are not any secondary phases. The atomic force microscopy images show the surfaces morphologies change greatly with an increase in annealing temperature. PL spectra reveal that the films marginally shift the near band-edge (NBE) position due to stress. The magnetic measurements of the films using SQUID clearly indicate the room temperature ferromagnetic behavior, and the Curie temperature of the samples is above room temperature. X-ray photoelectron spectroscopy (XPS) patterns suggest that Mn²⁺ ions were successfully incorporated into the lattice position of Zn²⁺ ions in ZnO host. It is also found that the post-annealing treatment can affect the ferromagnetic behavior of the films effectively.     

Mutual Composite Fermion and Composite Boson approaches to balanced and imbalanced bi-layer quantum Hall system: An electronic analogy of the Helium 4 system

We use both Mutual Composite Fermion (MCF) and Composite Boson (CB) approach to study balanced and imbalanced Bi-layer Quantum Hall systems (BLQH) and make critical comparisons between the two approaches. We find the CB approach is superior to the MCF approach in studying ground states with different kinds of broken symmetries. In the phase representation of the CB theory, we first study the Excitonic superfluid (ESF) state. The theory puts spin and charge degree freedoms in the same footing, explicitly bring out the spin-charge connection and classify all the possible excitations in a systematic way. Then in the dual density representation of the CB theory, we study possible intermediate phases as the distance increases. We propose there are two critical distances d_c1 < d_c2 and three phases as the distance increases. When 0 < d < d_c1, the system is in the ESF state which breaks the internal U(1) symmetry, when d_c1 < d < d_c2, the system is in an pseudo-spin density wave (PSDW) state which breaks the translational symmetry, there is a first-order transition at d_c1 driven by the collapsing of magneto-roton minimum at a finite wavevector in the pseudo-spin channel. When d_c2 < d < ∞, the system becomes two weakly coupled ν = 1/2 Composite Fermion Fermi Liquid (FL) state. There is also a first-order transition at d = d_c2. We construct a quantum Ginzburg Landau action to describe the transition from ESF to PSDW which break the two completely different symmetries. By using the QGL action, we explicitly show that the PSDW takes a square lattice and analyze in detail the properties of the PSDW at zero and finite temperature. We also suggest that the correlated hopping of vacancies in the active and passive layers in the PSDW state leads to very large and temperature-dependent drag consistent with the experimental data. Then we study the effects of imbalance on both ESF and PSDW. In the ESF side, the system supports continuously changing fractional charges as the imbalance changes. In the PSDW side, there are two quantum phase transitions from the commensurate excitonic solid to an incommensurate excitonic solid and then to the excitonic superfluid state. We also comment on the effects of disorders and compare our results with the previous work. The very rich and interesting phases and phase transitions in the pseudo-spin channel in the BLQH is quite similar to those in ⁴He system with the distance playing the role of the pressure. A BLQH system in a periodic potential is also discussed. The Quantum Hall state to Wigner crystal transition in single layer Quantum Hall system is studied.     

Spectroscopic and magnetic susceptibility analyses of the FJ and D4 energy levels of Tb(4f) in TbAlO3

Detailed analyses of spectroscopic and temperature-dependent magnetic susceptibility data are reported for the crystal-field split energy levels of the ⁷F_J and ⁵D₄ of Tb³⁺ in stoichiometric single crystals of ortho-aluminate TbAlO₃. The spectroscopic data include absorption spectra obtained between 2940 and 480 nm from 8 to 300 K. High resolution fluorescence spectra are reported, representing transitions from ⁵D₄ to ⁷F_6,5,4, at a sample temperature of 85 K. Using crystal-field modeling techniques recently adapted for low symmetry systems, we have assigned all 58 experimental Stark levels within the ⁷F_J and ⁵D₄ manifolds, with a fitting standard deviation of 4.5 cm⁻¹ (3.8 cm⁻¹ rms error). As a further test, the theoretical Stark levels and calculated wavefunctions were used to determine the temperature dependence of the magnetic susceptibility along the c-axis of the TbAlO₃ crystal. Good agreement is obtained between the calculated susceptibility and temperature-dependent magnetic data reported earlier, including a prediction of a 0.2 cm⁻¹ splitting of the ground-state quasi-doublet. The susceptibility calculation also confirms the predicted ordering of states within the ⁷F₆ multiplet manifold.     

