铒离子注入碳化硅的射程和退火行为研究

用300—500 keV能量的铒(Er)离子注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的Er离子注入6H-SiC晶体的平均投影射程R_p和射程离散ΔR_p,将测出的实验值和TRIM软件得到的理论模拟值进行了比较,发现R_p的实验值与理论值符合较好,ΔR_p的实验值和理论值差别大一些 关键词： 离子注入 投影射程和射程离散 退火行为 卢瑟福背散射技术     

The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions

Abstract

Two LiNbO₃ (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 10¹⁴ ions/cm² and 3.5 × 10¹⁴ ions/cm² with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO₃ sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 10¹⁶ ions/cm². The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO₃. The results show: (1) the damage in LiNbO₃ created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO₃ crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO₃ after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO₃.     

Spectroscopic properties of Er<Superscript>3+</Superscript> ions in LiNbO<Subscript>3</Subscript> crystals codoped with HfO<Subscript>2</Subscript>

The results of the spectroscopic analysis of transition strengths for Er³⁺ ions in a series of Hf:Er:LiNbO₃ crystals with variable Hf content and fixed Er content are reported. Unpolarized UV-VIS-NIR absorption spectra, upconversion fluorescence spectra excited at 800 nm, and microsecond time-resolved spectra excited at 400 nm and 800 nm by 800 nm femtosecond laser were measured at room temperature. The HfO₂ incorporation has influence on Er³⁺ radiative lifetimes, and fluorescence branching ratios. For Hf(4 mol %):Er(1 mol %):LiNbO₃, Ω₂=2.63×10^-20 cm², Ω₄=2.86×10^-20 cm², and Ω₆=0.72×10^-20 cm². Ω₂<Ω₄ is contrary to the Er³⁺ general trend of Ω₂>Ω₄>Ω₆ when the Hf content is below its threshold concentration. In addition, the sum of Ω increases with the Hf content when the HfO₂ content below 6 mol % is unfamiliar. The upconversion mechanism is discussed in this work. PACS 71.20.Eh; 77.84.Dy; 42.62.Fi; 42.65.Ky     

Ni离子注入多晶ZrO2的表面电性能和结构

对氧化钇(Y₂O₃)部分稳定氧化锆(ZrO₂)样品在室温下进行了Ni离子注入(140kev,5×10¹⁵-2×10¹⁷ios/cm²)和热退火处理.应用电学测量,Rutherford背散射技术(RBS),X射线光电子能谱(XPS)和喇曼光谱方法研究了Ni离子注入多晶ZrO₂的表面电性能,注入层结构及其热退火的影响。     

一种新型掺铒碲酸盐玻璃的光谱性质研究

研究了一种新型掺Er³⁺碲酸盐玻璃的光谱性质；应用Judd-Ofelt理论计算了碲 酸盐玻璃中Er³⁺离子的强度参数Ω(Ω₂=479×10^-20 cm²,Ω₄= 152×10^-20cm²,Ω₆=066×10^-20cm2)，计算了离子的自发跃迁概 率，荧光分支比；应用McCumber理论计算了Er³⁺的受激发射截面(σ_{e=1040×1 0^-21cm²)，Er³⁺离子⁴I13/ 2→⁴I15/2发射谱的 荧光半高宽(FWHM=655nm)及各能级的荧光寿命(⁴I13/2 能级为τrad =399ms)；比较了不同基质玻璃以及不同类型碲酸盐玻璃中Er³⁺离子的光谱 特性， 结果表明该掺铒碲酸盐玻璃具有更好的光谱性能，更适合于掺Er³⁺光纤放大 器实现宽带和高增益放大. 关键词： 碲酸盐玻璃 光谱性质 Judd-Ofelt理论}     

铒离子注入6H-SiC的横向离散研究

利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布、射程离散和横向离散规律等是很重要的.用400 keV能量的铒(Er)离子分别与样品表面法线方向成0°,45°和 60°倾角注入碳化硅(6H-SiC)晶体中,利用卢瑟福背散射技术研究了剂量为5×10¹⁵ cm^-2 的400 keV Er离子注入6H-SiC晶体的横向离散.测出的实验值与TRIM98和SRIM 2006得到的理论模拟值进行了比较,发现实验值跟TRIM98和SRIM 关键词： 离子注入 6H-SiC 卢瑟福背散射技术 横向离散     

