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1.
C3N4 films have been synthesized on both Si and Ft substrates by microwave plasma chemical vapor deposition (MPCVD) method. X-ray spectra were calculated for single phase α-C3N4 and β-C3N4 respectively. The experimental X-ray spectra of films deposited on both Si and Pt substrates showed all the strong peaks of α-C3N4 and β-C3N4 so the films are mixtures of α-C3N4 and β-C3N4. The N/C atomic ratio is in the range of 1.0–2.0. X-ray photoelectron spectroscopy (XPS) analysis indicated that the binding energy of Is and N ls are 286.2 eV and 399.5 eV respectively, corresponding to polarized C-N bond. Fourier transform infrared absorption (FT-IR) and Raman spectra support the existence of C-N covalent bond in the films. Nano-indentation hardness tests showed that the bulk modulus of a film deposited on Pt is up to 349 GPa  相似文献   

2.
A successful experimental synthesis of pure crystalline β- and α-C3N4 films on Si(100) substrate was carried out by bias-assisted hot filament chemical vapor deposition (bias-HFCVD). It is found that a mixed-phase C3-I-SixNy buffer layer was formed between the Si substrate and the C-N film. A “lattice match selection” was proposed to study the growth mechanism of C3N4 clusters composed of many crystal columns with hexagonal facets. Project supported by the National Natural Science Foundation of China and the Chinese Academy of Sciences.  相似文献   

3.
Single C3N4 crystals with 1–3 μ in length and 300 nm in cross area was obtained on nickel substrate. The results rule out the uncertainty of the experimental lattice parameters caused by C-Si-N phase when the growth was on silicon. The X-ray diffraction and transmission electron microscopy with selective-area electron diffraction give the lattice constantsa = 0.624 nm andc = 0.236 nm for β-C3N4, and α=0. 638 nm andc = 0.464 8 nm for α-C3N4, which are respectively 2.5% and 1.3% lower than those of the latest first-principle calculations. An N:C ratio of 1.30–1.40 was determined by energy dispersive X-ray. Based on the experimental lattice constants, the bulk modulus of the obtained β-C3N4 are in the region of 425–445 GPa.  相似文献   

4.
C3N4 crystals with the size of several micrometers have been synthesized from C3N4H4 in the presence of nickel-based alloy or cobalt as catalyst under high pressure of 7 GPa and temperature of about 1400°C for 10 min. Scanning electron microscopy, energy-disperse X-ray analysis, and X-ray diffraction were used to examine the grown crystals. The general rule on selecting the starting materials for synthesis of carbon nitride crystals at high pressures and high temperatures is suggested.  相似文献   

5.
The structure and magnetic properties of Fe- N thin films   总被引:1,自引:0,他引:1  
200 nm Fe-N thin films deposited on glass substrates by RF sputtering were vacuum annealed at 250-350℃ under 12000 A/m magnetic field. Heat treatment was effective in improving the soft magnetic properties of the Fe-N film. When the nitrogen content was in the range of 5-7 at. %,the thin films consisted of α′ + α" after heat treatment and had excellent soft magnetic properties of 4πMs = 2.4 T, Hc < 80 A/m, μr = 1500 under 2-10 MHz. The properties of the films meet the needs of a write head material used in the dual element GMR/inductive heads. The fromation mechanism and lattice constants of the α′ phase in Fe-N thin film are different from Jack's results obtained from γ→α′transformation in bulk samples. The linear relationship between a, c and Ca'N for thin film was obtained asc = 2. 866+ 1.559Ca'N,a = 2.866 + 0.181Ca'N.``  相似文献   

6.
Surface morphologies and microstructures of C60/Ag composite films were studied by atomic force microscope (AFM) and transmission electron microscope (TEM). The surface roughness depended on the substrate temperature, and the transition of surface morphology of rough→smooth→rough was observed when the substrate temperature increased from −50 to 120°C. Although the rms values are similar, the scaling properties of the thermal roughing and the kinetic roughing surfaces are quite different. The relations between the scaling properties, microstructures and roughing mechanisms are discussed based on the AFM and TEM results. Project supported by the National Natural Science Foundation of China (Grant No. 59529204).  相似文献   

7.
Dynamic simulation on the preparation process of thin films by pulsed laser   总被引:1,自引:0,他引:1  
An ablation model of targets irradiated by pulsed laser is established. By using the simple energy balance conditions, the relationship between ablation surface location and time is derived. By an adiabatic approximation, the continuous-temperature condition, energy conservation and all boundary conditions can be established. By applying the analytical method and integral-approximation method, the solid and liquid phase temperature distributions are obtained and found to be a function of time and location. The interface of solid and liquid phase is also derived. The results are compared with the other published data. In addition, the dynamics process of pulsed laser deposition of KTN (Kta0.65Nb0.35O3) thin film is simulated in detail by using fluid dynamics theory. By combining the expression of the target ablation ratio and the dynamic equation and by using the experimental data, the effects of laser action parameters on the thickness distribution of thin film and on the thin film component characteristics are discussed. The results are in good agreement with the experimental data.  相似文献   

