Proton NMR relaxation in albumin solutions doped with Mn(II)

The aim of this study is to obtain further information about the source of proton relaxation in the Mn(II)-human serum albumin complex. For this purpose, proton relaxation rates in albumin solutions 1/T ₁ and 1/T ₂ were measured versus increasing amounts of manganese [Mn_t]. The fractions of manganese bound to albumin [Mn_b] and free manganese [Mn_f] were then determined from proton relaxation rate enhancement data. Paramagnetic contributions of bound manganese to the observed relaxation rates (1/T _1p^*)_b and (1/T _2p^*)_b were also determined. Finally, the (1/T _2p^*)_b/(1/T _1p^*)_b ratio was used in a derived equation to estimate an effective correlation time τ. Mean τ value of the complex was found to be in the order of 3 ns, while the hydration number of bound manganese q was estimated to be about 4. The 1/τ was found to be the sum of the inverse values of rotational correlation time 1/τ _r, mean residence time of water in hydration spheres of the complex 1/τ _m, and longitudinal electronic relaxation time of manganese 1/τ _s in the complex. In conclusion, the relaxation mechanism in albumin solutions containing Mn(II) can be interpreted through dipolar and scalar interactions modulated by τ _r, τ _m and τ _s. This analysis enables one to get reasonable figures for the τ _r and q of Mn(II) in albumin solution.     

Dielectric losses in statistical mixtures

The specific features of the dielectric spectra of statistical mixtures in the form of heterogeneous systems with spherical particles chaotically arranged in the space have been investigated. The distribution function of relaxation times f(τ) has been restored. It has been established that the relaxation times are continuously distributed within a wide interval [τ₁, τ₂]. Different methods for broadening the relaxation time distribution interval and approximating the relaxation time distribution function f(τ) have been analyzed. It has been demonstrated that f(τ) is a nonmonotonic function with two maxima at the boundaries and a minimum in the vicinity of the midpoint of the interval [τ₁, τ₂]. These features of the relaxation time distribution function are responsible for the large difference between the average relaxation frequencies of the permittivity and the dielectric loss (electrical conductivity).     

Magnetic relaxation in a three-dimensional ferromagnet with weak quenched random-exchange disorder

Isothermal remanent magnetization decay,M _r(t), and ‘in-field’ growth of zero-field-cooled magnetization,M _ZFC(t), with time have been measured over four decades in time at temperatures ranging from 0.25T _c to 1.25T _c (whereT _c is the Curie temperature, determined previously for the same sample from static critical phenomena measurements) for a nearly ordered intermetallic compound Ni₃Al, which is an experimental realization of a three-dimensional (d = 3) ferromagnet with weak quenched random-exchange disorder. None of the functional forms ofM _r(t) predicted by the existing phenomenological models of relaxation dynamics in spin systems with quenched randomness, but only the expressions and closely reproduce such data in the present case. The most striking features of magnetic relaxation in the system in question are as follows: Aging effects are absent in bothM _r t andM _ZFC(t) at all temperatures in the temperature range covered in the present experiments. A cross-over in equilibrium dynamics from the one, characteristic of a pured = 3 ferromagnet with complete atomic ordering and prevalent at temperatures away from T_c, to that, typical of ad = 3 random-exchange ferromagnet, occurs asT → T_c. The relaxation times τ₁(T)(τ₁ ^′(T)) and τ₂(T)(τ₂ ^′(T)) exhibit logarithmic divergence at critical temperatures and ; and both increase with the external magnetic field strength,H, such that at any given field value, . The exponent characterizing the logarithmic divergence in τ ₁ ^′ (T) and τ ₂ ^′ T possesses a field-independent value of ≃16 for both relaxation times. Of all the available theoretical models, the droplet fluctuation model alone provides a qualitative explanation for some aspects of the present magnetic relaxation data     