Crystalline structure and optical spectroscopy of Er3+-doped KGd(WO4)2 single crystals

4 )₂ single crystals doped with Er³⁺ have been grown by the flux top-seeded-solution growth method. The crystallographic structure of the lattice has been refined, being the lattice constants a=10.652(4), b=10.374(6), c=7.582(2) Å, β=130.80(2)°. The refractive index dispersion of the host has been measured in the 350–1500 nm range. The optical absorption and photoluminescence properties of Er³⁺ have been characterised in the 5–300 K temperature range. At 5 K, the absorption and emission bands show the (2J+1)/2 multiplet splittings expected for the C₂ symmetry site of Er in the Gd site. The energy positions and halfwidths of the 72 sublevels observed have been tabulated as well as the cross sections of the different multiplets. Six emission band sets have been observed under excitation of the ⁴F_7/2 multiplet. The Judd–Ofelt (JO) parameters of Er³⁺ in KGW have been calculated: Ω₂=8.90×10^-20 cm², Ω₄=0.96×10^-20 cm², Ω₆=0.82×10^-20 cm². Lifetimes of the ⁴S_3/2, ⁴F_9/2, and ⁴I_11/2 multiplets have been measured in the 5–300 K range of temperature and compared with those calculated from the JO theory. A reduction of the ⁴S_3/2 and ⁴I_11/2 measured lifetimes with increasing erbium concentration has been observed, moreover the presence of multiphonon non-radiative processes is inferred from the temperature dependence of the lifetimes. Received: 15 December 1997/Revised version: 10 July 1998     

Spatial distribution of defects produced by boron ion implantation of silicon

A simple technique for the study of the spatial distribution of the damage produced by ion implantation of silicon has been developed. The damage depth distribution for 40 keV boron ions in silicon has been studied at irradiation doses from 7 × 10¹¹ to 3.9 × 10¹⁴ ions/cm² and the relative defect peak depth R _d/R _p = 0.85 determined. An increase of layer conductivity as the surface part of the implanted layer is removed has been revealed. This effect is caused by the presence of radiation defects in the surface region of the layer. The “electrical” cluster diameter is about 28 A and the overlapping cluster dose is close to 1 × 10¹³ ions/cm².     

An investigation of range distribution parameters of implanted 19F ions in Au,Ag and Cu noble metals

Depth profiles of fluorine implanted in gold, silver and copper metal have been accurately measured using the ¹⁹F(p,αγ)¹⁶O resonance nuclear reaction at E_R = 872.1 keV. A proper deconvolution calculation method was used to extract the depth profile of fluorine from the experimental excitation yield curves. The range parameters, R_p, ΔR_p, and SK obtained in this work were compared with the theoretical calculations. The comparison shows that for all materials studied here the experimental R_p values are in good agreement with the results obtained by the TRIM96 code, while the experimental range stragglings, ΔR_p, are systematically larger than the TRIM simulation results.     

Intensity parameters for Er<Superscript>3+</Superscript> ions in calcium-niobium-gallium garnet crystals

Based on the analysis of the absorption spectra of Er-doped calcium-niobium-gallium garnet (Er:CNGG) crystals according to the Judd-Ofelt theory, the intensity parameters for these crystals are determined to be Θ₂ = 3.43 × 10^?20 cm² Θ₄ = 1.20 × 10^?20 cm², and Θ₆ = 0.58 × 10^?20 cm². The parameters found are compared with the intensity parameters for other laser oxide crystals. Using these intensity parameters, the probabilities of radiative transitions between the energy levels of Er³⁺ ions in CNGG crystals and the luminescence branching ratios β_JJ’ are calculated. From the measured lifetime of the ⁴ I _11/2 level of Er³⁺ ions (τ = 626 μs) and the probability of the radiative transition from this level (A = 192 s^?1), it is found that about 88% of the excitation energy in the Er:CNGG crystals is nonradiatively transferred from the ⁴ I _11/2 to the ⁴ I _13/2 level. It is suggested that an increase in the oscillator strength and in the line strength of the ⁴ I _15/2 → ² H _11/2 transition of Er³⁺ in CNGG crystals, as well as an increase in the intensity parameter Θ₂ with respect to the corresponding parameters for other garnet crystals are caused by the existence in CNGG crystals of Er³⁺ centers with the environment symmetry lower than D ₂.     