Magnetic properties for the Mn2GeTe4 compound

Measurements of magnetic susceptibility χ, in the temperature range from 2 to 300 K, and of magnetization M vs. applied magnetic field B, up to 5 T, at various temperatures were made on polycrystalline samples of the Mn₂GeTe₄ compound. It was found that Mn₂GeTe₄ has a Néel temperature T_N of about 135 K, shows mainly antiferromagnetic behavior with a very weak superimposed ferromagnetic component that is attributed to spin canting. Also, the magnetic results suggest that a possible spin-glass transition takes place at T_f≈45 K. The spin-glass order parameter q(T), determined from the susceptibility data, was found to be in agreement with the prediction of conventional spin-glass theory. The M vs. B results indicated that bound magnetic polarons (BMPs) occur in the compound, and that the effects from BMPs disappear at approximately 80 K. The M vs. B curves were well fitted by a Langevin type of equation, and the variation of the fitting parameters determined as a function of temperature. Using a simple spherical model, the radius of the BMP in the material was found to be about 27 Å; this value is similar to the effective Bohr radius for an acceptor in the II-IV-V₂ and I-III-VI₂ ternary semiconductor compounds.     

Synthesis, structural and magnetic properties of spin ladder compound Ca1−xCoxCu2O3

MCu₂O₃ (M=Ca and Co) system has two-leg spin ladder structure similar to that of the prototype SrCu₂O₃ system except that the rungs are buckled with an angle of 123° and 105° for CaCu₂O₃ and CoCu₂O₃ compounds, respectively. We have synthesized powder samples of (Ca_1−xCo_x)Cu₂O₃ (x=0.00-1.00) by the solid state reaction method and their structural and magnetic properties have been investigated. All the synthesized compounds crystallize in orthorhombic structure with space group Pmmn. Lattice parameters of (Ca_1−xCo_x)Cu₂O₃ decrease with the increase in Co content. DC magnetic susceptibility χ(T) results of the end products CaCu₂O₃ and CoCu₂O₃ show antiferromagnetic transition (T_N) at 27 and 215 K, respectively. Co doping into (Ca_1−xCo_x)Cu₂O₃ enhances its T_N systematically with increasing Co concentration. The χ(T) of CoCu₂O₃ shows a broad transition with the peak temperature around 215 K and it was found to be field independent up to 90 kOe. The ambiguity concerning the transition was ruled out by recording the temperature dependent X-ray diffraction pattern on CoCu₂O₃ system, which indicated that there is no structural transition in the investigated temperature range of 115-300 K. Further, specific heat measurement on CoCu₂O₃ confirms the magnetic phase transition by the appearance of a sharp peak at 215 K.     

Effect of annealing conditions on the magnetism of Ni-doped La0.4Sr0.6TiO3−δ powders

La_0.4Sr_0.6Ti_1−xNi_xO_3−δ powders with x=0 and 2% were synthesized by the sol-gel method and characterized by a variety of techniques. We mainly investigate the effect of annealing conditions on the structural and magnetic properties of La_0.4Sr_0.6Ti_1−xNi_xO_3−δ powders. X-ray diffraction and transmission electron microscopy studies indicate all samples annealed at high temperature (T>873 K) are single phase and no secondary magnetic phase in this study. By the commercial physical properties measurements system (PPMS), the sample with x=0 exhibits diamagnetic behavior, whereas all the samples with x=2% are found to be ferromagnetic even at room temperature. With the increase of annealing temperature, the ferromagnetism of the samples increases initially, and then it decreases after reaching the maximum value. The structural defects such as oxygen vacancies mediated mechanism is reasonable explanation of the magnetic properties in the present results.     

