BaFCl:Eu2+中F色心的浓度和光激励截面与温度和紫外线的辐照波长的关系

本文研究了BaFCl:Eu²⁺在不同波长的紫外线辐照和不同的测定温度下的光激励发光性质.通过改变激励方式及激励光的扫描方向,给出了BaFCl:Eu²⁺光激励发光过程中,两种F色心的浓度比值和光激励截面比值与紫外线辐照波长和测定温度的关系.同时我们还研究了在激励读出过程中,对应两种F色心的光激励发光强度与激励温度的关系,并且给出了相应于F(Cl^-)心的热激活能.     

BaFCl∶Eu~（2＋）中F色心的浓度和光激励截面与温度和紫外线的辐照波长的关系

本文研究了ＢａＦＣｌ∶ＥＵ（２＋）在不同波长的紫外线辐照和不同的测定温度下的光激励发光性质．通过改变激励方式及激励光的扫描方向，给出了ＢａＦＣｌ∶Ｅｕ（２＋）光激励发光过程中，两种Ｆ色心的浓度比值和光激励截面比值与紫外线辐照波长和测定温度的关系．同时我们还研究了在激励读出过程中，对应两种Ｆ色心的光激励发光强度与激励温度的关系，并且给出了相应于Ｆ（Ｃｌ－）心的热激活能．     

BaFCl:Eu2+光激励读出过程中两种F色心的差异

研究了紫外线辐照下BaFCl:Eu²⁺的光激励发光性质.测定了在不同温度下经紫外线辐照后的光激励谱,变化范围为10—300K同时研究了两种F色心的光激励发光强度在激励读出过程中随温度的变化关系.分析了光激励谱产生差异的原因. 关键词：     

Luminescence studies of thallium co-doped KBr:Eu2+ powder phosphors

In this study, photoluminescence (PL) and photostimulated luminescence (PSL) properties in KBr:Eu²⁺, Tl⁺ powder phosphors are reported. PL emission spectra of these Tl⁺ co-doped KBr:Eu²⁺ phosphors show four overlapping bands around 310, 325, 360 and 375 nm in addition to the characteristic of Eu²⁺ ions at 420 nm. These additional short wavelength bands were attributed to centres involving Tl⁺ ions. The decrease in PSL intensity of γ-irradiated KBr:Eu²⁺, Tl⁺ powder phosphors with Tl⁺ concentration and the absence of thallium emission bands in PSL were attributed to the efficient electron trapping by Tl⁺ ions during irradiation.     

Mechanism of photostimulated luminescence: BaFCl:Eu2+

We propose a new parallel model based on the analysis of photostimulated luminescence (PSL) process and existing theoretical models. While solving this model, the general expression for PSL is gained. BaFCl:Eu²⁺, one of the PSL materials, is prepared and a series of spectra are measured. We compared the theoretical and experimental results in terms of the decay process, the difference between two kinds of color centers and the relationship between irradiation dose and luminescent intensity. Supported by the National Nature Science Foundation of China.     

F／Cl比与Eu~（2＋）：BaFCl中F色心的浓度和光激励截面的关系

研究了Ｅｕ（２＋）：ＢａＦｘＣｌ２在紫外线辐照下的光激励发光。通过改变激励方式及激励光的扫描方向，给出了Ｅｕ（２＋）：ＢａＦｘＣｌ２－ｘ光激励发光过程中，两种Ｆ色心的浓度比值与光激励截面比值的测定方法。利用这种测定方法，进一步研究了两种Ｆ色心的浓度比值和光激励截面比值与Ｆ／ＣＩ比值的关系。     

The Measurements of Photostimulated Luminescence in Alkali Doped BaFBr:Eu2☎ at Liquid Nitrogen Temperature

Considerable increase of the photostimulated luminescence (PSL) intensity and red shift of the excitation spectrum was obtained by alkali doping of BaFBr:Eu^2? crystals [1]. The band of the F_A(Br^?) centers about 0.1 eV shifted to low energy side against the “normal” F(Br^?) centers. The F_A(Br^?) centers are destroyed after heating to 330 K.     

