On the quantum limit behaviour of the magnetoresistance in non-parabolic semiconductors

The quantum limit behaviour of the magnetoresistance in narrow-gap semiconductors is investigated. The non-parabolicity of the energy dispersion is taken into account in the density of states. Assuming constant level broadening, both the longitudinal and the transverse magnetoresistance obey asymptotic power laws. The exponents in these power laws are found to be larger than in the case of parabolic energy dispersion.     

On the electron energy spectrum in heavily doped non-parabolic semiconductors

An attempt is made to present a simple theoretical analysis of the energy-wave vector dispersion relation of the conduction electrons in heavily doped non-parabolic semiconductors forming band tails. We observe that the complex energy spectrum in doped small-gap materials whose unperturbed conduction band is described by the three band model of Kane is due to the interaction of the impurity atoms in the tail with the spin-orbit splitting constant of the valence band (Δ), For band-gap (E_g)<Δ the imaginary part predominates which tails in to the conduction band. For the opposite inequality the real part comes in to play which tails in to the split-off band. In the absence of the band tailing effect, the imaginary part of the complex energy spectrum vanishes and the same is also true for doped two-band Kane-type and parabolic energy bands respectively. The present formulation helps us in investigating the Boltzmann transport equation dependent transport properties of degenerate semiconductors and are expected to agree better with experiments. The well-known results of unperturbed three and two band models of Kane together with wide-gap parabolic energy bands have been obtained as special cases of our generalized analysis under certain limiting conditions.     

Effect of size quantization on the Einstein relation in ultrathin films of non-parabolic semiconductors

An attempt is made to investigate the effect of size quantization on the diffusivity-mobility ratio of the carriers in ultrathin films of semiconductors having Kane-type nonparabolic energy bands. It is shown, takingn-type InSb as an example, that the ratio oscillates both with increasing film thickness and with increasing carrier concentration under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.     

Analysis of the modulated photocurrent in amorphous semiconductors

The modulated photocurrent in amorphous semiconductors is studied by solving the rate equations for the trap-limited case on a simplified model. It is clarified that the phase shift consists of two parts. One of them is related with the photocarrier generation processes and the other with the transport processes. The analytical result can explain quantitatively the measured phase shift of amorphous As₂Se₃.     

Phase amplitude decoupling in modulated structures

We examine under what conditions phase and amplitude modulations are decoupled in a modulated structure, within a Landau Ginzburg approach. For the general case of a pth order commensurability, the condition for phase amplitude decoupling depends on the leading anharmonic terms in the Landau Ginzburg free energy. For a 2Mth order leading anharmonic term, the case p = 2M is a border line case. For p > 2M, phase and amplitude are decoupled near the disordered-incommensurate transition temperature, while they are not for p < 2M. In the latter case decoupling occurs at lower temperatures. We discuss the case of deuterated thiourea, which exhibits a commensurate pinning for p = 9 at T = 191 K.     

A simple analysis of the subband energies in quantum-confined non-parabolic semiconductors in the presence of a parallel magnetic field

Summary We study the subband energies in quantum wells and quantum wires in the presence of a parallel magnetic field in non-parabolic semiconductors, on the basis of a generalized dispersion relation considering all types of anisotropies of the energy-band parameters within the framework ofk·p formalism, by formulating the respective electron energy spectra. It is found, by takingn-Cd₃As₂ as an example, that the subband energies are greater for quantum wires and smaller for quantum wells, respectively. The magnetic field diminishes the above values and the corresponding well-known results for quantum-confined parabolic semiconductors have also been obtained from our generalized expressions under certain limiting conditions.     

On the theory of electron diffusion under a temperature gradient in degenerate semiconductors having non-parabolic energy bands

The theory of electron diffusion under a temperature gradient (Soret effect) in degenerate semiconductors having non-parabolic energy bands and spherical constant-energy surfaces is worked out for the first time. An expression is given for the Soret coefficient which may be determined from the knowledge of the energy dependence of the relaxation time and can be related to the thermoelectric power.     

Effect of linewidth on the phaseshifts in the scattering of weakly amplitude modulated light

When light which is weakly modulated in amplitude is scattered from a two-level system a phase-shift occurs. We have calculated this phase-shift for a Lorentzian lineshape, and find it depends strongly on linewidth. Expressions are given which would enable a realistic comparison between theory and experiment to be made.     

On the relation between the fermi energies in the presence and absence of magnetic quantization in degenerate semiconductors having non-parabolic energy bands

An investigation is made of the influence of band non-parabolicity on the relation between the Fermi energies in the presence and absence of magnetic quantization in degenerate semi-conductors through derivation of a simplified form of the relation.On leave of absence from theDept. of Physics, B. N. College, Patna University, Patna 800004.     

影响宽带幅度调制信号检测的因素分析

通过推导宽带解调处理的输出信噪比公式,系统地分析了影响幅度调制的宽带信号检测的各种因素。分析表明,宽带调制信号检测性能取决于以下因素:信号的周期调制的深度、前置处理器带通滤波器的带宽、调制噪声在总的噪声中的比重、采样速率,以及计算解调谱时的傅里叶变换的长度、降样倍数、时间窗、数据块重叠程度以及平均次数。     

A perturbative analysis of modulated amplitude waves in Bose-Einstein condensates

We apply Lindstedt's method and multiple scale perturbation theory to analyze spatio-temporal structures in nonlinear Schr?dinger equations and thereby study the dynamics of quasi-one-dimensional Bose-Einstein condensates with mean-field interactions. We determine the dependence of the amplitude of modulated amplitude waves on their wave number. We also explore the band structure of Bose-Einstein condensates in detail using Hamiltonian perturbation theory and supporting numerical simulations.     

