Chromatic aberration free liquid crystal adaptive optics for flood illuminated retinal camera

A high-resolution, flood-illumination retinal camera using liquid crystal (LC) adaptive optics (AO) is presented. The retinal camera uses light at 780 nm for ocular aberration measurement while light at 655 nm and 593 nm for retinal imaging. In order to avoid chromatic aberrations due to wavelength dependence of LC, we adopt an open-loop technique, in which dynamic correction of aberrations is applied only to the imaging light. A compensation pattern projected on the LC wavefront corrector is adjusted to provide phase wrapping of 2 π for illumination light. We confirmed feasibility of this technique by performing in vivo retinal imaging experiments. Photoreceptors were clearly revealed at both imaging light at 655 nm and 593 nm. Feasibility of the technique was also supported by comparison of the retinal images taken by the present open-loop technique with those taken by the conventional closed-loop one and by analysis of the spatial distribution of the photoreceptors.     

Image quality of microns-thick specimens in the ultra-high voltage electron microscope

Image quality of MeV transmission electrons is an important factor for both observation and electron tomography of microns-thick specimens with the high voltage electron microscope (HVEM) and the ultra-HVEM. In this work, we have investigated image quality of a tilted thick specimen by experiment and analysis. In a 3 MV ultra-HVEM, we obtained transmission electron images in amplitude contrast of 100 nm gold particles on the top surface of a tilted 5 μm thick amorphous epoxy-resin film. From line profiles of the images, we then measured and evaluated image blurring, contrast, and the signal-to-noise ratio (SNR) under different effective thicknesses of the tilted specimen and accelerating voltages of electrons. The variation of imaging blurring was consistent with the analysis based on multiple elastic scattering. When the effective thickness almost tripled, image blurring increased from ～3 to ～20 nm at the accelerating voltage of 3 MV. For the increase of accelerating voltage from 1 to 3 MV in the condition of the 14.6 μm effective thickness, due to the reduction of multiple scattering effects, image blurring decreased from ～54 to ～20 nm, and image contrast and SNR were both obviously enhanced by a factor of ～3 to preferable values. The specimen thickness was shown to influence image quality more than the accelerating voltage. Moreover, improvement on image quality of thick specimens due to increasing the accelerating voltage would become less when it was further increased from 2 to 3 MV in this work.     

Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seeds

We describe the fabrication of Ge nanowires during a single co-deposition step of Ge and Mn at high temperature. In these experimental conditions, a phase separation occurs and two different phases Ge and Ge_1 ? xMn_x are formed with Ge_1 ? xMn_x in the shape of small clusters distributed randomly in the Ge matrix. Because of the high deposition temperature, a new Ge_1 ? xMn_x phase with low eutectic point is stabilized; this phase is different from the one (commonly Ge₃Mn₅) stabilized at lower temperature. During the growth process at 350 °C, the crystalline clusters remain solid but they are highly mobile and can float at the surface, serving as seeds to direct the growth of crystalline Ge nanowires from the vapor. The sketch steps of NWs formation are first the phase separation with formation of specific Ge_1 ? xMn_x critical nuclei with low eutectic point and second the growth of Ge NWs directed by the Ge_1 ? xMn_x solid cluster seeds. Ge NWs growth is forced along particular crystalline axis by the cluster seeds that lower the interfacial energy Ge/Ge_1 ? xMn_x and the energy formation of the germanium crystal stabilizes the cluster position at the tip of the NWs. The density of NWs can be tuned by varying the nominal Mn concentration since this density is related to the number of clusters with the specific Ge_1 ? xMn_x phase (with low eutectic point). The single step MBE process presented here has the main advantage to fully avoid any incorporation of unintentional impurity into Ge nanowires (apart from Mn atoms) and could be applied to several other systems. This work also provides new insights into the vapor–solid–solid growth mechanisms of Ge NWs.     

Performance and early applications of a versatile double aberration-corrected JEOL-2200FS FEG TEM/STEM at Aalto University

Applications relevant to carbon based nano-materials have been explored using a newly installed JEOL-2200FS field emission gun (FEG) (scanning) transmission electron microscope (S)TEM which is integrated with two CEOS aberration correctors for both the TEM image-forming and the STEM probe-forming lenses. The performance and utility of this newly commission hardware has been reviewed with a particular focus on operation at an acceleration voltage of 80 kV, thus bringing the primary electron beam voltage below the knock-on threshold for carbon materials and opening up a range of possibilities for the study of carbon-based nanostructures in the aberration-corrected electron microscope. The ability of the microscope to obtain both atomic TEM images and high-quality electron diffraction patterns from carbon nanotubes was demonstrated. The chiral structure of a double-walled carbon nanotube was determined from its diffraction pattern. The aberration corrected TEM imaging technique facilitates a unique approach to accurate determination of single-walled carbon nanotube diameters. On the other hand, the probe-corrected high angle annular dark field (HAADF) STEM imaging performance allows for the detection of single gold atoms at 80 kV and was used to study the graphite interlayer spacing in a multi-walled carbon nanotube.     

