Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices

The excitation-intensity dependence of photoluminescence from the tunable band gap in GaAs n-i-p-i superlattices has been studied as a function of laser frequency, and of thickness and doping concentration of the constituent layers of the superlattice. The results demonstrate that with increasing doping concentration the luminescence frequency may be tuned even over a wider range than previously reported. This increased tunability range and excitation-intensity dependence of the luminescence agrees with our theoretical expectations.     

Control of carrier lifetime in PbTe nipi-superlattices by external photoinjection

Photoexcitation of PbTe doping superlattices at different intensity levels can have a large influence on nonequilibrium carrier lifetime which in turn is determined both by PbTe bulk properties and details of the superlattice periodic potential. Such “tunability” in the recombination rate is examined theoretically in a model which considers details of carrier tunneling and thermal excitation in the superlattice as well as the role of Auger recombination as a decay channel at high densities. Good agreement is obtained with experimental studies of transient photoconductivity in which picosecond pulses from a Nd:YAG laser have been used to vary the effective lifetime from less than 2 nsec up to 10 usec. We also show how the presence of 300 K background radiation has an important influence on practical recombination rates.     

Observation of tunable room temperature photoluminescence in GaAs doping superlattices

We report the observation of tunable room temperature photoluminescence in GaAs doping superlattices with high doping concentrations. This result confirms a simple model for estimating whether tunable tunneling recombination will prevail over thermally activated vertical recombination for a given superlattice configuration and temperature. The luminescence efficiency is found to be high.     

UV-luminescence and thermostimulated processes in nonlinear crystals LiB3O5

The results of study on luminescence and recombination processes in the large LiB₃O₅ single crystals are reported. It was shown that the luminescence at 295 nm is excited by photons with energy exceeding the band gap energy, by an electron beam, and also in recombination processes. Four peaks of thermoluminescence at 130, 180, 240 and 330 K are revealed, their parameters are fixed, and the origin of the trapping and recombination centers are determined. The most acceptable models of recombination processes and the origin of the LiB₃O₅ luminescence are discussed.     

Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

From absorption, emission, luminescence excitation and electron spin orientation studies of undoped GaAs-A?_xGa_1?xAs superlattices we demonstrate the $\text{intrinsic}$ nature of the radiative recombination process. This is in direct contrast to recombination observed in similar purity thick GaAs material. Moreover, our results do not support a recent suggestion that enhanced LO phonon-electron coupling should occur in such superlattice structures.     

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

The effects of strain compensation are investigated by using twenty periods of highly strain-compensated InGaAs/InAlAs superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thicknesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfectness. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from excitonic recombination at lower temperatures to band-to-band recombination at higher temperatures, which should be considered in device applications.     

Diamond-like and graphite-like carbon states in short-period superlattices

The Raman and luminescence spectra are studied in superlattices consisting of carbon layers separated by thin SiC barrier layers. It is shown experimentally that, upon the avalanche annealing of an initially amorphous superlattice, the carbon layers can crystallize into either a diamond-like or graphite-like structure, depending on the geometrical parameters of the superlattice. A method is proposed for obtaining carbon films with a specified crystal modification within a unified technology.     

Observation of edge photoluminescence in the organic semiconductor polyaniline

The edge luminescence of polyaniline, an organic semiconductor, has been observed for the first time. The bands in the luminescence spectrum correlate in position with the known bands in the absorption spectrum. The experimental data are used to estimate the band gap of the polymer. The nature of the recombination processes is discussed.     

Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Ｓｉ分子束外延，在较高的生长温度于Ｓｉ（１００）衬底上制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱发光材料．发光样品的质量和特性通过卢瑟福背散射、Ｘ射线双晶衍射及光致发光评估．背散射实验中观察到应变超晶格的反常沟道效应；Ｘ射线分析表明材料的生长是共度的、无应力释放的，结晶完整性好．低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合．并讨论了生长温度对量于阱发光的影响．     

Picosecond luminescence studies of vertical transport in short-period superlattices

Photoluminescence studies with ps-time resolution are reported for three different types of GaAs-AlGaAs microstructures: (i) a short-period superlattice, (ii) a superlattice, where an enlarged well is introduced into the center, and, (iii) a superlattice, where this well is separated from the superlattice by enlarged barriers. Exciting the samples by a mode-locked Ar⁺ laser very high sensitivity is achieved by an electro-optical cross-correlation technique using a gain modulated Si avalanche photodiode as a detector. From the data obtained we are able to determine the relevant parameters of vertical transport and nonradiative recombination in the respective structures.     

Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

Visible light emission from Si/SiO2 superlattices in optical microcavities

Bright quantum confined luminescence due to band-to-band recombination can be obtained from Si/SiO₂ superlattices. Placing them in a one-dimensional optical microcavity results in a pronounced modulation of the photoluminescence (PL) intensity with emission wavelength, as a consequence of the standing wave set up between the substrate and top interfaces. For a Si substrate, absorption of light reduces the PL efficiency, but for an Al-coated glass substrate the PL intensity is twice that of a quartz substrate case. The addition of a broad-band high reflector to the superlattice surface results in enhanced narrow-band emission. These results show that a suitably designed planar microcavity can not only considerably increase the external efficiency of luminescence in Si/SiO₂ superlattices but can also be used to decrease the bandwidth and selectively tune the peak wavelength.     

