Early stages of laser mixing process in Sb/Ge multilayer thin films

The onset of mixing at the interfaces between Sb and Ge in thin multilayered films containing two or four layers has been studied. The films were irradiated with nanosecond laser pulses in order to trigger mixing, and in situ reflectivity measurements were used to follow the transformation in real-time. Cross sectional transmission electron microscopy analysis was used to study both the structure and the composition profile before and after irradiation.A threshold irradiation energy exists for the onset of mixing, below which roughening of the interface between the layers is observed, together with recrystallization of the surface Sb layer following melting. The results are consistent with a melting/diffusion process which is inhomogeneously nucleated at the interface between the top Sb and Ge layers. Once mixing is initiated an amorphous Sb-Ge layer of constant thickness is formed, corresponding to mixing along a well defined planar melt front. Voids are observed at the former Sb/Ge interface, which may be related to interfacial stress in the as-grown configuration.     

Growth and melting behaviour of thin in films on Ge(100)

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature T _m as well as a strong supercooling of the films is observed. The electric field gradient for ¹¹¹In(¹¹¹Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.     

Vertical ordering of islands in Ge-Si multilayers

Growth and ordering of GeSi islands in Ge-Si multilayer systems during deposition by Low-Pressure Chemical Vapour Deposition (LPCVD) at 700°C on Si (001) substrates have been investigated for different layer distances by transmission electron microscopy of cross-section and plane-view specimens. Vertical ordering of GeSi islands with almost perfect correlation is observed for distances between the Ge layers of 100 nm. At larger interlayer distances, a continuous decrease of the correlation is found. Vertical ordering in the multilayer system is modelled in terms of the elastic interaction between island nuclei in a newly forming layer and close islands in a buried layer below. Lateral ordering parallel to < 100 >, as observed previously in larger Ge-Si multilayer systems is not found in our systems, consisting of two Ge layers. This difference indicates that lateral ordering in the upper Ge layers of a large multilayer system is triggered by vertical ordering.     

Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100)

We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the surfactant As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.     

短波长相变光盘记录介质Ge2Sb2Te5薄膜的制备及静态性能研究

研究了６３２．８ｎｍ波长下适用的相变光盘介质Ｇｅ２Ｓｂ２Ｔｅ５薄膜的制备方法和静态光存诸记录特性，发现该薄膜可在１００ｎｓ条件下实现直接重写，在优化膜层结构后，写擦循环次数高达１０＾６，反射率对比度在１５％以上。     

Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn₂GeO₄ has been formed with (2 2 0) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761 nm, which originate from the transition between oxygen vacancy () and Zn vacancies (V_Zn), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn₂GeO₄ from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn₂GeO₄:Mn.     

Time-differential observation of quadrupole interactions following recoil implantation of a Ge-probe into Cd,In, Sn,and Sb

We have measured the quadrupole interactions of excited⁶⁷Ge nuclei in the polyvalent metals Cd, In, Sn, and Sb. The experiments have been performed by the time-differential angular distribution technique, following the reaction⁶⁴Zn(, n)⁶⁷Ge to produce and implant the Ge nuclei into the different metals (DIMPAD). A sandwich target system is used, which allows the application of the DIMPAD-technique for low recoil energies. The extracted electric field gradients are found to depend on the host metal as well as on the solute Ge, an interpretation is suggested on the basis of charge screening effects.     

Investigation of laser-annealed antimony implanted Si by ion backscattering and channeling and structure analysis

Rutherford backscattering (RBS), ion channeling and surface studies were done to investigate diffusion of ion implanted Sb in Si. Clean and polished Si was implanted by 190KeV Sb⁺ ions to a dose of 2.3×10¹⁵cm^–2. Laser annealing was carried out by a single 10 J/cm² laser pulse from a Nd: glass (7 ns FWHM) laser. Concentration profiles of Sb as a function of depth and dopant substitutionalities were measured by helium-ion backscattering and channeling. The laser shot resulted in melting of the central portion of the spot. A honey comb type surface morphology was found by SEM analysis. Dektak surface profiles showed a crater of 600 nm depth. One-dimensional heating calculations show that dopant diffusion depths, after consideration of simultaneous evaporation, can be 400 nm, whereas experiments indicate larger depths (1 m). Calculated crater depth is roughly twice the experimental value. Measured depths are much larger than calculated by heat diffusion and indicate that regrowth and distribution of Sb has been modified by convection in the melt. We estimate good substitutionality up to 4 J/cm² and discuss energy density dependence for such high-energy density laser pulses.     

