HDI瘦身工艺的开发及量产

随着电子工业的发展,电子元器件的集成度越来越高,体积越来越小,市场对PCB上BGA的要求也越来越高,为保证产品有较高的集程度,客户在设计BGA时往往会为了增加密度将pitch减小,从而在给线路制作增加难度的同时也改变了原有的结构。本文主要通过对0.5 mm间距BGA两阶HDI及0.4 mm间距BGA一阶HDI在设计、制作流程及制作能力上的不同进行分析后二阶HDI转为一阶HDI设计是可行的,但同时也会增加线路的制作难度,为降低制作难度,我们对涨缩、图形转移及阻焊对位精度进行了系统分析控制,目前此类设计的板已经实现批量生产。     

Mass Production of High‐Quality Transition Metal Dichalcogenides Nanosheets via a Molten Salt Method

2D transition metal dichalcogenides (TMDs) are well suited for energy storage and field–effect transistors because of their thickness‐dependent chemical and physical properties. However, as current synthetic methods for 2D TMDs cannot integrate both advantages of liquid‐phase syntheses (i.e., massive production and homogeneity) and chemical vapor deposition (i.e., high quality and large lateral size), it still remains a great challenge for mass production of high‐quality 2D TMDs. Here, a molten salt method to massively synthesize various high‐crystalline TMDs nanosheets (MoS₂, WS₂, MoSe₂, and WSe₂) with the thicknesses less than 5 nm is reported, with the production yield over 68% with the reaction time of only several minutes. Additionally, the thickness and size of the as‐synthesized nanosheets can be readily controlled through adjusting reaction time and temperature. The as‐synthesized MoSe₂ nanosheets exhibit good electrochemical performance as pseudocapacitive materials. It is further anticipates that this work will provide a promising strategy for rapid mass production of high‐quality nonoxides nanosheets for energy‐related applications and beyond.     

Defect-Induced Electron Redistribution between Pt-N3S1 Single Atomic Sites and Pt Clusters for Synergistic Electrocatalytic Hydrogen Production with Ultra-High Mass Activity

A N, S co-doped carbon with abundant vacancy defects (NSC) anchored Pt single atoms (SAs) and nanoclusters (NCs) derived from coal pitch by a self-assembly-pyrolysis strategy is reported and a defect-induced electron redistribution effect based on Pt SAs-Pt NCs/NSC catalyst is proposed for electrocatalytic hydrogen evolution reaction (HER). The optimized catalyst featuring Pt-N₃S₁ SAs and Pt NCs dual active sites exhibit excellent HER activity with an overpotential of 192 mV at a current density of 400 mA cm⁻², a turnover frequency of 30.1 s⁻¹ at an overpotential of 150 mV, which the mass activity is 13716 mA mg_Pt⁻¹, 7.4 times higher than that of 20% Pt/C catalyst. In situ Raman revealsa direct correlation between the defect structure of the catalyst and hydrogen adsorption during the reaction process. Density functional theory calculation shows the defect-induced electron redistribution between Pt-N₃S₁ SAs and Pt NCs. The electrons are transferred from Pt NCs to Pt SAs, which increases the number of electrons on the surface of Pt SAs and enhances the adsorption ability of H⁺. Meanwhile, the dissociation ability of H* on the Pt NCs is promoted, thus synergistically promoting the HER process.     

JIT／精益生产方法在PCB制造行业的应用

本文主要介绍了JIT/精益生产的内涵、目标及其基本组成部分,就其管理理念、原则在PCB制造生产管理中的 实际应用进行了一些介绍。JIT/精益生产方法能使企业的加工成本更低、缺陷更少、柔性更强。     

HgCdTe外延材料批量化生产及其质量控制

经过多年研发,我司的碲镉汞(HgCdTe)红外焦平面探测器已达到批量生产的水平。优异性能的红外探测器离不开高质量的HgCdTe外延材料,外延材料的厚度及组分均匀性、表面缺陷的控制以及HgCdTe外延/CdZnTe衬底晶格匹配度是批量化生产中需要控制的关键性因素,红外探测器的批量化生产也给HgCdTe外延材料质量稳定性以及一致性的控制提出了更高的要求。本文介绍了HgCdTe外延材料批量化生产中这几项关键指标的控制,以及外延质量优化后红外焦平面性能的提升。Abstract:关键词:     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

飞行时间质谱法研究新型氧化物阴极的蒸发

阴极的蒸发是评价阴极性能的一个重要指标，它直接关系到微波管的稳定性和寿命。采用飞行时间质谱法 (ToFMS)，分析气-液相合成碳酸盐制备贮存式氧化物阴极在分解、激活过程中及激活后的蒸发物。结果表明：新型碳酸盐阴极纯净无杂质，在常规分解工艺过程中能够充分分解和激活；激活时阴极涂层内产生盈余Ba，此时检测到Ba 的蒸发；在微波管最高工作温度时没有检测到活性物质，不会因为Ba 蒸发过快而造成阴极寿命和发射电流快速降低。     

高清体育实况直播的环绕声制作

对近年来所从事的体育赛事电视公共信号制作进行了系统的总结归纳,详细分析了体育赛事环绕声实时制作的特点,并对如何科学规范、规律客观地进行环绕声制作,从几个方面提出了自己的衡量标准。     

挥发性有机污染物实时在线化学电离质谱测量方法研究

以<大气污染物综合排放标准>(GB 16297-1996)中有机物的实时在线测量为目的.对自行研制的质子转移反应质谱(proton transfer reaction mass spectrometry,PTR-MS)装置的参数进行了优化和测量.利用高纯N2稀释的单一有机物PTR-MS测量结果表明,在E/N=144 Td条件下,质子化的有机物离子为主要的产物离子峰,没有明显的碎片离子存在.测试了进样系统中催化转化装置的性能,给出了11种挥发性有机物的探测灵敏度和检测下限,讨论了PTR-MS的测量精度.测试结果表明,自行研制的PTR-MS能够实时在线监测<大气污染物综合排放标准>中规定的有机污染物.     

新一代超高速SiGe BiCMOS工艺研究进展

综述了近年来国际上SiGe BiCMOS工艺的最新研究成果和工艺量产情况,具体展现和讨论了不同机构所研发的器件结构、工艺流程及其性能,并且展望了器件及工艺进一步优化的方向。虽然目前传统的双多晶自对准选择性外延基区结构实现了最佳的量产性能,但受限于内外基区连接电阻和选择性外延基区薄膜的不均匀性,其器件性能很难再有进一步提高。非选择性外延基区结构在实验室获得了极高的性能,但其自对准特性较低,这妨碍了其工业量产和更大规模集成。维持HBT器件与更小尺寸基线CMOS的工艺兼容性变得越来越困难。对高性能、工业量产和低成本进行综合,仍然是一项具有较大挑战性的任务。