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1.
一种平板玻璃缺陷在线检测系统的研究   总被引:1,自引:0,他引:1  
根据光干涉的原理和视觉检测方法,研究开发了基于机器视觉的玻璃缺陷检测系统。针对实际的目标图像,通过对其进行图像获取、图像预处理、图像分割、特征提取和区域参数计算研究,从而获得玻璃表面锡点、气泡、玻筋等缺陷图像的识别信息。实验表明,该算法简单,速度快,系统抗干扰能力强。系统处理周期最大不超过400 m s,能检测出最小0.3 mm的缺陷。  相似文献   

2.
针对带筋构件R区多类型缺陷的快速检测和精确识别等难题,提出基于分布式激光超声的带筋构件R区缺陷检测和分类识别方法。通过建立有限元模型研究了激光超声在带筋构件中的传播规律及其与R区表面裂纹、近表面气孔等缺陷的相互作用机理,进而设计制作了含典型人工缺陷的6061铝合金带筋构件试样,开展激光超声检测实验。实验获得的缺陷时域信号与B-scan特征图像及仿真结果一致,基于反射与衍射原理实现了对带筋构件R区缺陷定位与定量检测,从而验证了所提分布式激光超声检测方法的可行性,为带筋构件制造缺陷的快速检测和分类识别提供了新思路。  相似文献   

3.
根据光散射原理和视觉检测的方法,研究开发了一种基于机器视觉的眼镜镜片缺陷自动化检测系统,对眼镜镜片进行图像获取、简单的图像处理与分级、分拣,实现对镜片的分类。系统采用并行机构运行,利用低角度前向照明方式获得了镜片表面和内部的斑、杂质、羽毛等缺陷图像;利用归一算法进行图像处理与分级,得到不同缺陷的识别信息。实验结果表明,系统能够检测出镜片中含有的所有缺陷,每个镜片的平均检测时间控制在2 s以内,检测精度为0.038 mm。  相似文献   

4.
SUSAN算子在微小轴承表面缺陷图像分割中的应用   总被引:1,自引:0,他引:1  
采用计算机视觉识别技术对微小轴承端盖上的缺陷进行了自动识别。运用现代控制理论、图像采集与处理技术、软件编程技术,针对缺陷的位置、面积和深度所具有的随机性,设计了一套适合于检测微小轴承表面缺陷的系统。该系统可以采集到高质量的图像信息。利用SUSAN算子实现了对图像的分割和微小轴承表面缺陷的快速检测。实验结果表明,该方法的识别率可达到96%,并具有方法简单、定位准确、抗噪能力强、计算速度快、实时性好等优点。  相似文献   

5.
朱寒  林丽  王健华  陈健 《应用光学》2020,41(4):837-843
针对目前应用于PCB缺陷检测系统的模板匹配方法及缺陷检测方法存在准确性不足的问题,提出一种基于改进模板匹配及图像差分法的PCB缺陷多级检测方法。提出基于多方向Sobel算子的改进模板匹配方法实现待测图像与模板图像的匹配,针对PCB板漏件缺陷,提出基于图像差分法的多级二值化检测法实现PCB图像的缺陷检测。结合实验平台测试发现,该方法能够准确地提取出缺陷区域。与现有方法相比,该方法的误检率仅5%,具有更好的稳定性以及更高的准确性。  相似文献   

6.
柑橘真菌感染部位的高光谱成像快速检测   总被引:1,自引:0,他引:1  
真菌感染是柑橘的一种常见病害,是柑橘腐烂的主要因素,自动化检测出柑橘真菌感染可以有效提高柑橘的商品价值和市场竞争力。运用高光谱成像技术对真菌感染柑橘腐烂部位的缺陷特征进行了快速识别检测。基于ROI提取柑橘真菌感染光谱曲线,对光谱矩阵进行主成分分析,分析权重曲线后得到4个特征波段,分别为615,680,710和725 nm,然后对这4波段组合分别做主成分分析,通过分析权重曲线提取到615和680 nm两个特征波段,基于这两个特征波段做主成分分析,以第2主成分图像为基础识别柑橘真菌感染部位,识别率达到了100%。高光谱成像技术可用于快速检测柑橘真菌感染引起的腐烂缺陷,为开发水果分级和缺陷检测等相关仪器设备的研究提供了理论方法和依据。  相似文献   