Metallization of Ge(0 0 1)-p(2 × 1) surface as result of thermal fluctuations

We present a theoretical study of the metallization of Ge(0 0 1)-p(2 × 1) surface which is observed in experimental data. We have considered the connection between thermal fluctuation of this surface structure and its metallic properties. To this end we have performed long-time MD-DFT simulations. The obtained results show that thermal fluctuation of the Ge(0 0 1)-p(2 × 1) structure may cause its metallization which in not necessary connected with a flip-flop motion of dimer atoms. It was shown that the metallization of the Ge(0 0 1)-p(2 × 1) surface takes place when the dimer buckling angle is reduced to around 11°. In the case of our simulations the considered surface system remained in the metallic state for 25% of the simulation time. We have also found that the metallic state of the fluctuating Ge(0 0 1)-p(2 × 1) surface is built up by dangling bonds of the dimer atoms shifted up (D_up) and down (D_down).     

Quantitative assessment of effects of phase aberration and noise on high-frame-rate imaging

The goal of this paper is to quantitatively study effects of phase aberration and noise on high-frame-rate (HFR) imaging using a set of traditional and new parameters. These parameters include the traditional −6-dB lateral resolution, and new parameters called the energy ratio (ER) and the sidelobe ratio (SR). ER is the ratio between the total energy of sidelobe and the total energy of mainlobe of a point spread function (PSF) of an imaging system. SR is the ratio between the peak value of the sidelobe and the peak value of the mainlobe of the PSF. In the paper, both simulation and experiment are conducted for a quantitative assessment and comparison of the effects of phase aberration and noise on the HFR and the conventional delay-and-sum (D&S) imaging methods with the set of parameters. In the HFR imaging method, steered plane waves (SPWs) and limited-diffraction beams (LDBs) are used in transmission, and received signals are processed with the Fast Fourier Transform to reconstruct images. In the D&S imaging method, beams focused at a fixed depth are used in transmission and dynamically focused beams are used in reception for image reconstruction.The simulation results show that the average differences between the −6-dB lateral beam widths of the HFR imaging and the D&S imaging methods are −0.1337 mm for SPW and −0.1481 mm for LDB, which means that the HFR imaging method has a higher lateral image resolution than the D&S imaging method since the values are negative. In experiments, the average differences are also negative, i.e., −0.2804 mm for SPW and −0.3365 mm for LDB. The results for the changes of ER and SR between the HFR and the D&S imaging methods have negative values, too. After introducing phase aberration and noise, both simulations and experiments show that the HFR imaging method has also less change in the −6-dB lateral resolution, ER, and SR as compared to the conventional D&S imaging method. This means that the HFR imaging method is less sensitive to the phase aberration and noise.Based on the study of the new parameters on the HFR and the D&S imaging methods, it is expected that the new parameters can also be applied to assess quality of other imaging methods.     

Coverage dependence of glycine adsorption on the Ge(100) − 2 × 1 surface

A combination of infrared spectroscopy, X-ray photoelectron spectroscopy and density functional theory has been used to investigate the adsorption behavior of glycine at the Ge(100) ? 2 × 1 surface under ultrahigh vacuum conditions. Comparison of experimental and simulated IR spectra indicates that at 310 K, glycine adsorbs on Ge(100) ? 2 × 1 via O–H dissociation, with some fraction of the products also forming an N dative bond to a neighboring germanium atom. O–Ge dative bonding is not observed. As coverage increases, the surface concentration of the monodentate O–H dissociated adduct increases, while that of the N dative-bonded species appears constant. XPS data support and clarify the IR findings and reveal new insights, including the presence at higher coverage of a minor product that has undergone dual O–H and N–H dissociation. These findings are supported by the calculated energy diagrams, which indicate that the reaction of a glycine molecule on the Ge(100) ? 2 × 1 surface via O–H dissociation and interdimer N dative bonding is both kinetically and thermodynamically favorable and that N–H dissociation of this adduct is feasible at room temperature given incomplete thermal accommodation along the reaction pathway.     