Materials modification at zirconium–silicon interface using swift heavy ions

The reactivity of the Zr/Si interface induced by swift heavy ion beams of Au has been investigated in the present work. Zirconium was evaporated on a clean silicon substrate in ultra high vacuum (UHV) at a pressure of 10^?8 Torr by the electron beam evaporation technique and the final layer was a thin film of Au to avoid oxidation of zirconium. The Zr/Si system was irradiated by 350 MeV Au²⁶⁺ ions at liquid nitrogen temperature at different fluences (0.46×10¹⁴, 1.85×10¹⁴ and 4.62×10¹⁴ ions/cm²). Rutherford back scattering (RBS) spectroscopy using 2 MeV He ions was used to monitor the Zr and Si concentration profiles and interdiffusion at the interfaces. The irradiation at the Zr/Si interface showed mixing. X-ray diffraction measurements confirmed the formation of the ZrSi₂ phase. Thermal spike formation and melting in the tracks was found to be the dominant process at the interfaces.     

Mg+注入对GaN晶体辐射损伤的研究

在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition，MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质，χ_min达到2.00%. 结合卢瑟福背散射/沟道(Rutherford backscattering/channeling，RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction，HXRD)的实验测量，研究了不同剂量和不同角度Mg⁺注入GaN所造成的辐射损伤. 实验结果表明，随注入剂量的增大，晶体的辐射损伤也增大，注入剂量在1×10¹⁵atom/cm²以下，χ_min小于4.78%，1×10¹⁶atom/cm²是Mg⁺注入GaN的剂量阈值，超过这个阈值，结晶品质急剧变差，χ_min达到29.5%；随机注入比沟道注入的辐射损伤大，且在一定范围内随注入角度的增大，损伤也增大，在4×10¹⁵atom/cm²剂量下偏离〈0001〉沟道0°，4°，6°，9°时的χ_min(%)分别为6.28，8.46，10.06，10.85；经过700℃/10min+1050℃/20s两步退火和1000℃/30s高温快速退火后，晶体的辐射损伤都有一定程度的恢复，而且1000℃/30s高温快速退火的效果更好，晶体的辐射损伤可以得到更好的恢复. 关键词： GaN 卢瑟福被散射/沟道 高分辨X射线衍射 辐射损伤     

Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation

Photoluminescence (PL) properties of Er-doped β-FeSi₂ (β-FeSi₂:Er) and Er-doped Si (Si:Er) grown by ion implantation were investigated. In PL measurements at 4.2 K, the β-FeSi₂:Er showed the 1.54 μm PL due to the intra-4f shell transition of ⁴I_13/2→⁴I_15/2 in Er³⁺ ions without a defect-related PL observed in Si:Er. In the dependence of the PL intensity on excitation photon flux density, the obtained optical excitation cross-section σ in β-FeSi₂:Er (σ=7×10⁻¹⁷ cm²) is smaller than that in Si:Er (σ=1×10^-15 cm²). In the time-resolved PL and the temperature dependence of the PL intensity, the 1.54 μm PL in β-FeSi₂:Er showed a longer lifetime and larger activation energies for non-radiative recombination (NR) processes than Si:Er. These results revealed that NR centers induced by ion implantation damage were suppressed in β-FeSi₂:Er, but the energy back transfer from Er³⁺ to β-FeSi₂ was larger than Si:Er.     