Improvement of frequency sensitivity of series photodetector frequency circuit system and its application for Cy5 fluorescence detection

This study elucidated the frequency characteristics of series photodetector frequency circuit system for detection of DNA probe ET996 marked with fluorescence dye Cy5. We developed 48 MHz series photodetector frequency circuit system with good sensitivity for fluorescence detection. In accordance with the theory of series photodetector frequency circuit system, the frequency sensitivity can be improved by adjusting circuit parameters such as A (tan θ), C_q, C₀, and C_p. In this research of A adjustment, the capacitance parameter C_m of 48 MHz series photodetector frequency circuit system was adjusted to improve the frequency sensitivity for detection of fluorescence dye concentration; moreover, the bias of photodetector was also adjusted to improve the frequency sensitivity. In the optimal conditions of capacitance match and photodetector bias, the detection limit of ET996-Cy5 fluorescence dye concentration 2 pmol/L can be measured by 48 MHz sensor system. The results of fluorescence experiment also demonstrated that the frequency shift of 48 MHz sensor system was linearly related to the logarithm of fluorescence dye concentration from 200 nmol/L to 2 pmol/L. The frequency method can be applied simply and the detection limit of ET996-Cy5 fluorescence dye concentration was lower than the conventional fluorescence technique by 2 orders.     

Low-frequency alternative-current magnetic susceptibility of amorphous and nanocrystalline Co60Fe20B20 films

This investigation experimentally studies the low-frequency alternating-current magnetic susceptibility (χ_ac) of amorphous and nanocrystalline CoFeB films by measuring the magnetic field established by passing currents of various frequencies through such films of various thicknesses (t_f). A CoFeB film is sputtered onto a glass substrate with t_f from 100 Å to 500 Å under the following conditions: (a) As-deposited films were maintained at room temperature (RT) and (b) films were post-annealed at T_A=150 °C for 1 h. The samples thus obtained are analyzed in a magnetic field that was generated by an alternating current (AC) at various frequencies from 10 Hz to 25,000 Hz. The experimental results demonstrate that the χ_ac declines as the thickness of the as-deposited sample and the post-annealed sample (T_A=150 °C) increases because the lower coercivity (H_c) of thinner CoFeB films is similar to a soft magnetic characteristic and is associated with a higher χ_ac value. The best χ_ac value is obtained at a thickness of 100 Å under both conditions. The χ_ac value of the post-annealed sample exceeds that of the RT sample at thicknesses from 100 Å to 500 Å because the magneto crystalline anisotropy of the post-annealed sample yields the highest χ_ac value at the optimal resonance frequency (f_res), at which the spin sensitivity is maximal. The X-ray diffraction patterns (XRD) of as-deposited CoFeB films reveal their amorphous structure. The XRD results for the post-annealed films include a main peak at 2θ=44.7° from the body-centered cubic (BCC) nanocrystalline CoFe that indicated a (110) textured structure. Post-annealing treatment caused that the amorphous structure to become more crystalline by a thermally driven process, such that the χ_ac value of the post-annealed sample exceeded that of the RT sample. This experimental result demonstrates that the χ_ac value decreased as the thickness of the thin film increased. Finally, the CoFeB thin films had the best χ_ac at low frequency (<50 Hz) following post-annealing treatment. The results obtained under the two conditions indicate that the maximum χ_ac value and the optimal f_res of a 100 Å-thick CoFeB thin film were 1.6 and 30 Hz, respectively, following post-annealing at T_A=150 °C for 1 h, suggesting that a 100 Å-thick CoFeB thin film that has been post-annealed at T_A=150 °C can be utilized as a gage sensor and in transformer applications at low frequencies.     