Short-wavelenght luminescence and thermostimulated processes in single crystals of BeO

The results of a study of thermostimulated luminescence and recombination processes in pure and impure single crystals of BeO are reported. The origin of the trapping and recombination centers, their parameters (activation energies, frequency factors), the recombination schemes and the TL spectra were determined. It was shown that, in the BeO single crystals during electron and hole recombinations, the excitation of the intrinsic luminescence band at 4.9 eV proceeds and its characteristics inherit no properties from the recombination centers.     

Superconductivity of the Pb/Ag superlattice

Layered Pb/Ag thin films were produced by vacuum evaporation on cooled glass substrates. Measured x-ray diffraction spectra showed peaks characteristic of a superlattice. The superconducting energy gap and the transition temperature of the Pb/Ag superlattice were measured by tunneling experiments. BCS-reduced tunneling conductance revealed the dependence the phonon structure on the superlattice period value. It was also observed that the order of the crystal structure has an influence on the superconducting parameters.     

二维共价有机骨架中的直接激子和间接激子

本文利用基于GW方法和Bethe-Salpeter方程的第一性原理计算,研究了两种二维共价有机骨架材料(COF)的激发态性质. 单层COF是直接带隙材料,而体相COF呈现间接带隙. 根据直接激子计算的体相COF的光学带隙和吸收光谱与实验一致,而由位于导带底的光生电子和位于价带顶的空穴形成的间接激子能量的理论计算值远低于实验荧光光谱的测量值. 研究表明,可以排除间接带隙COF材料的发光由声子主导的可能性. 研究认为体相COF的发光可能源于缺陷处直接激子的复合. 体相COF的AA堆叠结构导致其带隙是间接的. 如果将堆叠方式由AA变成AB,体相COF将转变成直接带隙材料,它的发光效率可能会增强.     

Bandwidth enhancement for parametric amplifiers operated in chirped multi-beam mode

In this paper we discuss the bandwidth enhancement that can be achieved in multi-Joule optical parametric chirped pulse amplification (OPCPA) systems exploiting the tunability of parametric amplification. In particular, we consider a pair of single pass amplifiers based on potassium-dideuterium-phosphate (DKDP), pumped by the second harmonic of Nd:glass and tuned to amplify adjacent regions of the signal spectrum. We demonstrate that a bandwidth enhancement upto 50% is possible in two configurations; in the first case, one of the two amplifiers is operated near its non-collinear broadband limit; to allow for effective recombination and recompression of the outgoing signals this configuration requires filtering and phase manipulation of the spectral tail of the amplified pulses. In the second case, effective recombination can be achieved simply by spectral filtering: in this configuration, the optimization of the parameters of the amplifiers (pulse, crystal orientation, and crystal length) does not follow the recipes of non-collinear OPCPA.     

Manipulation of resonant tunneling by substrate-induced inhomogeneous energy band gaps in graphene with square superlattice potentials

We investigate the resonant transmission of Dirac electrons through inhomogeneous band gap graphene with square superlattice potentials by transfer matrix method. The effects of the incident angle of the electrons, Fermi energy and substrate-induced Dirac gaps on the transmission are considered. It is found that the Dirac gap of graphene adds another degree of freedom with respect to the incident angle, the Fermi energy and the parameters of periodic superlattice potentials (i.e., the number, width and height of the barriers) for the transmission. In particular, the inhomogeneous Dirac gap induced by staggered substrates can be used to manipulate the transmission. The properties of the conductance and Fano factor at the resonant peaks are found to be affected by the gaps significantly. The results may be helpful for the practical application of graphene-based electronic devices.     

Numerical parametric study of chiral effects and group delays in Ω element based terahertz metamaterial

In this work, we have systematically studied the impact of geometric parameters on chiral effects which occur in metamaterial made of Ω elements. The analysis of group delays and electric field enhancements indicate stronger interaction between the structure and right circularly polarized waves. Calculations of optical activity and circular dichroism for different values of geometric parameters, allow us to deduce that the thickness of the wire and the gap size have large influence on these effects. On the other hand, the radius of the wire affects mainly the resonant frequency position which enables frequency tunability. The results indicate that multi-functional design of this chiral metamaterial offers great flexibility for various devices: enantiomeric sensors, circular polarizers and light modulators.     

CdSe/CdS核/壳型纳米晶的光谱特性

以巯基乙酸为稳定剂制备了CdSe/CdS核／壳型纳米晶。用光吸收谱（Abs)、光致发光谱（PL）及光致发光激发谱（PLE）研究了CdS壳层对CdSe纳米晶电子结构，从而对其吸收和发光性能的影响。根据PL和PLE的结果以及带边激子精细结构的计算结果，我们用尺寸很小的纳米晶中所形成的基激缔合物解释了PL光谱与吸收边之间较大的Stokes位移。     

Strain-free polarization superlattice in silicon carbide: a theoretical investigation

A strain-free superlattice of inversion domains along the hexagonal axis of SiC is investigated by theoretical calculations. The induced polarization causes a zigzag shape in the band edges, leading to spatial separation of photoexcited carriers and to an effective band gap narrowing tunable over a wide range by the geometry and on a smaller scale by the intensity of the excitation. Calculations on the SiC surface indicate that preparation of such a superlattice might be possible in atomic layer epitaxy with properly chosen sources and temperatures.