A Replica-Coupling Approach to Disordered Pinning Models

We consider a renewal process τ = {τ ₀, τ ₁,...} on the integers, where the law of τ _i − τ _i-1 has a power-like tail P(τ _i − τ _i-1 = n) = n ^−(α+1) L(n) with α ≥ 0 and L(·) slowly varying. We then assign a random, n-dependent reward/penalty to the occurrence of the event that the site n belongs to τ. In such generality this class of problems includes, among others, (1 + d)-dimensional models of pinning of directed polymers on a one-dimensional random defect, (1 + 1)-dimensional models of wetting of disordered substrates, and the Poland-Scheraga model of DNA denaturation. By varying the average of the reward, the system undergoes a transition from a localized phase, where τ occupies a finite fraction of to a delocalized phase, where the density of τ vanishes. In absence of disorder (i.e., if the reward is independent of n), the transition is of first order for α > 1 and of higher order for α < 1. Moreover, for α ranging from 1 to 0, the transition ranges from first to infinite order. Presence of even an arbitrarily small (but extensive) amount of disorder is known to modify the order of transition as soon as α > 1/2 [11]. In physical terms, disorder is relevant in this situation, in agreement with the heuristic Harris criterion. On the other hand, for 0 < α < 1/2 it has been proven recently by K. Alexander [2] that, if disorder is sufficiently weak, critical exponents are not modified by randomness: disorder is irrelevant. In this work, generalizing techniques which in the framework of spin glasses are known as replica coupling and interpolation, we give a new, simpler proof of the main results of [2]. Moreover, we (partially) justify a small-disorder expansion worked out in [9] for α < 1/2, showing that it provides a free energy upper bound which improves the annealed one.     

Anisotropic impurity scattering in palladium silver alloys

Measurements have been made of the Hall coefficientR of some alloys of silver in palladium over the temperature range 1°K to 120°K. The alloys contain between ∼1 and ∼10 at.-% silver. Values ofR were also obtained at room temperature and these were in good agreement with earlier published work. The values ofR are negative in all the alloys, and |R| increases both on reducing the temperature and increasing the silver concentration,c. Below ∼10°K, |R| becomes independent of temperature but shows a linear dependence onc, increasing by a factor of 2.5 over the concentration range measured. This increase is too great to be accounted for in terms of band structure changes alone, so we have examined the effects of anisotropic impurity scattering. To a first approximation it can be shown thatR is proportional to an anisotropy parameterA, defined asA=〈τ ²(k)〉/〈τ(k)〉², whereτ(k) represents the relaxation time of an electron in a statek, and 〈〉 is an average over the Fermi surface. In palladium we assume that the majority of the current is carried by the s-electrons. In the presence of silver impurities these electrons can be scattered into s-states or d-states with relaxation times given byτ _ss α1/c(1−c) andτ _sd α1/c ²(1−c) respectively. FollowingPlate we have assumed thatτ _ss is isotropic and thatτ _sd is anisotropic, leading to an overall anisotropic relaxation time for impurity scattering. We then find the parameterA increases approximately linearly with silver content, in accordance with our experimental results.     

On the investigation of magnetic critical phenomena in ferromagnets by μSR and PAC

On the basis of current theoretical views on the critical phenomena in isotropic Heisenberg ferromagnets the power temperature behavior Λ=c(τ)λ₀τ^-w has been derived for the muon spin relaxation rate Λ as π-T _c ⁻¹ (T-T _c ) → 0⁺. It is shown that the crossover from an exchange critical regime to a dipolar one is accompanied not only with the change in the critical exponentw in the above law, but also with the reduction of the coefficientc(π). A comparison with the temperature behaviour of the inverse nuclear relaxation timet _R ⁻¹ measured in the PAC experiment is carried out.     

