绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响

通过对OTFT绝缘层SiO_2表面分别采用十八烷基三氯硅烷(OTS)处理和原子层沉积薄层氧化铝的修饰方式,制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大,但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后,器件的迁移率比修饰前分别增大了4倍和9倍,而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm~2/(V·s),开关比可达6.0×10~6。     

一种含横向圆柱形空腔的声学覆盖层的去耦机理分析

在水下结构表面敷设去耦覆盖层是降低其声辐射的有效途径. 为了深入分析一种含横向无限长空腔的覆盖层的去耦机理, 本文将其等效为均匀介质, 建立了敷设这种覆盖层的单向基体板在线激励下的声辐射模型, 验证了计算模型的有效性, 并利用计算模型对含横向空腔覆盖层的去耦机理进行了分析. 研究结果表明: 基体板-覆盖层接触面的能量流以纵波能量为主, 而横波能量很小, 因而计算覆盖层的去耦特性时可以忽略横波的作用; 和均匀覆盖层相比, 横向空腔型覆盖层在中高频段极大地增强了基体板的力阻抗, 从而更有效地抑制了基体板的振速; 此外, 和均匀覆盖层相比, 横向空腔型覆盖层和水的阻抗失配更大, 使其在中高频具有良好的振动传递损失特性. 因此, 总体而言, 含横向空腔的覆盖层相比均匀覆盖层具有更好的中高频去耦性能.     

硅基有机太阳能电池光学性能分析

采用传输矩阵法的光学模型以及MATLAB软件模拟了硅基有机太阳能电池对入射光的吸收率和各层厚度的关系。模拟表明活性层对入射光的吸收率主要受其自身厚度影响,且由于微腔效应,这种结构的电池可以很大程度上优化活性层厚度;另外通过调节折射率匹配层厚度和传输层厚度也可以优化活性层对入射光的吸收率。在本文所讨论的厚度中,最佳传输层厚度为10 nm左右,最佳匹配层厚度为30 nm ZnS或者60 nm Alq₃。     

Application of multi-buffer layer of (Zn,Mg)O/CdS in Cu2ZnSn(S,Se)4 solar cells

(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF₂ layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer.     

Motion of domain walls under the action of spin-polarized current in a magnetic junction

The effect of spin-polarized current on a domain structure in a magnetic junction consisting of two ferromagnetic metallic layers separated by an ultrathin nonmagnetic layer is studied within a phenomenological theory. The magnetization of one ferromagnetic layer (layer 1) is assumed to be fixed, while that of the other ferromagnetic layer (layer 2) can be freely oriented both parallel and antiparallel to the magnetization of layer 1. Layer 2 can be split into domains. Charge transfer from layer 1 to layer 2 is not attended with spin scattering by the interface but results in spin injection. Due to s-d exchange interaction, injected spins tend to orient the magnetization in the domains parallel to layer 1. This causes the domain walls to move and “favorable” domains to grow. The average magnetization current injected into layer 2 and its contribution to the s-d exchange energy are found by solving the continuity equation for carriers with spins pointing up and down. From the minimum condition for the total magnetic energy of the junction, the parameters of the periodic domain structure in layer 2 are determined as functions of current through the junction and magnetic field. It is shown that the spin-polarized current can magnetize layer 2 up to saturation even in the absence of an external magnetic field. The associated current densities are on the order of 10⁵ A/cm². In the presence of the field, its effect can be compensated by such a high current. Current-induced magnetization reversal in the layer is also possible.     

GaN基异质结缓冲层漏电分析

通过对GaN基异质结材料C-V特性中耗尽电容的比较,得出AlGaN/GaN异质结缓冲层漏电与成核层的关系.实验结果表明,基于蓝宝石衬底低温GaN成核层和SiC衬底高温AlN成核层的异质结材料比基于蓝宝石衬底低温AlN成核层异质结材料漏电小、背景载流子浓度低.深入分析发现,基于薄成核层的异质结材料在近衬底的GaN缓冲层中具有高浓度的n型GaN导电层,而基于厚成核层的异质结材料的GaN缓冲层则呈高阻特性.GaN缓冲层中的n型导电层是导致器件漏电主要因素之一,适当提高成核层的质量和厚度可有效降低GaN缓冲层的背景载流子浓度,提高GaN缓冲层的高阻特性,抑制缓冲层漏电. 关键词： AlGaN/GaN异质结 GaN缓冲层 漏电 成核层     

考虑熵层效应的扫掠激波/湍流边界层干扰特性研究

为了探究熵层对扫掠激波/湍流边界层干扰特性的影响规律,采用仿真方法对尖鳍/钝板物理模型进行研究。结果表明：扫掠激波上游的熵层厚度随着平板前缘钝化半径的增大而增加,同时边界层厚度也随着熵层厚度的增加而增加。熵层的引入并不改变扫掠激波/湍流边界层干扰固有的准锥形相似特性,也不会改变拟锥原点(virtual conical origin, VCO)的位置,仅会改变干扰形成的上游影响线和分离线的角度。扫掠激波/湍流边界层干扰形成的锥形主旋涡和角涡的尺度随着熵层厚度的增加而增大。上游熵层的引入增大了下游扫掠激波/湍流边界层干扰区的总压损失,但扫掠激波/湍流边界层干扰自身造成的相对总压损失并不受上游熵层的影响。     

