共查询到20条相似文献,搜索用时 31 毫秒
1.
J. Gebauer F. Rudolf A. Polity R. Krause-Rehberg J. Martin P. Becker 《Applied Physics A: Materials Science & Processing》1999,68(4):411-416
14 cm-3 in FZ-Si was obtained.
Received: 2 June 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999 相似文献
2.
A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon 总被引:2,自引:0,他引:2
M.L. Gong J.X. Shi W.K. Wong K.K. Shiu W.H. Zheng K.W. Cheah 《Applied Physics A: Materials Science & Processing》1999,68(1):107-110
21 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than
both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around
1.54 μm was observed for the first time without any post-doping annealing.
Received: 3 September 1998/Accepted: 9 September 1998 相似文献
3.
4.
2 laser-induced pyrolysis of silane in a flow reactor, based on scattering of He-Ne laser light by a particulate in the reaction
flame. The scattering and extinction measurements have been used to measure nucleation and growth kinetics of silicon powders
within the reaction zone. The experience gained by this technique allowed synthesis of silicon particles with a wide size
range.
Received: 29 April 1998/Accepted: 30 April 1998 相似文献
5.
-4 . Neither the absolute values nor the temperature dependence of adsorption on the terraces are affected by the misorientation.
Received: 3 November 1998 相似文献
6.
C. Faivre D. Bellet G. Dolino 《The European Physical Journal B - Condensed Matter and Complex Systems》1999,7(1):19-36
The phase transitions of non-polar organic fluids and of water, confined in the pores of porous silicon samples, were investigated
by Differential Scanning Calorimetry (DSC). Two types of PS samples (p- and p+ type) with different pore size and morphology were used (with spherical pores with a radius of about 1.5 nm and cylindrical
shape with a radius of about 4 nm respectively). The DSC results clearly show that the smaller the pores are, the larger is
the decrease in the transition temperature. Moreover, a larger hysteresis between melting and freezing is observed for p+ type than for p- type samples. A critical review of the thermodynamical properties of small particles and confined fluids is presented and
used to interpret and discuss our DSC results. The effects of the chemical dissolution as well as the influence of anodization
time are presented, showing that thick p+ type porous silicon layers are non-homogeneous. The DSC technique which was used for the first time to investigate fluids
confined in porous silicon, enables us to deduce original information, such as the pore size distribution, the decrease in
the freezing temperature of confined water, and the thickness of non-freezing liquid layer at the pore wall surface.
Received: 11 May 1998 / Revised and Accepted: 29 July 1998 相似文献
7.
Iron and its complexes in silicon 总被引:3,自引:0,他引:3
A.A. Istratov H. Hieslmair E.R. Weber 《Applied Physics A: Materials Science & Processing》1999,69(1):13-44
This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive summary
of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section
of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated
expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting
experimental data obtained by different groups are discussed. The second section of the article considers the electrical and
the structural properties of complexes of interstitial iron with shallow acceptors (boron, aluminum, indium, gallium, and
thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur,
oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow acceptors, the dissociation
of these pairs, and the metastability of iron–acceptor pairs. The parameters of iron-related defects in silicon are summarized
in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy
levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity
of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization
of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional
cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties
of iron that are not yet completely understood and need further research are outlined.
Received: 14 December 1998 / Accepted: 22 February 1999 / Published online: 26 May 1999 相似文献
8.
R.B. Wehrspohn J.-N. Chazalviel F. Ozanam I. Solomon 《The European Physical Journal B - Condensed Matter and Complex Systems》1999,8(2):179-193
Light-emitting porous amorphous silicon has been produced by anodization in HF of hydrogenated amorphous silicon films. The
maximal thickness of the porous films is limited by the onset of an instability which results in the formation of large channels
short-circuiting the amorphous layer. This is due to the high resistivity of the amorphous silicon films as compared to that
of the electrolyte. Confinement effects on the electron wavefunction are analyzed in situ using photoluminescence measurements in hydrofluoric acid and compared to those observed in porous crystalline silicon. For
crystalline silicon, a huge blue shift of the photoluminescence is observable upon reducing the size of the structures by
photo-etch, showing clear evidence of quantum confinement effects in this material. No shift has been observed when carrying
out the same experiment with amorphous silicon. This indicates that the extent of the wavefunction in the bandtail states
involved in luminescence is too small to be sensitive to confinement down to the minimum sizes of our porous material ( 3 nm). Measurements of the width and the temperature dependence of the photoluminescence demonstrate that the Urbach energy
does not change upon increasing the porosity, i.e., upon decreasing the size of the a-Si:H nanostructures, in contradiction with what has been reported in ultrathin a-Si:H multilayers.
