Luminescent properties and energy transfer processes in Ce–Tb doped single crystalline film screens of Lu-based silicate,perovskite and garnet compounds

The work is dedicated to the development of scintillating screens based on the single crystalline films (SCF) of Ce,Tb doped Lu-based silicates, perovskites and garnets grown by the liquid phase epitaxy method. We confirm in this work the presence of the Ce → Tb energy transfer in LSO and LuAP hosts. We also show that in Ce–Tb doped LuAG SCF, the effective Tb → Ce energy transfer is observed. This results in increasing the light yield of the luminescence of double doped LuAG:Ce,Tb SCF up to 25–30% with respect to single Ce doped (Y,Lu)AG SCF counterparts at optimal ratio of Ce/Tb ions.     

Imaging performance and light emission efficiency of Lu<Subscript>2</Subscript> SiO<Subscript>5</Subscript>:Ce (LSO:Ce) powder scintillator under X-ray mammographic conditions

The aim of the present study was to measure the imaging transfer characteristics and the luminescence efficiency (XLE) of a Lu₂SiO₅:Ce (LSO:Ce) powder scintillator for use in X-ray mammography detectors. An LSO:Ce powder scintillating screen, with a coating thickness of 25 mg/cm², was prepared in our laboratory. The imaging performance of the screen was assessed by experimental determination of the modulation transfer function (MTF) and the detective quantum efficiency (DQE) as well as single index image quality parameters such as noise equivalent pass band (Ne) and informational efficiency (n _I). A theoretical model, describing radiation and light transfer, was fitted to experimental MTF values in order to estimate optical properties of the scintillator. Screen irradiation was performed under exposure conditions employed in mammographic applications (27 kVp, 63 mAs). MTF was determined by the square wave response function (SWRF) method. Results showed that LSO:Ce exhibits high MTF and DQE values, which are comparable to those of the commercially used Gd₂O₂S:Tb. Considering our image quality parameters and luminescence efficiency results as well as the fast response of the LSO:Ce scintillator screen (40 ns), this material can be considered for use in X-ray mammographic detectors.     

Fabrication, structure and luminescence properties of polycrystalline Tb-doped Lu2SiO5 films by Pechini sol–gel method

Tb³⁺-doped lutetium oxyorthosilicate (Tb:Lu₂SiO₅, LSO) films have been successfully fabricated on carefully cleaned silicon (1 1 1) substrates by Pechini sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD), photoluminescence (PL) spectra and atomic force microscopy (AFM) were employed to characterize the resultant films. XRD patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition from A-type LSO to B-type LSO occurred at 1100 °C. The AFM observation revealed that the phosphor films were uniform and crack-free, consisting of closely packed grains with an average size of 200–300 nm. The PL spectra showed the characteristic emission ⁵D₄ → ⁷F_J (J = 3–6) for Tb³⁺, The lifetime of Tb³⁺ in Tb:LSO films was 2.33 ms. The effect of heat-treatment temperature on the luminescent properties was also investigated.     

Comparison of Lu3Al5O12:Pr and Bi4Ge3O12 scintillators for gamma-ray detection

The scintillation properties of Lu₃Al₅O₁₂:Pr³⁺ (LuAG:Pr) single crystal grown by the Czochralski method with praseodymium concentration of 0.19 mol% were investigated. For a comparison, a good quality Bi₄Ge₃O₁₂ (BGO) single crystal grown by Bridgman method was also studied. The light yield and energy resolution were measured using photomultiplier tube (XP5200B PMT) readout. Moderate light yield of 15,900 photons per MeV was measured for the LuAG:Pr(0.19%) crystal. For 662 keV gamma rays (¹³⁷Cs source), an energy resolution of 6.5% obtained for LuAG:Pr(0.19%) is much better than that of 9.0% obtained for BGO. The light yield non-proportionality and energy resolution versus energy of gamma rays were measured and the intrinsic resolution of the crystals was determined after correcting the measured energy resolution for PMT statistics. The LuAG:Pr(0.19%) showed a good proportionality of the light yield within 5% over the energy range from 1274.5 keV down to 32 keV, which is much better than that of 14% for BGO. The photofraction was determined at 320 and 662 keV for both crystals and compared with the ratio of the cross-sections for the photoelectric effect to the total one calculated using WinXCOM program.     

