薄膜后栅型SnO_2场发射显示器的制备及性能研究

利用光刻、阳极氧化和剥离技术在玻璃基底制备薄膜后栅型场发射阵列,采用丝网印刷技术将一维SnO2纳米发射材料转移至后栅结构的阴极电极上,借助光学显微镜和扫描电镜观测薄膜后栅型场发射阴极阵列,利用ANSYS软件模拟了不同条件下阴极电极附近电子运动轨迹.结果表明,一维SnO2纳米线在阴极电极衬底上分布均匀,电子束斑随着阳压的...     

用人工神经网络预测场发射开启电场

１　引言由于金刚石薄膜具有高硬度、高熔点、热导率大、化学稳定性好、负电子亲合势等特别优异的性质,对其场发射特性的研究引起了人们极大的关注,目前,关于金刚石薄膜场发射特性的研究已有很多报道,金刚石薄膜不仅具有极低的场发射开启电场,而且,具有很高的场发射电流密度,因而被认为是最理想的场发射冷阴极材料,近年来成为真空微电子学领域的研究热点,并已成功地应用于场发射平板显示器．在薄膜场发射的应用中往往?.. 关键词：     

TCTA在外电场下的双分子发光现象

制备了三苯胺化合物4,4′,4″-三(咔唑-9-基)三苯胺(TCTA)的单层器件ITO/MoO₃/TCTA/LiF/Al和TCTA/TPBi双层异质结器件ITO/NPB/TCTA/TPBi/Bphen/LiF/Al,研究了TCTA的双分子发光现象。通过测试器件的光电性能和薄膜的稳态光谱,得出以下结论:(1)单层器件的电致发光光谱有425 nm和600 nm两个发光峰。与TCTA薄膜的光致发光光谱对比,可知425 nm附近的蓝色发光峰来源于TCTA单体发光,而600 nm附近的橙色发光应为TCTA二聚体electromer的发光。蓝色和橙色发光混合,使单层器件发光颜色表现为白色,对应色坐标为(0.381,0.343)。(2)TCTA/TPBi双层异质结器件的电致发光光谱为440 nm的单峰,器件的最大发光亮度为930 cd/m²,发光性能明显优于单层器件。结合薄膜TCTA、TPBi和TCTA/TPBi的光致发光光谱和紫外-可见光吸收光谱,可知双层器件的发光来自TCTA⁺TPBi^-电致激基复合物。双层器...     

Displacement of Field Emitters by Vacuum Discharges

The location of field emitting micro-points, produced by nanosecond discharges in UHV, has been investigated by field emission microscopy. Weak discharges (duration < 5 ns, current < 10 A) caused a displacement of the field emission over the cathode by a distance that corresponds to average crater diameters (4–6 μm). Thus new emitters are produced at the boundary of discharge craters. More intense discharges show sometimes a far higher displacement. This can be explained by the formation of micro-points by splashes of molten metal that fly out of the discharge craters. The results support the model of the development of micro-points, as it was published in [1]. They show furthermore that the motion of arc cathode spots can be related to the displacement of microscopic field emitters.     

场发射显示Ag膜电极的制备及其电性能

场发射显示(FED)被认为是CRT的平板化,受到人们关注。作者采用直流磁控溅射法,在Al₂O₃过渡层上制备面心立方结构的Ag多晶薄膜。通过XRD、SEM、AFM测试分析发现,溅射功率分为两个区域,在溅射功率不高于2.8 kW时,沉积速率随着功率线性增大,得到Ag膜晶粒尺寸均一,薄膜电阻率逐步降低;溅射功率高于2.8 kW后,沉积速率没有显著增大,出现较多的大晶粒,电阻率升高,并且从理论上给出了解释。综合来看,溅射功率在2.8 kW所制备的Ag膜微观结构质量达到最佳,电阻率也达到最小值。     