Magnetoelectric coupling in multiferroic heterostructure of rf-sputtered Ni–Mn–Ga thin film on PMN–PT

In this paper, we report a preparation of multiferroic heterostructure from thin film of Ni–Mn–Ga (NMG) alloy and lead magnesium niobate–lead titanate (PMN–PT) with effective magnetoelectric (ME) coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. The heterostructure was prepared by relatively low temperature (400 °C) deposition of the film on single crystal of piezoelectric PMN–PT substrate using rf magnetron co-sputtering of Ni₅₀Mn₅₀ and Ni₅₀Ga₅₀ targets. Magnetic measurements by Superconducting Quantum Interference Design (SQIUD) Magnetometer and Vibrating Sample Magnetometer (VSM) on the film revealed that the film is in ferromagnetically ordered martensitic state at room temperature with saturation magnetization of ∼240 emu/cm³ and Curie temperature of ∼337 K. Piezoresponse force microscopy (PFM) measurement done at room temperature on the substrate showed the presence of expected hysteresis loop confirming the stability of the piezoelectric state of the substrate after deposition. Room temperature ME voltage coefficient (α_ME) of the heterostructure was measured as a function of applied bias dc magnetic field in Longitudinal–Transverse (L–T) ME coupling mode by lock-in technique. A maximum ME coefficient α_ME of 3.02 mV/cm Oe was measured for multiferroic NMG/PMN–PT heterostructure which demonstrates that there is ME coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material.     

Spin-glass-like ordering in the spinel ZnFe2O4 ferrite

In the present study, spin-glass-like ordering has been observed in the spinel ZnFe₂O₄ ferrite. Field cooled (FC) and zero-field cooled (ZFC) DC magnetizations display divergence at low temperature, which indicates a frozen state with the freezing temperature of T_f=21 K. Frequency dependence of AC susceptibility measurement was performed on the sample. It shows a peak at around T_f, with the peak position shifting as a function of driving frequency, indicating a spin-glass-like transition of the sample. The sample shows a typical spin-glass behavior with a manifestation of non-equilibrium dynamics of the spin glass, such as aging, rejuvenation and memory effects. These experimental findings indicate that Zn-ferrite exhibits a spin-glass-like phase at low temperature and it is not canted antiferromagnetic.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Structure,magnetic and magnetoresistance properties of Pr0.67Sr0.33MnO3 manganite oxide prepared by ball milling method

A sample of Pr_0.67Sr_0.33MnO₃ nanoparticles was synthesized by the ball milling method. X-ray diffraction pattern of the sample showed orthorhombic system with Pnma space group. The average crystallite size of 110 nm was obtained by both Scanning Electron Microscopy and X-ray diffraction. Magnetic measurements showed para-to-ferromagnetic transition with a Curie temperature of T_C=269 K. Electrical investigations showed that all our samples exhibit a semi-conducting behavior above T_C and a metallic-like one at lower temperatures. The sample exhibited a large magnetoresistance of 30% at room temperature in an applied magnetic field of 2 T. The transport and the magnetic properties were interpreted in terms of the existence of magnetic polarons in the sample.     

Epitaxial MnP thin films: epitaxial growth,magnetic and electrical properties

We have grown 500 Å MnP on undoped GaAs(1 0 0) substrate using solid-source molecular beam epitaxy. In order to characterize the crystal structure of MnP, we performed in-situ reflection high energy electron diffraction and θ–2θ XRD X-ray diffraction studies. From the measurements of superconducting quantum interference device, Quantum Design, MnP thin film shows ferromagnetic ordering at around 291.5 K. It shows a metallic resistivity in MnP thin film.     

