Charge tunneling and cross recombination at organic heterojunction under electric fields

Electroluminescence (EL) of bilayer organic light-emitting diodes based on N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) and 2-(4'-biphenyl)-5-(4”-tert-butylphenyl)-1,3,4-oxadiazole (PBD) were reported. The EL spectra of bilayer device ITO/TPD/PBD/Al consist of monomolecular emission from TPD, exciplex emission and charge carriers cross recombination at the TPD/PBD interface. By varying the thickness of each organic layer while keeping the thickness of the whole device constant, three kinds of bilayer devices were fabricated and their EL and photoluminescence spectra were compared with each other, and our experimental data show that charge tunneling and cross recombination coexist at the TPD/PBD interface, and these two processes compete with each other under high electric fields.     

Coherent resonant transport through a mesoscopic system with quantum ac microwave field

The time-dependent transport through an ultrasmall quantum dot coupling to two electron reservoirs is investigated. The quantum dot is perturbed by a quantum microwave field (QMF) through gate. The tunneling current formulae are obtained by taking expectation values over coherent state (CS), and SU(1,1) CS. We derive the transport formulae at low temperature by employing the nonequilibrium Green function technique. The currents exhibit coherent behaviors which are strongly associated with the applied QMF. The time-dependent currents appear compound effects of resonant tunneling and time-oscillating evolution. The time-averaged current and differential conductance are calculated, which manifest photon-assisted behaviors. Numerical calculations reveal the similar properties as those in classical microwave field (CMF) perturbed system for the situations concerning CS and squeezed vacuum SU(1,1) CS. But for other squeezed SU(1,1) CS, the tunneling behavior is quite different from the system perturbed by a single CMF through gate. Due to the quantum signal perturbation, the measurable quantities fluctuate fiercely. Received 28 May 1998     

Resonant enhancement of charge transfer through surface states

A model is proposed that treats electrons at surfaces as a combination of two-dimensional and three-dimensional degrees of freedom. This yields a simple formula for the surface state induced resonant enhancement of the transfer of electrons through a surface. The model also yields analytic approximations for the transition between two-dimensional and three-dimensional distance laws in the correlations between electrons in surface states. Received 6 August 2002 Published online 31 October 2002 RID="a" ID="a"e-mail: rainer@sask.usask.ca     

Transmission resonance via quantum bound states in confined arrays of antidots

We have studied the transmission resonances for a confined array of antidots, using the lattice Green's function method. Two kinds of resonant peaks via quasibound states are found. One kind of resonant peak corresponds to the split quasibound states. The split states originate from the superposition of quasibound states respectively localized in different (T or crossed) junctions, while the number of quasibound states in each junction is associated with the arm-width of the junction. Electrons in these split states are mainly localized in the junctions. The other kind of resonant peaks correspond to the high quasibound states which exist in (transverse and longitude) multi-period confined arrays of antidots. It is interesting to note that electrons in some of the high quasibound states are mainly localized in the intersection of the junctions rather than in the junctions themselves.     

Local triboelectricity on oxide surfaces

In triboelectric phenomena, electric charges are transferred when two materials are touched or rubbed together. We present in this paper a study of this effect performed on metallic oxides at the nanometric scale by an Atomic Force Microscope in the resonant mode. We show that following the electrification processes, positive or negative charges can be deposited. From our experimental data, we conclude that the charge transfer results in an equilibrium final state, the occupied states in the gap being “surface states” with large density and spread under the surface along a characteristic distance of about 100 nm. Received 18 March 1998 and Received in final form 8 July 1998     

Interplay of electronic,magnetic and structural properties of surface-supported clusters

We present first theoretical evidence revealing the influence of structural changes on the spin-polarized surface states of large Co nanoislands grown on Cu(111). The minority density of electronic states possesses a pronounced peak whose energetic position depends sensitively on the Co layers stacking order. Our results suggest a way to deduce the stacking order of large Co nanoislands using scanning tunnelling microscopy/spectroscopy.     

Coherent transport through intramolecular junction of single-wall carbon nanotubes

We have constructed four types single-wall carbon nanotube intramolecular junctions (IMJs) of (5,5)/(8,0), (5,5)/(10,0), (5,5)/(9,0)A, and (5,5)/(9,0)B along a common axis, and calculated their electronic and transport properties using a tight binding-based Green's function approach that is particular suitable for realistic calculation of electronic transport property in extended system. Our results show that quasi-localized states can appear in the metal/semiconductor heterojunctions ((5,5)/(8,0) and (5,5)/(10,0)junctions), which is desirable for the design of a quantum device; and the conductance of M-M IMJs is very sensitive to the connectivity of the matching tubes, certain configurations of connection completely stop the flow of electron, while others permit the transmission of the current through the interface. These results may have implications for the device assembly and manipulation process of all carbon nanotubes-based microelectronic elements. Received 14 January 2003 / Received in final form 25 February 2003 Published online 4 June 2003 RID="a" ID="a"e-mail: lfyzz@yahoo.com.cn     

Location of the minimum of the differential tunneling resistance in a superconductor-degenerate semiconductor Schottky contact

Measurements of differential resistance in a superconductor-degenerate semiconductor junction Nb - n ^{+ +} GaAs at T = 1.6 K show close similarity to those for a conventional superconductor-insulator- normal metal junction, except for the position of the minimum which is located at 3.6 meV. Using a simple model for the charge screening at the Schottky barrier, we give an argument why this minimum is by far displaced with respect to the superconducting gap energy ( Δ _g = 1.5 meV for bulk Nb). We argue that a rebuilding of the density of states takes place at the barrier, due to the imperfect metal screening in the degenerate semiconductor. Energy states close to the degenerate semiconductor Fermi energy are depleted at the barrier and are not available for tunneling, up to an energy E_g which adds to the superconducting gap Δ _g . Received 11 November 2002 / Received in final form 21 February 2003 Published online 11 April 2003 RID="a" ID="a"e-mail: c.nappi@cib.na.cnr.it     

Cyclotron resonance of a polaron in a realistic heterojunction and its pressure effect

The Larsen perturbation method is adopted to study the influence of magnetic fields on polarons in realistic heterojunctions in a quasi-two-dimension approximation. The interaction between an electron and both the bulk longitudinal optical phonons and the two branches of interface optical phonons is taken into account to show the influence of magnetic fields at different ranges on the polaron cyclotron mass due to the coupling of the electron with each branch of phonon modes. The result indicates that not only do the bulk phonons influence the polaron cyclotron mass, but the interface phonons do as well. The pressure effect on the cyclotron mass is also discussed.     

Wigner lattice of ripplopolarons in a multielectron bubble in helium

The properties of ripplonic polarons in a multielectron bubble in liquid helium are investigated on the basis of a path-integral variational method. We find that the two-dimensional electron gas can form deep dimples in the helium surface, or ripplopolarons, to solidify as a Wigner crystal. We derive the experimental conditions of temperature, pressure and number of electrons in the bubble for this phase to be realized. This predicted state is distinct from the usual Wigner lattice of electrons: it melts by dissociation of the ripplopolarons when the electrons shed their localizing dimple as the pressure on the multielectron bubble drops below a critical value. Received 20 February 2003 Published online 11 April 2003 RID="a" ID="a"Also at: TU Eindhoven, Eindhoven, The Netherlands e-mail: devreese@uia.ua.ac.be