Interdiffusion at Sb/Ge interfaces induced in thin multilayer films by nanosecond laser irradiation

Thin films consisting of 3 or 4 Sb and Ge alternating layers are irradiated with single nanosecond laser pulses (12 ns, 193 nm). Real time reflectivity (RTR) measurements are performed during irradiation, and Rutherford backscattering spectrometry (RBS) is used to obtain the concentration depth profiles before and after irradiation. Interdiffusion of the elements takes place at the layer interfaces within the liquid phase. The reflectivity transients allow to determine the laser energy thresholds both to induce and to saturate the process being both thresholds dependent on the multilayer configuration. It is found that the energy threshold to initiate the process is lower when Sb is at the surface while the saturation is reached at lower energy densities in those configurations with thinner layers.     

Crystallization kinetics and crystal morphology in thin poly(ethylene oxide) films

We present a detailed study of the kinetics of crystallization for thin films of poly(ethylene oxide) (PEO). Measurements of the growth rate have been carried out using optical-microscopy techniques on films of monodisperse PEO. Films with thicknesses from 13 nm to ~2 m were crystallized isothermally at temperatures ~20°C below the melting point. A remarkable non-monotonic slowing-down of the crystal growth is observed for films with thickness less than ~400 nm. The changes in the growth rate from bulk-like values is significant and corresponds to a factor of 40 decrease for the thinnest films studied. The morphologies of isothermally crystallized samples are studied using atomic-force microscopy. We find that a morphology, similar to diffusion-controlled growth (dendritic growth and densely branched growth), is observed for films with h < 150 nm. In addition, changes in the morphology occur for thicknesses consistent with changes in the growth rate as a function of film thickness.     

Interplay of surface morphology, strain relief, and surface stress during surfactant mediated epitaxy of Ge on Si

Lattice-mismatch-induced surface or film stress has significant influence on the morphology of heteroepitaxial films. This is demonstrated using Sb surfactant-mediated epitaxy of Ge on Si(111). The surfactant forces a two-dimensional growth of a continous Ge film instead of islanding. Two qualitatively different growth regimes are observed. Elastic relaxation: Prior to the generation of strain-relieving defects the Ge film grows pseudomorphically with the Si lattice constant and is under strong compressive stress. The Ge film relieves strain by forming a rough surface on a nm scale which allows partial elastic relaxation towards the Ge bulk lattice constant. The unfavorable increase of surface area is outbalanced by the large decrease of strain energy. The change of film stress and surface morphology is monitored in situ during deposition at elevated temperature with surface stress-induced optical deflection and high-resolution spot profile analysis low-energy electron diffraction. Plastic relaxation: After a critical thickness the generation of dislocations is initiated. The rough phase acts as a nucleation center for dislocations. On Si(111) those misfit dislocations are arranged in a threefold quasi periodic array at the interface that accommodate exactly the different lattice constants of Ge and Si. Received: 1 April 1999 / Accepted: 17 August 1999 / Published online: 6 October 1999     

Spinodal wrinkling in thin-film poly(ethylene oxide)/polystyrene bilayers

Optical microscopy and atomic force microscopy were used to study a novel roughness-induced wrinkling instability in thin-film bilayers of poly(ethylene oxide) (PEO) and polystyrene (PS). The observed wrinkling morphology is manifested as a periodic undulation at the surface of the samples and occurs when the bilayers are heated above the melting temperature of the semi crystalline PEO (T_m = 63 ) layer. During the wrinkling of the glassy PS capping layers the system selects a characteristic wavelength that has the largest amplitude growth rate. This initial wavelength is shown to increase monotonically with increasing thickness of the PEO layer. We also show that for a given PEO film thickness, the wavelength can be varied independently by changing the thickness of the PS capping layers. A model based upon a simple linear stability analysis was developed to analyse the data collected for the PS and PEO film thickness dependences of the fastest growing wavelength in the system. The predictions of this theory are that the strain induced in the PS layer caused by changes in the area of the PEO/PS interface during the melting of the PEO are sufficient to drive the wrinkling instability. A consideration of the mechanical response of the PEO and PS layers to the deformations caused by wrinkling then allows us to use this simple theory to predict the fastest growing wavelength in the system.     

Stark broadening in the Sb III spectrum

The shapes of nine doubly ionized antimony (Sb III) spectral lines have been obtained in the laboratory helium plasma at 17 500 K electron temperature and electron density of . Measured line profiles are of a Voigt type. At the mentioned plasma conditions the Stark broadening has been found as the dominant mechanism in the Sb III line shapes formation. Using a deconvolution procedure the Lorentz (Stark) FWHM (Full-Width at Half of the Maximal intensity, W) have been obtained. Our measured Sb III Stark widths are the first data in the literature. The modified version of the linear, low-pressure, pulsed arc was used as a plasma source operated in helium with antimony atoms, as impurities. They were evaporated from the thin antimony layer, deposited on the silver cylindrical plates, located in the homogenous part of the discharge. This plasma source ensures good conditions for the generation of the doubly ionized antimony atoms in the helium plasma due to atomic processes concerning helium metastables.     