Magnetic susceptibility study of Ce in PbCeA (A=Te,Se, S)

The magnetic susceptibility of Pb_1-xCe_xA (A=S, Se and Te) crystals with Ce³⁺ concentrations 0.006≤x≤0.036 was investigated in the temperature range from 2 K to 300 K. The magnetic susceptibility data was found to be consistent with a ²F_5/2 lowest manifold for Ce³⁺ ions with a crystal-field splitting Δ=E(Γ₈)−E(Γ₇) of about 340 K, 440 K and 540 K for Pb_1-xCe_xTe, Pb_1-xCe_xSe, and Pb_1-xCe_xS, respectively. For all the three compounds the doublet Γ₇ lies below the Γ₈ quadruplet which confirms the substitution of Pb²⁺ by Ce³⁺ ions in the host crystals. The observed values for the crystal-field splitting are in good agreement with the calculated ones based on the point-charge model. Moreover, the effective Landé factors were determined by X-band (∼9.5 GHz), electron paramagnetic measurements (EPR) to be g=1.333, 1.364, and 1.402 for Ce ions in PbA, A = S, Se and Te, respectively. The small difference with the predicted Landé factor g of 10/7 for the Γ₇ (J=5/2) ground state was attributed to crystal-field admixture.     

Magnetic properties of stuffed copper chromium tellurides Cu1+xCr2+yTe4 (x=0-1, y<0.3)

We present a detail study of the effect of excess metal atoms on the magnetic properties of Cu_1+xCr_2+yTe₄ at 2-400 K. With the increase in x=0-1 and y<0.3, these compounds retain metallic behavior, while ferromagnetic ordering temperature reduces from 325 to 160 K. Our low field susceptibility χ_ac measurements reveal a second transition on cooling below the ferromagnetic ordering; the transition at around 160-180 K intensifies with the excess amount of copper and chromium atoms. The value of spontaneous magnetization at 2 K remains between 2.6 and 2.9μ_B across all the compositions and it reduces with temperature as M(T)∼A₀T^3/2+A₁T^5/2, as expected for the excitation of Bloch's spin waves in a model of the Heisenberg ferromagnet. Our terminal composition Cu_1.9Cr_2.25Te₄ showed only second transition at 160 K with short range magnetic order much above the transition temperature and in the absence of the specific heat jump at this temperature. The magnetic properties are explained as a result of random magnetic anisotropy in the excess-metal compositions induced by the interstitial atomic defects in their parent spinel structure. The large stuffing of cations has been made possible in the telluride compounds because of the large size of tellurium and also by the covalent bonding that stabilizes the defect structure.     

Sintering temperature dependence of room temperature magnetic and dielectric properties of Co0.5Zn0.5Fe2O4 prepared using mechanically alloyed nanoparticles

Co_0.5Zn_0.5Fe₂O₄ nanoparticles were prepared using mechanical alloying (MA) and sintering. The crystallite size, coercivity, retentivity and saturation magnetization were also measured. The frequency dependence of dielectric and the magnetic parameters, namely, real permittivity ε′, loss tanget tan δ, real permeability μ′ and loss factor μ″ were measured at room temperature for samples sintered from 600 to 1000 °C, in the frequency range 10 MHz to 1.0 GHz. The results show that the crystallite size of the resulting products ranges between 16 and 67 nm for as-milled sample and the sample sintered at 1000 °C, respectively. The sample sintered at 1000 °C, measured at room temperature exhibited a saturation magnetization of 37 emu g⁻¹. The values of permittivity remain constant within the measured frequency, but vary with sintering temperature. The permeability values, on the other hand however vary with both the sintering temperature and the frequency, thus, the absolute value of the permeability decreased after the natural resonance frequency.     

45 nm CMOS technology with low temperature selective epitaxy of SiGe

This paper describes the advanced embedded silicon germanium (eSiGe) technologies to apply the 45 nm node CMOS fabrication technology. There are three key techniques as follows. The first technique is a low temperature of epitaxial growth at 550 °C to suppress staking faults in eSiGe layer. The second one is a controlling of recess shape for eSiGe. Sigma(Σ)-shaped recess is applied, because the strain force on the channel of MOSFET is increased effectively by narrowing spacing between source and drain. The third one is to apply particular surface cleaning treatment before the epitaxial growth, to get the excellent SiGe crystallinity. We demonstrated the drain current of I_on = 725 μA/μm and I_off = 100 nA/μm for PMOSFET using above these techniques.