Ion synthesis of silver nanoparticles in viscous-fluid epoxy resin

A method is described for the ion synthesis of silver nanoparticles in epoxy resin that is in a viscousfluid state (viscosity 30 Pa s) during irradiation. The viscous-fluid or glassy polymer is implanted by 30-keV silver ions at a current density of 4 μA/cm² in the ion beam in the dose range 2.2 × 10¹⁶–7.5 × 10¹⁶ ions/cm². The epoxy layers thus synthesized contain silver nanoparticles, which are studied by transmission electron microscopy and optical absorption spectroscopy. The use of the viscous-fluid state increases the diffusion coefficient of the implanted impurity, which stimulates the nucleation and growth of nanoparticles at low implantation doses and allows a high factor of filling of the polymer with the metal to be achieved.     

Optical properties of ZnO and Al2O3 implanted with silver ions

ZnO and Al₂O₃ samples implanted with 30-keV silver ions with fluences in the interval (0.25–1.00) × 10¹⁷ ions/cm² are studied by the method of optical photometry in the visible part of the spectrum. The optical transmission spectra of the implanted samples exhibit a selective band associated with surface plasmon resonance absorption of silver nanoparticles. The intensity of this band nonmonotonically depends on the implantation fluence. The silver ion depth distribution in the samples is calculated. It is shown that the non-monotonicity observed in experiments is due to an increase in the substrate sputtering ratio with increasing implantation fluence. It is found that vacuum thermal annealing of the implanted Al₂O₃ layers up to 700°C causes a considerable narrowing of the plasmon absorption bandwidth without a tangible change in its intensity. At higher annealing temperatures, the plasmon absorption band broadens and its intensity drops. Annealing of the ZnO films under such conditions causes their complete vaporization.     

弱吸收基底上弱吸收薄膜的光学常数计算方法

采用一种相对简单而又精确的光度法来计算弱吸收基底上弱吸收薄膜的光学常数,为低损耗紫外薄膜的设计与实现提供了理论基础。采用JGS1型熔融石英基底,制备了MgF2与LaF3材料的单层膜,获得了JGS1型熔融石英基底及MgF2与LaF3薄膜的光学常数色散曲线。结果显示:在200 nm左右处,JGS1型熔融石英基底的吸收已经比较明显,消光系数在10-8量级,因此,应考虑基底的弱吸收,以提高薄膜光学常数的计算精度。     

ZnO nanoparticle creating in a SiO2/Si structure using the Zn ion implantation with subsequent heat treatment

The distribution profiles of the dopant in the surface layer of a SiO₂/Si structure implanted with Zn and O ions are studied via Rutherford backscattering spectroscopy for He²⁺ ions using the channeling technique. The redistribution of implanted impurities in the Si surface layer during the formation process of zinc oxide (ZnO) nanoparticles is analyzed. The effect of the annealing temperature on the formation process and growth of ZnO nanoparticles is studied. The sample-surface morphology is examined via atomic force microscopy. The optical absorption and photoluminescence of the implanted layers are studied.     

Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence

The Stark splitting of the energy levels of Er³⁺ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals.     

First principles analysis of the MgAl2O4:Ni absorption spectrum

Analysis of the energy-level scheme and absorption spectrum of the Ni²⁺ ion in MgAl₂O₄ was performed. The recently developed first-principles approach to the analysis of the absorption spectra of impurity ions in crystals based on the discrete variational multi-electron (DV-ME) method [K. Ogasawara, et al., Phys. Rev. B 64 (2001) 115413) was used in the calculations. The method is based on the numerical solution of the Dirac equation; no phenomenological parameters are used in the calculations. As a result, complete energy-level scheme of Ni²⁺ and its absorption spectra were calculated, assigned and compared with experimental data on the ground and excited state absorption spectra. Numerical contributions of all possible electron configurations into the calculated energy states were determined. By performing analysis of the molecular orbitals population, numerical contributions of the oxygen 2p- and 2s-orbitals into the 3d molecular orbitals were determined.     

Preparation, structure, and properties of metal nanocomposites in lithium niobate

Crystals of lithium niobate LiNbO₃ are implanted with 60-keV Cu^? ions at different ion fluxes to a fluence of 2 × 10¹⁷ ions/cm². The structure and the linear and nonlinear optical properties of the implanted layers are investigated. The optical transmission and ion-induced photon spectra of the LiNbO₃ crystals are measured in the course of implantation. It is revealed that the implantation brings about the formation of complex nanocomposites consisting of metallic copper nanoparticles and nanodomains of the matrix. The distributions of nanoparticles and nanodomains in the implanted layers do not correlate with each other. It is shown that the variations in the linear and nonlinear optical absorption of the nanocomposites are predominantly determined by the changes in the chemical composition and the structure of the matrix.     

