双补偿法测低电阻和高电阻

在本刊1991年第2期上所载拙作《双补偿法测电阻》一文中,曾提及“从原理上讲,本线路可测低、中、高的电阻”。对测量中值电阻已作了较详细的叙述,而对测量低电阻和高电阻没有予以讨论。本文加以补述。自从1826年建立欧姆定律以来,人们测     

用单臂电桥测量接线电阻和接触电阻

本给出测量接线电阻和接触电阻的具体方法。     

万用表电阻档测量误差的分析

对万用表电阻挡的测量误差进行了定量分析 ,导出了误差的表达式 ,给出了不同的电阻档适合测量电阻的范围和减少测量误差的方法。     

RLC串联电路暂态过程临界阻尼电阻谐波分析

电感和电容上的交流损耗是引起RLC串联电路临界阻尼过程中临界电阻的实验测量值与理论值偏离的原因。将临界阻尼脉冲电流转换为周期脉冲序列,并展开为三角函数级数。分别以各次谐波电流作用RLC串联电路,测出电感和电容上的平均损耗电阻,以此对临界阻尼电阻的测量值进行修正,使得临界阻尼电阻修正后的测量值与理论值基本一致。     

用单臂电桥测量低值电阻

我们知道,在测量中值电阻(10～10~5Ω)时,通常不去考虑连接导线本身的电阻以及导线、元件与接线柱间的接触电阻对测量结果的影响。但是,当测量的对象为低值电阻(1～10~(-6)Ω)时,接线电阻和接触电阻(约为10~(-2)～10~(-3)Ω)的影响就不能再忽略了。     

伏安法测电阻的电阻辅助法研究

在伏安法测电阻中,由于所用电表不是理想电表,在测量中会带来误差.如果在测量过程中引进辅助电阻,借助于辅助电阻进行测量,这就可以在一定程度上减小误差.     

双电桥测收缩电阻

利用双电桥测量了导体间的收缩电阻，并对接触电阻进行了分析。     

利用锁定放大器测量低电阻和高电阻

利用锁定放大器能够测量湮没在噪声中的信号的特点,采用低频交流伏安法,在0.5Vrms和0.5mArms条件下,实现了对几十mΩ级低电阻和数百MΩ级高电阻的测量,测量误差在1%左右。     

在矩形样品中Rymaszewski公式的适用条件的分析

用有限元法计算了用Rymaszewski公式测量矩形样品薄层电阻时的理论误差与探针距及其游移度、探针离开边界距离的关系;找出了实际测量时理论误差小于3%可放置直线四探针的中央区宽度,并给予实验验证.同时对利用无限系列镜像理论证明得出小矩形样品的薄层电阻测量不受样品边界和探针游移的影响的新方案提出了异议. 关键词：     

微电阻测量

微电阻测量朱林彦（太原工业大学，０３００２４）在工程实践中，我们常需要测定某些高导电材料的电阻率．但由于实际情况的限制，有时试样做得很小，其电阻只有微欧数量级或更小．在一般实验室里，测量低电阻使用的双臂电桥最低只能测到１０－６欧姆，测量结果只有一位有...     

Comparative investigation of resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air

A comparative investigation of resistance and ability to trigger high voltage (HV) discharge for single filament (SF) and multiple filaments (MF) has been carried out. The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance, but this is not the case for the MF. The MF's resistance is much smaller than SF's. However, the MF shows a bit higher HV breakdown threshold than the SF. The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.     

Comparative investigation of the resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air

A comparative investigation of the resistance and ability to trigger high voltage(HV) discharge for a single filament(SF) and multiple filaments(MFs) has been carried out.The experimental results show that the trend of the breakdown threshold of the SF exactly follows that of its resistance,but this is not the case for the MF.The MF’s resistance is much smaller than the SF’s.However,the MF shows a slightly higher HV breakdown threshold than the SF.The underlying physics is that the measured resistance of the MF is collectively contributed by every filament in the MF while the HV breakdown threshold is determined by only one single discharging path.     

Surface modification of ultra-high molecular weight polyethylene (UHMWPE) by argon plasma

In this work, argon (Ar) plasma generated by microwave electron cyclotron resonance (MWECR) has been used to modify the UHMWPE in order to increase the wear resistance. The results showed that the wettability, anti-scratch and wear resistance of UHMWPE treated by the Ar plasma had been improved, comparing with native UHMWPE. The FTIR and XPS spectra indicated the improvement of wettability should come from the oxygen based functional groups generated on the surface of UHMWPE. The improvement of anti-scratch and wear resistance may come from the enhancement of crosslinking of UHMWPE by Ar plasma treatment.     