Back reflection effect at the fundamental edge of semiconductors in modulated reflectivity measurements

Reflectivity and modulated reflectivity spectra are simulated at the fundamental edge of semiconductors when the back surface of the crystal is taken into account. It is demonstrated that this could give rise to important additional structures, frequently observed but only qualitatively interpreted in most cases. Some expected shapes are presented, arising from direct or indirect absorption with exciton formation. Even if back reflection effects are undesirable in reflectivity experiments, some interesting information could easily be extracted from the spectra, especially for the indirect exciton case.     

调制振幅对粒子布居几率振荡的影响

为探讨调频场导致的量子效应的物理本质,运用密度矩阵方程和布洛赫矢量模型,对调频场作用下二能级原子系统中的粒子布居几率振荡现象进行了理论分析,讨论了光场调制振幅对振荡过程的影响。理论计算结果表明,光场调制振幅对粒子布居转移和几率振荡有较大的调制作用。当其他参量不变时,随着调制振幅的增大,粒子布居几率振荡减弱,布居转移效率增高,吸收增强。布洛赫矢量分析表明,该振荡过程是系统粒子数转移、吸收和极化三者之间的动态变化过程。     

一种宽带幅度调制信号的自动检测方法

给出了一种自动检测解调谱线谱的方法。该方法是一种双门限检测过程,首先通过选择低的检测门限和利用线谱的形状特点进行线谱识别来完成第一次检测,延迟一段时间后利用该时刻前后多个时刻的解调谱的线谱识别情况剔除噪声、自动生成中间丢失的线谱来完成第二次检测。分析表明,此线谱检测方法并不需事先知道调制信号的幅值、根数、位置、起止时间等信息,却能在低信噪比下自动地以高检测概率和低虚警概率检测解调谱的线谱。     

Acousto-optic amplitude modulation and demodulation of electromagnetic wave in magnetised diffusive semiconductors

Using hydrodynamical model of semiconductor plasma analytical investigations are made for the amplitude modulation as well as demodulation of an electromagnetic wave in a transversely magnetised acousto-optic semiconducting plasma. The inclusion of carriers diffusion adds new dimension in the analysis presented here. Analysis are made under different wave number regions over a wide range of cyclotron frequency. It has been seen that diffusion of charge carriers modifies amplitude modulation and demodulation processes effectively. Numerical estimations are made for n-InSb crystal irradiated by pump wave of frequency 1.6 T s^-1. Complete absorption of the waves takes place in all the possible wave lengths regimes when the cyclotron frequency becomes exactly equal to (v ² + )^1/2. Received 28 February 2002 Published online 19 July 2002     

光折变晶体中高速调制光简并四波混频特性的研究

本文对光折变晶体中高速调制光简并四波混频过程的特性进行了理论分析、给出了在Ce:SBN晶体中进行的实验结果;并指出,光折变晶体中的简并四波混频可应用于消空间畸变的时域编码通信和双向时域信息的传输、放大。     

Simple theoretical analysis of the thermoelectric power in quantum dot superlattices of non-parabolic heavily doped semiconductors with graded interfaces under strong magnetic field

We study theoretically the thermoelectric power in the presence of a large magnetic field (TPM) in heavily doped III–V, II–VI, PbTe/PbSnTe, strained layer and HgTe/CdTe quantum dot superlattices (QDSLs) with graded structures on the basis of newly formulated electron energy spectra and compare the same with that of the constituent materials. It has been found, taking heavily doped GaAs/Ga_1−xAl_xAs, CdS/CdTe, PbTe/PbSnTe, InAs/GaSb and HgTe/CdTe QDSLs as examples, that the TPM increases with increasing inverse electron concentration and film thickness, respectively, in different oscillatory manners and the nature of oscillations is totally band structure dependent. We have also suggested the experimental methods of determining the Einstein relation for the diffusivity–mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws.     

染料聚合物工艺母盘刻录坑形对读出信号调制幅度的影响分析

与光刻胶工艺相比,染料聚合物工艺母盘刻录的光盘坑形有很大区别。在已知文献中对坑点形貌与读出信号关系的研究结果已不再有效。使用基于角谱分解的衍射理论,利用原子力显微镜得到的坑形,对两种工艺光盘的调制幅度参数进行了仿真。仿真结果表明,对染料聚合物工艺而言,在较小的深度和宽度下能获得与光刻胶工艺光盘相当的调制幅度。对实际光盘几何尺寸和电信号参数的测试结果证明了仿真结果的正确性。     

Waveform of the amplitude modulated laser light by means of a mechanical chopper

The model which reproduces accurately and conveniently the waveform of the amplitude modulated cw laser light in the TEM₀₀ mode by a mechanical chopper is developed. It is found that its predictions are in good agreement with the strict, completely accurate but rather lengthy and inconvenient treatment and with the experiment. The criterion for the efficient amplitude modulation of the laser light by a mechanical chopper is formulated.     

On the electronic contribution to the elastic constants in strained quantum wire superlattices of non-parabolic semiconductors with graded structures: Theory and suggestion for experimental determination

Summary  We study the electronic contribution to the second- and third-order elastic constants in strained quantum wire superlattices of non-parabolic semiconductors with graded structures and compare the same with the constituent materials, by formulating the appropriate dispersion laws. It is found, taking InSb/GaSb quantum wire superlattice as an example, that the said contributions increase with decreasing thickness and with increasing electron concentration in oscillatory manners together with the fact that the influence of the finite interface width enhances their numerical values. An experimental method is suggested for determining the electronic contribution to the elastic constants in materials having arbitrary dispersion laws. In addition, the well-known results for constituent semiconductors in the absence of stress have also been obtained as special cases of our generalized formulations.