表面包覆的SnO2纳米微粒的红外振动特征

测定了裸的和表面包覆有阴离子表面活性剂的ＳｎＯ２纳米微粒的红外吸收光谱。发现后者存在着一个随频率升高而增大的红外背景吸收带，其强烈影响材料的各振动模式的红外吸收强度，并对此现象进行了初步解释。     

气相合成SnO2超微粒薄膜研究

用直流气体放电活化反应蒸发法在玻璃基片上沉积的SnO2超微粒薄膜,研究其过程中各工艺参数对薄膜结构的影响及作用机理,结果表明,SnO2超微粒薄膜粒径随氧分压增加而增大;蒸镀时间的延长有助于SnO2的生成,也使薄膜发生晶化;而增加放电电压,则薄膜出现外延单晶生长趋势。     

SnO2纳米晶的水热合成及其气敏特性

以SnCl2·2H2O和H2O2为主要原料,在无水乙醇和水的混合溶剂中,不同温度下,水热法制备了不同粒径的SnO2纳米晶.利用X射线粉末衍射、透射电子显微镜和比表面积测定等手段对产物进行了表征,并对产物的气敏性进行了测定和分析.结果表明,120、150和180℃时制备的产物均为单相SnO2,其对应的比表面积分别为210.3、125.6和69.2m2/g.产物SnO2对还原性气体CO和C2H5OH均有一定的气敏性,其中对C2H5OH气体的气敏性远大于CO气体.产物气敏性的大小与其比表面积的大小有关,比表面积越大,气敏性越高.     

纳米微粒SnO2非线性光学特性的Z—扫描技术研究

利用Ｚ－扫描技术，以调ＱＮｄ：ＹＡＧ激光器作光源，首镒在非共振区域研究了ＳｎＯ２纳米微粒的三阶非线性光学性质，获得了三阶非线性极经系数ｘ＾（３）与双光子吸收系数β等重要依据，并对其非线性响应机制进行了探讨。     

SnO2微纳米材料的合成及其生长机理研究

利用简单的化学气相沉积法,以Sn粉为源材料合成不同形貌的一维SnO2纳米棒、纳米线和纳米花等纳米结构,并通过减小载气中的氧含量获得新颖的SnO2亚微米环状结构.通过调节Sn粉的量和载气中的氧含量、升温速率等试验条件,有效实现SnO2一维纳米结构的控制生长.采用扫描电子显微镜、能谱仪和X射线衍射仪表征产物形貌、成分和物相结构,并探讨了SnO2微纳米材料的生长机理.     

SnO2纳米粒子膜的性质和结构研究

用胶体化学法制得的ＳｎＯ２的水溶胶在其与空气的界面上能自发形成一层固态膜，将陈化不同时间的界面膜转移出来，采用紫外－可见光谱、Ｘ光电子能谱、椭圆偏振、ＴＥＭ以及ＡＦＭ等手段进行了表征。结果发现：界面膜有一个从无到有、达到稳定的过程，稳定时膜厚约为２０ｎｍ；采取垂直方式转移出来的膜质量较好，致密、粒子分布均匀、团聚程度小；膜中ＳｎＯ２纳米粒子是非化学计量比的，存在大量氧空位，随膜在空气中放置时间的增     

半导体SnO2纳米微粒的光学特性

通过测量具有表面化学修饰的SnO_2纳米微粒的吸收光谱、激发光谱和荧光光谱:研究了量子尺寸效应和介电限域效应对其光学特性的影响,探讨了产生这些影响的物理机制。 关键词：     

氧化镁纳米分级结构的合成及生长机理分析

采用气相合成技术合成了MgO三维纳米分级结构.该结构由纳米线、纳米棒、纳米丝3部分组成.高分辨电镜照片显示第一级纳米线的生长方向为[100],纳米棒与纳米丝呈四次对称分布在纳米线的侧面,其生长方向为[110].沉积区的高温和适当的反应物对三维分级纳米结构的形成起了决定性作用,气固生长模式和气液固生长模式共同主导了三维分级纳米结构形成.     

