阴极界面修饰层改善平面p-i-n型钙钛矿太阳能电池的光伏性能

有机/无机杂化金属卤化物钙钛矿半导体材料结合了有机材料良好的溶液可加工性以及无机材料优越的光电特性,近几年受到了热捧,成为太阳能电池领域一颗耀眼的明星. 伴随着钙钛矿薄膜结晶过程和形貌的优化、器件结构的改进以及电极界面材料的开发,这类有机/无机杂化金属卤化物钙钛矿太阳能电池的光电转换效率从最初的3.8%迅速提高到目前最高的22.1%. 其中界面工程在提升器件性能上发挥着极其重要的作用. 本文总结了平面p-i-n型钙钛矿太阳能电池中阴极界面修饰层（CBL）的研究进展. CBL从材料上讲可分为无机金属氧化物、金属或金属盐以及有机材料,从构成上讲可分为单层CBL、双层CBLs以及共混型CBL. 本文对这些类型的CBL分别给予详细的介绍. 最后,我们归纳出CBL在改善器件效率和稳定性上所起的作用以及理想CBL所应满足的要求,希望能为以后阴极界面修饰材料的设计提供一定的借鉴.     

用CdSe/ZnS量子点提高体异质结有机太阳电池的效率

通过掺杂吸收光谱在可见光波段的量子点可提高聚合物对可见光的吸收,因此掺杂CdSe/ZnS核-壳结构量子点(CQDs)能提高聚(3-己基噻吩):[6,6]-苯基-C61-丁酸甲酯(P3HT:PCBM)体异质结太阳电池的能量转换效率.本文研究了CdSe/ZnS量子点在P3HT:PCBM中的不同掺杂比例及其表面配体对太阳电池光伏性能的影响,优化器件ITO(氧化铟锡)/PEDOT:PSS(聚(3,4-乙撑二氧噻吩:聚苯乙烯磺酸)/P3HT:PCBM:(CdSe/ZnS)/Al的能量转换效率达到了3.99%,与相同条件下没有掺杂量子点的参考器件ITO/PEDOT:PSS/P3HT:PCBM/Al相比,其能量转换效率提高了45.1%.     

喷涂法制备大面积倒置聚合物光伏器件

采用喷涂工艺制备了结构为ITO/ZnO/P3HT∶PCBM/V2O5/Ag(P3HT:聚噻吩;PCBM:6,6-苯基-C61-丁酸甲酯)的大面积倒置光伏器件,有效面积为1.0×1.1 cm2。 光谱测试结果表明,退火处理后,P3HT∶PCBM薄膜吸收显著增强,并且产生一定程度的红移。 采用ZnO和V2O5代替LiF和PEDOT∶PSS(聚(3,4-乙撑二氧噻吩)∶聚苯乙烯磺酸盐)作为器件修饰层,避免了PEDOT∶PSS对ITO的腐蚀和LiF潮解,采用Ag代替Al作为金属背电极避免了Al被氧化。 经过后退火处理器件的效率从1.1%提升至1.65%。 器件的稳定性相对于传统结构有了大幅提升,8周后器件效率只衰减10%。     

Control over morphology of magnesium-aluminum hydrosilicate nanoscrolls

It is shown that the morphology of nanoparticles based on variable-composition compounds (Mg,Al)₃(Si,Al)₂O₅(OH)₄ can be controlled by varying the content of aluminum, x _Al. Nanoparticles with both tubular (x _Al = 0 mol %) and plate-like (x _Al = 5 mol %) morphologies were obtained by synthesis of nanoparticles under hydrothermal conditions at 350°C and 30 MPa in an aqueous solution of 0.5 M NaOH. A calculation analysis of the existence conditions of the tubular and plate-like forms of (Mg,Al)³(Si,Al)₂O₅(OH)₄ compounds was made. The tubular morphology can be potentially obtained in a wider range of xAl values than that observed in the experiment.     