离子束合成钇硅化物的结构及红外谱特征

将稀土金属钇离子注入到n型单晶Si(111)中制备出钇硅化物埋层.利用x射线衍射、卢瑟福背散射和傅里叶红外吸收谱测量分析了样品的结构、原子的埋层分布和振动模式.结果表明，Y离子在注入过程中已与基底中的Si原子形成了YSi2结构相.真空下的红外光辐照处理促使YSi2择优取向生长，埋层中Si与Y的平均原子浓度比由24下降为20，与六方YSi2的化学计量比一致.还给出了钇硅化物的特征红外吸收谱.     

Error analysis of the absorption coefficient calculated by the materials' transmissivities and refractive indices

In this paper, a practical method for obtaining the exact absorption coefficient of optical media was presented, which can be applied to amend the error attributed to multi-reflections. According to the materials' transmissivities and refractive indices, a formula was derived, which can be used for calculating the absorption coefficient. The feasible region with the relative error lower than 10% was represented by a mathematical expression. The calculated formula was confirmed to be applicable to optical materials with strong-absorbent (>0.1 cm^?1), especially laser or Raman media. This study can provide a useful approach for getting exact absorption coefficients of new optical materials and other derivative parameters.     

Electron spectrum and intrinsic absorption of heavily doped n-GaAs

The article presents results of a numerical calculation, made with a computer, of several parameters and functions characterizing the electron spectrum of heavily doped semiconductors; in addition, the article presents theoretically calculated and experimentally obtained dispersion curves of the absorption coefficient in the region of interband transitions in heavily doped n-GaAs. The numerical calculation method is based upon the work of V. L. Bonch-Bruevich, who used Green functions. Calculations and experimental measurements were made for n-GaAs with free electron concentrations of 4.8·10¹⁸ cm^?3 at temperatures of 10–610?K. Agreement between the theoretically calculated and the experimentally obtained values of the absorption coefficient is observed in the edge region at photon energies exceeding the width of the forbidden band of the pure semiconductor.     

Comparative first-principles analysis of the absorption spectra of ZnAl2S4 and ZnGa2O4 crystals doped with Cr3+

Systematic first-principles analysis of the energy level schemes and ground state absorption spectra of trivalent chromium in ZnAl₂S₄ and ZnGa₂O₄ crystals has been performed in the present paper. The recently developed first-principles approach to the analysis of the absorption spectra of impurity ions in crystals based on the discrete variational multi-electron (DV-ME) method [K. Ogasawara et al., Phys. Rev. B 64, 115413 (2001)] was used in the calculations. The method is based on the numerical solution of the Dirac equation; no phenomenological parameters are used in the calculations. As a result, complete energy level schemes of the Cr³⁺ ion and its absorption spectra in both crystals were calculated, assigned and compared with experimental data. By performing analysis of the molecular orbital (MO) population, it was shown that the covalency of the chemical bonds between the Cr³⁺ and S^2- ions is more significant than that one between the Cr³⁺ and O^2- ions.     

Theoretical studies of absorption spectra and microstructure of Ni2+ at the octahedral site of the NiFe2O4 nanoparticle

The optical absorption spectra, microstructure and electronic spin resonance parameters (electronic spin resonance (ESR) g factor) for Ni²⁺ ions at octahedral centers of nickel ferrite nanoparticles are calculated from the two-spin–orbit-parameter model. The effect of spin–orbital coupling of the central metal 3d⁸ ions and ligand oxygen ions has been taken into account in the full energy matrix and ESR g formula. The calculated results are in good agreement with the observed values. In addition, the microstructures of Ni²⁺ ions at octahedral centers in NiFe₂O₄ are reasonably determined from the calculations.     

Analysis of sound absorption by periodic structures using a hybrid-boundary element/mode expansion method

An improved hybrid method is proposed for analyzing sound scattering by a periodic structure. Part of the scattered field formulated with the mode expansion method is combined with other components of the field formulated with the boundary integration method in one period of the structure. Structures treated by this method can have arbitrary periodic forms made of locally reactive boundaries and porous materials. The oblique incident absorption coefficient of the structure is obtained simply from the reflection factor calculated for each elemental wave of the scattered field. The accuracy of the method is demonstrated by the agreement between calculated and measured values of the normal absorption coefficient of some test structures.     