纳米二氧化钛的量子尺寸效应及掺杂氧化锡对其光吸收的影响

采用溶胶 -凝胶法制备了量子尺寸的纳米氧化钛和锡掺杂的纳米氧化钛 ,经过不同温度的热处理得到不同尺寸的粉末样品 .通过X射线衍射 (XRD)和电子衍射 (ED)表征了不同样品的物相组成和粒径 (3～ 12nm) ,通过反射谱 (RS)深入研究了纳米氧化钛的量子尺寸效应及掺杂氧化锡对于纳米氧化钛光吸收性质的影响 .实验结果表明纳米氧化钛有明显的光吸收量子尺寸效应 ,掺杂氧化锡促进了二氧化钛的锐钛矿向金红石相的转变 ,降低了相变起始温度 .由于相变和尺寸变化两方面相反的作用 ,掺杂氧化锡对于二氧化钛光吸收边的位移影响不大     

Co3O4掺杂SnO2体系的乙醇和丙酮气敏特性

通过研磨、涂浆和700 ℃ 烧结3 h的方法， 得到了一系列Co3O4掺杂的SnO2纳米颗粒厚膜． 发现在300 ℃ 的工作温度下复合膜对乙醇和丙酮表现了很好的气敏性质， 尤其是在摩尔比Co/Sn为5%时效果达到最好． 对1000 ppm的乙醇和丙酮的灵敏度分别为301和200，为没有Co掺杂时的SnO2时的7倍和5倍．同时，Co3O4的掺杂没有使得对H2的灵敏度有很大的提高，即提高了乙醇和丙酮对氢气的选择性．最后讨论了提高气敏性能的机制．     

Structural and photoluminescence properties of SnO2 obtained by thermal oxidation of evaporated Sn thin films

Tin oxide films have been prepared by oxidation of Sn thin films deposited by thermal evaporation method onto glass substrates. The oxidation of films was done, in air at a temperature of 500 °C, from 20 to 120 min. The oxidized films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), photoluminescence spectroscopy (PL) and surface profilometer. The XRD patterns show that the crystalline structure of the oxidized Sn films improves with the annealing time. The tetragonal SnO₂ phase (cassiterite) was obtained after 120 min of annealing with grains sizes between 15 and 20 nm. The thickness of oxide films, as function of the annealing time, follows a parabolic law. The O/Sn atomic ratio increases with the annealing time indicating an improvement of the films quality. Tin interstitials defects density, calculated from PL spectra using Smakula's formula, was found to decrease with the increasing annealing time. Tin interstitials defects density was found proportional to the increasing oxygen density (deduced from RBS). A fit of this proportionality allowed us to quantify the tin cations and oxygen anions diffused through the oxide films.     

Lithium-7 NMR investigation of electrochemical reaction of lithium with SnO

We report on solid state ⁷Li NMR measurements of electrochemically lithiated SnO. At low Li contents (Li/SnO≤2), the results are consistent with the formation of amorphous Li₂O. For Li/SnO ratio of 4.3, in addition to the amorphous Li₂O phase, there are at least two distinct Sn/Li alloy environments which are similar to those observed in a reference Li_2.3Sn alloy. However the Li⁺ environments in a sample with Li/SnO ratio equal to 6.4 and an Li_4.4Sn reference alloy differ markedly. The NMR data are thus consistent with the simple model of Li insertion proposed by other groups, involving the formation of Li₂O and Li_xSn alloys (SnO+xLi→Li₂O+Li_x−2Sn), at low and intermediate Li contents. At high Li content, however, the Li_x−2Sn alloy structure is significantly different in the electrochemically lithiated SnO material, compared to that in the reference alloy.     