Ultrasonic imaging using air-coupled P(VDF/TrFE) transducers at 2 MHz

A reflection non-contact ultrasonic microscope system working both in amplitude and phase difference modes at 2 MHz has been developed using an air-coupled concave transducer made of piezoelectric polymer films of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. The transducer is composed of three 95 μm-thick P(VDF/TrFE) films stacked together, each of which is activated electrically in parallel by a driving source. The transducer has a wide aperture angle of 140° and a focal length of 10 mm. The measured two-way transducer insertion loss is 80 dB at 1.83 MHz. Despite 20 dB higher insertion loss than that estimated from Mason’s equivalent circuit, we have obtained clear amplitude acoustic images of a coin with transverse resolution of 150 μm, and clear phase difference acoustic images of the rough surface of a paper currency bill with depth resolution of sub-micrometer. Using two planar transducers of P(VDF/TrFE), we have also successfully measured in through-transmission mode the sound velocity and absorption of a 3 mm-thick silicone-rubber plate. The present study proves that, owing to its low acoustic impedance and flexibility, P(VDF/TrFE) piezoelectric film is very useful for high frequency acoustic imaging in air in the MHz range.     

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

By combined investigation of STM and synchrotron PES on Ge/Si(5 5 12)-2 × 1 at 530 °C, it has been found that, in addition to the upward-relaxed surface Si atoms, a subsurface Si atom is also readily replaced by an arriving Ge atom at the initial adsorption stage. Such enhanced interdiffusion is due to a unique character of one-dimensional chain structures of the reconstructed substrate, such as π-bonded and honeycomb chains not existing on other low-index Si surfaces such as Si(001)-c(4 × 2) and Si(111)-7 × 7, applying a tensile surface stress to the neighbouring subsurface atoms. Interdiffusion of Ge having lower surface energy induces adsorption of the displaced Si atoms on the surface to form sawtooth-like facets composed of (113)/(335) and (113)/(112) with arriving Ge atoms until the surface is filled with those facets. Such displacive adsorption is the origin of high Si concentration of formed facets.     

Novel TMM for analyzing evanescent waves and optimized subwavelength imaging in a multilayer structure

Here, we report the best configuration for metal-dielectric multilayer structure that recently has been used for sub-wavelength imaging beyond the diffraction limit. We have used Genetic Algorithm (GA) to achieve the best optical transfer function (OTF) calculated by a novel Transfer Matrix Method (TMM) for evanescent waves, to find optimized configuration of the structure for sub-wavelength imaging. Our optimized configuration composed of Ag–GaP with 10 nm thickness for both layers and air as the surrounding medium, shows 0.05 λ imaging resolution with 83.82% contrast at 545 nm wavelength. Also, we show that in photolithographic applications if imaging and object layers are replaced by a photoresist and quartz respectively instead of air, 0.03 λ resolution can be obtained. In contrast to the other works, we have mathematically obtained a structure that exhibits better resolution in a visible wavelength in spite of thinner layers thickness by regarding fabrication difficulties.     

Efficient high voltage pulser for piezoelectric air coupled transducer

The design of high voltage pulser for air coupled ultrasound imaging is presented. It is dedicated for air-coupled ultrasound applications when piezoelectric transducer design is used. Two identical N-channel MOSFETs are used together with 1200 V high and low side driver IC. Simple driving pulses’ delay and skew circuit is used to reduce the cross-conduction. Analysis of switch peak current and channel resistance relation to maximum operation frequency and load capacitance is given. PSPICE simulation was used to analyze the gate driver resistance, gate pulse skew, pulse amplitude influence on energy consumption when loaded by capacitive load. Experimental investigation was verified against simulation and theoretical predictions. For 500 pF capacitance, which is most common for piezoelectric air coupled transducers, pulser consumes 650 μJ at 1 kV pulse and 4 μJ at 50 V. Pulser is capable to produce up to 1 MHz pulse trains with positive 50 V–1 kV pulses with up to 10 A peak output current. When loaded by 200 kHz transducer at 1 kV pulse amplitude rise time is 40 ns and fall time is 32 ns which fully satisfies desired 1 MHz bandwidth.     