掺铒铋酸盐玻璃的光谱性质研究

研究了掺铒铋酸盐玻璃的吸收和荧光光谱性质,应用Judd-Ofelt理论计算了玻璃的三个强度参量Ω_t=(t=2,4,6),分别为Ω₂=3.71×10^-20cm²,Ω₄=1.86×10^-20cm²,Ω₆=1.28×10^-20cm²,计算了Er³⁺离子的自发跃迁几率、荧光分支比等光谱参量.经荧光谱测试发现掺Er³⁺铋酸盐玻璃的荧光半高宽可达70nm.应用McCumber理论计算1.53μm处的受激发射截面可达9×10^-21cm².对Er³⁺离子在不同基质玻璃中光谱特性的比较发现,Er³⁺在铋酸盐玻璃中具有相对较高的受激发射截面和宽的荧光半高宽.     

Enhanced emission of Er from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers

Alternately Er doped Si-rich Al₂O₃ (Er:SRA) multilayer film, consisting of alternate Er-Si-codoped Al₂O₃ (Er:Si:Al₂O₃) and Si-doped Al₂O₃ (Si:Al₂O₃) sublayers, has been synthesized by co-sputtering from separated Er, Si, and Al₂O₃ targets. The dependence of Er³⁺ related photoluminescence (PL) properties on annealing temperatures over 700-1100 °C was studied. The maximum intensity of Er³⁺ PL, about 10 times higher than that of the monolayer film, was obtained from the multilayer film annealed at 950 °C. The enhancement of Er³⁺ PL intensity is attributed to the energy transfer from the silicon nanocrystals in the Si:Al₂O₃ sublayers to the neighboring Er³⁺ ions in the Er:Si:Al₂O₃ sublayers. The PL intensity exhibits a nonmonotonic temperature dependence: with increasing temperature, the integrated intensity almost remains constant from 14 to 50 K, then reaches maximum at 225 K, and slightly increases again at higher temperatures. Meanwhile, the PL integrated intensity at room temperature is about 30% higher than that at 14 K.     

Spectroscopic study of double sodium-yttrium fluoride crystals doped with erbium Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Er<Superscript>3+</Superscript>: I. Intensities of luminescence spectra and kinetics of luminescence

Na_0.4Y_0.6F_2.2:Er³⁺ (NYF:Er) crystals with an erbium concentration as high as 100 at. % (Na_0.4Er_0.6F_2.2) were grown by the Bridgman-Stockbarger method. The optical spectra were investigated at low (6 K) and room temperatures. It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790–801 and 965–980 nm) corresponding to the emission range of laser diodes. The peak absorption cross section σ_a for the band peaked at λ=970.4 nm is 0.15×10^?20 cm². On the basis of the analysis of the absorption and luminescence spectra at low (6 and 12 K) temperatures, the structure of the Stark splitting of erbium levels was determined as a structure of quasi-centers for which Stark components are inhomogeneously broadened. The oscillator strengths of the transitions from the ground state of erbium to excited multiplets were calculated from the absorption spectra measured at T=300 K, and the intensity parameters Ω_t were determined by the Judd-Ofelt method: Ω₂=1.65×10^?20 cm², Ω₄=0.56× 10^?20 cm², and Ω₆=1.01×10^?20 cm². These values of the intensity parameters were used to calculate the probabilities of radiative transitions and the branching ratios. The rates of multiphonon nonradiative transitions in NYF: Er were estimated. The luminescence decay kinetics for radiative levels of erbium ions upon their selective excitation by nanosecond laser pulses was studied. The intracenter lifetimes of radiative levels of erbium ions were determined from the luminescence kinetics upon selective ion excitation by low-intensity light in a sample with a low erbium concentration (0.5%). It is demonstrated that, with an increase in temperature from 6 to 300 K, luminescence from the ⁴ G _11/2, ² G(H)_9/2, and ⁴ F _9/2 levels is quenched as a result of multiphonon nonradiative transitions. Luminescence from the ⁴ I _9/2 level is quenched only insignificantly with increasing temperature, and no quenching of luminescence from the ⁴ I _11/2 and ⁴ I _13/2 levels is observed. The spectra of steady-state luminescence of NYF:Er(0.5–15%) crystals were investigated upon broadband excitation by UV and UV-visible lamp light and selective time-resolved laser excitation. It is shown that low-lying levels of erbium ions separated by an energy gap smaller than 2500 cm^?1 are populated via cascade mechanisms. On the basis of the results obtained, it is concluded that NYF:Er ³⁺ crystals are promising candidates for active media of tunable diode-pumped lasers.     

