A buffer direct injection and direct injection readout circuit with mode selection design for infrared focal plane arrays

This paper proposes a solution to the excessive area penalty associated with traditional buffer direct injection (BDI) for single pixel. The proposed solution reduces the area and power consumption of BDI to combine the direct injection (DI) within a shared architecture, while a dual-mode readout circuit expands the functionality and performance of the array readout circuit of infrared sensor. An experimental array of 10 × 8 readout circuits was fabricated using TSMC 2P4M 0.35 μm 5 V technology. Measurements were obtained using a main clock with a frequency of 3 MHz and power consumption of 9.94 mW. The minimum input current was 119 pA in BDI and 1.85 pA in DI. The signal swing was 2 V, the root mean square noise voltage was 1.84 mV, and the signal-to-noise ratio was 60 dB. This approach is applicable to mid- and long-band sensors to increase injection efficiency and resolution.     

CMOS monolithic optoelectronic integrated circuit for on-chip optical interconnection

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated using standard 0.35-μm CMOS technology. This OEIC monolithically integrates light emitting diode (LED), silicon dioxide waveguide, photodetector and receiver circuit on a single silicon chip. The silicon LED operates in reverse breakdown mode and can emit light at 8.5 V. The output optical power is 31.2 nW under 9.8 V reverse bias. The measured spectrum of LED showed two peaks at 760 nm and 810 nm, respectively. The waveguide is composed of silicon dioxide/metal multiple layers. The responsivity of the n-well/p-substrate diode photodetector is 0.42 A/W and the dark current is 7.8 pA. The LED-emitted light transmits through the waveguide and can be detected by the photodetector. Experimental results show that on-chip optical interconnects are achieved by standard CMOS technology successfully.     

Er/Yb co-doped fiber amplifier with wavelength-tuned Yb-band ring resonator

Erbium-ytterbium co-doped fiber amplifier with wavelength-tuned Yb-band loop resonator is presented. The amplified spontaneous emission (ASE) from Yb ions is utilized to stimulate a laser emission at several wavelengths from the 1 μm band in the 1550 nm amplifier. The wavelength of this lasing is tuned by introducing a fiber Bragg grating (FBG). The results show, that the overall efficiency of the amplifier at nominal 1550 nm wavelength can be increased by introducing a feedback loop with 1040 nm and 1050 nm FBG. This loop also protects the Er/Yb amplifier from parasitic lasing at 1 μm and allows significant output power scaling without risk of self-pulsing.     

On the step-graded doped-channel (SGDC) field-effect transistor

An i-InGaP/n-In_xGa_1 − xAs/i- GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a large gate voltage swing with high average transconductance, and a high breakdown voltage can be expected. In this study, first, a theoretical model and a transfer matrix technique are employed to analyze the energy states and wavefunctions in the step-graded quantum wells. Experimentally, for a 1  ×  80 μm²gate dimension device, a maximum drain saturation current density of 830 mAmm ^− 1, a maximum transconductance of 188mSmm ^− 1 , a high gate breakdown voltage of 34 V, and a large gate voltage swing 3.3 V with transconductance larger than 150 mSmm ^− 1are achieved. These performances show that the device studied has a good potentiality for high-speed, high-power, and large input signal circuit applications.     

High efficiency on-chip charge pump DC–DC converter for LCD drivers

An on-chip charge pump (CP) DC–DC converter applicable to potable displays is described. A merged 2×/3× booster eligible for both single-phase pumping and dual-phase pumping is developed. A closed-loop sensing scheme with analog/digital mixed-mode voltage regulation helps to ensure a low ripple output voltage and high power transfer efficiency. A test vehicle was implemented for a DC input range of 2.2–3.6 V and the DC output of 5 V with a load condition of 20 mA in a standard 0.35-μm 2poly-4metal CMOS process. The test results reveal output ripple of less than 80 mV and efficiency of 77.4% in the 2× dual phase mode.     

Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock

A higher fracture probability appearing in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) subjected to the thermal shock test, restricts its final yield. In light of the proposed equivalent method, where a 32 × 32 array is employed to replace the real 128 × 128 array, a three-dimensional modeling of InSb IRFPAs is developed to explore its deformation rules. To research the damage degree to the mechanical properties of InSb chip from the back surface thinning process, the elastic modulus of InSb chip along the normal direction is lessened. Simulation results show when the out-of-plane elastic modulus of InSb chip is set with 30% of its Young’s modulus, the simulated Z-components of strain distribution agrees well with the top surface deformation features in 128 × 128 InSb IRFPAs fracture photographs, especially with the crack origination sites, the crack distribution and the global square checkerboard buckling pattern. Thus the Z-components of strain are selected to explore the deformation rules in the layered structure of InSb IRFPAs. Analyzing results show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuits (ROIC) and the intermediate layer above, made up of the alternating indium bump array and the reticular underfill. After passing through both the intermediate layer and the InSb chip, the deformation amplitude is reduced firstly from 2.23 μm to 0.24 μm, finally to 0.09 μm. Finally, von Mises stress criterion is employed to explain the causes that cracks always appear in the InSb chip.     

Efficient high voltage pulser for piezoelectric air coupled transducer

The design of high voltage pulser for air coupled ultrasound imaging is presented. It is dedicated for air-coupled ultrasound applications when piezoelectric transducer design is used. Two identical N-channel MOSFETs are used together with 1200 V high and low side driver IC. Simple driving pulses’ delay and skew circuit is used to reduce the cross-conduction. Analysis of switch peak current and channel resistance relation to maximum operation frequency and load capacitance is given. PSPICE simulation was used to analyze the gate driver resistance, gate pulse skew, pulse amplitude influence on energy consumption when loaded by capacitive load. Experimental investigation was verified against simulation and theoretical predictions. For 500 pF capacitance, which is most common for piezoelectric air coupled transducers, pulser consumes 650 μJ at 1 kV pulse and 4 μJ at 50 V. Pulser is capable to produce up to 1 MHz pulse trains with positive 50 V–1 kV pulses with up to 10 A peak output current. When loaded by 200 kHz transducer at 1 kV pulse amplitude rise time is 40 ns and fall time is 32 ns which fully satisfies desired 1 MHz bandwidth.     

High energy femtosecond OPA pumped by 1030 nm Yb:KGW laser.

We present a traveling-wave-type optical parametric amplifier (OPA) pumped at 1.03 μm by a Yb:KGW laser that produces tunable high-energy pulses of 6.5–4 μJ in the mid-infrared (mid-IR) region from 3.6 to 7 μm. Pumping with negatively chirped pulses generates nearly transform-limited (TL) mid-IR pulses of 300–330 fs length. Pumping with TL pulses of 200 fs not only decreases the output energy by a factor of 1.5, but also decreases the mid-IR pulse-length to 160 fs after additional compression. The compact and simple OPA setup is ideal for femtosecond infrared experiments in the fingerprint region.     

Experimental study on tandem pumped fiber amplifier

We present the experimental results of a 1083 nm fiber amplifier tandem pumped by 1030 nm fiber laser. The output characteristics of the tandem pumped amplifier with cladding-pump and core-pump schemes are both investigated. The 1083 nm signal laser has not been efficiently amplified when cladding-pumped by 1030 nm laser for the weak absorption of the gain fiber. The core-pump scheme works well with the amplifier. The output properties with different gain fiber length are experimentally investigated. The maximum output power is 2.4 W with power conversion efficiency of 60%.     