Photo-Detached Electron Flux Distribution in a Gradient Electric Field

This paper investigates the flux distributions of the electron photo-detached from H-ion localized in a gradient electric field. In contrast with the photodetachment in the uniform electric field [Phys. Rev. A 40(1989) 4983],where only two electron trajectories interfere at each given point on a detector, for the photodetachment in a gradient electric field, the electrons waves can travel along multiple paths from the negative ion to a given point on the detector plane, which makes the electron flux distributions on the detector plane become much complex. Using the semi-classical theory, we put forward a formula for calculating the electron flux. Our calculation results suggest that the electron flux distributions on a given detector plane is not only related to the propagation time of the detached electron, but also related to the detached electron's energy. With the increase of the detached electron's energy, the oscillating region in the electron flux distributions becomes enlarged and the oscillating structure in the flux distributions becomes much more complicated. This study will guide future experiment research on the photodetachment microscopy of the negative ions in the presence of non-uniform external fields.     

Electric Field-Induced Fluid Velocity Field Distribution in DNA Solution

We present an analytical solution for fluid velocity field distribution of polyelectrolyte DNA. Both the electric field force and the viscous force in the DNA solution are considered under a suitable boundary condition. The solution of electric potential is analytically obtained by using the linearized Poisson-Boltzmann equation. The fluid velocity along the electric field is dependent on the cylindrical radius and concentration. It is shown that the electric field-induced fluid velocity will be increased with the increasing cylindrical radius, whose distribution also varies with the concentration     

GEM电极的三维电场分布计算

基于有限元方法对GEM电极的电场分布进行模拟和计算,得到了完整的三维电场分布.研究不同几何构型的GEM场强分布对电荷收集效率的影响,给出了4种构型GEM电极的电场线透过率分别为:双倒锥型33.12%;圆柱型34.85%;单锥型40.70%;单倒锥型16.70%.计算得到的电场线透过率比二维电场分布的结果更加接近实验结果     

一维光子晶体中金属层内的电场分布增强

利用传输矩阵方法,研究了一维电介质-金属光子晶体的光学传输特性和金属层内的电场分布情况。计算结果表明,通过引入增透膜和优化结构参数,可以明显改变电介质-金属光子晶体的光学性能：在19%透射率的情况下,金属层内的平均电场相对于入射光场可以达到77%;而在金属层内平均电场相对入射光场为28%的情况下,可得到72%的透射率。这种可显著增强金属层内电场分布并且透射率、金属层内场强可调的光子晶体结构有望在非线性光子器件中得到重要应用。     

Influence of the Wavefunction Distribution on Exciton Dissociation in Electric Field

We show that the dissociation threshold of an exciton, a bound electron-hole pair, by an electric field is mainly determined by its energy: as expected, the dissociation voltage decreases with increasing exciton energy. However, within the multiplet of states belonging to a particular principal quantum number n, the dissociation voltage rises with increasing state energy, in contrast to the expectations based on energy arguments. This behavior is demonstrated for the yellow exciton states of Cu₂O and is attributed to the distribution of the wavefunction in the potential landscape, where the lower (higher) lying state in the multiplet is shifted away (towards) the tunnel barrier.     

表面微结构辐射器几何结构对发射性能的影响

放射性同位素热光伏系统(RTPV)中表面微结构辐射器几何尺寸是决定其发射性能和系统效率的关键因素之一。本文通过对单个钨微腔宽度、高度以及壁厚对辐射器发射性能影响的探讨,初步得出了其红外辐射出射特点的产生原因,并利用时域有限差分算法(FDTD)对不同几何尺寸微腔的发射性能进行了对比。最后结合GaSb量子效率曲线,发现当微腔高度、宽度与壁厚分别为0.8,1.8,0.1μm时,其发射性能与GaSb匹配程度较好。     

Multilayer Field Emitters Made of Contacting Hafnium and Platinum Nanolayers

Technical Physics - Novel field emitters made of contacting hafnium and platinum layers have been studied. Calculations aimed at optimizing the characteristics of the multilayer emitters have been...     

Thermal Emission Spectra of two New Diatomic Emitters - CrS and MnS

Band spectra of two hitherto unknown diatomic emitters - CrS and MnS have been observed in thermal emission using a vacuum graphite furnace. While the spectrum attributed to CrS lies in the spectral region λλ3860 - 4650, MnS bands fall in the region λλ4200 - 5900. Vibrational analyses of the bands observed in both the cases give spectroscopic constants which tally nicely with the mass-spectrometric data.     