Phase formation in the Ag<Subscript>2</Subscript>MoO<Subscript>4</Subscript>-MgMoO<Subscript>4</Subscript>-Al<Subscript>2</Subscript>(MoO<Subscript>4</Subscript>)<Subscript>3</Subscript> system

The subsolidus region of the Ag₂MoO₄-MgMoO₄-Al₂(MoO₄)₃ ternary salt system has been studied by X-ray phase analysis. The formation of new compounds Ag_{1 ? x} Mg_{1 ? x} Al_{1 + x} (MoO₄)₃ (0 ≤ x ≤ 0.4) and AgMg₃Al(MoO₄)₅ has been determined. The Ag_{1 ? x} Mg_{1 ? x} Al_{1 + x} (MoO₄)₃ variable-composition phase is related to the NASICON type structure (space group R \(\bar 3\) c). AgMg₃Al(MoO₄)₅ is isostructural to sodium magnesium indium molybdate of the same formula unit and crystallizes in triclinic system (space group P \(\bar 1\), Z = 2) with the following unit cell parameters: a = 9.295(7) Å, b = 17.619(2) Å, c = 6.8570(7) Å, α = 87.420(9)°, β = 101.109(9)°, γ = 91.847(9)°. The compounds Ag_{1 ? x} Mg_{1 ? x} Al_{1 + x} (MoO₄)₃ and AgMg₃Al(MoO₄)₅ are thermally stable up to 790 and 820°C, respectively.     

The Effect of Lithium Doping in Solution-Processed Nickel Oxide Films for Perovskite Solar Cells

The effect of substitutional Li doping into NiO_x hole transporting layer (HTL) for use in inverted perovskite solar cells was systematically studied. Li doped NiO_x thin films with preferential crystal growth along the (111) plane were deposited using a simple solution-based process. Mott-Schottky analysis showed that hole carrier concentration (N_A) is doubled by Li doping. Utilizing 4 % Li in NiO_x improved the power conversion efficiency (PCE) of solar devices from 9.0 % to 12.6 %. Photoluminescence quenching investigations demonstrate better hole capturing properties of Li:NiO_x compared to that of NiO_x, leading to higher current densities by Li doping. The electrical conductivity of NiO_x is improved by Li doping. Further improvements of the device were made by using an additional ZnO layer onto PCBM, to remove shunt paths, leading to a PCE of 14.2 % and a fill factor of 0.72.     

Side-chain fluorination on the pyrido[3,4-<Emphasis Type="Italic">b</Emphasis>]pyrazine unit towards efficient photovoltaic polymers

A series of new polymer donors (PT-PP, PT-2fPP and PT-4fPP) were synthesized based on alkylthiophene substituted benzodithiophene (BDT-T) and pyrido[3,4-b]pyrazine (PP) building blocks and the effects of fluorination on the polymer properties were explored. Photophysical properties, charge mobilities and morphologies of the three polymers have been intensively investigated. The results indicated that the introduction of the fluorine atom at meta-positions of phenyl substituted PP unit hardly affected their highest occupied molecular orbital (HOMO) level. More importantly, controlling the degree of side-chain fluorination in the polymers is crucial for optimizing the blend morphology. Three polymers showed different photovoltaic properties. The polymer solar cell (PSC) based on the single layer device structure of ITO/PEDOT:PSS/PT-4fPP:PC₇₁BM (1:1, w:w)/ZrAcac/Al demonstrates a high power conversion efficiency (PCE) of 7.61% under the illumination of AM 1.5G, 100 mW cm^?2, which is the highest value for PP-based PSCs.     