Nuclear Spin-Lattice Relaxation of 82BrFe

The field dependence of the nuclear spin-lattice relaxation (SLR) of cold implanted ⁸²Br (T ≤ 25 mK) in α-Fe single crystals was investigated with nuclear magnetic resonance of oriented nuclei (NMR/ON) at low temperatures as experimental technique. The SLR at the lattice sites with the hyperfine fields found by earlier NMR/ON experiments was measured as a function of the applied external magnetic field B _ext parallel to the three principle axes [100], [110] and [111] of the iron single crystal. The data were evaluated with the full relaxation formalism in the single impurity limit and for comparison also with the often employed model of a single exponential function with an effective relaxation time T ₁′. With a phenomenological model the high field values of the relaxation rates r _{∞, [100]′} = 6.6(2) · 10⁻¹⁵ T²sK⁻¹, r _{∞, [110]} = 5.4(2) · 10⁻¹⁵ T²sK⁻¹ and r _{∞, [111]} = 5.2(1) · 10⁻¹⁵ T²sK⁻¹ were obtained.     

Defect entropies and enthalpies in BaF<Subscript>2</Subscript>

Various experimental techniques have revealed that the predominant intrinsic point defects in BaF₂ are anion Frenkel defects. Their formation, enthalpy and entropy, as well as the corresponding parameters for the fluorine vacancy and fluorine interstitial motion have been determined. In addition, low temperature dielectric relaxation measurements in BaF₂doped with uranium leads to the parameters τ₀, E in the Arrhenius relation τ = τ₀ exp(E/k _B T) for the relaxation time τ. For the relaxation peak associated with a single tetravalent uranium, the migration entropy deduced from the pre-exponential factor τ₀ is smaller than the anion Frenkel defect formation entropy by almost two orders of magnitude. We show that, despite their great variation, the defect entropies and enthalpies are interconnected through a model based on anharmonic properties of the bulk material which have been recently studied by employing density-functional theory and density-functional perturbation theory.     

Asymptotics of Determinants of Bessel Operators

 For aL ^∞ (ℝ₊)∩L ¹ (ℝ₊) the truncated Bessel operator B _τ (a) is the integral operator acting on L ² [0,τ] with the kernel

Effective nonlinear optical properties of shape distributed composite media

The effective linear and nonlinear optical properties of metal/dielectric composite media, in which ellipsoidal metal inclusions are distributed in shape, are investigated. The shape distribution function P(L _x, L _y) is assumed to be 2Δ^-2θ(L _x - 1/3 + Δ/3)θ(L _y - 1/3 + Δ/3)θ(2/3 + Δ/3 - L _x - L _y), where θ( ^{. . .} ) is the Heaviside function, Δ is the shape variance and L_i are the depolarization factors of the ellipsoidal inclusions along i-symmetric axes (i = x, y). Within the spectral representation, we adopt Maxwell-Garnett type approximation to study the effect of shape variance Δ on the effective nonlinear optical properties. Numerical results show that both the effective linear optical absorption α ∼ ωIm() and the modulus of the effective third-order optical nonlinearity enhancement |χ⁽³⁾ _e|/χ⁽³⁾ ₁ exhibit the nonmonotonic behavior with Δ. Moreover, with increasing Δ, the optical absorption and the nonlinearity enhancement bands become broad, accompanied with the decrease of their peaks. The adjustment of Δ from 0 to 1 allows us to examine the crossover behavior from no separation to large separation between optical absorption and nonlinearity enhancement peaks. As Δ → 0, i.e., the ellipsoidal shape deviates slightly from the spherical one, the dependence of |χ⁽³⁾ _e|/χ⁽³⁾ ₁ on Δ becomes strong first and then weak with increasing the imaginary part of inclusions' dielectric constant. In the dilute limit, the exact formula for the effective optical nonlinearity is derived, and the present approximation characterizes the exact results better than old mean field one does. Received 10 December 2002 Published online 4 June 2003 RID="a" ID="a"e-mail: lgaophys@pub.sz.jsinfo.net     