High LO-to-RF isolation 94 GHz coplanar monolithic down-converter for FMCW radar sensor applications

This paper presents a 94 GHz monolithic down-converter with low conversion loss and high local oscillator (LO)-to-RF isolation using the 0.1 μm T-gate metamorphic high electron-mobility transistor (MHEMT) technology. The down-converter consists of a one-stage amplifier and a single-balanced mixer based on the high-directivity tandem coupler structure using the air-bridge crossovers, thereby amplifying the RF signals and maximizing the LO-to-RF isolation by using an inherent S₁₂ isolation characteristic of the amplifier and good phase balance of the tandem coupler. The fabricated one-stage amplifier using a 30 μm × 2 MHEMT shows a small signal gain of 7 dB at 94 GHz. The single-balanced mixer comprising two 20 μm × 2 MHEMT Schottky diodes and the tandem coupler with an additional λ/4-length line exhibits the conversion loss less than 7.8 dB and the LO-to-RF isolation higher than 30 dB in a RF frequency range of 91–96 GHz. Two circuits designed both for a 50 Ω impedance system are integrated into the down-converter of a 2.6 × 2.5 mm² chip size, and it shows a low conversion loss of ∼1 dB at 94 GHz and excellent LO-to-RF isolation above 40 dB in a frequency range of 90–100 GHz. This is the best isolation among the W-band monolithic down-converters reported to date.     

A low noise 2 × 16 Ge:Sb focal-plane array: Paving the way for large format FPAs for far IR astronomy

Future astronomical instruments call for large format and high sensitivity far infrared focal-plane arrays to meet their science objectives. Arrays as large as 128 × 128 with sensitivities equal to or better than 10⁻¹⁸ W/√Hz are set as targets for the far IR instruments to be developed within the next 10 years. These seemingly modest goals present a not-so-modest quantum leap for far IR detector technology whose progress is hampered by a number of complexities; chief among them the development of low noise readouts operating at deep cryogenic temperatures and a viable hybridization scheme suitable for far IR detectors. In an effort to incrementally develop large-format photoconductor arrays, we have fabricated a 2 × 16 Ge:Sb array using the SBRC190 readout – a cryogenic 1 × 32 CTIA readout multiplexer initially developed for SOFIA’s AIRES instrument. In this paper we report the results of the extensive parametric tests performed on this array showing an impressive noise performance of 2.2 × 10⁻¹⁸ W/√Hz and a DQE of 0.41 despite some design limitations. With such an encouraging performance, this prototype array will serve as a platform for our future developmental effort.     

Large format two-color CMOS ROIC for SLS detectors

The ISC0905 is a 640 × 512, large format, two-color CMOS readout integrated circuit (ROIC) designed for strained-layer superlattice (SLS) detectors. The detector interface is supported through one input pad in each 30 μm pixel. One bit in the serial control word programs the chip to automatically adjust all biases and timing to allow for the integration of either electrons or holes. This feature allows users to easily operate this ROIC with a wide variety of p-on-n or n-on-p detectors. The ROIC has been specifically designed to allow for both polarities of detectors to be placed back-to-back and to connect to the ROIC through a single input pad to obtain a two-color image. The two-color image is achieved by switching the ROIC mode between the two colors on a per frame basis. This paper will describe the interface, design and features of the ISC0905 ROIC as well as a summary of the characterization test results.     

High performance two-color one megapixel CMOS ROIC for QWIP detectors

FLIR Systems, Inc. has designed and fabricated the ISC0501 CMOS readout integrated circuit (ROIC) for quantum well infrared photodetectors (QWIPs). The ISC0501 is a two-color 1024 × 1024 format array with a 30 μm pixel pitch. The ROIC contains a separate analog signal path for each wavelength band. Separate signal paths allow the two-colors to have optimized detector biases, integration times, offsets and gains. This architecture also allows both colors to simultaneously sample a scene and readout the pixel data. This paper will describe the interface, design and features of the ROIC as well as a summary of the characterization test results. A sample image is included from a focal plane array (FPA) built by the Jet Propulsion Laboratory (JPL) using the ISC0501 ROIC with QWIP detectors designed by JPL.     