Vacancy-like defects in nanocrystalline SnO2: influence of the annealing treatment under different atmospheres

The study of electronic and chemical properties of semiconductor oxides is motivated by their several applications. In particular, tin oxide is widely used as a solid state gas sensor material. In this regard, the defect structure has been proposed to be crucial in determining the resulting film conductivity and then its sensitivity. Here, the characteristics of vacancy-like defects in nanocrystalline commercial high-purity tin oxide powders and the influence of the annealing treatment under different atmospheres are presented. Specifically, SnO₂ nanopowders were annealed at 330 °C under three different types of atmospheres: inert (vacuum), oxidative (oxygen) and reductive (hydrogen). The obtained experimental results are discussed in terms of the vacancy-like defects detected, shedding light to the basic conduction mechanisms, which are responsible for gas detection.     

Ammonia gas sensor based on SnO2 nanostructure with the enhanced sensing capability at low temperatures

ABSTRACT

We investigated the gas-sensing performance of tin oxide nanowires for ammonia gas at low temperature (～ 50°C). Tin oxide nanostructures were deposited at 1000°C and 1100°C on gold-coated silicon substrates using the physical vapor deposition method. Gas-sensing measurements were made for ammonia gas at various strengths (i.e. 50, 100 and 200?ppm) and the sensing performance was compared at low temperature for both the samples e.g. nanostructures deposited at 1000°C and 1100°C. Due to the highly oriented structure, the sample deposited at 1000°C shows high sensing capability at low temperature as compared to the regular tetragonal phase observed at 1100°C. The morphological and structural properties of nanowires were systematically examined using the scanning electron microscopy and X-ray diffraction.     

High Photosensitivity in SnO 2 :SiO 2 Optical Fibers

Enhanced photosensitivity has been achieved in tin-doped silica optical fibers. Refractive index modulations (~3 . 10 -4 ) have been achieved by use of 248 nm UV radiation. Studies performed on preform slides proved that the refractive index change can be ascribed to structural rearrangements induced by photochemical reactions. The modified structure has shown extreme stability, and gratings written in this fiber start to be erased above 600°C. Exposure of the fiber to 255 nm laser radiation showed that, at high fluence, the refractive index modulation saturates and does not exhibit any sign of decrease.     

Investigation of IrO2-SnO2 thin film evolution from aqueous media

The thermal evolution process of IrO₂-SnO₂/Ti mixed oxide thin films of varying noble metal content has been investigated under in situ conditions by thermogravimetry-mass spectrometry, Fourier transform infrared emission spectroscopy and cyclic voltammetry. The gel-like films prepared from aqueous solutions of the precursor salts Sn(OH)₂(CH₃COO)_2−xCl_x and H₂IrCl₆ on titanium metal support were heated in an atmosphere containing 20% O₂ and 80% Ar up to 600 °C.The thermal decomposition reactions practically take place in two separate temperature ranges from ambient to about 250 °C and between 300 and 600 °C. In the low temperature range the liberation of solution components and - to a limited extent - an oxidative cracking reaction of the acetate ligand takes place catalyzed by the noble metal. In the high temperature range the evolution of chlorine as well as the decomposition of surface species formed (carbonyls, carboxylates, carbonates) can be observed. The acetate ligand shows extreme high stability and is decomposed in the 400-550 °C range, only.Since the formation and decomposition of the organic surface species can significantly influence the morphology (and thus the electrochemical properties) of the films, the complete understanding of the film evolution process is indispensable to optimize the experimental conditions of electrode preparation.     

Study of structural, optical and electrical properties of ZnO and SnO2 thin films

The investigation of structure, optical and electrical properties of tin and zinc oxide films on glass substrates by using magnetron sputtering are carried out. X-ray data show the formation of textured tin oxides film during deposition and its transformation to SnO₂ polycrystalline film at low temperature (200 C) if the concentration of oxygen in the chamber is high (O₂ — 100%, Ar — 0%). Optimal conditions of SnO₂ polycrystalline film deposition (pressure of Ar–O₂ mixture in chamber — 2.7 Pa, concentration of O₂ — 10%) are determined. Low resistivity of as-deposited ZnO film and increasing ZnO crystallite sizes and phase volume at temperatures higher than the melting point of Zn (419.5 C) are explained by formation of conductive Zn and ZnO particle chains and their destruction, respectively.