7.
提出了一种基于红外图像的建筑物墙体空鼓检测方法,不但可以远距离、无损地对建筑物空鼓等缺陷进行定性检测,还能对建筑物热工缺陷进行定量分析;采用一种红外图像处理方法来消除墙体温度分布中梯度干扰的影响;通过自适应地调整参数对红外图像进行图像增强处理,有效地排除了环境干扰;通过基于空鼓缺陷边缘轮廓的连通域计算,可直接得到空鼓面积的大小数据;建筑物缺陷现场检测实验结果表明,提出的检测方法既能快速定位出建筑物空鼓等缺陷位置又能以78.3%的精度检测出空鼓面积大小,具有较高的工程应用性。  相似文献   

8.
连铸坯的缺陷会对轧制工艺产生影响,通过对连铸坯表面图像特征进行分析,提出了一种基于多尺度数学形态学的连铸坯表面缺陷检测方法。该缺陷检测方法能够有效去除噪声,并对水痕、氧化铁皮、渣痕等伪特征具有较好的抑制作用。实验结果表明,与Sobel方法、Prewitt方法、Canny方法、Laplacian方法等边缘检测方法相比较,该方法对缺陷边缘提取完整、平滑、定位准确,识别准确率达96.37%。  相似文献   

9.
介绍了一种利用图像阈值分割和数学形态学噪声处理的像增强器缺陷的检测方法,通过对阈值分割二值化后的缺陷图像进行形态滤波,达到了自动检测缺陷的目的。该方法不受缺陷形状和位置的影响,能够快速准确的识别出其缺陷,自动判别缺陷的准确性和实际用人眼观察缺陷的结果相一致。实验结果证明了该方法在实际应用中的可行性。  相似文献   

10.
基于锥束CT序列图像的三维缺陷检测方法   总被引:1,自引:0,他引:1  
根据锥束CT序列图像各向同性及缺陷实体在序列图像层间位移和变化较小的特点,提出了一种适合锥束CT序列图像的三维缺陷检测方法。首先结合多目标跟踪思想,利用三维连通区域标记算法提取三维缺陷实体,并建立缺陷对应关系哈希表,以解决缺陷检测中目标轨迹的分叉;然后根据噪声目标的固有特性,对虚假缺陷信息进行有效删除,最终可获得真实缺陷目标实体,缺陷提取精度可达到像素。通过对空心涡轮叶片蜡模锥束CT图像进行实验,结果表明。该方法能准确地提取有较强噪声影响的序列图像的三维缺陷。  相似文献   

11.
溶胶-凝胶法制备ZnO薄膜及其光致发光性质   总被引:2,自引:0,他引:2  
林红  董名友 《光谱实验室》2006,23(2):349-352
利用溶胶-凝胶法在石英衬底上制备了ZnO薄膜,通过测量样品的透射谱、X射线衍射谱、扫描电子显微镜(SEM)图像和光致发光谱研究了其结构特征和发光性质.结果表明:在衍射角2θ=34.32°处出现了对应(002)晶面的强衍射峰,ZnO膜呈多晶状态,具有六角纤矿晶体结构和良好的C轴择优取向,薄膜中颗粒的平均粒径为56nm;光致发光呈多发光峰状,有中心波长为378nm的紫带,520nm绿带,446nm附近的蓝带以及发现未见报道过的绿带以后中心波长为586nm和570nm两个弱发射峰.实验结果表明,制备的ZnO薄膜具有发光特性,但内部与深能级发射相关的结构缺陷浓度还是较高,样品中两个低能量光致发光应来源于晶粒间界的缺陷能级,多缺陷能级导致了多发射峰的光致发光谱.  相似文献   

12.
Xia Li  Kang Xie 《Optics Communications》2009,282(21):4292-4295
Transmission properties of one-dimensional photonic crystal with two nonlinear defects were investigated based on the nonlinear transfer matrix method. From the inspection of the optical bistabilities around different defect modes, it was found that the threshold of bistability for the bonding mode is always lower than that for the anti-bonding mode. When intensity of the incident wave increases bistability could happen at any wavelength larger than the resonance wavelength of the linear anti-bonding mode in the gap. The threshold of bistability increases initially with the wavelength, then decreases sharply in reaching the resonance wavelength of the linear bonding mode. The coupling behavior of the two defects was also discussed, and it was found that the threshold of bistability increases with the distance between the two defects. A flat spectrum similar to that formed in the photonic crystal molecules was obtained under certain incident intensity.  相似文献   

