Electronic charge distribution of the polarizable O2− ion in MgO and CaO in contrast to the F− ion in NaF

The electronic charge densities of NaF, MgO, and CaO are obtained by self-consistent band structure calculations using the augmented plane wave (APW) method. The fact that F^– is stable, whilst O^2– is unstable as a free ion affects the radial charge density of fluorides and ionic oxides significantly. The Watson sphere model can simulate the stabilizing crystalline environment of an O^2– ion and provides an ionic density which, when superposed with the cation density, leads to a radial charge density in excellent agreement with the one obtained by our APW calculations. It is therefore meaningful to speak of an O^2– ion, although the corresponding wave functions are more extended for O^2– than for F^–. Furthermore, the Watson sphere model can account for the main differences of the oxygen radial density between MgO and CaO and demonstrates that the polarizable O^2– ion is strongly affected by its environment.     

Effect of the atomic number of the support on space-charge buildup in electron-irradiated dielectric films

A study is made of the effect of the atomic number z_s of the support on the charging of thin dielectric films irradiated with 50-keV electrons at beam densities of 10^–5–10^–4 A·m². It is shown that at larger z_s the ratio between the charge-injection and pair-production rate increases, producing a higher space-charge buildup efficiency. The maximum charge increases with the current density, while is not affected. It is found that the charging process is associated with a spacecharge current.Translated from Izvestiya Vysshikh Uchebnkh Zavedenii, Fizika, pp. 14–18, No. 1, January, 1986.     

Thomas-Fermi model of a many-particle oscillator

An equation of the Thomas-Fermi type has been obtained and solved numerically for a many-particle oscillator — a system of N electrons in a potential field of a harmonic oscillator. The electron density distribution in the system has been found. An analogous model has been formulated in the theory of atomic nucleus and used to calculate the charge density distribution in⁴⁰Ca in good agreement with the available experimental data.Odessa Hydrometeorological Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 66–72, July, 1992.     

An “instantaneous” distribution of the ionization-passive electrons and holes under irradiation of a dielectric by intense electron or laser beams

A method is worked out for calculation of an “instantaneous” energy distribution of the ionization-passive electrons and holes resulting from the electron-electron collisions before the onset of electron-phonon relaxation under 10⁻¹⁵–10⁻¹⁴ s irradiation of a dielectric by an intense electron or laser beam. The method is based on the solution of a system of integral-differential kinetic equations of general form. The Auger and impact ionization as well as hole recoil due to the momentum conservation law are taken into account in calculations. The “instantaneous” distribution is calculated in NaCl under irradiation of the sample by a high-density electron beam. The “instantaneous” distribution of ionization-passive electrons and holes is the initial one in solutions of all kinetic equations describing further relaxation of electron excitations in irradiated materials.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 15–22, November, 2004.     

Ultra-fast dynamics of electron thermalization,cooling and transport effects in Ru(001)

Time-resolved two-photon photoelectron spectroscopy is used to study the dynamics of non-equilibrium electron and hole distributions at bare and D₂O-covered Ru(001) following optical excitation (55-fs, 800-nm pulses) with variable fluence (0.04–0.6 mJcm^-2). Within the first 0.5 ps we observe an ultra-fast transient of the excited-carrier population and energy density at the surface which is accompanied by pronounced deviations of the electron-energy distribution from a (thermalized) Fermi–Dirac distribution. Comparison of the transient energy density of the photoexcited electrons at the surface with predictions of the two-temperature model provides fair agreement up to 400 fs, but exhibits a systematically lower energy density at later times, where electrons and phonons are equilibrated. We propose that this reduced energy density at the surface originates from ultra-fast energy transport of non-thermal electrons into the bulk in competition to electron–phonon coupling at the surface. This is corroborated by extending the two-temperature model to account for non-thermal, photoexcited electrons, whereby quantitative agreement with experiment can only be achieved if ballistic transport and reduced electron–phonon coupling is incorporated for non-thermal electrons. Implications for surface femtochemistry are discussed. PACS 78.47.+p; 71.38.-k; 73.40.-c     

Intensity distributions of spectral lines and elementary processes in a negative glow discharge column

The connection is established between the intensity distributions of the spectral lines along a negative glow discharge column and the individual elementary processes which take place in a low-temperature nonequilibrium plasma (direct electron excitation, step processes, recombination, collisions of the second kind, and charge exchange). The experiments were made in pure inert gases and mixtures of them at pressures 1–30 mm Hg and discharge current densities of 10^–2–10⁺¹ mA/cm². Knowledge of the intensity distributions together with some additional data (such as the electron density, the energy distribution function of the electrons, and the population of the levels) makes it possible to estimate more accurately the rates and cross sections of the reactions which lead to excitation of the glow discharge.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 41–49, July, 1980.     