Structure modification and annealing effect of polymer bulk heterojunction solar cells based on polyfluorene derivatives

Three low bandgap polyfluorene copolymers containing a donor–acceptor–donor moiety have been synthesized via Suzuki and Stille polymerization reactions. Their bandgaps and molecular energy levels (highest occupied molecular orbital and lowest unoccupied molecular orbital) varied with different polymerization methods. The molecular weight of the copolymer increased significantly through copolymerizing with a monomer having a long alkyl side chain. In order to investigate their photovoltaic properties, polymer solar cell devices based on the copolymers were fabricated with a structure of indium tin oxide/poly(styrene sulfonic acid)‐doped poly(ethylene dioxythiophene)/copolymers:[6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM)/LiF/Al under the illumination of AM 1.5G, 100 mW/cm². We found that the annealing temperature had a profound effect on the power conversion efficiency (PCE) of the devices with a blend of poly[9,9‐didodecylfluorene‐alt‐(bis‐thienylene) benzothiadiazole] (PF12‐TBT) and PCBM. The PCE of the solar cell based on PF12‐TBT/PCBM (1:4) annealing at 70 °C for 20 min was 4.13% with an open‐circuit voltage (V_oc) of 1.02 V, fill factor of 55.9%, and a short‐circuit current (J_sc) of 7.24 mA/cm². © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

CdSe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>/CdS-cosensitized 3D TiO<Subscript>2</Subscript> hierarchical nanostructures for efficient energy conversion

Three-dimensional TiO₂ hierarchical nanostructures (3D-TiO₂-HNs) containing TiO₂ nanotrees and nest-like hollow spheres were synthesized and used as backbones for CdSe _x S_1?x quantum dot (QD) loading. These CdSe _x S_1?x QD-sensitized 3D-TiO₂-HNs were then used as photoelectrodes in the preparation of quantum-dot-sensitized solar cells. As revealed by TEM images, the highly porous 3D-TiO₂-HNs represent an excellent framework on which to deposit a large number of CdSe _x S_1?x QDs in order to form homogeneous and compact CdSe _x S_1?x -sensitized layers in photoelectrodes using a spin-assisted successive ionic layer adsorption and reaction method (spin-SILAR). Following careful adjustment of the molar ratio of Se^2? to S^2?, the number of spin-SILAR cycles, and the thickness of the CdS passivation layer used, the best-performing QDSC was shown to yield a short-circuit current density of 18.22 mA cm^?2, an open-circuit voltage of 0.520 V, a fill factor of 0.510, and a power conversion efficiency of 4.83%. This high performance is possible because the device is able to absorb a relatively broad range of wavelengths and because charge recombination is suppressed in the device.     

Chemical etching of Cd<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te solid solution single crystals with iodine solutions in methanol

Chemical etching of Cd_{1 ? x} Mn _x Te (0.04 < x < 0.5) solid solution (ss) single crystals in I₂ + CH₃OH etching mixtures was studied. Concentration and kinetic curves of etching rates were plotted. As the manganese concentration of the solid solution increases, the rates of their etching by iodine-methanol etchants increase, too. The etchant compositions and chemical-dynamic polishing protocols for Cd_{1 ? x} Mn _x Te single crystals were optimized.     

Kinetics of Na|CF<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> and Li|CF<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> systems

Properties of CF _x /Li and CF _x /Na cells were examined while using galvanostatic charging/discharging, electrochemical impedance spectroscopy and scanning electron microscopy (SEM). The capacity during the first cycle was as high as ca. 1000 mAh g^?1. Such an electrode is suitable for primary CF _x /Li and CF _x /Na batteries. SEM images of CF _x cathode showed that during discharging it was transformed into amorphous carbon and LiF or NaF crystals (of diameter of ca. 5–20 μm). These systems (C?+?LiF or C?+?NaF) cannot be reversibly converted back into CF _x /Li or CF _x /Na, respectively. Exchange current densities are between 10^?7 Acm^?2 and 10^?9 Acm^?2 when working with LiPF₆ and NaPF₆ electrolytes (1.12?×?10^?7 Acm^?2 and 6.82?×?10^?9 Acm^?2, respectively). Those values are low and indicate that the charge transfer process may be the rate-determining step. Activation energies for the charge transfer process were 57 and 72 kJ mol^?1 for CF _x /LiPF₆ and CF _x /NaPF₆ systems, respectively. Higher activation energy barrier for the CF/Na⁺?+?e^??→?C?+?NaF reaction results in lower observed exchange current density in comparison to the system with lithium ions.     