Synthesis and luminescence properties of Tb:NaGd(WO4)2 novel green phosphors

Tb³⁺:NaGd(WO₄)₂ (Tb:NGW) phosphors with different Tb³⁺ concentrations have been synthesized by a mild hydrothermal process directly without further sintering treatment. X-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence excitation and emission spectra and decay curve were used to characterize the Tb:NGW phosphors. XRD analysis confirmed the formation of NGW with scheelite structure. SEM study showed that the obtained Tb:NGW phosphors appeared to be nearly spherical and their sizes ranged from 1 to 1.5 μm. The excitation spectra of these systems showed an intense broad band with maximum at 270 nm related to the O→W ligand-to-metal charge-transfer state. Photoluminescence spectra indicated the phosphors emitted strong green light centered at 545 nm under UV light excitation. Analysis of the photoluminescence spectra with different Tb³⁺ concentrations revealed that the optimum dopant concentration for Tb³⁺ is about 15 at% of Tb³⁺ ions in Tb:NGW phosphors.     

Scintillation and optical behavior of GaN nanowires in the presence of low-energy X-ray photons: A Geant4 simulation

GaN nanowires were studied as a possible candidate for use in the future development of X-ray scintillator detectors with high spatial resolution using a Monte Carlo simulation. The assessment was performed from the optical response perspective. The ability of such a nanowire to act as scintillating fibers was simulated using Geant4 code. The optimal dimensions of the nanowire (considering practical limitations) to achieve the best optical guiding effect were also determined. Moreover, the energy response of the nanowire was investigated for the design of a suitable external photodetector. To more accurately study the proposed structure, a scintillating screen containing approximately 2,000,000 nanowires was simulated in a porous anodized alumina membrane (PAAM) with a hexagonal arrangement. Using these specifications, the spatial resolution and efficiency of the detector were precisely calculated. The results showed that the spatial resolution and efficiency of the detector were <1 μm and ∼17%, respectively.     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

Experiment research on ellipsoidal structure methane using the absorption characteristics of 3.31 μm mid-infrared spectroscopy

The intensity distribution of absorption spectroscopy of methane mid-infrared fundamental absorption bands, near-infrared combination band of v₂ + 2v₃ and overtone band of 2v₃ were discussed in details in this paper. Quantitative data showed that the absorption intensities of fundamental bands are twice larger than overtone bands, and three times larger than combination bands. Based on the methane 3.31 μm (v₃) fundamental absorption bands and differential signal disposal method, a rotational ellipsoidal light structure was designed using ordinary light source and detector to improve gas detection sensitivity. The experimental results of concentration detection showed that the precision of concentration measurement can reach 3% and detection sensitivity is 50 ppm. Meanwhile, experiment was performed to investigate the influence of temperature on mid-infrared absorption performance of methane and the experience curve of 3.31 μm (v₃) fundamental absorption signal depending on temperature and its rate of change was drawn.     

Upconversion luminescence dynamics of Er-doped fluoride crystals for optical converters

Erbium (Er)-doped fluoride crystals (YLF, BYF, CaF₂, etc.) are well-known as active media for solid-state lasers emitting in IR and VIS spectral domains, and as materials for efficient near-IR to VIS upconversion. In this paper, we report on the study of conversion of IR light from an ～1.5 μm spectral region to an ～1 μm spectral domain in low-phonon RE-doped fluoride crystals CaF₂ (RE=Er³⁺ Yb³⁺). Energy transfer processes taking place at selective pulsed and CW laser excitation are investigated experimentally. It is shown that in the CaF₂:RE crystals efficient conversion of IR radiation from the ～1.5 μm region to the ～1 μm region occurs, and these crystals are perspective for using in spectral converters for enhancing solar cell efficiency.     

10.6 μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide

Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 μm, 180 meV). However, whether 10.6 μm (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 μm infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film’s transmittance to 632.8 nm infrared light when the thin film is irradiate by CO₂ laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 μm laser. This indicates that 10.6 μm infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution.     

Luminescence and scintillation properties of advanced Lu3Al5O12:Pr3+ single crystal scintillators

In this paper we present the luminescence and scintillation properties of Lu₃Al₅O₁₂:Pr (LuAG:Pr) single crystals with Pr³⁺ concentration of 0.13 wt %, grown by the Czochralski method. The light yield and energy resolution were measured under 662 keV γ-ray excitation. The dominant emission band peaking at 310 nm with a shoulder at 370 nm was observed in the photoluminescence spectrum. High light yield of 24,500 ph/MeV and an energy resolution of 5.3 % were obtained for a 6 × 6 × 2 mm³ LuAG:Pr sample. Light yield dependence on sample height and shaping time was measured. The estimated photofraction in pulse height spectrum and total mass attenuation coefficient at 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program.     

