Tm:Y2SIO5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴(010),D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AIGaAs二极管抽运固体激光器.在2μm波段固体激光器的应用上将有很大的发展潜力.     

Eu3+:Y2SiO5晶体透射光谱和荧光谱研究

在室温条件下,对Ｅｕ＾３＋：Ｙ２ＳｉＯ５晶体的透射光谱和４５７．９ｎｍＡｒ＾＋激光激发荧光谱进行测量和研究。这些光谱表明,Ｅｕ＾３＋离子在Ｙ２ＳｉＯ５晶体中占据两种最低对称性Ｃ１格位。利用透射光谱和荧光谱对Ｅｕ＾３＋离子的最低激发态＾５Ｄ０的两种格位光谱进行了成功分离。实验发现,在＾５Ｄ０态两种格位谱的谱宽只有０．１ｎｍ左右,其峰间隔约为０．１８ｎｍ。另外,文中还测量了Ｅｕ＾３＋离子的基态＾７ＦＪ     

共沉淀法制备Y2SiO5∶Er3+ ,Yb3+ ,Tm3+及其上转换发光性能研究

采用化学共沉淀法制备了系列Y_1.98-2xYb_2x Er_0.02SiO₅(0.00≤x≤0.15)以及Y_1.736Yb_0.24Er_0.02Tm_0.004SiO₅上转换发光材料,比较了室温下Y_1.98-2xYb_2x Er_0.02 SiO₅ (x=0.00,0.08)样品在400—1600 nm范围内的吸收光谱,测量了所有样品在976 nm OPO激光器激发下的上转换发射光谱,以及Er³⁺离子⁴S_3/2(⁴F_9/2)→⁴I_15/2,Tm³⁺离子¹G₄→³H₆荧光衰减曲线和不同激发功率下的上转换蓝光发射强度,从而分析讨论了Er³⁺,Tm³⁺在Y₂SiO₅中的上转换发光机理.研究结果表明:在1250 ℃相对较低的温度下合成了X2型单斜晶系Y₂SiO₅ ∶Ln³⁺(Ln³⁺=Er³⁺,Yb³⁺,Tm³⁺),Yb³⁺的敏化显著增强了样品在976 nm附近的吸收能力,并大幅度加宽了该处的吸收带.分析上转换发射光谱发现:上转换绿光和红光强度都随着Yb³⁺浓度的增加先增强后减弱,但红光的猝灭浓度较高,归因于Er³⁺→Yb³⁺反向能量传递ETU4和Yb³⁺→Er³⁺正向能量传递ETU3过程的发生;上转换蓝光发射是三光子吸收过程,是通过Yb³⁺,Tm³⁺之间三次声子辅助的能量转移方式实现的. 关键词： 上转换 共沉淀 2SiO₅∶Er³⁺')" href="#">Y₂SiO₅∶Er³⁺ 3+')" href="#">Yb³⁺ 3+')" href="#">Tm³⁺     

Yb3+:Gd2SiO5晶体的结构和光谱性能

采用提拉法成功生长尺寸为φ30 mm× 75 mm的15at.%Yb³⁺:Gd₂SiO₅单晶, 并用Reitveld全谱拟合方法确定了其晶格常数、原子坐标和温度因子等参数. 用吸收光谱计算了Yb³⁺离子²F_7/2↔ ²F_5/2能级跃迁的振子强度、谱线强度、跃迁概率、 能级寿命和积分发射截面等光谱参数, 并根据激光性能评估得出结论: 表明该晶体具有较大的阈值特性, 有望采用大功率激光二极管泵浦实现可调谐或超快激光输出.     

Y2Ti2O7:Tm3+的制备及其发光性能研究

采用溶胶-凝胶法(Sol-gel)制备了不同烧结温度和Tm³⁺掺杂浓度的Y₂Ti₂O₇:xTm (x=0.005,0.01,0.03,0.05)荧光粉,分别采用X射线衍射分析仪(XRD)、透射电子显微镜(TEM)和荧光光谱仪对样品的晶型结构、形貌以及发光性能进行了表征。XRD结果表明,所得到的样品为单一立方相烧绿石结构。样品在361 nm紫外光激发下发射出 蓝光,其峰值波长为456 nm,对应于Tm³⁺的¹D₂→³F₄跃迁。1 000 ℃烧结的Y₂Ti₂O₇: 0.01Tm³⁺样品具有较好的发光性能。样品在456 nm处的相对发光强度随Tm³⁺掺杂浓度的增大先升高后降低,在Tm³⁺摩尔分数为1%时达到最大,即出现了浓度猝灭现象。     

Tm:YAG晶体光谱的温度特性及荧光的温度淬灭

通过测量不同温度下Ｔｍ：ＹＡＧ晶体的吸收光谱、荧光光谱和荧光寿命发现,温度是影响Ｔｍ：ＹＡＧ晶体光谱特性的重要因素。温度升高不仅引起Ｔ：ＹＡＧ晶体吸收光谱、荧光光谱的加宽和新光谱线的产生,而且引起荧光淬灭现象的发生。     