Received: 3 August 1998 相似文献
9.
J.J. Yu J.Y. Zhang I.W. Boyd Y.F. Lu 《Applied Physics A: Materials Science & Processing》2001,72(1):35-39
Highly resolved micropatterns induced on SiO2-coated Si sample surfaces have been investigated using a KrF excimer laser (λ: 248 nm and τ: 23 ns). Uniform micropatterns
were observed to form in the oxide layer after laser-induced melting of interfaces. The pattern size can be controlled either
by the laser parameters or even by the oxide layer thickness. SEM analysis identified that the micropatterns were virtually
initiated at the molten interface and the oxide layer followed the interface patterning to change its profile. Simulation
of laser interaction with double-layered structures indicated that the oxide layer could melt or be ablated due to interface
superheating when it was deposited on a highly absorbing Si substrate. IR analysis has demonstrated that the structural properties
of the SiO2 layer undergo no appreciable changes after laser radiation. This process provides a possible basis for its application in
micropatterning of transparent materials using excimer lasers.
Received: 4 September 2000 / Accepted: 13 September 2000 / Published online: 30 November 2000 相似文献
10.
B. Prevot C. Fuchs R. Henck E. Fogarassy 《Applied Physics A: Materials Science & Processing》1998,67(2):139-145
Received: 10 February 1998/Accepted: 12 February 1998 相似文献
11.
J.H. Liang 《Applied Physics A: Materials Science & Processing》1998,67(3):361-365
Received: 27 October 1997/Accepted: 9 January 1998 相似文献
12.
Reversible and athermal photo-vitrification of As50Se50 thin films deposited onto silicon wafer and glass substrates 总被引:1,自引:0,他引:1
R. Prieto-Alcón E. Márquez J.M. González-Leal R. Jiménez-Garay A.V. Kolobov M. Frumar 《Applied Physics A: Materials Science & Processing》1999,68(6):653-661
Photo-vitrification of As50Se50 thin films deposited onto silicon wafer and glass substrates has been studied using X-ray diffraction, far-infrared, and
differential infrared spectroscopies. The optical study of this photo-amorphization effect has been carried out by two different
methods enabling the determination of the average thickness and refractive index of a wedge-shaped thin film. The refractive-index
behaviour of the as-evaporated, crystallized, and photo-vitrified As50Se50 films is analyzed within the single-oscillator approach. The optical-absorption edge is described using the non-direct transition
model, and the optical energy gap is calculated. In the course of the vitrification of an As50Se50 thin film deposited on a silicon substrate the photo-oxidation of the film has been additionally detected and arsenic trioxide
micro-crystals were formed on the surface of the film. Such oxidation has not been observed with As50Se50 films deposited on glass substrates, which demonstrates that the photo-vitrification phenomenon depends also on the type
of substrate. Finally, it is concluded from the optical study that a reversible photo-darkening effect accompanies the photo-induced
vitrification phenomenon.
Received: 3 August 1998 / Accepted: 13 January 1999 / Published online: 7 April 1999 相似文献
13.