13.
Chemical vapor deposition (CVD) growth of horizontally aligned single-walled carbon nanotubes (SWNTs) was studied using two representative carbon source sources: ethanol and methane. The resulting SWNTs were compared for similar reaction conditions which were based on the formation of Ni metal nanoparticles selective electrochemical deposition (SED) on the defect sites of SWNTs. The products were analyzed by Raman spectroscopy and SEM. The results demonstrate that methane was much better carbon source for growing high quality horizontal alignment of SWNTs than ethanol due to the etching effects of OH radicals on the SWNTs.  相似文献   

14.
We have prepared yttrium aluminum garnet (YAG) in the form of a transparent optical ceramic and measured its spectroscopic properties as a function of temperature. The measurements reveal the presence of at least three distinct types of luminescent defects. These defects are both distinct in nature and more abundant in number than in the corresponding single crystal. While all three emit at low temperatures, only one persists all the way up to and above room temperature. We have demonstrated that energy transfer processes take place between some of the centers. And finally, from the temperature-dependent shapes of the emission and excitation spectra, we have derived an energy level schematic that accurately describes the transfer processes that occur upon stimulation of the various centers.  相似文献   

15.
基于密度泛函第一性原理研究了金属原子Ti在原始、单空位缺陷(SV)、Stone-Wales(SW)缺陷碳纳米管内外的吸附情况.我们的计算结果表明金属Ti原子在缺陷碳纳米管内外结合能的排列顺序为:SVSW-zSW-xpristine(外吸附),SVSW-xSW-zpristine(内吸附).同时,我们通过吸附结构、电子密度和态密度等分析了Ti原子与碳纳米管的作用机制.其中,SV缺陷碳纳米管由于失去一个碳原子而形成了的三个悬键具有很强的结合能力,金属原子Ti在SV缺陷碳纳米管内外的吸附能力都是最强的.对于SW缺陷的碳纳米管,由于缺陷的位置不同,对于金属原子Ti内外吸附的能力也是不同的.因此,缺陷的存在能调节碳纳米管载体对Ti原子的吸附性能.  相似文献   

16.
ZnO发光二极管(LEDs)在照明应用方面有着巨大的潜力。需要解决的主要问题是光的产生和对辐射的控制,这个问题来自LED波长的变化和组合。发现缺陷发光的ZnO有着各种波长范围,适合LED在白光产生方面的应用。同时展示了在实验和理论上可以用于ZnO系统的缺陷辐射。这种类型的缺陷相较于传统的掺杂材料和其他材料,其优点在于不需要广泛和昂贵的生产系统。不仅提出了ZnO薄膜在白色平面LED光源本征缺陷发光的潜在应用,同时也利用一些方法一个特定的中心位置和ZnO薄膜在初期发射谱带的宽分布来控制缺陷的产生。根据不同的制备方法和特定的实验条件,不同的白色,如稍白色和青白色等原本的和重要的颜色-蓝光波段(455, 458 nm),绿光波段(517, 548 nm),红光波段(613, 569 nm)分别被获得。从而说明了这是一种制作白光LED更好的办法-利用ZnO材料。在对ZnO薄膜电学性质的调查研究中,通过薄膜表面的额电子插入和正离子的湮灭已经证明了的观点,随着质子的植入、正离子的湮没、电子的插入和ZnO表面的电学性质的研究,表述结果被进一步的证实。研究人员对单晶ZnO的已经有了一定的研究,PL质子植入ZnO以后呈现橘红色,并且在700 ℃退火后仍然存在,清楚的可以看出PL缺陷的存在。在植入粒子方面最近的文章也有报道,例如在ZnO缺陷表层中注入离子和电子来改变PL性能。VZn也发现了氧化锌薄膜的主要缺陷之一是正电子湮没,同样的,Vlasenko和Watkins也发现了氧化锌表面由于电子辐射产生的缺陷。导致绿色透光率的减少,增加PL致600~700 nm。之后分析和解释ZnO薄膜电阻率的缺陷。由霍尔系数的迹象表明ZnO表现为N型传导,这样做的原因是因为把VO和Zn原子联系在一起,使Zn具有较低的电阻率。试验中氧气退货可以增加ZnO的电阻率,其电阻率的增加是由于VO的减少。另外,在200 ℃条件下准备的样品导电率很低,说明了VO的作用很大。退火氧化锌薄膜电导率下降表明, 看到了主要的缺陷。  相似文献   

17.