The role of hydrogen- and hydroxyl-doping in CsBr:Eu

Hydrogen- and hydroxyl-doped CsBr:Eu²⁺ storage phosphors were investigated by photostimulated luminescence (PSL) spectra, absorption spectra and PSL lifetime spectra. Hydrogen- and hydroxyl-doping plays an active role related to the trap centers in CsBr:Eu²⁺ storage phosphors. A sharp increase in the PSL yield was observed for non-hydroxyl-doped CsBr:Eu²⁺ annealed in 5%H₂+95%Ar atmosphere. For hydroxyl-doped CsBr:Eu²⁺, the PSL lifetime (361 ns) is obviously shorter than that of typical CsBr:Eu²⁺ storage phosphors.     

Photostimulated luminescence in BaX 2 :Eu 2+ (X=Br,Cl) X-ray storage phosphors

The photostimulated luminescence (PSL) effect in BaX 2 :Eu 2+ (X=Br, Cl) is comparable to that observed in BaFBr:Eu 2+ which is used in commercial X-ray storage phosphor screens. After X-irradiation the PSL stimulation spectra of BaX 2 :Eu 2+ (X=Br, Cl) single crystals are identical to the F centre absorption spectra, i.e. the F centres are the PSL-active electron trap centres. The nature of the hole centres is still unknown. The PSL response time of about 0.70 v s is within experimental error of 0.02 v s identical to the Eu 2+ radiative lifetime, whereas in BaCl 2 :Eu 2+ the PSL response time is 0.60 v s, and thus longer than the Eu 2+ radiative lifetime of 0.47 v s.     

Correlation of the dielectric properties and the PSL-sensitivity in CsBr:Eu image plates

The X-ray storage phosphor CsBr:Eu is in the focus of research because of its very high sensitivity of the photostimulated luminescence (PSL). In this contribution, we demonstrate a correlation of the dielectric properties of this material with the PSL-efficiency. The high experimental dielectric constant of the image plate correlates with the high sensitivity of the storage phosphor what has been shown for both thermal annealing and high doses X-ray irradiation. It is our hypothesis that correlation between the dielectric material properties and PSL is due to a stable polarization or, more generally, electric dipoles in the material that improve either the separation of electrons and holes during their generation or their trapping.     

Mn掺杂的碱土金属硫化物红外光激励发光及光存储性能的比较

采用硫化助熔剂法制备了SrS：Eu,Mn和CaS：Eu,Mn荧光粉。与CaS相比,SrS基质材料的光激励发光峰位于610 nm,比前者更接近视觉敏感区。比较了不同基质材料的存储光和量,SrS基质材料存储能力强于CaS。同时Mn2+掺杂增大了碱土金属硫化物被存储的光子数量,有利于提高材料的存储性能。     

Effect of isoelectronic impurities K<Superscript>+</Superscript> and I<Superscript>−</Superscript> on luminescence of CsBr:Eu<Superscript>2+</Superscript> crystals

We have investigated the photoluminescence (PL) and photostimulated luminescence (PSL) spectra at 300 K to study the effect of isoelectronic impurities K⁺ and I⁻ on the formation and energy structure of Eu²⁺-V_Cs isolated dipole centers and aggregate centers in the form of single crystals of CsEuBr₃ in CsBr:Eu²⁺ single crystals. We have shown that K⁺ and I⁻ impurities in a concentration of 5 mol% do not have a substantial effect on the energy spectrum of isolated dipole centers in CsBr:Eu²⁺ single crystals and the processes for the formation of such centers during growth of CsBr:Eu single crystals from the melt by the Bridgman method. We have established that in Cs_0.95K^0.05Br:Eu²⁺, more favorable conditions are realized for the formation of aggregate centers than in CsBr:Eu²⁺ and CsBr^0.95K^0.05Br:Eu²⁺ single crystals. So in order to improve the storage properties of phosphors based on CsBr:Eu²⁺, in particular for increasing the efficiency of PSL excitation, it is expedient to dope them with K⁺ impurity in a concentration up to 5 mol%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 627–630, September–October, 2007.     

