Development of sheared and ultra-pure DNA thin films prepared by ultrasonication and purification

DNA solutions were prepared by ultrasonication and purification to compare the characteristics between DNA solutions different in size, purity, or both. Ultrasonication effectively minimized the size variation in native DNA, while purification enhanced the transparency of fabricated DNA thin film. Each DNA solution was used to fabricate water-soluble or organic-soluble thin film. According to the electrical measurement of DNA and CTMA-modified DNA thin films and the fluorescence measurement of PicoGreen-embedded DNA thin films, ultrasonication and purification affect the electrical characteristics and intercalating efficiency of DNA thin films. The electrical properties of the water-soluble thin film and the organic-dissolved thin film were predominantly affected by purification, but opposite tendencies were observed. The highest resistance was observed in water-soluble DNA thin film fabricated from ultra-pure DNA, whereas organic-soluble DNA thin film from ultra-pure DNA showed the lowest resistance. Ultrasonication showed a synergistic effect on PicoGreen-DNA insertion, whereas purification suppressed the fluorescence signal.     

Growth and characterization of ZnO-SDS hybrid thin films prepared by electrochemical self-assembly method

ZnO-SDS hybrid thin films were grown on ITO glass using the potentiostatic electrodeposition route from aqueous zinc nitrate solution containing surfactant sodium dodecyle sulfanate (SDS). The electrochemical process of the hybrid films was analyzed by comparing the cyclic voltammetric curve and current-time curve with those of pure ZnO film. Results showed that the addition of a small amount of SDS could decrease the deposition current density, and inhibit the growth of ZnO crystals significantly. The hybrid films electrodeposited at −0.9 V for 30 min exhibited smooth and platelet-like morphology, with the film thickness of about 110 nm. The well-defined ZnO-SDS lamellar structures could be clearly observed, with two interlayer spaces of 35.1 and 30.9 Å, respectively. Optical analysis showed that the hybrid films had good optical quality, and exhibited the fundamental absorption edge of ZnO at 380 nm.     

Processing parameters and transport properties of vacuum evaporated CdSe thin films

Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique on glass substrate. Films evaporated at substrate temperature equal 523 K are stoichiometric and homogeneous. Effect of various growth parameters like rate of deposition and substrate temperature on the electrical properties has been studied in details. Also, the annealed at 673 K under vacuum for 1 h films have been analyzed for resistivity and Hall effect.     

Modulation of physical properties of oxide thin films by multiple fields

Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed.Some of the key issues and prospects of this area of study are also addressed.Oxide thin films exhibit versatile physical properties such as magnetism,ferroelectricity,piezoelectricity,metal–insulator transition(MIT),multiferroicity,colossal magnetoresistivity,switchable resistivity.More importantly,the exhibited multifunctionality can be tuned by various external fields,which has enabled demonstration of novel electronic devices.     

Surface and electrical properties of organic-inorganic hybrid structure as gate insulator to organic thin film transistor

Carbon-based OTFT devices were fabricated using a plasma process for the gate electrode and gate insulators. A nanocrystalline carbon (nc-C) film was used as the gate electrode, and three different layers, cyclohexene, diamond-like carbon (DLC), and cyclohexene/DLC (hybrid insulator), were used as the gate insulator. The surface and electrical properties of the three different gate insulators on the nc-C gate electrode were investigated using the SPM method, and the leakage current density and dielectric constant of the metal-insulator-metal (MIM) structures with three different insulator layers were evaluated. The hybrid insulator layer had a very smooth surface, approximately 0.2 nm, a uniform surface without defects, and good adhesion between the layers. Overall, it is believed that the hybrid insulator lead to a decrease in the electrical leakage current and an improvement in the device performance.     

MoSi2薄膜电子性质的第一性原理研究

采用第一性原理计算方法, 研究了四方MoSi₂薄膜的电子性质. 计算结果表明, 各种厚度的薄膜都是金属性的, 并且随着厚度的增加, 其态密度与能带结构都逐渐趋近于MoSi₂块体的特性. 通过对MoSi₂薄膜磁性的分析, 发现三个原子层厚的薄膜具有磁性, 其原胞净磁矩为0.33 μ_B; 而当薄膜的厚度大于三个原子层时, 薄膜不具有磁性. 此外, 进一步对单侧加氢饱和以及双侧加氢饱和结构下三原子层MoSi₂薄膜的电子性质进行了研究, 发现单侧加氢饱和的三原子层MoSi₂薄膜具有磁性, 其原胞净磁矩为0.26 μ_B, 而双侧加氢饱和三原子层MoSi₂薄膜是非磁性的. 双侧未饱和与单侧加氢饱和的三原子层MoSi₂薄膜的自旋极化率分别为30%和33%. 这些研究结果表明, 三原子层厚的MoSi₂ 超薄薄膜在悬空或者生长于基底之上时具有金属磁性, 预示着它在纳米电子学和自旋电子学器件等方面都有潜在的应用前景.     