空间电推进技术发展及应用展望

我国空间电推进技术已进入成熟和全面应用的新阶段。为进一步促进电推进技术发展,加速推动空间动力领域技术进步,采用调研、对比分析的方法,以功率为划分标准,重点结合未来空间任务对电推进的应用需求,针对电推进各技术方向的特点,从“中、微、超”3个功率区间对空间电推进进行了分类综述。总结了国内外电推进技术的发展现状和存在的不足,提出了需要攻克的关键难点,研判了发展的主要趋势,归纳了存在的共性问题,提出了未来10年空间电推进技术的发展建议,供我国卫星用户、总体单位和空间电推进专业技术单位参考。     

场板结终端对金刚石SBD内部电场分布及击穿特性的影响

建立了场板结终端对金刚石肖特基势垒二极管(SBD)的数值模拟模型,采用Silvaco软件中的器件仿真工具ATLAS模拟了场板长度L、绝缘层厚度TOX、衬底掺杂浓度NB、场板结构形状对器件内部电场分布以及击穿电压的影响,并对结果进行了物理分析和解释。结果表明:当TOX=0.4μm、NB=1015cm-3、L在0~0.2μm范围内时,击穿电压随着L的增加而增加;L0.2μm后,击穿电压开始下降。当L=0.2μm、NB=1015cm-3、TOX在0.1~0.4μm范围内时,击穿电压随着TOX的增加而增加;TOX0.4μm后,击穿电压开始下降。当L=0.2μm、TOX=0.4μm、NB=1015cm-3时,器件的击穿电压达到最大的1 873 k V。与普通场板结构相比,采用台阶场板可以更加有效地提高器件的击穿电压。     

GaAs／GaAlAs激光器列阵有源区电场分布研究

用连续波电光检测法测量了激光器列阵发光区电场分布，并对其注入电流扩展了模拟讨论。     

用场发射显微镜研究单壁碳纳米管场发射

利用场发射显微镜在小于4.0×10-7Pa压强条件下研究了单壁碳纳米管微束在不同温度加热除气后的场发射变化,得出随着除气温度的升高,碳纳米管逸出功经历了从大到小再变大的变化过程.在清洁态(1000℃除气)对应有最小的逸出功,此时场发射图像显示出一定的细致结构.继续升高温度,碳纳米管发生塌缩.     

GaAs／AlGaAs发光二极管列阵场分布特性的电光测量

应用一种新颖的无损伤测量技术－连续波电光检测法（ＣＷＥＯＰ）对ＧａＡｓ／ＧａＡｌＡｓ单异质结发光管列阵电场分布进行了扫描测量。实验结果反映了器件内电流注入的方向和载流子扩展情况；通过比较各单元电场分布，反映器件发光均匀性。文中详细介绍了测量原理、实验装置和实验结果及讨论，最后用计算机对电场分布作了模拟计算并与实验结果进行了对照。     

光谱学方法研究介质阻挡沿面放电辉光模式的电场分布

利用介质阻挡沿面放电装置,在低气压空气中实现了辉光放电模式。利用光电倍增管对放电发光信号进行检测,发现外加电压每半周期出现一个发光脉冲,并且正负半周期的光脉冲是不对称的。利用Photoshop软件处理放电的照片,研究发现平行于高压电极不同位置的发光强度基本相同,然而距离高压电极越远,发光强度减小。放电中总电场由外加电场和电介质积累的壁电荷电场共同决定,确定该电场具有重要意义。通过分析放电的发射光谱中N+₂(B 2Σ+_u→X 2Σ+_g)谱线391.4 nm和N₂的第二正带系(C 3Π_u→B 3Π_g)谱线337.1 nm的比值,可以定性地说明电场的分布。研究发现电场在高压电极附近较大而远离高压电极处较小。这些研究结果对沿面放电的数值模拟和工业应用具有重要的价值。