The main luminescent centers in SiO 2 films are the red luminescence R (650 v nm; 1.85 v eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (460 v nm; 2.7 v eV) and a UV band (285 v nm; 4.4 v eV). Especially the latter ones are produced under irradiation, but from existing precursors assumed as silicon related oxygen deficient centers (SiODC). Therefore, in order to prove these models we compare a direct oxygen implantation with a direct silicon implantation into SiO 2 layers. The main result is: implanting oxygen increases the red band R but does not affect the blue band B. Silicon surplus increases the amplitude of the blue (B) luminescence, but reduces the amplitude of the red (R) one. Studying the cathodoluminescence dose dependence of these blue and red bands we have established defect transformation kinetics in SiO 2 including six main defects and precursors as well as the mobile oxygen as the main transmitter between precursors and the radiation induced defects. The kinetics is described by eight rate equations which predict the dose dependence of the red (R) and blue (B) luminescence intensities and their temperature dependences very well.  相似文献   

18.
Many papers have studied the free vibration of graphene sheets. However, all this papers assumed their atomic structure free of any defects. Nonetheless, they actually contain some defects including single vacancy, double vacancy and Stone-Wales defects. This paper, therefore, investigates the free vibration of defective graphene sheets, rather than pristine graphene sheets, via nonlocal elasticity theory. Governing equations are derived using nonlocal elasticity and the first-order shear deformation theory (FSDT). The influence of structural defects on the vibration of graphene sheets is considered by applying the mechanical properties of defective graphene sheets. Afterwards, these equations solved using generalized differential quadrature method (GDQ). The small-scale effect is applied in the governing equations of motion by nonlocal parameter. The effects of different defect types are inspected for graphene sheets with clamped or simply-supported boundary conditions on all sides. It is shown that the natural frequencies of graphene sheets decrease by introducing defects to the atomic structure. Furthermore, it is found that the number of missing atoms, shapes and distributions of structural defects play a significant role in the vibrational behavior of graphene. The effect of vacancy defect reconstruction is also discussed in this paper.  相似文献   

19.
Post deposition treatment (PDT) for Cu2ZnSn(S,Se)4 (CZTSSe) was carried out by simply dipping the absorber into the KF solution at 80 °C. The dipping time of absorber in KF solution was found to be crucial to device parameters of CZTSSe solar cell. The K-doping improved the solar cell efficiency from 4.4% to 7.6% by 1 min dipping whereas the longer than 5 min dipping solar cells showed distorted kink J-V curves. The activation energy of CZTSSe solar cell was increased upto 1 min KF treatment from 0.83 eV to 0.92 eV which indicates interface recombination is reduced significantly. However, the activation energies of 5 min and 10 min dipping solar cells were found to be 0.81 eV and 0.63 eV where dominant recombination was interface recombination. Furthermore, trap energies of 49 meV and 298 meV of pristine CZTSSe solar cell were modified to 33 meV and 117 meV for 1 min treated CZTSSe solar cell. Trap energies of 5 min were calculated to be 112 meV and 147 meV. The proper KF doping passivated the shallow as well as deep defects of CZTSSe solar cell which is reflected in photovoltaic performances directly.  相似文献   

20.
《Current Applied Physics》2014,14(3):223-226
Negative photoconductivity (NPC) was observed in n-ZnO/p-Si heterojunction diode grown by ultra-high vacuum sputtering method under nitrogen ambient. Under the illumination of ultra-violet light, positive photoconductivity was observed at low bias voltages, whereas NPC was observed at high bias voltages. The defect states in the ZnO layers grown on Si were analyzed by photoluminescence and deep level transient spectroscopy measurements. Two deep levels were measured at Ec-0.51 eV and Ec-0.54 eV, which might be originated from oxygen vacancy and nitrogen atom related defects, respectively. Based on the simulation of band diagram, the defect states were located below Fermi level at zero bias voltage. However, as increasing the bias voltages, NPC was observed due to the increase of empty defect states. This analysis allowed us to consider the possibility that the NPC phenomenon in n-ZnO/p-Si heterojunction diode is originated dominantly from the defect states as a carrier recombination center in ZnO layer.  相似文献   

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