Tailoring the structural and magnetic properties of sol-gel derived Sm-Co nanogranular films

In this study, we investigated the microstructure, phase evolution and magnetic properties of nanogranular films of Sm-Co compounds processed by the sol-gel method. By controlling the compositional ratio of Sm:Co precursor concentration, nanogranular films consisting of three distinct hard magnetic phases namely, Sm₂Co₇, SmCo₅ and Sm₂Co₁₇ with coercivity values of 1.78, 2.94 and 2.12 kOe, respectively, were obtained through this technique.     

基底微缺陷对介质薄膜光学性能影响的理论研究

基于非均匀膜理论提出一种存在微缺陷的介质基底的折射率分层模型，将基底依次分为表面层、亚表面层和体材料层，其中表面层和亚面层分别等效为折射率服从统计分布的非均匀膜，将它们分别再次细分为N₁和N₂个子层，每一子层均视为均匀介质 膜.应用光学薄膜特征矩阵法对其进行理论分析，并对单层介质膜的光学性能进行数值计算. 研究结果表明：基底的表面和亚表面微缺陷改变了薄膜和基底的等效折射率，导致了准Brew ster角和组合反射率与理想情形的偏离.同时这些微缺陷也改变了光在薄膜和基底中的传播 特性，因此反射相移和相位差均偏离理想情形.在研究基底的微缺陷对多层介质膜光学性能 影响的分析和计算时，该模型同样适用. 关键词： 微缺陷 介质薄膜 非均匀膜 光学性能     

Effects of oxygen content on the microstructures and optical properties of thermochromic vanadium oxide thin films

Reactive direct current magnetron sputtering and in situ thermal oxidation were used to prepare vanadium oxide (VO _X ) thin films with different oxygen contents. X-ray diffraction, Fourier transform infrared spectroscopy and a field emission scanning electron microscope were employed to characterize the films. The optical properties of the VO _X films at room temperature and 90 °C were investigated by applying an spectroscopic ellipsometer with a three-layer model of BEMA/Brendel–Bormann oscillator/substrate. It was demonstrated that the vanadium–oxygen bonds were strengthened, the film thickness and roughness decreased, while the grain size increased with increasing oxygen content. The increase in oxygen content had the effect of decreasing the near-infrared reflectance and free-electron concentration of the film at 90°C due to the decrease in the amount of VO₂.     

球面元件表面AlF3薄膜的光学特性和微观结构表征

在模拟球面元件曲率半径的仿面形夹具上镀制了AlF3单层薄膜,并对不同口径位置上的薄膜进行了比较,以表征球面元件表面镀制薄膜的光学特性和微观结构。首先,采用紫外可见光分光光度计测量了不同口径位置上薄膜样品的透射和反射光谱,反演得出AlF3的折射率和消光系数。然后,使用原子力显微镜观察了样品的表面形貌和表面粗糙度。最后,使用X射线衍射仪对薄膜的内部结构进行了表征。实验结果表明：在球面不同位置镀制的AlF3单层薄膜样品的光学损耗随着所在位置口径的增大而增大。口径为280 mm处的消光系数是中心位置处消光系数的1.8倍,表面粗糙度是中心位置的17.7倍。因此,球面元件需要考虑由蒸汽入射角不同带来的光学损耗的差异。     

La2-xSrxCuO4单晶膜的热电势与电阻率

测量了高质量的单晶膜La2-xSrxCuO4(x=010,020,025)的电阻率和热电势.La19Sr01CuO4电阻率呈现S型行为,表明存在一个赝能隙,在赝能隙态可以用公式ρ=ρ0+βexp(-ΔT)很好地拟合.热电势的测量表明,在超导转变前样品的残余热电势值非常小,这是膜的高质量引起的,三个样品在200K以上都出现一个宽峰,对其进行了一些理论模型分析,并与电子型超导体热电势结果作了比较. 关键词： 薄膜 输运性质 热电势     

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.     