内嵌CuO薄膜对并五苯薄膜晶体管性能的改善

制备了基于内嵌氧化物铜(CuO)薄膜的并五苯薄膜晶体管器件. 将3 nm CuO薄膜内嵌入到并五苯(pentacene)中, 作为空穴注入层, 降低电极与并五苯之间的空穴注入势垒. 相对于纯并五苯薄膜晶体管器件, 研制的晶体管的迁移率、阈值电压(V_TH)、电流开关比(I_on/I_off) 等参数都有明显改善. X射线光电子能谱数据表明, 这种空穴注入势垒的降低源自并五苯向CuO的电子转移.     

Efficiency improvement of red organic light-emitting diodes using a blue phosphorescent exciton blocking layer

Quantum efficiency of red organic light-emitting diodes was improved using a blue phosphorescent emitting layer as an exciton blocking layer. Compared with 8.1% quantum efficiency of standard devices without an exciton blocking layer, high quantum efficiency of 14.1% was obtained using a blue phosphorescent emitting layer between the hole transport layer and the red emitting layer.     

有机薄膜电致发光器件结构与发光特性的研究

从有机电致发光薄膜的发光机理出发，通过以Ａｌｑ薄膜器件、ＰＶＫ为空穴传输层和Ａｌｑ为发光层的双层 及ＰＶＫ掺荧光材料Ｐｅｒｙｌｅｎｅ的双层薄膜器件的研制，从器件的电致姚谱、电流密度－电压特性、亮度－电压特性的曲线的测试结果，计算分析了器件的流明效率、量子效率，并对有机薄膜电致发光器件的结构与发光特性之间的关系进行研究，利用能级理论分析了器件的姚特性随器件的结构不同所具有的规律。实验表明，加入ＰＶＫ     

超声换能器辐射特性的优化*

匹配层和背衬层是换能器的重要组成部分,对换能器特性有重要影响。针对发射型换能器,基于有/无匹配层和空气/树脂背衬两种条件组合,该文研究了匹配层与背衬层对换能器辐射特性的影响。结果表明,负载材料为水时,空气背衬换能器相较于树脂背衬换能器声能辐射效率更高;匹配层可以提高换能器的主瓣能量,抑制旁瓣能量及旁瓣数量。因此,针对发射型换能器的设计,背衬材料的选择应遵循与压电材料的阻抗差异越大越优的原则;匹配层的合理设计不仅可以提高超声换能器的声能辐射效率,还可以提高主瓣旁瓣峰值比,使声能更集中。     

含负折射率材料的一维光子晶体缺陷模式的研究

采用光学传输矩阵方法,研究了由正折射率材料和负折射率材料交替组成的一维光子晶体中带有缺陷层时的光学传输特性.计算了含有普通电介质插层和有吸收的介质插层两种情况下的透射谱.结果表明,在正入射时,对于普通电介质插层,随插层厚度的增大,缺陷模的个数增多;对于有吸收特性的介质插层,随插层厚度的增大和吸收特性的增强,缺陷模式并没有出现,而是表现为对透射峰的明显增益.     

Influence of Transited Layer of Multilayer on X-ray Diffraction Intensity and Calculation of the Thickness

This paper integrates the roughness with the diffuse layer as a transited layer factor for study of influence of the practical interface on the X-ray diffraction intensity of multilayer. By the study of a simple model of transited layer presented in this paper, it is given a formula to describe the quantitative relation of the transited layer with the X-ray diffraction intensity. The calculated thickness of transited layer of Mo/Si multilayer is given, which is consisted with the values measured with the high resolution microscopy.     

Influence of Transited Layer of Multilayer on X-ray Diffraction Intensity and Calculation of the Thickness

1 IntroductionThe study of the roughness of multilayers has been widely reported, the roughnesswas considered as a Debye factor and detedrined by fitting the theoretical reflectivitywith the measured reflectivityL'--']. HOwever, the practical interfacial structUre oftenincludeS the roughness and the diffuse layer, both Of which have the different influenceon the X-my reflectivity, separately. So it is not very reaSOnable only consider theroUghness of the interface as a Debye factor.We kno…     

The modeling of the radiation and response green's function of a fluid-loaded cylindrical shell with an external compliant layer

Scattering and radiation of acoustic waves from a fluid-loaded cylindrical shell with an external compliant layer are of interest. The compliant layer can be modeled by a normally reacting impedance layer, which has the advantage that complex compliant layer geometries, such as partial compliant layers, can be considered. A question may, however, arise as to the accuracy of this approach. A more rigorous approach is to model the elastic shell and compliant layer using a multilayer shell theory, which has the disadvantage that it cannot be extended to consider partial layers. In this paper scattering results from the normally reacting compliant layer model are compared to those from the multilayer shell model to show that the two approaches produce similar results, except for thickness resonances of the compliant layer. Having established the consistency between the two approaches, results for the far-field acoustic radiation as a function of frequency and radiation angle for a fluid-loaded shell with an external compliant layer excited by an internal ring force are obtained using the normally reacting impedance layer model. These results clearly show the reduction in the far field radiation due to the presence of the compliant layer.     