Yb:CaF2-SrF2激光晶体光谱性能以及热学性能的研究

采用坩埚下降法生长了Yb: CaF₂-SrF₂晶体,测试了该晶体的吸收和荧光光谱 以及在不同温度下晶体的热扩散系数和热膨胀系数,并且计算了晶体的热膨胀系数以及在常温下的热导率. 采用对比的方法,对晶体的吸收光谱,荧光光谱,热学性能进行了分析.从吸收和荧光光谱结果表明: 在掺杂相对较高浓度的SrF₂的混晶中, Yb³⁺吸收截面和发射截面比较大. Yb: CaF₂-SrF₂ (19%)晶体在1040 nm附近的发射截面比较大,光谱也比较宽. 这说明在掺杂相同浓度Yb时,混晶中CaF₂, SrF₂的比例不同,晶体的光谱性质不同, 主要原因是在混晶中晶体的无序度不同,晶体对称性降低,形成低对称光学中心. 从热扩散系数计算的热导率结果看出晶体具有比较好的热导率.     

Y2O3:Yb3+,Tm3+纳米材料的可见及紫外上转换发光

通过燃烧法制备了Yb³⁺-Tm³⁺共掺的Y₂O₃纳米粉体,并对样品在980 nm激光照射下的上转换发光特性进行了研究.实验发现,样品在可见光区域能够产生强烈的蓝色发光(476 nm和487 nm)和较弱的红色发光(约650 nm),而且同时观察到了两个紫外发光峰¹I₆→³H₆ (~297 nm)和^{1关键词： 2O₃:Yb3+')" href="#">Y₂O₃:Yb3+ 3+}')" href="#">Tm³⁺ 上转换光谱 敏化 紫外发光     

Ba2+取代及助熔剂对Sr3SiO5:Eu2+结构和发光性能的影响

采用还原气氛下的高温固相法制备了Sr3SiO5:Eu2+橙色荧光粉,利用X射线衍射、扫描电子显微镜和荧光分光光度计考察了Ba2+与Sr2+替换和助熔剂对Sr3SiO5:Eu2+晶体结构和发光性能的影响。结果表明:Ba2+取代Sr2+会使配位多面体膨胀,导致附近Eu2+占据的配位多面体压缩,晶体场强度增大。随着Ba2+取代量的增加,Eu2+逐渐占据Ba2+取代后的多面体中心,晶体场强度减弱,发射光谱峰值整体先由575 nm红移至592 nm后又蓝移回583 nm。Sr2+与Ba2+的量比n(Sr):n(Ba)=4时,发射光谱红移效果最佳。助熔剂H3BO3的掺入会使Sr3SiO5:Eu2+的发光强度急剧下降。而NH4F和NH4Cl掺入都能使Sr3SiO5:Eu2+的发射光谱强度增大,NH4F和NH4Cl单掺质量分数分别为2%和0.3%时增强效果最好,且NH4Cl的增强效果比NH4F要好很多。     

不同Yb掺杂量的Yb:Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb³⁺掺杂量分别为5.4at%, 16.3at%, 27.1at%, 53.6at%和100at%的Yb:Y₃Al₅O₁₂晶体.系统地表征和分析了Yb³⁺掺杂量对晶体吸收光谱和荧光光谱的影响.随着Yb³⁺掺杂量的增加，各峰值吸收系数呈线性增加的趋势.应用Smakula公式计算了各吸收峰对应的振荡强度，并分析了Yb³⁺掺杂量对振荡强度的影 关键词： 吸收光谱 荧光光谱 自吸收 浓度猝灭     

Degradation of Y2SiO5:Ce phosphor powders

The degradation of the cathodoluminescence (CL) intensity of cerium-doped yttrium silicate (Y₂SiO₅:Ce) phosphor powders was investigated for possible application in low voltage field emission displays (FEDs). Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of commercially available Y₂SiO₅:Ce phosphor powders. The degradation of the CL intensity for the powders is consistent with a well-known electron-stimulated surface chemical reaction (ESSCR) model. It was shown with XPS and CL that the electron stimulated reaction led to the formation of a luminescent silicon dioxide (SiO₂) layer on the surface of the Y₂SiO₅:Ce phosphor powder. XPS also indicated that the Ce concentration in the surface layer increased during the degradation process and the formation of CeO₂ and CeH₃ were also part of the degradation process. The CL intensity first decreased until about 300 C cm⁻² and then increased due to an extra peak arising at a wavelength of 650 nm.     

