Diode end-pumped passively Q-switched Nd:YAG ceramic laser with Cr4+:YAG saturable absorber

We report on a diode end-pumped passively Q-switched Nd:YAG ceramic laser. By using a Cr⁴⁺:YAG single crystal with an 80% initial transmission as the saturable absorber, stable Q-switched pulses with a 126-μJ pulse energy, a 12-ns pulse width, and an 8.4-kHz pulse repetition rate have been obtained. The Q-switching performance of the laser under different saturable absorption strengths and output couplings was experimentally investigated.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with V3+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a V³⁺:YAG saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO ₄ laser has been realized. The dependence of pulse width, pulse energy and peak power on the incident pump power at determinate pulse repetition rate are measured. Under the absorbed pump power of 8.59 W, the pulse temporal profile of the AO-switching with the pulse duration of 14.5 ns, the double Q-switching with pulse duration of 7.6 ns at 10 kHz, and the passive Q-switching with pulse duration of 22.3 ns are obtained. The pulse duration is obviously compressed in contrast to the purely actively AO Q-switched laser or the purely passively Q-switched laser with V³⁺:YAG.     

High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber

The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO₄ laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors.     

Optimization of passively Q-switched laser with V:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched laser with V³⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively Q-switched laser with V³⁺:YAG at 1342 nm are determined. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched pulse. The optimal calculations for a diode-pumped passively Q-switched a-Nd:GdVO₄ laser with V³⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Diode-pumped passively Q-switched and mode-locked Nd:YLF laser with Cr4+:YAG saturable absorber

A diode-pumped passively Q-switched Nd:YLF laser was demonstrated by using saturable absorber of Cr4+:YAG. At the incident power of 7.74 W, pure passively Q-switched laser with per pulse energy of 210 Μj and pulse width of 19.6 ns at repetition rate of 1.78 kHz was obtained by using Cr4+:YAG with initial transmission of 80%. At the incident power of 8.70 W, a Q-switched mode-locking with average output power of 650 Mw was achieved, the overall slop efficiency was 16%, corresponding to the initial transmission of 85% of Cr4+ :YAG.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with Cr4+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, for the first time, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The pulse duration is obviously compressed in contrast to the actively acoustic-optic Q-switched laser. By considering the Gaussian transversal distribution of the intracavity photon density and the longitudinal distribution of the photon density along the cavity axis as well as the influence of turnoff time of the acoustic-optic (AO) Q-switch, we provide the coupled rate equations for a diode-pumped doubly Q-switched Nd:GdVO₄ laser with both an acoustic-optic (AO) modulator and a Cr⁴⁺:YAG saturable absorber. These coupled rate equations are solved numerically, and the dependence of pulse width, pulse energy and peak power on the incident pump power at different pulse repetition rates is obtained. The numerical solutions of equations agree well with the experimental results.This revised version was published online in August 2005 with a corrected cover date.     

Diode-pumped passively Q-switched YAG/Yb:YAG laser with Cr4+:YAG as a saturable absorber

We design an efficient passively Q-switched laser using a composite YAG/Yb:YAG crystal as the laser gain medium and a Cr⁴⁺:YAG crystal as a saturable absorber. We obtain an average output power of 1.81 W in 1030 nm laser at an absorbed pump power of 4.8 W, corresponding to an optical-to-optical efficiency of 37.7% and a slope efficiency of 47.3%. The pulsed laser has a repetition rate of about 28.6 kHz and a pulse width of 15.8 ns, with the highest peak power of 4 kW. In addition, using a LBO as the intracavity frequency doubler, we obtain a maximum power of 246 mW in 515 nm pulsed laser at an absorbed pump power of 3.8 W.     

Diode-pumped Nd:YAG ceramic laser at 946 nm passively Q-switched with a Cr4+:YAG saturable absorber

We demonstrate a diode-pumped Nd:YAG ceramic laser with emission at 946 nm that is passively Q-switched by single-crystal Cr⁴⁺:YAG saturable absorber. An average output power of 1.7 W is measured under 18.4 W of incident power using an output mirror with transmission T=4%. The corresponding optical-to-optical efficiency is 9.2%. The laser runs at a pulse repetition rate of 120 kHz and delivers pulses with energy of 14 μJ and duration of 80 ns, which corresponds to a peak power of 175 W.     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

Two-dimensional tellurene nanosheets as saturable absorber of passively Q-switched Nd:YAG solid-state laser

For the first time,a group-Ⅵ single element nanomaterial was used as the optical saturable absorber(SA) to generate laser pulses.With two-dimensional(2D) tellurene as a passive Q-switch,1.06 μm and 1.3 μm pulse laser operations were realized from a diode-pumped Nd:YAG crystal.The shortest pulse widths were 98 ns and 178 ns,and the highest peak powers were 2.68 W and 2.45 W,respectively.Our research determines that tellurene is an excellent SA material in the near-infrared region.     