Phonon spectroscopy measurements at amorphous films

Phonon spectroscopy measurements were used to examine the scattering of high frequency phonons (300 GHz-1 THz) in amorphous materials. The experiments were done with the use of time and frequency resolved measurements of the phonon transmission behaviour through amorphous single films of different thicknesses. The typical film thicknesses were of the order of 10 nm. In contrast to the pure amorphous semiconductors Si and Ge our experiments show inelastic phonon scattering processes in the case of SiO₂ and SiH. This inelastic phonon scattering also occurs when the pure semiconductors Si and Ge are prepared in an O₂ or H₂ atmosphere, but is missing when the preparation process is done in an N₂ atmosphere. In films of the pure semiconductors a-Si and a-Ge we only found evidence to elastic scattering processes. In further experiments at heated a-SiH samples we could examine the atomical bonded hydrogen to be the center of the inelastic phonon scattering.The measurements and investigations described in this work were done in time of preparing a thesis at: Physikalisches Institut Teil 1, Universität Stuttgart, Pfaffenwaldring 57, D-70569 Stuttgart, Germany     

Rapid thermal annealing of electrically-active defects in virgin and implanted silicon

Chemical etching of single-crystalline (100)Si induced by pulsed laser irradiation at 308, 423, and 583 nm has been investigated as a function of the laser fluence and C1₂ pressure. Without laser-induced surface melting, etching requires Cl radicals which are produced only at laser wavelengths below 500 nm. With low laser fluences ((308 nm)<100 mJ/cm²) etching is non-thermal and based on direct interactions between photocarriers and Cl radicals. For fluences which induce surface melting ((308 nm)>440 mJ/cm²) etching is thermally activated. In the intermediate region both thermal and non-thermal mechanisms contribute to the etch rate.     

Thermal neutron capture cross-section of <Superscript>76</Superscript>Ge

The thermal neutron capture cross-sections of the ⁷⁶Ge(n,)⁷⁷Ge and the ⁷⁶Ge(n,)^77m Ge reactions have been measured by activating targets of isotopically enriched GeO₂ through cold neutrons. The -decay spectra after the -decay of ⁷⁷Ge and ^77m Ge were measured with HPGe detectors. From these spectra the cross-sections for the ⁷⁶Ge(n,) reactions were derived relative to the cross-section of ¹⁹⁷Au using the absolute emission probabilities of the observed -ray energies. The methods used in this work result in smaller systematic uncertainties than those obtained in previous experiments.     

Temperature gradients effects in low-power laser annealing of ion implantedα-Ge

The influence of temperature gradients in laser annealing of-Ge, obtained below the melting threshold, was tested by irradiating the samples with a linear fringe pattern from a pulsed ruby laser. The peak temperature reached on the specimen surface was calculated to be well below the melting threshold of the material. Temperature gradients are observed to enhance the crystallization process in the material. Spontaneous periodic structures, or ripples, having a period equal to the laser wavelength, are frequently observed in areas corresponding to minima of the fringe pattern.Gruppo Nazionale di Struttura della Materia     

Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm² in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm²) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm²), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm²), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993     

Phase transitions in gallium nanodroplets detected by dielectric spectroscopy

Both theoretical and experimental works give evidence that gallium exhibits solid phases labelled , , , besides the stable phase strongly dependent both on the size and the confinement conditions. An experimental technique was used based on capacitance and conductance measurements vs. temperature in the audiofrequency range. This technique is particularly sensitive to the conditions of the investigated particle surface that plays a fundamental role in the melting and more generally in the phase transition processes. In particular the strict relation between the derivative of the capacitance with respect to the temperature, dC/dT, and the entropy of the system is considered. In gallium nanoparticles 20 nm in radius, only the phase is shown to occur. Further the transition to liquid phase was detected. The melting process was found to start about 65 K below the full melting temperature value. In the case of particles 10 nm in radius, where different metastable phases may occur, the capacitance vs. temperature curve was found to display abrupt changes of the slope. The singularities are associated to a well defined transition temperature.     

Fabrication of nanopatterned germanium surface by laser-induced etching: AFM, Raman and PL studies

Fabrication of the nanopatterned germanium (Ge) surface is done by laser-induced etching. Atomic force microscopy is utilized here to study the surface and sizes of Ge nanoparticles. Raman and photoluminescence (PL) spectroscopy have been used to characterize their vibrational and light emission properties. Wavelength-dependent Raman investigations of these nanopatterned Ge surface reveal spatial distribution of sizes of nanoparticles. Nanopatterned Ge structures (etched for 60 min) emit a broad PL band having two maxima at 2.1 and 2.35 eV.