Ag-Cu离子注入玻璃后不同气氛退火的光吸收研究

采用MEVVA源（metal vapor vacuum arc ion source）引出的强束流脉冲Ag,Cu离子先后注入到SiO₂玻璃，x射线光电子能谱仪（XPS）分析显示Ag，Cu大多仍为金属态，有部分氧化态Cu存在.透射电镜观察分析和光学吸收谱都表明在衬底中形成了纳米合金颗粒.结合有效媒质理论，得到模拟的光学吸收谱，与实验结果基本符合，较好地验证了以上结论.样品退火后颗粒发生分解，分解的颗粒在氧化气氛下被氧化，且有部分向样品表面蒸发；在还原气氛下氧化态元素被还原并成核生长.故 关键词： 离子注入 纳米颗粒 退火 光学吸收率     

Optical properties of xenon implanted CuInSe2 by photoacoustic spectroscopy

A theoretical relation is derived for the normalized photoacoustic amplitude signal of a gas-coupled cell for the case of double-layer solid samples with particular application given to ion implanted semiconductors. Numerical estimates for a solar cell of the type CdS/CuInSe₂ based on experimental measured data of these compounds are given to illustrate the photoacoustic effect originating from double-layer samples. In application to ion implanted semiconductors, we show that the absorption coefficient of the implanted layer can be very easily extracted by photoacoustic spectroscopy if the absorption coefficient of the untreated substrate is known. We also present the optical properties results obtained from the analysis of the effect of xenon implantation into CuInSe₂ single crystals with the energy of 40 keV and a dose of 5×10¹⁶ ions/cm².     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Iron nanoparticles in amorphous SiO<Subscript>2</Subscript>: X-ray emission and absorption spectra

The local structure of the chemical bond of iron ions implanted into SiO₂ glasses (implantation energy, 100 keV; fluence, 1 × 10¹⁶ cm^?2) is investigated using x-ray emission and absorption spectroscopy. The Fe L x-ray emission and absorption spectra are analyzed by comparing them with the corresponding spectra of reference samples. It is established that iron nanoparticles implanted into the SiO₂ vitreous matrix are in an oxidized state. The assumption is made that the most probable mechanism of transformation of iron nanoparticles into an oxidized state during implantation involves the breaking of Si-O-Si bonds with the formation of Si-Si and Fe-O bonds.     

Anisotropic nonlinear optical absorption of gold nanorods in a silica matrix

Nanocomposite films consisting of gold nanospheres or gold nanorods embedded in a silica matrix have been prepared using a hybrid deposition technique consisting of plasma-enhanced chemical vapor deposition of SiO₂ and co-sputtering of gold, followed by annealing at 900 °C. Subsequent irradiation with 30 MeV heavy ions (Cu⁵⁺) was used to form gold nanorods. Linear and nonlinear optical properties of this material are closely related with the surface plasmon resonance in the visible. The nonlinear absorption coefficient (α₂@532 nm) for the films containing gold nanospheres was measured by Z-scan and P-scan techniques, and it was found to be isotropic and equal to −4.8 × 10⁻² cm/W. On the contrary, gold nanorods films exhibited two distinct surface plasmon resonance absorption bands giving rise to a strong anisotropic behavior, namely a polarization-dependent linear absorption and saturable absorption. Z-scan and P-scan measurements using various light polarization directions yielded nonlinear absorption coefficient (α₂@532 nm) values varying from −0.9 × 10⁻² cm/W up to −3.0 × 10⁻² cm/W. Linearity of the P-scan method in the context of nanocomposite saturable absorption is also discussed.     

Improved quantitative analysis of Cu(In,Ga)Se2 thin films using MCs+-SIMS depth profiling

The chalcopyrite semiconductor, Cu(InGa)Se₂ (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs⁺ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs⁺ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs⁺ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs⁺ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs⁺-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs⁺ distribution for the CIGS thin films.     

SiC埋层的制备及其红外吸收特性

采用metal vapor vacuum arc离子源的离子束合成方法，对单晶Si衬底注入C^＋离子，获得不同剂量下的SiC埋层．C^＋离子束的引出电压为50kV，注入的剂量为3.0×10¹⁷—1.6×10¹⁸cm^-2．通过红外吸收谱的测试和分析，表明SiC埋层的结晶程度依赖于剂量的大小．研究证实，可以在较低的平均衬底温度下（低于400℃）得到含立方相结构的SiC埋层． 关键词：