Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag2Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着...     

空穴掺杂铱氧化物Srn+1IrnO3n+1 (n=1,2)的角分辨光电子能谱研究

近年来, 与铜氧化物高温超导体具有类似电子结构的5d 轨道 Ruddlesden-Popper 类型铱氧化物由于体系中库伦排斥和自旋轨道耦合之间的合作效应被人们广泛探究. 其中, 金属绝缘体转变的关键影响因素是该方向的核心研究问题, 该结果对推进掺杂莫特绝缘体体系的研究具有重要作用. 因为铱氧化物与铜氧化物在单能带哈伯德模型的次 近 邻 跃 迁 项 具 有 不 同 符 号, 因 此 空 穴 掺 杂 铱 氧 化 物 类 比 电 子 掺 杂 铜 氧 化 物. 我 们 将 空 穴 掺 杂Ruddlesden-Popper 类型铱氧 化 物 系 统 依 据 几 种 不 同 的 掺 杂 元 素 进 行 分 类, 分 别 介 绍 其 角 分 辨 光 电 子 能 谱(ARPES) 探测到的电子结构, 对其中金属绝缘体转变类型进行了总结, 并对该领域中的未来研究方向做出了展望.     

S在Pt皮肤Pt3Ni(111)面吸附的第一性原理研究

采用基于密度泛函理论的第一性原理方法,计算并分析了S原子在 Pt皮肤Pt3Ni(111)面不同位置的吸附特性.结果表明：S原子在Pt皮肤Pt3Ni的fcc位吸附最强,吸附能为5. 49 eV;与S原子在纯净Pt(111)表面的吸附相比,S原子在Pt皮肤Pt3Ni表面相应吸附位置的吸附能变小、与近邻的Pt原子形成的S-Pt键变长,表明掺杂的Ni会减小相应位点S原子的吸附能,降低体系对S原子的吸附能力,进而减弱S吸附对体系催化能力的影响;态密度分析发现, S原子的吸附使得Pt基催化剂的催化活性降低,主要是S的2p电子引起的;这些结果将为后续研究Pt基合金电极抗S中毒效果以及探究S原子吸附后Pt3Ni的活性位提供依据.     

High-resolution angle-resolved photoemission study of Ni(1 1 1) surface state

High-resolution angle-resolved photoemission spectroscopy (ARPES) has been conducted to study the Shockley state (SS) in ferromagnetic Ni(1 1 1) located at the point of the surface Brillouin zone. We have determined the Fermi wave vector and Fermi energy of the state with excitation photon energies of hν = 6.9-27.5 eV. On the basis of ARPES spectral shape analyses, we have found significant electron-electron interaction in the SS.     

Adsorption and rotational barrier for a single azobenzene molecule on Au(111) surface

The orientation switching of a single azobenzene molecule on Au(111) surface excited by tunneling electrons and/or photons has been demonstrated in recent experiments. Here we investigate the rotation behavior of this molecular rotor by first-principles density functional theory(DFT) calculation. The anchor phenyl ring prefers adsorption on top of the fcc hollow site, simulated by a benzene molecule on close packed atomic surface. The adsorption energy for an azobenzene molecule on Au(111) surface is calculated to be about 1.76 e V. The rotational energy profile has been mapped with one of the phenyl rings pivots around the fcc hollow site, illustrating a potential barrier about 50 me V. The results are consistent with experimental observations and valuable for exploring a broad spectrum of molecules on this noble metal surface.     

Ni(111)表面一氧化碳和氢共吸附的密度泛函理论研究

本文用密度泛函理论(DFT)的总能计算研究了一氧化碳和氢原子在Ni(111)表面上p(2×2)共吸附系统的原子结构和电子态，结果表明CO和H原子分别被吸附于两个对角p(1×1)元胞的hcp和fcc位置.以氢分子和CO分子作为能量参考点，总吸附能为2.81 eV，相应的共吸附表面功函数φ为6.28 eV.计算得到的C—O，C—Ni和H—Ni的键长分别是1.19?, 1.96?和 1.71?，并且CO分子以C原子处于hcp的谷位与金属衬底原子结合.衬底Ni(111)的最外两层的晶面间距在吸附后的相对变化分别是 关键词： Fisher-Tropsch反应 催化作用 Ni(111) p(2×2)/(CO+H) 共吸附     

Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)

The electronic structure of thin films of the organic semiconductor copper tetraphenylporphyrin (CuTPP) has been studied using synchrotron radiation-excited resonant soft X-ray emission spectroscopy (RSXE), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and X-ray photoemission spectroscopy (XPS). The C and N partial density of states for both the valence and conduction band electronic structure has been determined, while XPS was used to provide information on the chemical composition and the oxidation states of the copper. Good agreement was found between the experimental measurements of the valence and conduction bands and the results of density functional theory calculations.     

Electronic structure of graphene on Ni(111) and Ni(100) surfaces

Physics of the Solid State - A comparative investigation of graphene prepared by cracking of propylene (C3H6) on nickel surfaces with different orientations, Ni(111) and Ni(100), has been carried...     

分子取向对CO在Pd(111)面吸附的影响

 用基于密度泛函理论广义梯度近似下的平面波赝势方法计算了在Pd(111)晶面两种不同CO分子取向的吸附结构。计算结果表明，CO分子碳端和氧端靠近Pd(111)面的吸附能分别为-1.75，-0.28 eV，碳端吸附的结构比氧端吸附能力强。因此，分子取向影响CO在Pd(111)面上的吸附，通过控制CO的取向可能减小Pd(111)的吸附进而减弱Pd(111)面CO分子的中毒。     

Electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film

Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices. For epitaxially grown graphene, the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface energies. Utilizing angle-resolved photoemission spectroscopy, here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film by chemical vapor deposition. With a relatively low growth temperature, graphene on Cu/Ni(111) exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111). The linear dispersions forming Dirac cone are as wide as 2 e V, with the Fermi velocity of approximately 1.1×10~6 m/s. Dirac cone opens a gap of approximately 152 meV at the binding energy of approximately 304 meV. Our findings would promote the study of engineering of graphene on different substrate materials.     

Effects of substrate defects on the carbon cluster formation in graphene growth on Ni(111) surface

The growth of graphene by chemical vapor deposition on transition metal has shown promise in this regard. The main hurdle for further improvement is the lack of complete understanding of the atomistic processes involved in the early growth stages, which is conceivable because there are too many factors affecting the growth process. Using first-principles calculations, we investigate the effect of substrate defects on the graphene nucleation on the Ni(111) surface. Our calculations reveal that the defects on substrates can induce the carbon aggregation, and the corresponding structures are completely different from that on the perfect Ni surface. We also compare the critical cluster sizes for the transition from one-dimensional carbon chains to two-dimensional graphene flakes in the growth sequence. Our investigations on the effects of substrate defects would be extremely useful for the future experimental synthesis of high-quality graphene.     

Fermi surface and band mapping of the cerium/palladium surface alloy

X-ray and UV excitation angle-resolved photoemission spectroscopy of ultra-thin films of cerium deposited on Pd(1 1 1) single-crystal surface has been carried out. Photoelectron diffraction pattern showed that deposition of 1 ML of Ce led to a formation of Ce-Pd substitutional alloy. Valence band spectra measured with high angular resolution permitted to plot valence band maps and Fermi surface scans and showed formation of surface alloy exhibiting d- and f-electron orbital hybridization. A shift of Pd 4d-derived states to higher binding energy in the Ce-Pd systems was observed.     

