Physics,and transistors in computers

The spectacular success of the transistor in making a steady stream of increasingly powerful and affordable digital computers available through the 50 years since its invention is well known. Yet in spite of this remarkable record the same fifty years has witnessed a continuing series of proposals for replacing the transistor in computing systems with some other device. The tunnel diode and Josephson devices are notable examples. Some of these proposals have attracted many millions of pounds of industry and government support. Yet none has had any effect on computing technology. The problem of the many alternatives is that they do not use quantitative standard signals to represent digits; in other words, they are not truly digital.     

Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

A new bipolar transistor with a 20-period i-AlInAs/n⁺-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter–base p–n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (90 mV) is achieved at room temperature.     

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents a strong challenge for silicon process technology. One of the key steps of the process consists in shrouding the silicon fins in an isolating matrix, using a flowable oxide, namely hydrogen silsesquioxane (HSQ). The general objective of this work is to show that the properties of HSQ can be modified by appropriate thermal or plasma treatments to modulate its characteristics in terms of etching selectivity and surface topography. SEM characterization has shown that HSQ exhibits excellent planarization and gap fill capabilities, while AFM analysis, on 100 nm thick HSQ films deposited by spin on, reveals a roughness as low as 3 nm. Various oxygen plasma treatments have been applied to densify the HSQ films. Fourier transform infra-red spectroscopy (FT-IR) has shown very interesting qualitative and quantitative informations. Chemical and physical transformations from a Si-O-Si cage-like structure into an Si-O-Si network one have been observed. It is shown that exposure to oxygen plasma at high power (290 W) for a long time (20 min) or thermal curing at high temperature improves the resistance to wet etching using 1% hydrofluoric acid (HF). This densification technique holds the remarkable property to transform HSQ into an SiO₂-like structure.     

SET-MOS混合结构的细胞神经网络及其应用

基于细胞神经网络（CNN）细胞单元的等效电路及其电学特性模型,利用SET-MOS混合结构反相器实现了模型中的激活函数电路,用耦合电容单元实现CNN细胞的系统模板,构建了SET-MOS CNN细胞硬件电路,并将其应用在图像处理中.仿真结果表明,所设计的CNN硬件电路具有结构简单、功耗低、响应速度快等特点,可用于构成各种规模的CNN电路,进一步满足大规模信号处理的需求及提高集成电路的集成度. 关键词： 单电子晶体管 MOS管 细胞神经网络 图像处理     

Air stability of PTCDI‐C13‐based n‐OFETs on polymer interfacial layers

This Letter reports the novel use of poly(9‐vinylcarbazole) (PVK) as a dielectric interfacial layer for n‐type organic field‐effect transistors (n‐OFETs). With PVK, both the air stability and electron mobility of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OFETs were improved. Among the PVKs with different weight‐average molecular weight (M_w), PVK with high M_w showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm²/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI‐C13‐based n‐OFET for air‐exposure and caused a decrease in the threshold voltage shift.

     

基于碳纳米管场效应管构建的纳电子逻辑电路

展示了由碳纳米管场效应管构成的三种逻辑电路，分别为单个p型碳纳米管场效应管的开关电路、由集成在同一片硅片上的单个p型碳纳米管场效应管和单个n型掺氮碳纳米管场效应管构成的互补型反相器，以及两个独立的p型碳纳米管场效应管构成的或非门. 其中p型碳纳米管场效应管以单壁碳纳米管作为沟道，而n型碳纳米管场效应管则以掺氮的多壁碳纳米管作为沟道，器件的源漏电极均为铂电极. 关键词： 碳纳米管 场效应管 逻辑电路     