8.
We show that the N=3 harmonic superfield equations of motion are invariant with respect to the fourth supersymmetry. We also use the SU(3) harmonics to analyze a more flexible form of superfield constraints for the Abelian N=4 vector multiplet and its N=3 decomposition. An unusual alternative representation of the N=4 supersymmetry is realized on infinite multiplets of analytic superfields in the N=3 harmonic superspace. An integer-valued parameter playing the role of a discrete coordinate parameterizes U(1) charges of superfields in these multiplets. Each superfield term of the N=3 Yang–Mills action has an infinite-dimensional N=4 generalization. The gauge group of this model contains an infinite number of superfield parameters.  相似文献   

9.
A graph is (k1,k2)-colorable if it admits a vertex partition into a graph with maximum degree at most k1 and a graph with maximum degree at most k2. We show that every (C3,C4,C6)-free planar graph is (0,6)-colorable. We also show that deciding whether a (C3,C4,C6)-free planar graph is (0,3)-colorable is NP-complete.  相似文献   

10.
K3C60 single crystal film was prepared on the cleaved (111) surface of C60 single crystal. Synchrotron radiation angle-resolved photoemission spectra were measured at normal emission with sample temperature at ~150K. Up to four subpeaks of LUMO-derived band were observed. These sub-peaks exhibit distinct energy dispersions which resemble in general the theoretical ones calculated for K3C60 at low temperature with the so-called one-dimensional disordered structure. But there is large deviation of experimental sub-band intervals from the theoretical values. This result is meaningful for the studies of the physical properties of alkali-doped C60 solids, e.g. the mechanism for superconductivity.  相似文献   

11.
We consider an elastic rod, modeled as a curve in space with an impenetrable surrounding tube of radius ρ, subject to a general class of boundary conditions. The impossibility of self-intersection is then imposed as a family of scalar constraints on the physical separation of nonlocal pairs of points on the rod. Thus, the usual variational formulation of energy minimization is considered in a context of nonconvex, nonsmooth optimization. We show the existence of minimizers within suitably defined homotopy classes associated with both the centerline and the frame along the rod. The principle results are then concerned with derivation of first-order necessary conditions for optimality and some consequences of these for the contact forces and for regularity.  相似文献   

12.
Graph colorability (COL), is a typical constraint satisfaction problem to which phase transition phenomena (PTs), are important in the computational complexity of combinatorial search algorithms. PTs are significant and subtle because, in the PT region, extraordinarily hard problem instances are found, which may require exponential-order computational time to solve. To clarify PT mechanism, many studies have been undertaken to produce very hard instances, many of which were based on generate-and-test approaches. We propose a rather systematic or constructive algorithm that repeats the embedding of 4-critical graphs to arbitrarily generate large extraordinarily hard 3-colorability instances. We demonstrated experimentally that the computational cost to solve our generated instances is of an exponential order of the number of vertices by using a few actual coloring algorithms and constraint satisfaction algorithms.  相似文献   

13.
Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.  相似文献   

14.
Transparent conducting ZnO: Al thin films with good adhesion and low resistivity have been prepared on organic substrates and Corning 7059 glass substrates by r.f. magnetron-sputtering technique at low substrate temperature (25–210°C). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed. High quality films with resistivity as low as 1.0 x 10-3Ω·cm and 8.4 x 10-4Ω·cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.  相似文献   

15.
The synthesis of 3 : 4 dihydro 2H-pyrano(2, 3-b) quinolines is described.  相似文献   

16.
Introduction 'The physics of thin film growth has been a topic of much current illterest. The application ofimproved and novel surfaCe science techniques such as field ion microscopy (FIM) and scanningtunneling microscopy (STM), has indeed revealed many atomic details of the film growthlll.A variety of fractal and dendritic structures have been observed in thin-film systemst2-7]. Forexample, STM images Of An on Ru(0001) grown at room temperatureI2] and Pt or Ag growthon Pt(111) at low…  相似文献   

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19.
Epitaxial growth of the La0.5Sr0.5 3(LO) thin films has been realized on Lin3, SrTiC3 and MgO substrates by pulsed laser deposition. The epitaxial growth behavior and the electrical transport properties of these films were studied systematically. The temperature dependencies of the resistivity of the film have been determined. Studies indicate that close dependencies exist between the crystal structures and the electrical transport properties of the epitaxial LSCO films, and that the epitaxial thin films are of low resistivity and metallic conductive features. The epitaxial films deposited on the LaA103 substrates at about 700 °C possess the optimal properties compared with the others. Discussions of the dependencies and the mechanisms of the epitaxial structures on the electrical transport properties of the LSCO films have been made. Project supported by the National Natural Science Foundation of China (Grant No. 19574003 and No. 19674001).  相似文献   

20.
Counting the number of internal intersection points made bythe diagonals of irregular convex polygons where no three diagonalsare concurrent is an interesting problem in discrete mathematics.This paper uses an iterative approach to develop a summationrelation which tallies the total number of intersections, andshows that this total can be expressed as a simple sum of products.This iterative approach also motivates solutions for the numberof internal regions and number of line segments produced bythe diagonals  相似文献   

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