Surface nanostructuring of silicon 总被引:1,自引:0,他引:1
A.J. Pedraza J.D. Fowlkes Y.-F. Guan 《Applied Physics A: Materials Science & Processing》2003,77(2):277-284
Irradiation with polarized laser light of 248-nm wavelength induces the formation of periodic undulations ∼10-nm-highon flat
silicon substrates. The wavelength of these periodic structures is a function of the light wavelength and the angle of incidence
of the laser beam. Linear arrays of silicon nanoparticles with fairly uniform size that extended up to a millimeter were formed
if the irradiation was performed using polarized light. When non-polarized laser light with the same fluence was used to illuminate
an initially flat surface, non-aligned nanoparticle strings were obtained. However, if part of the irradiated area was microstructured,
nanoparticle linear arrays resulted in the vicinity of the microstructured region. An analysis on the evolution of these nanostructures
is presented. Nanocolumns could be grown on top of every cone of a microstructured surface upon cumulative laser irradiation
with non-polarized light, reaching a height of ∼3 μm and a diameter of 100–200 nm. The mechanisms of nanocolumn origin and
growth are analyzed.
Received: 16 December 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003
RID="*"
ID="*"Corresponding author. Fax: +1-865/974-4115, E-mail: apedraza@utk.edu 相似文献
14.
A. Bergamin G. Cavagnero G. Mana G. Zosi 《The European Physical Journal B - Condensed Matter and Complex Systems》1999,9(2):225-232
In order to reduce measurement uncertainty of the (220) lattice spacing of silicon to a few parts per 109, a combined X-ray and optical interferometer capable of millimeter scans is being tested. A new series of measurements confirmed
the value obtained with our previous set-up, and the bounds of measurement uncertainty were investigated. The article supplements
the analysis of the error budget and provides a safer footing for the monocrystalline silicon lattice parameter value.
Received 13 August 1998 相似文献
15.
K. Haberland P. Kurpas M. Pristovsek J.-T. Zettler M. Weyers W. Richter 《Applied Physics A: Materials Science & Processing》1999,68(3):309-313
Received: 21 October 1998 / Accepted: 23 October 1998 相似文献
16.
Iron contamination in silicon technology 总被引:3,自引:0,他引:3
A.A. Istratov H. Hieslmair E.R. Weber 《Applied Physics A: Materials Science & Processing》2000,70(5):489-534
This article continues the review of fundamental physical properties of iron and its complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied research of iron in silicon technology. The first section of this article
presents an analysis of the effect of iron on devices, including integrated circuits, power devices, and solar cells. Then,
sources of unintentional iron contamination and reaction paths of iron during device manufacturing are discussed. Experimental
techniques to measure trace contamination levels of iron in silicon, such as minority carrier lifetime techniques (SPV, μ-PCD,
and ELYMAT), deep-level transient spectroscopy (DLTS), total X-ray fluorescence (TXRF) and vapor-phase decomposition TXRF
(VPD-TXRF), atomic absorption spectroscopy (AAS), mass spectrometry and its modifications (SIMS, SNMS, ICP-MS), and neutron
activation analysis (NAA) are reviewed in the second section of the article. Prospective analytical tools, such as heavy-ion
backscattering spectroscopy (HIBS) and synchrotron-based X-ray microprobe techniques (XPS, XANES, XRF) are briefly discussed.
The third section includes a discussion of the present achievements and challenges of the electrochemistry and physics of
cleaning of silicon wafers, with an emphasis on removal of iron contamination from the wafers. Finally, the techniques for
gettering of iron are presented.
Received: 16 November 1999 / Accepted: 7 January 2000 / Published online: 5 April 2000 相似文献
17.
A. Tilke L. Pescini R.H. Blick H. Lorenz J.P. Kotthaus 《Applied Physics A: Materials Science & Processing》2000,71(4):357-365
We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films.
Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken
wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel
of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic
structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending
highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application
as well as the study of electron–phonon interaction.
Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000 相似文献
18.
Received: 14 April 1998/Accepted: 22 April 1998 相似文献
19.
M. Feuerhake J.-H. Klein-Wiele G. Marowsky P. Simon 《Applied Physics A: Materials Science & Processing》1998,67(5):603-606
Received: 27 July 1998/Accepted: 28 July 1998 相似文献
20.
V. Palyok A. Mishak I. Szabó D.L. Beke A. Kikineshi 《Applied Physics A: Materials Science & Processing》1999,68(4):489-492
Received: 13 October 1998 / Accepted: 9 December 1998 / Published online: 24 February 1999 相似文献