用晶体管开关电路测量介电常数

本文介绍一个实用的晶体管开关电路（如图１），用它能够很准确地测定出电容和介电常数。     

雪崩三极管串联的纳秒脉冲发生器

雪崩三极管因其快速性、高重复频率等特点被广泛应用于纳秒脉冲发生器。为了提高输出电压,常采用多管串联Marx电路。采用二极管代替传统多管串联Marx电路中的部分限流电阻以减少能量损耗,加快充电速度,提高重复频率,并分析了主电容和限流电阻对输出脉冲幅值和频率的影响。通过雪崩三极管的单管击穿实验,单个三极管的导通内阻最小约为2.5 Ω,多管串联Marx电路中的等效内阻使负载侧的输出电压降低,故采用多路Marx并联电路以提高输出电压幅值。通过改变Marx并联模块数量,研究了电路等效内阻对输出脉冲的影响;通过改变负载电阻值,验证了Marx并联电路在小负载下升压效果更佳。实验结果表明,通过相同的4路Marx并联电路进行放电实验,在50 Ω负载侧输出上升沿为3.4 ns、幅值为2.5 kV、可在15 kHz下稳定工作的脉冲。     

使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究

为了实现氧化物薄膜晶体管(TFT)的低电阻布线,采用Cu作为氧化物TFT的源漏电极。通过优化成膜工艺制备了电阻率低至2.0μΩ·cm的Cu膜,分析了Cu膜的晶体结构、粘附性及其与a-IZO薄膜的界面,制备了以a-IZO为有源层和Cu膜的粘附层的TFT器件。结果表明:所制备的Cu膜呈多晶结构;引入a-IZO粘附层增强了Cu膜与衬底的粘附性;同时,Cu在a-IZO中的扩散得到了抑制。所制备的TFT的迁移率、亚阈值摆幅和阈值电压分别为12.9 cm2/(V·s)、0.28 V/dec和-0.6 V。     

Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n + interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.     

Microwave damage susceptibility trend of bipolar transistor as a function of frequency

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n⁺ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and the frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.     

Charge sensitivity of single-electron transistor with superconducting electrodes

The noise-limited charge sensitivity of a single-electron transistor with superconducting electrodes operating near the threshold of quasiparticle tunneling, can be considerably higher than thatof a similar transistor made of normal metals or semiconductors. The reason is that the superconducting energy gap, in contrast to the Coulomb blockade, is not smeared by the finite temperature. The same reason leads to the increase of the maximum operation temperaturedue to superconductivity.     

超结硅锗碳异质结双极晶体管机理研究与特性分析优化

提出一种超结硅锗碳异质结双极晶体管(SiGeC HBT)新结构.详细分析了新结构中SiGeC基区和超结结构的引入对器件性能的影响,并对其电流输运机制进行研究.基于SiGeC/Si异质结技术,新结构器件的高频特性优良;同时超结结构的存在,在集电区内部水平方向和垂直方向都建立了电场,二维方向上的电场分布相互作用大大提高了新结构器件的耐压能力.结果表明:超结SiGeC HBT与普通结构SiGeC HBT相比,击穿电压提高了48.8%;更重要的是SiGeC HBT器件中超结结构的引入,不会改变器件高电流增益、高频率特性的优点;新结构器件与相同结构参数的Si双极晶体管相比,电流增益提高了10.7倍,截止频率和最高震荡频率也得到了大幅度改善,很好地实现了高电流增益、高频率特性和高击穿电压三者之间的折中.对超结区域的柱区层数和宽度进行优化设计,随着柱区层数的增多,击穿电压显著增大,电流增益有所提高,截止频率和最高震荡频率减低,但幅度很小.综合考虑认为超结区域采用pnpn四层结构是合理的.     

An alternative method for using bipolar junction transistors as a radiation dosimetry detector in breast cancer treatment

Silicon photodetectors and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are frequently used devices for measuring ionizing radiation in health physics instrumentation. The Bipolar Junction Transistor (BJT) is not a typical device used as a detector for measuring some physical quantities in radiotherapy beams due to its loss of sensitivity to ionizing radiation, as a consequence of radiation damage in the silicon semiconductor substrate. Actually, the know-how of the BJT characteristic curves and its response to ionizing radiation leads us to suggest an alternative method to estimate the radiation dose value in breast cancer treatments. The BJT parameter to be evaluated before and after the irradiation procedure is the BJT amplification factor, also called DC gain β. In this work, the study was done using a BJT known as Darlington type, within an Alderson Rando anthropomorphic phantom. Darlington transistors have very high gain and this feature allowed that the BJT gain changes to be correlated with the dose of the radiation beam. The results indicate that this new method could be an alternative option to estimate the dose value in the phantom for measurements in breast cancer radiotherapy.     