Charge Exchange of the Centers in Electron–Irradiated Zinc Selenide

The optical absorption induced by the photosensitive centers formed upon electron irradiation (E = 5 MeV, = 1.7·10¹⁸ cm^–2) of polycrystalline ZnSe has been studied. A comparison of the optical properties of the irradiated crystals with the known data for ZnS has allowed the assumption that the 496–, 563–, and 652–nm bands in ZnSe are associated with the anion vacancies being in different charge states. The ratio between the concentrations of the optical absorption centers in the crystals photoexcited at 80 K is determined by the electron traps participating in the processes of charge exchange of the vacancies.     

Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2

It is shown that in the forbidden band of the plasmochemical SiO₂ there are electron capture centers with capture cross section 2·10^–13cm², density 2·10¹⁹ cm^–3, and thermal activation energy 0.41 eV for the process of trap emptying. It is noted that the charge state of the insulator in an external electric field is unstable, this being due to the exchange of electrons between the insulator and the aluminum electrode. An energy band diagram of the structure is deduced from the results of the investigation. The potential barrier heights were found to be 2.78 eV at the Al-SiO₂ interface and 4.36 eV at the SiO₂-Si interface. The dynamical current-voltage characteristic of the structure is used to determine the density of mobile ions in the insulator, which is found to be S·10¹³ cm^–2 at T=230°C and rate of change 5 mV/sec of the voltage.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 61–66, January, 1981.     

Positron lifetime and 2D-ACAR studies of divacancies in Si

We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V₂) with the definite charge states, V ₂ ⁰ , V ₂ ^–1 or V ₂ ^–2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V ₂ ^– using a specimen containing oriented divacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Energy distributions and emission coefficients of secondary ions ejected from AIIIBV group semiconductors

The energy distributions of Ga⁺ and Ga₂ ⁺ secondary ions sputtered from the surface of single crystals of GaAs and GaP by Ar⁺ (E = 18 keV, j = 1·10^–6 A/cm²) ions were studied. Integral emission coefficients for secondary ions from four semiconductors (GaAs, GaP, InAs, and A1_0.35Ga_0.65As) bombarded by Ar⁺ ions (E = 2 keV, j₀ = 1·10^–6 A/cm²) were also measured. It is shown that the energy distribution of the Ga⁺ secondary ions are broad and qualitatively similar to distributions of secondary ions sputtered from metal oxide surfaces. Very high integral emission coefficients (up to 20–30%) for secondary ions are also observed, exceeding analogous coefficients for clean metal surfaces. These facts (the significant number of low energy secondary electrons and high secondary ion emission coefficients) are due to the lower density of free electrons in comparison with metals, which ensures a high degree of survival of sputtered ions, and the partially ionic character of the bonds in the semiconductors under study.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 88–92, November, 1990.     

Concentrations and velocity distributions of positive ions in laser ablation of copper

It is shown that the generation of secondary electrons by excited neutrals hitting a surface makes the so-called probe method unsuited for measuring the positive ion fraction in laser ablation plumes. Experiments have been performed in a modified set-up, in which the disturbance by secondary electrons is avoided. For a typical case of Cu irradiated in ultra-high vacuum by nanosecond excimer laser pulses of 3 J cm^–2 the ionized fraction is about 10^–8 at a distance of 60 cm. This number is in fair agreement with Saha-Langmuir predictions based on the assumption of local thermal equilibrium at an estimated temperature of about 3000K. Angular-resolved time-of-flight measurements show that there are three different ion velocity distributions. A slow contribution (kinetic energy 2eV) with an angular distribution peaked along the normal, and two fast, isotropic contributions (kinetic energy 20–50 eV). The fast contributions are attributed to ions involved in a Coulomb explosion.     

Electrical behavior of size-controlled Si nanocrystals arranged as single layers

A metal–oxide–semiconductor structure containing a single layer of size-controlled silicon nanocrystals embedded into gate oxide was fabricated. Size control for the silicon nanocrystals was realized by using a SiO₂/SiO/SiO₂ layer structure with the embedded SiO layer having the thickness of the desired Si nanocrystals and using a high-temperature annealing for forming the silicon nanocrystals. Current–voltage, capacitance–voltage, and conductance–voltage characteristics were measured for a sample containing 4-nm-sized crystals. From the Fowler–Nordheim plot an effective barrier height of 1.6 eV is estimated for our silicon nanocrystals. Electron trapping, storing, and de-trapping in silicon nanocrystals were observed by capacitance–voltage and conductance–voltage measurements. The charge density was measured to be 1.6×10¹² /cm², which is nearly identical to the silicon-nanocrystal density measured approximately via a transmission electron microscopy image. Conductance measurements reveal a very low interface charge of our structure. PACS 72.80.Sk; 73.63.Bd; 73.40.Qv     

Generation of secondary electrons and radiation defects in matter during absorption of electrons with energy above 1 MeV