Lattice Dislocations in a 1-Dimensional Model

The spectral properties of the Schr?dinger operator T(t)=−d ²/dx ²+q(x,t) in L ²(ℝ) are studied, where the potential q is defined by q=p(x+t), x>0, and q=p(x), x<0; p is a 1-periodic potential and t∈ℝ is the dislocation parameter. For each t the absolutely continuous spectrum σ _ac (T(t))=σ _ac (T(0)) consists of intervals, which are separated by the gaps γ _n (T(t))=γ _n (T(0))=(α _n ⁻,α _n ⁺), n≥1. We prove: in each gap γ _n ≠?, n≥ 1 there exist two unique “states” (an eigenvalue and a resonance) λ _n ^±(t) of the dislocation operator, such that λ _n ^±(0)=α _n ^± and the point λ _n ^±(t) runs clockwise around the gap γ _n changing the energy sheet whenever it hits α _n ^±, making n/2 complete revolutions in unit time. On the first sheet λ _n ^±(t) is an eigenvalue and on the second sheet λ _n ^±(t) is a resonance. In general, these motions are not monotonic. There exists a unique state λ₀(t) in the basic gap γ₀(T(t))=γ₀(T(0))=(−∞ ,α₀ ⁺). The asymptotics of λ _n ^±(t) as n→∞ is determined. Received: 5 April 1999 / Accepted: 3 March 2000     

Reciprocity relations for the effective electrical conductivity of randomly inhomogeneous media in the fractal regime

An exact relation for the realization-averaged effective conductivities in the fractal region is found for two-dimensional randomly inhomogeneous media. It has the form {σ _e (τ,L)~× {1/σ _e (−τ,L)~⁻¹=σ _e ² (τ=0, L≫ξ), where ξ is the correlation length (the self-averaging scale), L is the size of the system, τ=(p-p _c )/p _c , and p _c is the percolation threshold. For L≫ ξ, the system is self-averaged, and the relation transforms into the Dykhne reciprocity relation, A. M. Dykhne, Zh. éksp. Teor. Fiz. 59, 110 (1970) [Sov. Phys. JETP 32, 63 (1971)] σ _e (τ)σ _e (−τ])=σ _e ² (τ=0)= σ ₁ σ ₂. A similar relation is obtained for media with an exponentially broad distribution of local conductivities, as well as for individual realizations of some deterministic structures. Zh. éksp. Teor. Fiz. 113, 1484–1490 (April 1998)     

On the Mixing Time of the 2D Stochastic Ising Model with “Plus” Boundary Conditions at Low Temperature

We consider the Glauber dynamics for the 2D Ising model in a box of side L, at inverse temperature β and random boundary conditions τ whose distribution P either stochastically dominates the extremal plus phase (hence the quotation marks in the title) or is stochastically dominated by the extremal minus phase. A particular case is when P is concentrated on the homogeneous configuration identically equal to +  (equal to ?). For β large enough we show that for any ${\varepsilon >0 }We consider the Glauber dynamics for the 2D Ising model in a box of side L, at inverse temperature β and random boundary conditions τ whose distribution P either stochastically dominates the extremal plus phase (hence the quotation marks in the title) or is stochastically dominated by the extremal minus phase. A particular case is when P is concentrated on the homogeneous configuration identically equal to +  (equal to −). For β large enough we show that for any ${\varepsilon >0 }${\varepsilon >0 } there exists c=c(b,e){c=c(\beta,\varepsilon)} such that the corresponding mixing time T _mix satisfies lim_L?￥ P(T_mix 3 exp(cL^e)) = 0{{\rm lim}_{L\to\infty}\,{\bf P}\left(T_{\rm mix}\ge {\rm exp}({cL^\varepsilon})\right) =0}. In the non-random case τ ≡ +  (or τ ≡ −), this implies that T_mix ￡ exp(cL^e){T_{\rm mix}\le {\rm exp}({cL^\varepsilon})}. The same bound holds when the boundary conditions are all +  on three sides and all − on the remaining one. The result, although still very far from the expected Lifshitz behavior T _mix = O(L ²), considerably improves upon the previous known estimates of the form T_mix ￡ exp(c L^{\frac 12 + e}){T_{\rm mix}\le {\rm exp}({c L^{\frac 12 + \varepsilon}})}. The techniques are based on induction over length scales, combined with a judicious use of the so-called “censoring inequality” of Y. Peres and P. Winkler, which in a sense allows us to guide the dynamics to its equilibrium measure.     