Carbon in boron carbide: The crystal structure of B<Subscript>11.4</Subscript>C<Subscript>3.6</Subscript>

A single crystal of boron carbide obtained from a self-propagating high-temperature synthesis (SHS) product was studied by X-ray crystallography: B_11.4C_3.6, a = 5.594(2) Å, c = 11.977(7) Å, V = 324.6(7) ų, space group R3m, Z = 3, ρ_calcd = 2.56 g/cm³, R = 0.048. The content of carbon in the single crystal was estimated at ～24 at % from analysis of the unit cell parameters, bond lengths, and the volume of B_{12 ? x} C _x icosahedra, which demonstrated the possibility of obtaining by SHS carbon-rich boron carbide crystals due to the substitution of carbon atoms for boron atoms in icosahedra. Comparison of the X-ray crystallographic data for single crystals of boron carbide with the results of quantum-chemical calculations (an ab initio method (the 3–21G basis set) with geometry optimization) showed that the C-B-C group in a crystal has a nonlinear structure.     

Alkali (alkaline-earth) metal,aluminum, and titanium complex orthophosphates: Synthesis and characterization

Phase formation in the A_{1 + x} Al _x Ti_{2 ? x} P₃O₁₂ (A = Li, Na, K, Rb, or Cs; 0 ≤ x ≤ 2.0) and B_{0.5(l + x)}Al _x Ti_{2 ? x} P₃O₁₂ (B = Mg, Ca, Sr, or Ba; 0 ≤ x ≤ 2.0) systems was studied using X-ray powder diffraction, electron probe microanalysis, and IR spectroscopy. The following double and triple orthophosphates were found to exist: A_{1 + x} Al _x Ti_{2 ? x} (PO₄)₃ with A = Li (0 ≤ x ≤ 0.3), Na (0 ≤ x ≤ 1.0), K (x = 0, 1.0, or 2.0), Rb (x = 0, 1.0, or 2.0), or Cs (0 ≤ x ≤ 1.0) and B_{0.5(l + x)}Al _x Ti_{2 ? x} (PO₄)₃ with B = Mg and Ba (x = 0), Ca and Sr (0 ≤ x ≤ 0.2). These orthophosphates crystallize in the structure types of kosnarite, langbeinite, cesium titanium arsenate, potassium aluminum phosphate, or rubidium aluminum phosphate. Their crystal parameters were calculated. For CsTi₂(PO₄)₃ (x = 0), Rietveld refinement was carried out: space group Ia \(\bar 3\) d, Z = 32, a = 19.909(5) Å, V = 7892(1) ų. This compound has a framework structure. The framework is built of TiO₆ octahedra and PO₄ tetrahedra; eight- and 12-coordinated Cs⁺ cations populate interstices.     

Designing a Perylene Diimide/Fullerene Hybrid as Effective Electron Transporting Material in Inverted Perovskite Solar Cells with Enhanced Efficiency and Stability

Electron transport materials (ETM) play an important role in the improvement of efficiency and stability for inverted perovskite solar cells (PSCs). This work reports an efficient ETM, named PDI‐C₆₀, by the combination of perylene diimide (PDI) and fullerene. Compared to the traditional PCBM, this strategy endows PDI‐C₆₀ with slightly shallower energy level and higher electron mobility. As a result, the device based on PDI‐C₆₀ as electron transport layer (ETL) achieves high power conversion efficiency (PCE) of 18.6 %, which is significantly higher than those of the control devices of PCBM (16.6 %) and PDI (13.8 %). The high PCE of the PDI‐C₆₀‐based device can be attributed to the more matching energy level with the perovskite, more efficient charge extraction, transport, and reduced recombination rate. To the best of our knowledge, the PCE of 18.6 % is the highest value in the PSCs using PDI derivatives as ETLs. Moreover, the device with PDI‐C₆₀ as ETL exhibits better device stability due to the stronger hydrophobic properties of PDI‐C₆₀. The strategy using the PDI/fullerene hybrid provides insights for future molecular design of the efficient ETM for the inverted PSCs.     