XPS analysis for degraded Y2SiO5:Ce phosphor thin films

X-ray photoelectron spectroscopy (XPS) results were obtained for standard Y₂SiO₅:Ce phosphor powders as well as undegraded and 144 h electron degraded Y₂SiO₅:Ce pulsed laser deposited (PLD) thin films. The two Ce 3d peaks positioned at 877.9 ± 0.3 and 882.0 ± 0.2 eV are correlated with the two different sites occupied by Ce in the Y₂SiO₅ matrix. Ce replaced the Y in the two different sites with coordination numbers of 9 and 7. The two Ce 3d XPS peaks obtained during the thin film analysis were also correlated with the luminescent mechanism of the broad band emission spectra of the Y₂SiO₅:Ce X₁ phase. These two different sites are responsible for the two main sets of cathodoluminescent (CL) and photoluminescence (PL) peaks situated at wavelengths of 418 and 496 nm. A 144 h electron degradation study on the Y₂SiO₅:Ce thin film yielded an increase in the CL intensity with a second broad emission peak emerging between 600 and 700 nm. XPS analysis showed the presence of SiO₂ on the surface that formed during prolonged electron bombardment. The electron stimulated surface chemical reaction (ESSCR) model is used to explain the formation of this luminescent SiO₂ layer.     

Simultaneous three-photon absorption induced ultraviolet upconversion in Pr:Y2SiO5 crystal by femtosecond laser irradiation

Near-infrared to ultraviolet upconversion luminescence was observed in the Pr³⁺:Y₂SiO₅ crystal with 120 fs, 800 nm infrared laser irradiation. The observed emissions at around 270 nm and 305 nm could be assigned to 5d → 4f transitions of Pr³⁺ ions. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to simultaneous three-photon absorption induced upconversion luminescence.     

Influence of calcining temperature on photoluminescence and thermal quenching in europium-doped Y2SiO5 using the MOD process

The crystalline Eu_0.25Y_1.75SiO₅ (EYSO) fine powders were prepared using metallorganic decomposition process, in which the pure X₁- and X₂-Y₂SiO₅ phases were obtained by calcining at temperatures from 850°C to 1600°C. The influence of calcining temperature on photoluminescence (PL) and thermal quenching were systematically investigated from room temperature to 573 K for the first time. As a consequence, the X₂-EYSO was higher in light emission intensities than the X₁-EYSO, but the X₁-EYSO possessed better temperature dependence of PL. The phase structure had a significant effect on the light emission intensity and energy as well as its temperature characteristics in the EYSO.     

Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the Tm^3＋：Lu2SiO5 （Tm：LSO） crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm：LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm：LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm：LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm.     

Synthesis of Y2Si2O7:Eu nanocrystal and its optical properties

Nanocrystalline Y₂Si₂O₇:Eu phosphor with an average size about 60 nm is easily prepared using silica aerogel as raw material under ultrasonic irradiation and annealing temperature at 300-600 °C and this nanocrystalline decomposes into Y₂O₃:Eu and silica by heat treatment at 700-900 °C. The excitation broad band centered at 283 and 254 nm results from Eu³⁺ substituting for Y³⁺ in Y₂Si₂O₇ and Y₂O₃/SiO₂, respectively. Compared with Y₂O₃:Eu/SiO₂ crystalline, the PL excitation and emission peaks of Y₂Si₂O₇:Eu nanocrystalline red-shift and lead to the enhance of its luminescence intensity due to the different chemical surroundings of Eu³⁺ in above nanocrystallines. The decrease of PL intensity may be ascribed to quenching effect resulting from more defects in Y₂O₃:Eu/SiO₂ crystalline.     

激光吸收铒掺杂上转换材料的光谱特性实验分析

采用湿化学法制备了铒掺杂氧化钇上转换纳米粉体材料.研究了不同掺杂浓度、掺杂元素种类对材料显微结构、物相组成和光谱特性的影响.结果表明,通过控制掺杂元素的种类、掺杂浓度可以实现对光谱性能（包括光谱反射系数和上转换光谱）的调控.实验表明,该材料对106 μm激光具有较好的吸收性能. 关键词： 铒掺杂氧化钇纳米粉体 上转换材料 激光与红外复合隐身 光谱反射系数     

Submillimeter wave ESR measurements of metamagnetic Y2Cu2O5

Submillimeter wave ESR system in Kobe University is presented. It covers the frequency region from 60 to 383GHz and can apply the pulsed magnetic field up to 30T. The measurement of Y₂Cu₂O₅ single crystals using our system is presented.     

Silica-coated Y2O3:Eu nanoparticles and their luminescence properties

Crystalline Y₂O₃:Eu is of paramount significance in rare earth materials and research on luminescence spectra. In this work, the nanocrystalline Y₂O₃:Eu was coated with silica by a facile solid state reaction method at room temperature. The transmission electron microscope (TEM) photographs showed that the prepared Y₂O₃:Eu particle is polycrystalline with the size of 20 nm, the size of silica-coated particle is about 25 nm. The XPS spectra indicated that the silica layer is likely to interact with Y₂O₃:Eu by a Si-O-Y chemical bond. The luminescence spectra showed that the intensity of ground samples is lower than that of unground ones, the intensity of silica-coated phosphors is higher than that of the ground samples, while almost the same as that of the unground ones. Therefore, the silica coating decreases the surface defects of nanoparticles of the nanocrystalline Y₂O₃:Eu, thus increasing their luminescent intensity.