The determination of <Emphasis Type="Italic">α</Emphasis><Subscript><Emphasis Type="Italic">S</Emphasis></Subscript> from <Emphasis Type="Italic">τ</Emphasis> decays revisited

We revisit the determination of α _S (m _τ ²) using a fit to inclusive τ hadronic spectral moments in light of (1) the recent calculation of the fourth-order perturbative coefficient K ₄ in the expansion of the Adler function, (2) new precision measurements from BABAR of e⁺e⁻ annihilation cross sections, which decrease the uncertainty in the separation of vector and axial-vector spectral functions, and (3) improved results from BABAR and Belle on τ branching fractions involving kaons. We estimate that the fourth-order perturbative prediction reduces the theoretical uncertainty, introduced by the truncation of the series, by 20% with respect to earlier determinations. We discuss to some detail the perturbative prediction of two different methods: fixed-order perturbation theory (FOPT) and contour-improved perturbative theory (CIPT). The corresponding theoretical uncertainties are studied at the τ and Z mass scales. The CIPT method is found to be more stable with respect to the missing higher order contributions and to renormalization scale variations. It is also shown that FOPT suffers from convergence problems along the complex integration contour. Nonperturbative contributions extracted from the most inclusive fit are small, in agreement with earlier determinations. Systematic effects from quark-hadron duality violation are estimated with simple models and found to be within the quoted systematic errors. The fit based on CIPT gives α _S (m _τ ²)=0.344±0.005±0.007, where the first error is experimental and the second theoretical. After evolution to M _Z we obtain α _S (M _Z ²)=0.1212±0.0005±0.0008±0.0005, where the errors are respectively experimental, theoretical and due to the evolution. The result is in agreement with the corresponding N³LO value derived from essentially the Z width in the global electroweak fit. The α _S (M _Z ²) determination from τ decays is the most precise one to date.     

Relaxation of post-illumination electric fields in strongly biased high-resistance structures with a single deep impurity level

This paper examines how an electric field relaxes when a discontinuous large carrier-depleting voltage applied to high-resistance symmetric metal-semiconductor-metal (MSM) and metal-insulator-semiconductor-insulator-metal (MISIM) structures having a single impurity level, and how its energy level ɛ _t=E _c−E _t and the tunneling transparency T _n,p of the metal-semiconductor or metal-insulator boundary affect the relaxation. It is shown that the relaxation of the field and the form of its steady-state distribution depend on the ratio of the time constant t _p in the majority-carrier (hole) region to the ionization time τ _t ⁻¹ =α _n (n _*+n ₁)+α _p (p _*+p ₁) of a deep trap in the bulk. This ratio determines the relative contributions of free ρ _p,n and bound charge dnsities ρ _t (where α _n,p is the coefficient for capture by an impurity, and p _*, n _*, p ₁, n ₁ are equilibrium concentrations and Shockley-Read constants in the bulk). For τ _t ≈(τ _t )_max≫t _p ,ρ _t ≫ it is found that ρ _p,n and ρ _t ≫ρ _p,n , which corresponds to a trap energy close to , independent of the value of T _n,p , decaying oscillations arise in the concentration distribution, bulk charge, and field appear in the bulk. The amplitude of these oscillations reaches a maximum at time t≈0.4τ _t. Decreasing the ratio α _p/α_n causes τ _t to deviate from (τ _t)_max. When this happens, the field no longer oscillates; instead, it increases with positive curvature in the cathode portion of the bulk. The quantity T _n,p determines the behavior of the field in the neighborhood of the anode. The value of (dE/dx)₀ is positive for MSM structures (T _n,p ≈1), and negative for MISIM structures (T _n,p ≈0). For transparencies close to a critical value T _n,p ⁰ , the field in the structure remains almost uniform over an impurity ionization time. Fiz. Tverd. Tela (St. Petersburg) 39, 1775–1782 (October 1997)     