Volatile Perovskite Precursor Ink Enables Window Printing of Phase-Pure FAPbI3 Perovskite Solar Cells and Modules in Ambient Atmosphere

Despite the great success of perovskite photovoltaics in terms of device efficiency and stability using laboratory-scale spin-coating methods, the demand for high-throughput and cost-effective solutions remains unresolved and rarely reported because of the complicated nature of perovskite crystallization. In this work, we propose a stable precursor ink design strategy to control the solvent volatilization and perovskite crystallization to enable the wide speed window printing (0.3 to 18.0 m/min) of phase-pure FAPbI₃ perovskite solar cells (pero-SCs) in ambient atmosphere. The FAPbI₃ perovskite precursor ink uses volatile acetonitrile (ACN) as the main solvent with DMF and DMSO as coordination additives is beneficial to improve the ink stability, inhibit the coffee rings, and the complicated intermediate FAPbI₃ phases, delivering high-quality pin-hole free and phase-pure FAPbI₃ perovskite films with large-scale uniformity. Ultimately, small-area FAPbI₃ pero-SCs (0.062 cm²) and large-area modules (15.64 cm²) achieved remarkable efficiencies of 24.32 % and 21.90 %, respectively, whereas the PCE of the devices can be maintained at 23.76 % when the printing speed increases to 18.0 m/min. Specifically, the unencapsulated device exhibits superior operational stability with T₉₀>1350 h. This work represents a step towards the scalable, cost-effective manufacturing of perovskite photovoltaics with both high performance and high throughput.     

Isomorphic substitution of neodymium and gadolinium for calcium in synthetic hydroxovanadate

Isomorphic substitution of neodymium and gadolinium for calcium in synthetic hydroxovanadate Ca_{5 ? x} M _x (VO₄)₃(OH)_{1 ? x} O _x (M = Nd, Gd) is studied in the range 700–1000°C using X-ray powder diffraction, single-crystal X-ray diffraction (Rietveld technique), and IR spectroscopy. Single-phase solid solutions at 800°C are formed with x ≤ 0.35 for M(III) = Nd and x ≤ 0.3 for M(III) = Gd. With high x, the apatite solid solution coexists with Ca₃(VO₄)₂, Nd₂O₃, and X phases. With increasing x in the homogeneous region, the intensity of the bands of stretching vibrations and librations of OH groups decrease. Single-crystal X-ray diffraction shows that neodymium and gadolinium substitute for calcium in solid solutions mostly in Ca(2) positions.     

Formation of Nd<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Bi<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>FeO<Subscript>3</Subscript> Nanocrystals under Conditions of Glycine-Nitrate Synthesis

Nd_1–xBi_xFeO₃ nanocrystals with crystallite size 30?60 nm have been prepared under conditions of glycine–nitrate burning. Single-phase Nd_1–xBi_xFeO₃ nanocrystals are formed over the entire studied concentrations range if the glycine–nitrate synthesis is performed in excess of the oxidizer. Under these conditions, a continuous range of the Nd_1–xBi_xFeO₃ solid solutions (0 ≤ х ≤ 0.75) crystallized in the rhombic system (space group Pbnm) are formed without crystallization of the burning intermediates. The Nd_1–xBi_xFeO₃ solid solutions (х = 0.775, 0.8) crystallize in the rhombic system (space group Pbаm).     