Spectroscopic properties of Er<Superscript>3+</Superscript> in Sc:LiNbO<Subscript>3</Subscript> crystal

The results of Er³⁺ ion spectroscopic analysis in Sc:LiNbO₃ crystals were reported. The line strengths from the ground state to the excited state were evaluated from the measured unpolarized absorption spectrum and analyzed by using standard Judd–Ofelt theory. For Sc(3 mol. %):Er (1 mol. %):LiNbO₃ crystal, the obtained intensity parameters are: Ω₂=3.72×10^-20 cm², Ω₄=1.07×10^-20 cm², and Ω₆=0.98×10^-20 cm². The fluorescence spectra and microsecond time-resolved spectra were investigated in the visible region. The excited state absorption transition strengths at 800 nm excitation were evaluated based on Judd–Ofelt theory. The results obtained here were compared to results from other research on Er:LiNbO₃ crystals. PACS 71.20.Eh; 77.84.Dy; 42.70.Hj; 42.62.Fi; 42.65.Ky     

Damage and lattice location studies in Hg implanted Hg1–xCdxTe

Abstract

Rutherford backscattering (RBS) and ion induced X-ray (PIXE) channeling experiments have been used to study the damage accompanying Hg and Al implantations into Hg_0.8Cd_0.2 Te and its annealing as well as to determine the location of Hg in the crystal.

The damage induced by the implantation of 300 keV Hg and 250 keV Al ions at room temperature was found from RBS channeling studies to reach a saturation level at doses of 1 × 10¹⁴ cm^?2 and 3 × 10¹⁴ cm^?2 respectively. The damage resembles that characteristic for extended defects and it anneals at ≈ 300°C.

The location of the constituents of Hg implanted Hg_0.8 Cd_0.2 Te was studied by PIXE channeling observing the characteristic X-rays for each element. Angular scans indicate that the channels are mostly blocked by Hg atoms for both unannealed and, to a lesser extent, annealed crystals. This observation supports the suggestion that interstitial Hg atoms may be responsible for the conductivity of Hg implanted Hg_1–x Cd_g Te.     

Optical spectroscopy and laser parameters of Zn2+/Er3+/Yb3+-tridoped LiNbO3 crystal

The Zn/Er/Yb:LiNbO₃ and Er/Yb:LiNbO₃ crystals were grown by the Czochralski technique. The laser characteristics of 1.54 μm emission were predicted based on the Judd–Ofelt theory, and the intensity parameters Ω_t (Ω₂=7.23×10^?20 cm², Ω₄=3.15×10^?20 cm² and Ω₆=1.43×10^?20 cm²) were obtained. The stimulated emission cross sections (σ_em) at 1.54 μm emission in Zn/Er/Yb:LiNbO₃ were calculated based on the McCumber theory and the Füchtbauer–Ladenburg theory. The gain cross section spectrum of Zn/Er/Yb:LiNbO₃ crystal was also investigated. Under 980 nm excitation, a lenghthening lifetime of 1.54 μm emission and an enhancement of green upconversion emission were observed for Zn/Er/Yb:LiNbO₃ crystal. The studies on the power pump dependence and the upconversion mechanism suggested that both green and red upconversion emissions were populated via the three-photon process, and Zn²⁺ ion tridoping increases the probability of cross relaxation process between the two neighboring Er³⁺ ions.     

Damage anneal of antimony/phosphorus double implants in silicon

A method is presented for avoiding the dislocation generation in (100) silicon implanted with phosphorus doses up to 5×10¹⁵ ions/cm² at 50 keV. The residual defects after the damage anneal are considerably reduced if the phosphorus implant is combined with a low dose, e.g. 1×10¹⁴ ions/cm², antimony implant which produces a deeper surface layer of amorphous silicon. It is essential that the phosphorus ions are implanted shallower than the antimony ions, and come to rest within the amorphous layer. Subsequent thermal annealing proceeds by a solid phase epitaxial regrowth mechanism.