A size-dependent microparticle capture and release chip using concentric membrane ring barriers

We present a size-dependent microparticle separation chip where different sized slit gaps are formed around a central inlet by membrane ring barriers, concentrically arranged, and adjusted with a single pneumatic source. Previous microparticle separation methods, using multiple filters with different pore sizes, require additional structures and processes to release microparticles after they are captured in the filter. In addition, those methods often result in particle loss due to clogging of the fixed pore filters. We suggest a microparticle separation chip capable of size-dependent capture and release without the particle loss. The present separation chip has four concentrically arranged membrane rings (b₁ ∼ b₄) with a thickness of 90 μm and widths of 182 μm, 188 μm, 194 μm, and 200 μm, respectively, which form slit gaps estimated to be 11.2 μm, 9.5 μm, 7.6 μm, and 5.8 μm, respectively, at the pneumatic pressure of 80 kPa. In the experiment, we demonstrated microparticle capture and release using two different sizes of PS (polystyrene) beads (diameter = 6.51 ± 0.43 μm and 10.32 ± 0.39 μm) immersed in 0.5% BSA (Bovine Serum Albumin) solution at a flow rate of 100 μl/min. At a pressure of 80 kPa, 10.32 μm and 6.51 μm-diameter beads were captured at ring barriers b₃ and b₄, respectively. Subsequently, at pressures of 65 kPa and 50 kPa, the 6.51 μm and 10.32 μm-diameter beads were respectively released from the outermost barrier (b₄). The capture and release efficiencies of 10.32 μm-diameter beads at the b₃ barrier were 91.7 ± 16.7% and 90.9 ± 8.1%, respectively. The purity of 10.32 μm-diameter beads at the b₃ barrier was 80.2 ± 6.2%. The capture and release efficiencies of 6.51 μm-diameter beads at the b₄ barrier were 100.0 ± 0.0% and 97.1 ± 4.0%, respectively. The purity of 6.51 μm-diameter beads at the b₄ barrier was 91.8 ± 2.9%. We have verified that different sizes of captured microparticles were released sequentially by gradually reducing the pressure. The present chip, having concentric membrane ring barriers which can form different sized slit gaps using a single pressure source, is simply capable of not only size-dependent microparticle capture, but also release in size order without particle clogging.     

Luminescent features of sol–gel derived rare-earth multi-doped oxyfluoride nano-structured phosphors for white LED application

Rare-earth doped oxyfluoride 75SiO₂:25PbF₂ nano-structured phosphors for white-light-emitting diodes were synthesized by thermal treatment of precursor sol–gel derived glasses. Room temperature luminescence features of Eu³⁺, Sm³⁺, Tb³⁺, Eu³⁺/Tb³⁺, and Sm³⁺/Tb³⁺ ions incorporated into low-phonon-energy PbF₂ nanocrystals dispersed in the aluminosilicate glass matrix and excited with UV light emitting diode were investigated. The luminescence spectra exhibited strong emission signals in the red (600, 610, 625, and 646 nm), green (548 and 560 nm), and blue (485 nm) wavelength regions. White-light emission was observed in Sm/Tb and Eu/Tb double-doped activated phosphors employing UV-LED excitation at 395 nm. The dependence of the luminescence emission intensities upon annealing temperature and rare-earth concentration was also examined. The results indicated that there exist optimum annealing temperature and activator ion concentration in order to obtain intense visible emission light with high color rendering index. The study suggests that the nanocomposite phosphor based upon 75SiO₂:25PbF₂ host herein reported is a promising contender for white-light LED applications.     

Lu2O3:Tb,Hf storage phosphor

Lu₂O₃:Tb,Hf ceramics containing 0.1% of Tb and 0–1.5% of Hf were prepared in reducing atmosphere at 1700 °C and their thermoluminescence properties were systematically studied. For comparison Tb,Ca co-doped specimen was also fabricated and investigated. The Tb,Hf ceramics shows basically a single TL band located around 180 °C as found with heating rate of 15 °C/min. Ceramics singly doped with Tb show complex TL glow curves indicating the presence of traps of very different depths. On the other hand Tb,Ca co-doping is beneficial for the development of shallow traps with the main TL band around 70 °C. Hence, the aliovalent impurities, Ca²⁺ and Hf⁴⁺, strongly influenced the traps structure in Lu₂O₃:Tb ceramics, each of them in its own specific way. Isothermal decay of Lu₂O₃:Tb,Hf at 185 °C was recorded and its shape suggest that multiple hole trapping occurs in the Lu₂O₃:Tb,Hf ceramics. Due to the different traps depths the Lu₂O₃:Tb,Hf ceramics possess properties typical for storage phosphors, while Lu₂O₃:Tb,Ca is a persistent luminescent material rather.     