忆阻器单阻态下的记忆电容行为及多态特性

采用供体-受体类型的共聚物构建了Al/共聚物/ITO结构的有机记忆器件,并对其电流-电压(I-V)和电容-电压(C-V)特性进行了研究.结果表明:器件不仅表现出明显的记忆电阻特征,而且在单个电阻状态下还存在记忆电容行为,使器件呈现出两种电阻状态和与之对应的四种电容状态,具有电阻和电容的双参量记忆能力.在此基础上对器件的电容开关行为进行了电压幅值的调制,使器件出现了更多的电容状态,为多级存储的实现提供了一条有效途径.最后通过引入分子内部极化算符,建立了记忆电阻和记忆电容的关联性,给出了描述器件双参量多状态特征的矩阵模型.     

天然金刚石形成透明硼皮金刚石的研究

 本文采用离子注入法，对天然金刚石表面进行少量渗硼，形成透明硼皮金刚石。经NP-1型X光电子能谱仪（XPS）表面测试，证明注入硼后的金刚石表面硼原子和碳原子形成了结合键。又经热失重分析（TGA）表明，用B₂O₃和硼作离子源进行注入，均能使金刚石的抗氧化温度得到提高，但用硼注入得到的“硼皮”金刚石抗氧化性更好些。用四种不同能量进行注硼时，都能使金刚石的抗氧化性得到几乎相同程度的提高，与注入的深度无关。     

Temperature dependence of the stress transfer for thermal resistance polymer composites by X-ray diffraction

Temperature dependence of the stress transfer from the matrix resin to the incorporated fiber has been measured for poly(p-phenylene benzobisoxazole) (PBO) fiber/bismaleimide (BMI) resin composite by a novel X-ray diffraction method. At 120°C, stress transfer and tensile strength of the PBO/BMI composite are superior to that of the PBO/epoxy composite, due to the excellent thermal resistance and good mechanical property of BMI resins. The PBO/BMI composite possesses good adhesion and excellent mechanical properties at high temperature, which are suitable for thermal resistance applications.     

巨磁电阻效应及应用设计性物理实验的研究

测量巨磁电阻阻值与磁感应强度的关系,研究巨磁电阻效应特性,介绍巨磁电阻效应的物理原理、实验方法及应用,该近代物理学的研究成果,可作为大学物理实验教学内容.     

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.     

Effect of montmorillonite on abrasion resistance of SiO2-filled polybutadiene

The effect of organically modified montmorillonite (OMMT) and silane coupling agent on the abrasion resistance of SiO₂-filled butadiene rubber (BR) vulcanizates has been investigated. Various amounts of OMMT are added into SiO₂-filled BR vulcanizates. A silane coupling agent, bis-(3-triethoxysilyl propyl) tetrasulfide (Si69), is used to modify OMMT during the masterbatch preparation for evaluating the influence of surface treatment on the abrasion resistance. Incorporation of OMMT into BR results in deterioration of the abrasion resistance as compared to unfilled BR vulcanizate due to poor dispersion of OMMT and insufficient interfacial adhesion between OMMT and BR matrix. The use of Si69 improves dispersion of OMMT particles and rubber/OMMT adhesion, resulting in abrasion resistance enhancement of BR/OMMT vulcanizates. By using similar compounding conditions as those for BR/OMMT vulcanizate, nanodispersion of OMMT in BR/SiO₂/OMMT vulcanizate has been achieved as judged by the high viscosity of the SiO₂-filled BR compound. This improved dispersion leads to better abrasion resistance of the BR/SiO₂/OMMT than that of the BR/SiO₂ composite. Utilization of Si69 slightly affects the DIN volume loss of BR/SiO₂/OMMT vulcanizates and the abrasion pattern.     

ITO导电膜红外发射率理论研究

根据红外辐射理论和薄膜光学原理计算了高品质ITO(indium tin oxide)导电膜的红外发射 率,其理论曲线与实测曲线基本符合. 并得出方块电阻小于30Ω时,ITO膜在红外波段8—14μ m的平均红外发射率理论值小于0.1.实际制备方块电阻小于10Ω的ITO膜具有优良的红外隐身 性能. 讨论了高品质ITO膜具有低红外发射率的物理机理,并提出了低红外发射率临界方块电 阻值,这有利於理论研究和工艺制备红外隐身ITO膜. 关键词： 红外发射率 ITO薄膜 理论计算 方块电阻