Al3+掺杂BaFBr:Eu2+中F(Br-)心的性质

作为光激励发光的首选材料BaFBr:Eu^2 ，在其中掺杂一定量的Al^3 后，其光激励发光谱向长波方向发生了较大的红移现象，红移的机理是掺杂的Al^3 离子取代了BaFBr:Eu^2）晶格中的Ba^2 离子，且处于F（Br^-）心的次近邻位所致。本文利用喇曼光谱和电子顺磁共振谱对受掺杂Al^3 微扰的F（Br^-)心的结构进行了研究，首次在喇曼光谱的高频移区观测到了由于掺参Al^3 所引起的新结构的产生，通过电子顺磁共振谱表征了在BaFBr:Eu^2＋中Al^3 与F（Br^-）心的相对位置，并且得出F（Br^-)心与OF^-心存在着空间相关性。     

Thermo-and photostimulated luminescence of CaI2: Tl and CaI2: Pb crystals

Thermo-and photostimulated luminescence of CaI₂: Tl and CaI₂: Pb scintillation crystals under optical and X-ray excitation is studied. It is shown on the basis of the results obtained with account for the data of studies of photo-and X-ray-luminescent properties of these scintillators that Tl⁺ and Pb²⁺ ions form complex capture centers with host defects. These centers are responsible for the thermostimulated luminescence in the temperature range of 150–295 K, and the centers of charge carrier trapping are spatially separated from the centers of recombination emission. An assumption is made that thermo-and photostimulated luminescence of CaI₂: Tl and CaI₂: Pb crystals under optical excitation is observed mainly due to the delocalization of charge carriers from hydrogen-containing centers responsible for the excitation band at 236 nm and the photoluminescence of CaI₂ with a maximum at 395 nm. The luminescence of CaI₂: Tl crystals in the 510-nm band and CaI₂: Pb crystals in the 530-nm band is determined by the radiative decay of near-activator excitons.     

<Superscript>10</Superscript>B<Superscript>+</Superscript>-ion implantation into photoresist

100-keV ¹⁰B⁺ ions were implanted into photoresist in different directions at a fluence of 1×10¹⁴ cm^-2, and their depth distribution was determined by means of the neutron depth profiling technique. In no case were the projectile ions found to come to rest according to their predicted implantation profiles. Instead, they are always found to undergo considerable long-range migration. During the irradiation process this motion appears to be enhanced by the radiation damage, and during the subsequent annealing steps one deals with thermal diffusion. The implant redistribution is always found to be governed strongly by the self-created damage, insofar as both electronic and nuclear defects in the polymer act as trapping centers. The implant redistribution shows a pronounced directional dependence, essentially as a consequence of the spatial distribution of the electronic energy loss. The changes of the nuclear defect distribution during thermal annealing are studied by a specially developed tomographic method in three dimensions. PACS 61.72.Ww; 61.80.Jh; 61.41.+e; 66.30.-h; 66.30.Jt     

Thermoluminescence and photoluminescence of LiNaSO4:Eu irradiated with 24 and 48 MeV Li ion beam