Thermal stress-induced fracture of coating layer of galvannealed steel

The thermal stress-induced multiple fracture of the Fe-Zn intermetallic compound coating layer of galvannealed steel was investigated for samples with IF (interstitial free steel) and SPCC (steel plate cold commercial, Japanese Industrial Standard) as substrates. The analysis of the measured length of the multiply fractured coating layer showed that the fracture strength of the coating layer was 260–280 MPa and the residual stress around 720–740 MPa of the coating layer was reduced to around 130–140 MPa through the multiple fracture. The influences of the coating layer thickness and the stress–strain curve of the substrate on the multiple fracture behavior of the coating layer were also clarified.     

激光冲击对E690高强钢激光熔覆修复微观组织的影响

为研究激光冲击对E690高强钢激光熔覆修复层微观组织的影响,选用专用金属粉末对E690高强钢试样预制凹坑进行激光熔覆修复,并使用脉冲激光对激光熔覆层进行冲击强化处理,同时采用扫描电镜、透射电镜和X射线应力分析仪分别对激光冲击前后激光熔覆层的微观组织和表面残余应力进行检测。结果表明:激光熔覆修复后,激光熔覆层组织为等轴晶,熔覆层与E690高强钢基体之间冶金结合良好,其表面残余应力为均匀分布的压应力。经激光冲击后,激光熔覆层截面晶粒得到细化,并观察到大量的形变孪晶,互相平行的孪晶界分割熔覆层粗大晶粒,在激光熔覆层的晶粒细化过程中发挥着重要作用;试样表层位错在{110}滑移面上发生交滑移,在晶界周围形成了位错缠结。经激光冲击后,激光熔覆层冲击区域表面残余压应力数值相较于冲击前提升了1.1倍。     

A flow control study of a supersonic mixing layer via NPLS

The flow control of a supersonic mixing layer was studied in a supersonic mixing layer wind tunnel with convective Mach number (Mc) at 0.5. The passive control of the mixing layer was achieved by perturbation tapes on the trailing edge of the splitter plate. The control effects of 2D and 3D perturbation tapes with different sizes were compared. The mixing layer was visualized via NPLS, and the transient fine structures were identifiable in NPLS images, which were used to analyze the effects of flow control. The results show that the 2D tapes can enhance the 2D characteristic of the mixing layer, delaying mixing layer transition; and the 3D tapes can enhance the 3D characteristic of the mixing layer, advancing mixing layer transition. 3D structures of the mixing layer were visualized, and the H-type Λ vortexes were found with 3D tapes control.     

Investigation of fabrication and hetero-epitaxy relationship of CoCrPt thin films grown on CrW underlayer

This paper reports that longitudinally oriented CoCrPt thin films with Cr₈₅W₁₅ underlayer and CoCr intermediate layer for use of giant magnetoresistance heads were fabricated by magnetron sputtering. Without CoCr intermediate layer, CoCrPt layer deposited directly on Cr₈₅W₁₅ underlayer which has a dominant (200) texture exhibits unexpected (10\bar {1}1) texture. After introducing CoCr intermediate layer, the CoCrPt layer shifts into (11\bar {2}0) texture. This article studies the crystallographic hetero-epitaxy relationship between magnetic layer and underlayer in order to understand the appearance of CoCrPt (10\bar {1}1) texture on (200) textured Cr underlayer and the influence of CoCr intermediate layer on the inducement of CoCrPt (11\bar {2}0) texture. The CoCr intermediate layer plays a crucial role in controlling the microstructure and consequently the magnetic properties of the overlying magnetic layer.     

不同盖层对InAs/GaAs量子点结构和光学性质的影响

利用金属有机化合物气相沉积设备生长了不同盖层结构的InAs/GaAs量子点,采用原子力显微镜和光致发光光谱仪对量子点的结构和光学性质进行了研究.量子点层之间的盖层由一个低温层和一个高温层组成.对不同材料结构的低温盖层的对比研究表明,In组分渐变的InGaAs低温盖层有利于改善量子点均匀性、减少结合岛数目、提高光致发光强度;当组分渐变InGaAs低温盖层厚度由6.8 nm增加到12 nm,发光波长从1256.0 nm红移到1314.4 nm.另外,还对不同材料结构的高温盖层进行了对比分析,发现高温盖层采用In组分渐变的InGaAs材料有利于光致发光谱强度的提高. 关键词： 半导体量子点 盖层 组分渐变