Development of high resolution 3D hyperpolarized carbon-13 MR molecular imaging techniques

The goal of this project was to develop and apply techniques for T₂ mapping and 3D high resolution (1.5 mm isotropic; 0.003 cm³) ¹³C imaging of hyperpolarized (HP) probes [1-¹³C]lactate, [1-¹³C]pyruvate, [2-¹³C]pyruvate, and [¹³C,¹⁵N₂]urea in vivo. A specialized 2D bSSFP sequence was implemented on a clinical 3T scanner and used to obtain the first high resolution T₂ maps of these different hyperpolarized compounds in both rats and tumor-bearing mice. These maps were first used to optimize timings for highest SNR for single time-point 3D bSSFP acquisitions with a 1.5 mm isotropic spatial resolution of normal rats. This 3D acquisition approach was extended to serial dynamic imaging with 2-fold compressed sensing acceleration without changing spatial resolution. The T₂ mapping experiments yielded measurements of T₂ values of > 1 s for all compounds within rat kidneys/vasculature and TRAMP tumors, except for [2-¹³C]pyruvate which was ~ 730 ms and ~ 320 ms, respectively. The high resolution 3D imaging enabled visualization the biodistribution of [1-¹³C]lactate, [1-¹³C]pyruvate, and [2-¹³C]pyruvate within different kidney compartments as well as in the vasculature. While the mouse anatomy is smaller, the resolution was also sufficient to image the distribution of all compounds within kidney, vasculature, and tumor. The development of the specialized 3D sequence with compressed sensing provided improved structural and functional assessments at a high (0.003 cm³) spatial and 2 s temporal resolution in vivo utilizing HP ¹³C substrates by exploiting their long T₂ values. This 1.5 mm isotropic resolution is comparable to ¹H imaging and application of this approach could be extended to future studies of uptake, metabolism, and perfusion in cancer and other disease models and may ultimately be of value for clinical imaging.     

Trajectory displacement of a single electron in the drift tube

The positive charge distribution, which is electro-statically induced by a single electron over the inner wall of a drift tube with a constant radius, is analytically calculated. The potential by it is calculated analytically also. The trajectory displacement at image plane of an objective lens, that is, the charge-induced aberration is estimated for two simple lens-models, approximating them electro-statically by a constant radius drift tube. It seems to be less than the diffraction aberration, when the accelerating voltage is higher than 100 V.     

Atomic resolution imaging of oxygen atoms close to heavy atoms by HRTEM and ED,using the superconductor SmFeAsO0.85F0.15 as an example

Imaging of light atoms has always been a challenge in high-resolution electron microscopy. Image resolution is mainly limited by lens aberrations, especially the spherical aberration of the objective lens. Image deconvolution could correct for the image distortion by lens aberrations and restore the structure projection, the resolution of which is limited by the information limit of the microscope. Electron diffraction unrestricted by lens aberrations could overcome this resolution limit. Here we show a combination of electron diffraction and image deconvolution to reveal simultaneously the atomic columns of O and considerably heavier Sm at a very close distance (1.17 Å) in iron-based superconductor SmFeAsO_0.85F_0.15 using a conventional 200 kV electron microscope. The approach used here, starting from an image and an electron diffraction pattern, has an advantage for those radiation-sensitive samples. Besides, it can be applied to simultaneously imaging light and heavy atoms, even though they have a big difference in atomic number and a much smaller atomic distance than the microscope resolution.     

Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

Ge blocked-impurity-band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking contact and absorbing layers of necessary purity and compensation. The effect of doping in the infrared active layer on the far-infrared photoconductive response has been studied, and the optimum doping concentration is found to be ∼4 × 10¹⁶ cm⁻³. Devices doped near this concentration show good blocking characteristics with low dark currents. The spectral response extends to ∼45 cm⁻¹, clearly showing the formation of an impurity band. Under low background testing conditions these devices attain a responsivity of 0.12 A/W and NEP of 5.23 × 10⁻¹⁵ W/Hz^1/2.     

Frequency compounded imaging with a high-frequency dual element transducer

This paper proposes a frequency compounding method to reduce speckle interferences, where a concentric annular type high-frequency dual element transducer is used to broaden the bandwidth of an imaging system. In frequency compounding methods, frequency division is carried out to obtain sub-band images containing uncorrelated speckles, which sacrifices axial resolution. Therefore, frequency compounding often deteriorates the target-detecting capability, quantified by the total signal-to-noise ratio (SNR), when the speckle’s SNR (SSNR) is not improved as much as the degraded axial resolution. However, this could be avoided if the effective bandwidth required for frequency compounding is increased. The primary goal of the proposed approach, hence, is to improve SSNR by a factor of two under the condition where axial resolution is degraded by a factor of less than two, which indicates the total SNR improvement to higher than 40% compared to that of an original image. Since the method here employs a dual element transducer operating at 20 and 40 MHz, the effective bandwidth necessary for frequency compounding becomes broadened. By dividing each spectrum of RF samples from both elements into two sub-bands, this method eventually enables four sets of the sub-band samples to contain uncorrelated speckles. This causes the axial resolution to be reduced by a factor of as low as 1.85, which means that this method would improve total SNR by at least 47%. An in vitro experiment on an excised pig eye was performed to validate the proposed approach, and the results showed that the SSNR was improved from 2.081 ± 0.365 in the original image to 4.206 ± 0.635 in the final compounding image.     