Crystal structure of [Ir(NH<Subscript>3</Subscript>)<Subscript>5</Subscript>Cl]<Subscript>2</Subscript>[OsCl<Subscript>6</Subscript>]Cl<Subscript>2</Subscript>. Crystal-chemical analysis of the iridium-osmium system

The [Ir(NH₃)₅Cl]₂[OsCl₆]Cl₂ binary complex salt has been prepared, and its structure was investigated by single crystal X-ray diffraction. Crystal data: a = 11.1901(13) Å, b = 7.9138(13) Å, c = 13.4384(18) Å; β = 99.640(3)°, V = 1190.0(2), space group C2/m, Z = 2, FW = 1099.47, d _x = 3.068 g/cm³. Thermolysis products of [Ir(NH₃)₅Cl]₂[OsCl₆]Cl₂, [Ir(NH₃)₅Cl][OsBr₆], (NH₄)₂[OsCl₆]_x[IrCl₆]_1?x , and K₂[OsCl₆]_x[IrCl₆]_1?x were studied by X-ray phase analysis; the unit cell parameters were refined, and the dependence of volume per atom (V/Z) on the composition of the Ir Os_1?x solid solution has been plotted.     

Single-layer solar cell based on nanostructure of polyaniline on fluorine-doped tin oxide: a simple,low-cost and efficient FTO│n-PANI│Al cell

Nanostructure of polyaniline (n-PANI) is assembled to form a polymer solar cell on fluorine-doped tin oxide (FTO) and aluminum electrodes. The characterization and doping process of n-PANI are verified by ultraviolet–visible (UV–Vis) and Fourier transform infrared spectroscopies. The n-PANI conductivity is in the semiconductive range, and its contact resistance is determined by circular-TLM. The morphologies of n-PANI, FTO and n-PANI film deposited on FTO surface are investigated using atomic force microscopy, scanning electron microscope and transmission electron microscopy. The energy levels of HOMO and LUMO and band gap energy are obtained by cyclic voltammetry and UV–Vis spectroscopy. The similar results are found for band gap energy. The photovoltaic cell characteristics, i.e., open-circuit voltage (V_OC), short-circuit current density (J_SC), fill factor and power conversion efficiency (PCE or η), are evaluated by measuring the current density–voltage (J–V) under illumination condition and resistance measurements and are found to be 936 mV, 2.72 mA/cm², 0.377 and 1.6%, respectively, for FTO│n-PANI│Al structure. The mechanism of photoelectron conduction within the cell is studied by the electrochemical impedance spectroscopy. The results shows that not only FTO│n-PANI│Al cell is completely efficient (in comparison with other similar cells, PCE is relatively high), but also its fabrication is of low cost, simple, oxidation resistant and under the green condition.     

Alkoxy substituted benzodithiophene-alt-fluorobenzotriazole copolymer as donor in non-fullerene polymer solar cells

A new benzodithiophene(BDT)-alt-fluorobenzotriazole(FBTA) D-A copolymer J40 was designed and synthesized by introducing 2-octyldodecyloxy side chains on its BDT units, for expanding the family of the BDT- alt-FBTA-based copolymers and investigating the side chain effect on the photovoltaic performance of the polymer in non-fullerene polymer solar cells(PSCs).J40 exhibits complementary absorption spectra and matched electronic energy levels with the n-type organic semiconductor(n-OS)(3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-sindaceno[1,2-b:5,6-b′]dithiophene)(ITIC) acceptor, and was used as polymer donor in the non-fullerene PSCs with ITIC as acceptor. The power conversion efficiency(PCE) of the PSCs based on J40:ITIC(1:1, w/w) with thermal annealing at 120 °C for 10 min reached 6.48% with a higher open-circuit voltage(Voc) of 0.89 V. The high Voc of the PSCs is benefitted from the lower-lying highest occupied molecular orbital(HOMO) energy level of J40. Although the photovoltaic performance of the polymer J40 with alkoxy side chain is lower than that of J60 and J61 with alkylthio-thienyl conjugated side chains, the PCE of6.48% for the J40-based device is still a relatively higher photovoltaic efficiency in the non-fullerene PSCs reported so far. The results indicate that the family of the BDT-alt-FBTA-based D-A copolymers are high performance polymer donor materials for non-fullerene PSCs and the side chain engineering plays an important role in the design of high performance polymer donors in the non-fullerene PSCs.