LD-end-pumped passively Q-switched Nd:YAG ceramic laser with single wall carbon nanotube saturable absorber

We report on a LD-end-pumped passively Q-switched Nd:YAG ceramic laser by using a novel single wall carbon nanotube saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric Arc discharge method on quartz substrate with absorption wavelength of 1064 nm. We firstly investigated the continuous wave (CW) laser performance and scattering properties of Nd:YAG ceramic sample. For the case of passively Q-switched operation, a maximum output power of 376 mW was obtained at an incident pump power of 8.68 W at 808 nm, corresponding to an optical–optical conversion efficiency of 4.3%. The repetition rate as the increase of pump power varied from 14 to 95 kHz. The minimum pulse duration of 1.2 μs and maximum pulse energy of 4.5 μJ was generated at a repetition rate of 31.8 kHz.     

Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

High-power passively Q-switched Nd:GdVO_4 laser with a reflective graphene oxide saturable absorber

A single output Q-switched Nd:GdVO4 laser with a reflective graphene oxide(GO) saturable absorber was demonstrated. The shortest pulse duration in the Q-switched laser is 115 ns, and the output power ranges from1.23 W at 1.71 MHz to 2.11 W at 2.50 MHz when the pump power rises from 7.40 to 10.90 W with the utilization of GO Langmuir–Blodgett(LB) films based on the convenient and low-cost LB technique. To the best of our knowledge, it is the highest output power in a Q-switched laser with a GO saturable absorber.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

A laser-diode end-pumped passively Q-switched intracavity doubling Nd:GdVO<Subscript>4</Subscript>/KTP red laser with V<Superscript>3+</Superscript>:YAG saturable absorber

Using a V³⁺:YAG saturable absorber, we realize the running of a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO₄/KTP red laser. Under the absorbed pump power of 9.45 W and with V³⁺:YAG initial transmission T ₀ = 94%, the obtained average output power and pulse width were 610 mW and 15.09 ns with the repetition rate of 12.2 kHz, corresponding to the single pulse energy 50 μJ and the pulse peak power 3.34 kW.     

Comparison between c-cut and a-cut Nd:YVO4 lasers passively Q-switched with a Cr4+:YAG saturable absorber

Comparison between c-cut and a-cut Nd:YVO₄ microchip lasers passively Q-switched with a Cr⁴⁺:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO₄ crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO₄ crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (>10 kW) lasers. Received:10December2001/Revisedversion:22January2002 / Published online: 14 March 2002     

Laser performance of Nd:LaB3O6 cleavage microchips passively Q-switched with a Cr4+:YAG saturable absorber

Passively Q-switched laser oscillation at 1060 nm from an unprocessed Nd:LaB₃O₆ cleavage microchip with a Cr⁴⁺:YAG saturable absorber has been demonstrated. The influence of absorbed pump power, output coupler transmission and cavity length on the output pulse characteristics has been investigated. For a plano-concave cavity with a cavity length of 28 mm, pulse with 100 mW average output power, 4.0 μJ energy, 17 ns duration, 25 kHz repetition rate, and 0.24 kW, peak power was obtained at the absorbed pump power of 1.42 W and output coupler transmission of 3.5%. For a plano-plano cavity with a cavity length of 5 mm, pulse with 85 mW average output power, 2.1 μJ energy, 2.3 ns duration, 40 kHz repetition rate, and 0.89 kW, peak power was obtained at the absorbed pump power of 1.42 W and output coupler transmission of 5.6%. Because a chopper with a 5% duty cycle was employed in the experiments to reduce the influence of pump-induced thermal loading, the above average output powers were obtained at the 5% duty cycle and extrapolated to 100%.PACS 42.55.Rz; 42.60.Gd; 42.70.Hj