The construction of a DC high voltage precision divider

A precise DC high-voltage divider was designed and constructed for use as a standard. The ratio of the divider for precise measurement must be known accurately independent of voltage and time. The changes in total resistance of a divider with voltage and time should be considered before design and construction. The divider consists of 100 wire-wound resistors with a total resistance of about 100 MΩ as the high-voltage arm and one wire-wound resistor with resistance of 100 kΩ as the low-voltage arm. The high voltage and ground electrodes were designed to prevent electric field concentration and corona formation at high voltages. A current measuring instrument with 6.5 digit resolution was developed to allow comparison of entering and existing currents for detection of current leakage. Considering the sources of error, a relative uncertainty of 66 ppm (parts per million) was obtained with coverage factor k = 2 for the constructed DC high-voltage divider.     

Study of band offsets in InN/Ge heterojunctions

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 ± 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of ~ 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices.     

A 32-channel coil system for MR vessel wall imaging of intracranial and extracranial arteries at 3T

PurposeTo develop a RF coil system for joint imaging of intracranial and extracranial arterial vessel wall at 3T.Materials and methodThe coil system consists of a 24-channel head coil combined with an 8-channel carotid coil. It is compared with a standard coil configuration (12-channel head coil + 4-channel neck coil + 8-channel carotid coil) for SNR and g-factors in phantoms and healthy volunteers. The clinical relevance of the proposed coil system is also evaluated in patients.ResultsIn phantom experiments, the SNR of the proposed coil system is 53% higher than the maximum SNR of the standard coil configuration at the center of the phantom which usually corresponds to the intracranial region of the head. The g-factors of the proposed coil system in the sagittal plane are lower than the standard coil configuration (by 10.8% and 26.6% for R = 2 and 4 respectively) in the same experiment. In healthy volunteer experiments, 55% of the pixels have SNR above 100 for the proposed coil system, which is 33% more than that of the standard coil configuration. The maximum g-factors in the standard configuration are higher than those from the new coil design by 12% at R = 2 and up to 36% at R = 4 in the sagittal plane. In patients, in-vivo intracranial and extracranial arterial wall images at an isotropic spatial resolution of 0.6 mm can be acquired using the proposed coil system. Plaques are well depicted from the images.ConclusionsThe performance of the proposed coil set is superior to the standard coil configuration, providing high SNR, low g-factor and good spatial coverage needed for simultaneous high resolution imaging of intracranial and extracranial arterial walls. Images acquired in 7.6 min using the proposed coil system can achieve an isotropic spatial resolution of 0.6 mm and can be used to depict plaques on the intracranial and extracranial arterial walls in patients.     

Effect of H2O chemisorption on passivation of Ge(100) surface studied by scanning tunneling microscopy

The electronic passivation of a Ge(100) surface, via the chemisorption of H₂O at room temperature (RT), and the temperature dependence of H₂O coverage were investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). With a saturation H₂O dose at RT, a highly-ordered structure, due to the dissociative chemisorption of H₂O, was observed on a Ge(100) surface with a coverage of 0.85 monolayers (ML). Annealing the room temperature H₂O-dosed Ge surface to 175 °C decreased the coverage of H₂O to 0.6 ML. Further annealing at 250 °C decreased the coverage of H₂O sites to 0.15 ML, and the surface reconstruction of Ge dimers was observed over much of the surface. Annealing above 300 °C induced Ge suboxide structures, similar to the oxygen-dosed Ge surface. STS measurements confirmed that the surface dangling bond states near Fermi energy are removed by the H₂O chemisorption because the dangling bonds of Ge atoms are terminated by ―OH and ―H. The H₂O pre-dose at room temperature provides a template for the ultrathin passivation of Ge(100) surface via atomic layer deposition (ALD) at RT, since near monolayer nucleation can be obtained with a 1/2 hydroxylated and 1/2 hydrogenated Ge surface.