Thermoluminescence (TL) of LiNaSO₄:Eu phosphor, irradiated with 24 and 48 MeV ⁷Li ions at different fluences in the range 5×10⁹-1×10¹² ion/cm², has been studied. The samples from the same batch were also exposed to γ-rays from a Cs¹³⁷ source for comparative studies. The TL glow curves of the materials, irradiated with ⁷Li ions, have similar structures to that of γ-irradiated sample. They have a simple structure with a prominent peak at 412 K along with small one at around 481 K. The intensity ratios of 412-481 K peaks have been observed to increase with fluence increasing, while that of γ-irradiated sample shows a reverse trend. This could be attributed to the changes in the recombination center populations due to ⁷Li ions, that have been implanted inside the matrix of LiNaSO₄:Eu, during irradiation and might also act as a source for new trapping and luminescent centers. The implantation has been confirmed by TRIM calculations. The penetration depths (where the ion comes to rest) are found to be 145 and 463 μm corresponding to 24 and 48 MeV ion beam energies, respectively, which are less than the thickness of the sample chips (∼800 μm). The efficiencies of LiNaSO₄:Eu to 24 and 48 MeV ⁷Li ions measured relative to γ-rays of Cs¹³⁷ are found to be 0.007 and 0.024, respectively. Theoretical analysis of the glow curves of the samples irradiated by ⁷Li ions and γ-rays were done by glow curve deconvolution method to determine trapping parameters of various peaks. The experimentally observed linearity/sublinearity has been discussed in the frame of track interaction model. Photoluminescence studies in the ⁷Li ions irradiated and un-irradiated samples show that europium ions have incorporated in the host in their divalent (emission at 440 nm) as well as trivalent (emissions at 594, 615 and 700 nm) forms. The intensities of the emission bands of these ions have been observed to increase with fluence increasing.     

Photoluminescence properties of SHI induced F2 and F3 color centers in nano-granular LiF thin films

Photoluminescence (PL) properties of swift heavy ions-induced F₂ and F₃⁺ color centers in nano-granular lithium fluoride (LiF) thin film were studied. LiF films were deposited on glass and silica substrates and irradiated with various ion species (Ag, Ni and Au) at different irradiation temperatures. The role of ion species, their fluence and the irradiation temperature on the PL intensity of color centers induced in LiF thin films is discussed.     

电子俘获光存储材料BaLiF3:Eu2+的光激励发光及光存储性质研究

利用高温固相反应法制备了混晶状的BaLiF3:Eu2 样品.其紫外光激发的发射峰与光激励发光峰均在410 nm处,属于Eu2 的5d-4f跃迁发光.光激励峰位于660 nm,因而可以配用简单廉价的氦氖激光器.根据光谱特征给出了光激励发光的简单机理.测量了该材料光激励发光衰减性能,结果表明BaLiF3:Eu2 存储的信息可以方便地擦除掉.该材料具有优良的光激励发光特性,是一类很有发展前途的电子俘获光存储材料.     

Eu^2＋：BaFCl光激励发光衰减的研究

制备了系列材料Ｅｕ＾２＋：ＢａＦＣｌ，测量了其光激励发光的衰减曲线，基于隧穿模型，建立了描述隧穿过程的数学模型，得出了光激励发光衰减规律，并将结果与实验进行了比较。     

Irradiation effects in CaF2 probed by Raman scattering

The formation conditions and dynamics of Ca colloids and point defects that appear in irradiated single crystals of CaF₂ were investigated by Raman spectroscopy. The intensity changes in the Raman spectra because of the presence of different concentrations of point defects and Ca colloids that emerged in CaF₂ after irradiation with 2.2 GeV Au ions were used to study their distribution and stability under illumination with three laser wavelengths (473, 532 and 633 nm) at different output powers (2 to 200 mW). A damage saturation at a fluence of 6 × 10¹¹ ion cm⁻² was observed. The dependence of the spectral changes on the ion fluence can be described by a core/halo damage cross‐section model. A radius of 13–18 nm was obtained for the outer (halo) cylinder, in agreement with previous swelling studies. Illuminations of irradiated samples with blue (473 nm) and green (532 nm) lasers were found to be extremely efficient in bleaching the samples, while illumination with a red (633 nm) laser did not lead to a sample recovery. This indicates that the bleaching process is governed by recombination of point defects that have to overcome an energy barrier. Typical time constants for the processes involved are presented. Copyright © 2016 John Wiley & Sons, Ltd.