Rapid solidification of Al-Cu-Ag ternary alloy under the free fall condition

The rapid solidification of Al-30%Cu-18%Ag ternary alloy is investigated by using the free fall method. Its solidified microstructure is composed of θ(Al₂Cu), α(Al) and ξ(Ag₂Al) phases. The liquidus temperature and solidus temperature are determined as 778 and 827 K, respectively. The alloy melt undercooled amounts up to ΔT _Max=171 K (0.20T _L). Its microstructural evolution is investigated based on the theoretical analysis of undercooling behavior and nucleation mechanics. It is found that the undercooling increases with the decrease of the diameter of the alloy droplet. When ΔT<78 K, the primary θ(Al₂Cu) phase of the alloy grows into coarse dendrite. When 78 K⩽ΔT⩽171 K, its refined θ(Al₂Cu) phase grows alternatively with α(Al) phase. Once ΔT⩾171 K, its microstructure is characterized by the anomalous (θ+α+ξ) ternary eutectic. Supported by the National Natural Science Foundation of China (Grant Nos. 50121101 and 50395105)     

Numerical study of Fermi-Pasta-Ulam recurrence for water waves over finite depth

Highly accurate direct numerical simulations have been performed for two-dimensional free-surface potential flows of an ideal incompressible fluid over a constant depth h, in the gravity field g. In each numerical experiment, at t = 0 the free surface profile was in the form y = A ₀cos(2πx/L), and the velocity field v = 0. The computations demonstrate the phenomenon of Fermi-Pasta-Ulam (FPU) recurrence takes place in such systems for moderate initial wave amplitudes A ₀ ≲ 0.12h and spatial periods at least L ≲ 120h. The time of recurrence T _FPU is well fitted by the formula T _FPU(g/h)^1/2 ≈ 0.16(L/h)²(h/A ₀)^1/2.     

Glass transition and dynamics of single and stacked thin films of poly(2-chlorostyrene)

The glass transition temperature and the dynamics of the α-process have been investigated using dielectric relaxation spectroscopy for single and stacked thin films of poly(2-chlorostyrene) (P2CS). The stacked film consists of 10 layers of single thin films with thickness of 12 nm or 18 nm. The glass transition temperature T _g of the single thin films of P2CS is found to decrease with decreasing film thickness in a similar way as observed for polystyrene thin films. The magnitude of the depression of T _g for the stacked thin films is larger than that of the single thin films with corresponding thickness. The depression of the temperature at which the dielectric loss shows a peak due to the α-process at a given frequency, T _α, is larger than that of the single thin films, although the magnitude is smaller than that of T _g . Annealing at a high temperature could cause the T _g and T _α of the stacked thin films to approach the values of the bulk system.     

The Variational Principle for a Class of Asymptotically Abelian C*-Algebras

Let (A,α) be a C^*-dynamical system. We introduce the notion of pressure P _α(H) of the automorphism α at a self-adjoint operator H∈A. Then we consider the class of AF-systems satisfying the following condition: there exists a dense α-invariant *-subalgebra ? of A such that for all pairs a,b∈? the C^*-algebra they generate is finite dimensional, and there is p=p(a,b)∈ℕ such that [α ^j (a),b]= 0 for |j|≥p. For systems in this class we prove the variational principle, i.e. show that P _α(H) is the supremum of the quantities h _φ(α) −φ(H), where h _φ(α) is the Connes–Narnhofer–Thirring dynamical entropy of α with respect to the α-invariant state φ. If H∈A, and P _α(H) is finite, we show that any state on which the supremum is attained is a KMS-state with respect to a one-parameter automorphism group naturally associated with H. In particular, Voiculescu's topological entropy is equal to the supremum of h _φ(α), and any state of finite maximal entropy is a trace. Received: 19 April 2000 / Accepted: 14 June 2000