Conversion efficiency enhanced photovoltaic device with nanohole arrays in antireflection coating layer

In this paper, the authors introduce an enhanced photovoltaic device with nanohole arrays only in its antireflection coating. These nanoholes can improve light trapping efficiency as well as photoelectric conversion efficiency of the device. The authors analyze the light absorption of the devices with nanohole arrays by Finite-Difference Time Domain method and calculate the photoelectric conversion efficiency. The results show that the nanohole arrays can improve the light trapping more efficiently than the Si₃N₄ antireflection coating, especially, in 400-600 nm spectral range. Nanohole arrays with different characteristic parameters were fabricated in the antireflection coating layer of a Φ200 μm Si detector by using focused-ion beam system. With the optimized nanohole arrays, the enhancements factor of the experimental sample's photoelectric conversion efficiency is ~ 16% within the 400-600 nm spectral range and ~ 10% within the 400-1100 nm spectral range.     

Low cost CBD ZnS antireflection coating on large area commercial mono-crystalline silicon solar cells

Zinc sulfide is a wide band gap semiconductor with high refractive index and hence a promising material for antireflection coating over commercial silicon solar cells. In the present work, attempts have been made to improve the rate of deposition, uniformity of deposited film, stoichiometry, refractive index and the percentage of reflection, respectively, by proper optimization of molar percentage of different CBD ZnS bath chemical constituents and deposition conditions. High values of the rate of film deposition (19.6 Å), film uniformity (S.D.<1.8) and refractive index (2.35) along with a low percentage of average reflection (0.655) are achieved with proper optimization of ZnS bath. We have successfully fabricated 13.8% efficient large area (103 mm×103 mm) mono-crystalline silicon solar cells with CBD ZnS antireflection coating.     

等离子体浸没离子注入制备黑硅抗反射层及其光学特性研究

表面织构是一种有效降低表面反射率、提高硅基太阳能电池效率的方法. 采用等离子体浸没离子注入的方法制备了黑硅抗反射层.分别通过原子力显微镜和紫外-可见-近红外分光光度计对黑硅样品表面形貌和反射率进行分析, 结果发现黑硅样品表面布满了高度为0—550 nm的山峰状结构, 结构层中硅体积分数和折射率随抗反射层厚度增加而连续降低. 在300—1000 nm波段范围内,黑硅样品的加权平均反射率低至6.0%. 通过传递矩阵方法对黑硅样品反射谱进行模拟,得到的反射谱与实测反射谱非常符合.     

基于时间控厚离子束溅射技术的宽带减反膜制备

为了制备满足设计要求的宽角度、宽波段减反膜,利用离子束溅射沉积技术,在时间-功率控厚的模式下,对膜层沉积速率进行了精确修正。在实验中,利用时间-功率控厚的离子束溅射沉积技术,选择HfO2和SiO2作为高低折射率组合,在超抛ZF6玻璃基底上制备了宽角度、宽带减反膜,通过对实验后的透过率光谱曲线的数值反演计算,获得膜层厚度修正系数,初步得到了沉积速率随沉积时间变化的规律。利用修正后的沉积参数制备设计的膜系,在0°~30°入射角度下,600~1 200 nm波段的平均透过率达到99%以上。     

基于时间控厚离子束溅射技术的宽带减反膜制备

 为了制备满足设计要求的宽角度、宽波段减反膜,利用离子束溅射沉积技术,在时间-功率控厚的模式下,对膜层沉积速率进行了精确修正。在实验中,利用时间-功率控厚的离子束溅射沉积技术,选择HfO₂和SiO₂作为高低折射率组合,在超抛ZF6玻璃基底上制备了宽角度、宽带减反膜,通过对实验后的透过率光谱曲线的数值反演计算,获得膜层厚度修正系数,初步得到了沉积速率随沉积时间变化的规律。利用修正后的沉积参数制备设计的膜系,在0°~30°入射角度下,600~1 200 nm波段的平均透过率达到99%以上。