溶胶-凝胶法制备Li-N双掺p型ZnO薄膜的结构、光学和电学性能

采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜,经X射线衍射和扫描电镜图片分析,所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%,Li/N（摩尔比）为1∶1,700℃退火等优化条件下得到的最佳电学性能结果是：电阻率为0.34 Ω·cm,霍尔迁移率为16.43 cm²/V·s,载流子浓度为2.79×10¹⁹ cm^{-3关键词： Li-N双掺 p型ZnO薄膜 溶胶-凝胶 性能}     

Optical and electrical properties of thermally oxidized bismuth thin films

Bismuth trioxide (Bi₂O₃) thin films were prepared by dry thermal oxidation of metallic bismuth films deposited by vacuum evaporation. The oxidation process of Bi films consists of a heating from the room temperature to an oxidation temperature (T_o = 673 K), with a temperature rate of 8 K/min; an annealing for 1 h at oxidation temperature and, finally, a cooling to room temperature. The optical transmission and reflection spectra of the films were studied in spectral domains ranged between 300 nm and 1700 nm, for the transmission coefficient, and between 380 nm and 1050 nm for the reflection coefficient, respectively. The thin-film surface structures of the metal/oxide/metal type were used for the study of the static current-voltage (I-U) characteristics. The temperature of the substrate during bismuth deposition strongly influences both the optical and the electrical properties of the oxidized films. For lower values of intensity of electric field (ξ < 5 × 10⁴V/cm), I-U characteristics are ohmic.     

SiNx薄膜热物性参数实验测量与分析研究

采用一种新的实验测量方案，将金属加热单元与温度探测单元合二为一，间接获得了在半导体和微电子学MEMS领域内有重要用途的SiN_x薄膜的导热系数、发射率、比热容和热扩散系数，并对实验结果进行了不确定度分析，为微电子电路设计和掩模成型工艺等提供了可靠的热物性数据. 实验结果表明，薄膜的导热系数、发射率、热扩散系数远比相应体材质低，而且还与温度、厚度有关，尺寸效应显著，而比热容则与体材质相差不大. 关键词： 微尺度传热 热物性参数 x薄膜')" href="#">SiN_x薄膜 测量技术     

Structure and magnetic properties of Co-substituted NiZn ferrite thin films synthesized by the sol-gel process

Co-substituted NiZn ferrite thin films, Ni_0.5Zn_0.5Co_xFe_2−xO₄ (0≤x≤0.2), were synthesized by the sol-gel process. The structure and magnetic properties of Ni_0.5Zn_0.5Co_xFe_2−xO₄ ferrite thin films have been investigated. The diffraction peak shifted towards the lower angle and the lattice parameter increased with Co substitution. There is little influence of Co substitution on the microstructure of NiZn ferrite thin films. The saturation magnetization gradually increases with the increase in Co substitution when x≤0.10, and decreases when x>0.10. Meanwhile, the coercivity initially decreases with the increase in Co substitution when x≤0.10, and increases when x>0.10.     

Stress analysis, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

The residual stress instituted in Ni-Mn-Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni-Mn-Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 °C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm³ and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.     

金刚石薄膜电致发光现象的研究进展

阐明了金刚石薄膜电致发光研究的重要意义．综述了金刚石薄膜电致发光现象研究的进展情况，指出目前该方面研究中存在的问题，并提出了进一步提高金刚石薄膜蓝区电致发光强度的可能途径．     

A study on electrical and mechanical properties of hybrid-polymer thin films by a controlled TEOS bubbling ratio

Organic-inorganic hybrid-polymer thin films were deposited on silicon(1 0 0) substrates at room temperature by PECVD (plasma enhanced chemical vapor deposition). Ethylcyclohexane and TEOS (tetraethoxysilane) were utilized as organic and inorganic precursors with hydrogen gas for the ethylcyclohexane bubbler and argon gas for both the TEOS bubbler and as a carrier gas. To compare the electrical and the mechanical properties of the plasma polymerized thin films, we grew the hybrid-polymer thin films under conditions of various TEOS bubbling ratios. MTS nano-indenter was used to measure the hardness and Young's modulus and showed that these values increased as the TEOS bubbling ratio increased, with the highest hardness at 0.8 GPa in this experiment. An impedance analyzer was utilized for the measurements of I-V curves and capacitance, showing the lowest dielectric constant at approximately 1.83, with a leakage current density of 10⁻⁸ A/cm² at 1 MV/cm, respectively.