High-temperature single-hole silicon transistors

We present high-temperature (77 K, 300 K) single-hole n⁺–p⁺–n transistors based on silicon diffusion nanostructures. This is made possible by utilizing a quantum wire with isolated quantum dots, which is naturally formed inside an ultrashallow p⁺-diffusion profile using nonequilibrium diffusion processes.     

薄膜热处理对ZnO薄膜晶体管性能的提高

制备了两种以SiO2为绝缘层的底栅ZnO薄膜晶体管,分别以未退火和退火处理的ZnO薄膜作为有源层.与未退火处理的ZnO薄膜晶体管相比,退火处理的ZnO薄膜晶体管的饱和迁移率由2.3 cm2/(V·s)增大至3.12 cm2/(V·s),阈值电压由20.8V减小至9.9V,亚阈值摆幅由2.6 V/dec减小至1.9 V/...     

Unified physical and model representation of the magnetosensitive properties of bipolar transistor structures

The main physical mechanisms of operation of bipolar semiconductor transistor structures referred to as bipolar magnetosensitive structures (BMS) are analyzed. It is demonstrated that vertical magnetosensitive structures must be excluded from the BMS class, whereas horizontal structures form one class from the viewpoint of model representations irrespective of the direction of their magnetic axis. The mechanisms of BMS sensitivity in which the determining parameter is the mobility of carriers admit a common model representation and hence can be considered as a common redistribution mechanism. The BMS magnetic sensitivity, when estimating its conversion efficiency, is sufficiently correctly described by the one-dimensional continuity equation irrespective of the concrete boundary conditions. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 58–66, January, 2009.     

双极型晶体管高功率微波的损伤机理

在模拟集成电路的抗高功率微波加固研究中,对电路中的单个晶体管进行高功率微波损伤机理研究。对晶体管进行洲入微波损伤效应实验和失效分析,得到了双极型晶体管损伤的基本规律。损伤效应实验采用注入法,分别从晶体管的三极注入微波,得到了损伤结果。对样品进行的失效分析探明了器件的损伤部位和失效机理。结果表明,高功率微波注入主要造成B-E结的退化和损伤;从基极注入微波最易损伤晶体管,而从集电极注入则相反。     

肖克莱与半导体科学技术的发展

文章介绍了肖克莱的生平事迹及其在物理学上取得的成就,着重论述了他提出的晶体管理论以及据此发明的晶体管对后世的影响,指出肖克莱提出的晶体管理论奠定了今天半导体科学技术发展的基础。     

Composition influence of SiNx gate insulator fabricated by radio frequency (RF) Magnetron sputtering on characteristics of organic thin-film transistors

To investigate the effect of composition of SiNx on the properties of organic thin-film transistors (OTFTs), we fabricated bottom gate top contact OTFTs devices with different composition SiNx gate insulator. Pentacene based OTFTs with SiNx insulator, prepared using an interface modification process of UV-ozone treatment, exhibited effective mobility of 0.63 cm2/Vs and on/off current ratio of 10⁵. Overall improvement in field-effect mobility, threshold voltage was observed as silicon content in SiNx increases. The results demonstrate that the viability of using SiNx for OTFTs and of UV-ozone treatment could be used to improve the properties of organic thin-film transistors. The dependence of the contact angle on the SiNx film composition is evident for the untreated samples, the contact angle increases as the silicon content in the untreated nitride film increases. In contrast, the rise in contact angle across all samples after surface treatment signifies effective surface modification to promote hydrophobicity of the nitride surface. The hydrophobic surface is needed for the organic semiconductor.