Erbium–ytterbium co-doped fiber amplifier operating at 1550 nm with stimulated lasing at 1064 nm

A new method of controlling the amplified spontaneous emission (ASE) from Yb^3 + ions in Er^3 +/Yb^3 + co-doped fiber amplifiers is presented. The 1 μm ASE is suppressed by stimulating a laser emission at 1064 nm in a fiber amplifier, due to a positive feedback for the 1 μm signal. The results are compared to a conventional amplifier setup without any ASE control. We have shown, that applying a feedback loop in an Er^3 +/Yb^3 + co-doped fiber amplifier allows higher power scaling and provides operation without unwanted parasitic lasing effects, increasing the stability and robustness of the amplifier.     

A 1k-pixel CTIA readout multiplexer for far-IR photodetector arrays

SB349 is the first 32 × 32 CTIA readout multiplexer specifically designed for far-IR photodetectors and is operable at cryogenic temperatures at least as low as 1.7 K. Four of these readouts can be butted together to form a 64 × 64 mosaic array. The array is multiplexed into eight parallel outputs and features eight selectable gain settings to accommodate various background levels, auto-zero for better input uniformity, and sample-and-hold circuitry. A special, 2-micron cryo-CMOS process was adopted to prevent freeze out and ensure low noise and proper operation at deep cryogenic temperatures. The read noise of the bare device at 4.2 K and under nominal sampling conditions was measured to be about 250e^? for the 106fF signal capacitor with the well capacity of 400ke^?. Hybridized to a typical germanium detector, the array should achieve NEP levels in the low 10^–18 W/√Hz. An overview of the design and the latest results of the test and characterization of this device are reported in this paper.     

11-mJ pulse energy wideband Yb-doped fiber laser

We report a wide bandwidth (Δλ=8 nm) optical pulsed MOPA (master oscillator power amplifier) source emitting 11.23 mJ pulses (1.25 MW peak power) in the wavelength centered at (λ=1064 nm). Pulse duration and repetition rate were 9 ns and from 10 Hz to 100 Hz, respectively. In order to suppress amplified spontaneous emission (ASE), multi-stage pulse pump technology is applied. And the large core diameter (90 μm) and wide bandwidth ensures the high peak power and energy output.     

Diode-pumped actively Q-switched Nd:GGG laser operating at 938 nm

The stimulated emission cross-section of Nd:GGG crystal in 938 nm transition was measured by the amplifier approach. It is 2.3×10^?20 cm². A quasi-continuous-wave diode pumped, actively Q-switched Nd:GGG laser operating at 938 nm was demonstrated. Pumped by laser diodes with 900 W peak power and 300 μs pulse duration, it generated 168 mJ energy in long pulse mode. The slope efficiency was 36%. Q-switched by a KD?P Pockels cell, 41 mJ output pulse energy was obtained. The pulse duration and peak power were 120 ns and 340 kW, respectively. The optical to optical efficiency was 7%.     

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (?_B), ideality factor (η) and density of interface states (N_SS) were obtained from experimentally measured current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after vacuum annealing treatment. The data revealed that ?_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at ?100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0 0 0 1) interface.     

Nanosecond-pulsed erbium-doped fiber lasers with graphene saturable absorber

We demonstrate graphene mode-locked nanosecond erbium-doped fiber laser in an all-fiber ring cavity. The clean and robust pulse train was generated at 27 mW pump power. Resultant central wavelength, repetition rate and pulse width was 1560 nm, 388 kHz and 6 ns, respectively. With two stage fiber amplifier, the output power was 553 mW, corresponding to single pulse energy of 1.4 μJ. In addition, the pulse-width can be varied ranging from 3 ns to 20 ns at repetition rate between 200 kHz and 1.54 MHz by changing the length of the laser cavity.     

Performance of mid-wave T2SL detectors with heterojunction barriers

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10⁻⁶ A/cm² at −0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p–i–n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.