Behaviour of scintillators under XUV free electron laser radiation

Free electron lasers (FEL) are new generation accelerator-based short wavelength light sources providing high pulse intensity and femtosecond pulse duration, which enable investigation of interaction of elementary excitations in solids under extreme conditions. Using the FLASH facility of HASYLAB at DESY (Hamburg, Germany), we investigated the response of different materials with scintillating properties based on intrinsic emissions to the 25.6 and 13.8 nm FEL radiation by means of time-resolved luminescence spectroscopy. FLASH delivered single pulses of 25 fs duration having energy per pulse up to 30 μJ resulting in power densities of ～10¹² W/cm² on crystals. As a function of excitation density we observed the shortening of lifetime and non-exponential behaviour of emission decays in CaWO₄, while the emission spectra recorded are comparable to those obtained at conventional excitation sources.     

Luminescence properties of Ce-doped oxyorthosilicate nanophosphors and single crystals

In this work we investigate and compare the thermoluminescence (TL) and related luminescent properties of cerium-doped Lu₂SiO₅ (LSO), Gd₂SiO₅ (GSO), and Y₂SiO₅ (YSO) nanophosphors prepared by solution combustion synthesis (SCS) to the properties of their single crystal counterparts. Photoluminescence emission and excitation spectra were obtained for comparison with TL and radioluminescence (RL) emission bands. We then compared the structure and intensity of TL curves, RL intensity, and afterglow at room temperature and investigated the trapped charge stability (revealed by TL). The results showed that the SCS technique is capable of producing scintillating materials with less afterglow and RL output comparable to single crystals. The nanophosphor samples also showed lower TL intensities than their single crystal counterparts, which points to a lower concentration of trapping centers. These results demonstrate the potential of nanophosphors produced by SCS for use as scintillators.     

An alpha particle detector based on a GPS mosaic scintillator plate for continuous air monitoring in plutonium handling facilities

An alpha particle detector was developed for continuous air monitoring of radioactive contamination in working chambers at plutonium handling facilities. A 5-cm-square Gd₂Si₂O₇:Ce (cerium-doped gadolinium pyro-silicate, GPS:Ce) mosaic scintillator plate for alpha particle measurements was fabricated from GPS single-crystal grains of around 550 μm diameter; the GPS grains were made of a GPS polycrystalline body grown using a top seeded solution method. The scintillator layer thickness was approximately 100 μm. The surface filling rate of the GPS grains was ca. 62%. To suppress the influence of non-uniformity of pulse heights of a photomultiplier tube, a central part of ∅ 40 mm of a 76-mm-diameter photomultiplier tube was used. In addition, 3 mm thick high-transmission glass was used as a substrate of the scintillator plate. The detector achieved energy resolution of 13% for 5.5 MeV alpha particles, detection efficiency of 61% and a radon progeny nuclide reduction ratio of 64.5%. A new alpha particle detector was developed to achieve a high radon progeny nuclide reduction ratio approaching that of a silicon semiconductor detector, with high resistance to electromagnetic noise and corrosion.     

Sub-wavelength micromachining of silica glass by irradiation of CO<Subscript>2</Subscript> laser with Fresnel diffraction

We investigated a simple and productive micromachining method of silica glass by ablation using a TEA CO₂ laser (10.6 μm) with a spatial resolution down to sub-wavelength scale. The silica glass was irradiated by the TEA CO₂ laser light through a copper grid mask with square apertures of 20×20 μm² attached to the silica glass surface. After the irradiation, circular holes with a diameter of several μm were formed on the silica glass surface at the centers of the apertures due to the Fresnel diffraction effect. The minimum diameter of the holes was 3.4 μm. The characteristics of the micromachining are discussed based on the electric field distributions of the CO₂ laser light under the mask using a three-dimensional full-wave electromagnetic field simulation.     

Ho:LaF3 single crystal as potential material for 2 μm and 2.9 μm lasers

Optical properties of a Ho-doped LaF₃ single crystal have been detailed investigated as a promising material for 2 μm and 2.9 μm lasers for the first time. Judd–Ofelt theory was applied to analyze the absorption spectrum to determine the J–O intensity parameters Ω_t(t=2,4,6), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the ⁵I₇ → ⁵I₈ and ⁵I₆ → ⁵I₇ transitions were obtained by using the Fuchtbauer–Ladenburg method. The gain cross-section for 2 μm emission becomes positive once the population inversion level reaches 30%. The Ho:LaF₃ crystal shows long fluorescence lifetime of ⁵I₇ manifold (25.81 ms) as well as ⁵I₆ manifold (10.37 ms) compared with other Ho³⁺-doped crystals. It can be proposed that the Ho:LaF₃ crystal may be a promising material for 2 μm and 2.9 μm laser applications.