钴原子及其团簇在Rh(111)和Pd(111)表面的扫描隧道显微学研究

利用扫描隧道显微镜和扫描隧道谱(STM/STS)及单原子操纵,系统研究了单个钴原子(Co) 及其团簇在Rh (111)和Pd (111)两种表面的吸附和自旋电子输运性质. 发现单个Co原子在Rh (111)上有两种不同的稳定吸附位,分别对应于hcp和fcc空位, 他们的高度明显不同,在针尖的操纵下单个Co原子可以在两种吸附位之间相互转化. 在这两种吸附位的单个Co原子的STS谱的费米面附近都存在很显著的峰形结构, 经分析认为Rh (111)表面单个Co原子处于混价区,因此这一峰结构是d轨道共振 和近藤共振共同作用的结果.对于Rh (111)表面上的Co原子二聚体和三聚体, 其费米面附近没有观测到显著的峰,这可能是由于原子间磁交换相互作用 和原子间轨道杂化引起的体系态密度改变所共同导致.与Rh (111)表面不同, 在Pd (111)表面吸附的单个Co原子则表现出均一的高度.并且对于Pd (111)表面所有 单个Co原子及其二聚体和三聚体,在其STS谱的费米面附近均未探测到显著的电子结构, 表明Co原子吸附于Pd (111)表面具有与Rh (111)表面上不同的原子-衬底相互作用与自旋电子输运性质.     

O在Au(111)表面吸附的密度泛函理论研究

应用密度泛函理论，本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度，给出了覆盖度从0.11ML到1.0ML的范围内，O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位，O在fcc洞位的吸附能对覆盖度比较敏感，其值随着覆盖度的增加而减小；O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系，原因是Au表面电子向O偏移，形成表面偶极子；O—Au的相互作用形成成键态和反键态，且反键态都被占据，造成O—Au键很弱，O吸附能较小. 关键词： 表面吸附 Au(111)表面 密度泛函理论 电子特性     

Electronic surface states of Cu(1 1 0) surface

Surface states are a unique and important class of quantum states that shave an important effect on the electronic properties of Cu(1 1 0) surface. The Cu(1 1 0) surface has been studied using ultraviolet photoemission spectroscopy (PES), inverse photoemission spectroscopy (IPES), and reflection anisotropy spectroscopy (RAS), and shows a resonance in the RAS spectra at 2.1 eV due to a transition between occupied and unoccupied surface states. The unoccupied surface state involved in the RAS transition at an energy of 1.7 eV at the point of the surface Brillouin zone has been investigated using IPES and the occupied surface state is seen in PES spectra at 0.45 eV below the Fermi level. The energy difference of the surface states, 2.15 eV, is a good match to the transition energy found in the RAS experiments.     

Electronic structure of the Cu(111) surface

Self-consistent electronic structure calculations are reported on bulk Cu, and 3- and 5-layer Cu films. These yield a size insensitive work function, φ = 5.0±.1 eV, and a surface energy of 0.75 eV, in agreement with experiment. Good size convergence of the film potential permits the construction of a self-consistent potential for an 11-layer Cu(111) film, whose spectral properties we studied. A prominent p-like surface band was found within 0.1 eV of experiment, serving as a check on the surface potential.     

C_2H_x(x=4～6)在Ni(111)表面吸附的DFT研究

采用密度泛函理论与周期平板模型相结合的方法,对物种C_2H_x(x=4～6)在Ni(111)表面的top,fcc,hcp和bridge位的吸附模型进行了结构优化、能量计算,得到了各物种较有利的吸附位;并对最佳吸附位进行密立根电荷和总态密度分析.结果表明:C_2H_6和C_2H_4在Ni(111)表面的最稳定吸附位都是top位,吸附能分别是-36.41和-48.62 kJ·mol~(-1),物种与金属表面吸附较弱;而C_2H_5在Ni(111)表面的最稳定吸附位hcp的吸附能是-100.21 kJ·mol~(-1),物种与金属表面较强;三物种与金属表面之间都有电荷转移,属于化学吸附.     

用角分辨光电子能谱研究Co/Cu(111)外延超薄膜的电子结构

利用同步辐射角分辨光电子能谱研究了分子束外延生长的Co/Cu(111)超薄膜电子结构的变化.Cu(111)的位于表面布里渊区Γ点的表面态在覆盖度为两单层时仍然可以分辨,说明薄膜生长模式不是二维层状生长.在一单层和二单层时,动量沿Cu体布里渊区ΓΛL方向变化,Co的最明显的峰包有能量色散.在覆盖度从一单层到两单层的变化过程中,固定光子能量测谱发现Co的能带的能量调整.实验测得的Co膜的电子结构与已有理论计算的结果对比,初步确定Co原子在生长初期阶段为两层岛生长,而且在一单层时已经具有铁磁性.