Using the model of sections with one-dimensional geometry, the output of electrons generated by electrons with energies from 1 to 10 MeV is considered as a function of the thickness and the atomic number of various absorbers. The depth distributions of thermalized electrons and radiation defect profiles are calculated for the model absorbers KCl and NaCl. Radiation defects due to irreversible displacement of lattice atoms upon elastic scattering of rapid electrons are considered. The microphotometry method is used to obtain depth distributions of enrichment centers in the ionic crystals KCl and NaCl for irradiation by electrons with energies E=1, 1.5, and 2 MeV for electron-beam incidence on the absorbers at angles of₀=0, 20, 45°. The integral density of the incident beam was varied from 1·10¹⁴ to 6·10¹⁵ cm^–2. It was found that in ionic crystals the enrichment center density is proportional to the density of thermalized electrons, if the concentration of radiation defects generated is less than 1% of the density of preradiation anion vacancies.Presented at the Third All-Union Conference on Radiation Physics and the Chemistry of Ionic Crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 105–111, April, 1977.     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

Optoelectrical investigations on MOS-sandwiches at low temperatures

MOS-structures are irradiated with light of energy from 1.5 to 6 eV at different temperatures (300, 77, 12 K) while the resulting photocurrent is measured. At high photon energies (hv>4 eV) the threshold energy and the scattering mean free path for electrons at the Si — SiO₂-interface are determined. They are independent from temperature. At low photon energies (hv<3 eV) electrons are released from traps with energy levels 1.2 and 1.9 eV below the Si-conduction band. The trap concentration is 4.8 10¹³ cm^–3. The capture cross section is measured in a rather direct way. The temperature and electrical field dependence of this cross section is explained by a trapping model.     

Electron trapping levels in silicon dioxide thermally grown on silicon

Photocurrents associated with optical release of photoinjected electrons trapped in thin films of amorphous silicon dioxide have been studied. Temporal and spectral variation of the photocurrents were examined in detail: the effects on spectrally resolved response caused by variations in applied electrical field, wavelength sweep rate, and optical belaching are reported. All measurements were made on metal-oxide-semiconductor capacitors. The experiments were interpreted in terms of a straightforward model of optical excitation and transport of electrons out of localized energy levels in the silicon dioxide band gap. Semi-quantitative analysis indicated that a distribution of states peaked approximately 2·1 eV below the conduction band edge was associated with an electron trapping center distributed rather uniformly throughout the oxide film. In the wet thermal oxide specimens examined, the average density of trapping centers was greater than 10¹⁴ cm⁻³. A time-stable spread in energy of approximately 0·5 eV was measured, and was attributed to local disorder in the amorphous insulator. The existence of an optically inactive charge distribution in the oxide films, with bulk average density greater than 10¹⁵ cm⁻³, was indicated by collected charge vs. applied field data.     

Properties of MOS-structures based on anode-oxidized CdSnAs2

The properties of metal (Al, Au)-anodic oxide-CdSnAs₂ monocrystal structures are studied. It is established that MOS-structures using undoped CdSnAs₂ crystals show a high positive fixed charge in the anodic oxide (N_S 5·10¹² cm^–2) and high surface state density on the oxide-CdSnAs₂ boundary surface (N_SS 2·10¹³ cm^–2·eV^–1). In MOS-structures using diffusion-doped (copper) crystals the sign of the fixed charge is negative (N_S 10¹¹ cm^–2, N_SS 2·10¹² cm^–2·eV^–1). The latter structures show a definite photosensitivity and photomemory. The possibility of effective control of the fixed charge value within the oxide by illumination is shown. The surface state distribution over energy, time constant, and capture section is determined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 90–93, September, 1982.     

Low temperature magnetostriction and magnetization of RE x Y1−x Pd3-alloys

Low temperature magnetostriction and magnetization measurements are reported for the series of RE _x Y_1–x Pd₃ alloys and for some REPd₃ compounds. The magnetostriction per Rare Earth ion is nearly independent of concentration and conserves volume at low fields. In both the alloys and compounds with the heavy Rare Earths and with Nd the magnetostriction tends to saturate at high fields together with the magnetization. The saturated quadrupolar magnetostriction as extracted from these data via the Callen projection, is of order a few times 10^–3 per Rare Earth ion. Sign and magnitude of this quadrupole do not correlate with the Stevens factor. The results are discussed in terms of aspherical screening of the nuclear charge from the outer valence electrons by the intervening 4f charge distribution.Supported by Sonderforschungsbereich 125, Deutsche Forschungsgemeinschaft, FRG     

The magnitude of the transferred charge in the silent discharge in oxygen

A pulse amplitude analyser was used to measure the distribution functions of the transferred charge in the silent discharge in oxygen under the atmospheric pressure. The charges transferred by one microdischarge were established from these distribution functions. Their magnitude varies from 3×10^–11 C to 1·3×10^–9 C on changing the width of the discharge gap from 0·2 mm to 3·2 mm, respectively.