Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

In the framework of density functional theory(DFT), we have studied the electronic properties of alkene/alkynehydrosilylated silicon nanocrystals(Si NCs) in the size range from 0.8 nm to 1.6 nm. Among the alkenes with all kinds of functional groups considered in this work, only those containing –NH2and –C4H3S lead to significant hydrosilylationinduced changes in the gap between the highest occupied molecular orbital(HOMO) and the lowest unoccupied molecular orbital(LUMO) of an Si NC at the ground state. The quantum confinement effect is dominant for all of the alkenehydrosilylated Si NCs at the ground state. At the excited state, the prevailing effect of surface chemistry only occurs at the smallest(0.8 nm) Si NCs hydrosilylated with alkenes containing –NH2and –C4H3S. Although the alkyne hydrosilylation gives rise to a more significant surface chemistry effect than alkene hydrosilylation, the quantum confinement effect remains dominant for alkyne-hydrosilylated Si NCs at the ground state. However, at the excited state, the effect of surface chemistry induced by the hydrosilylation with conjugated alkynes is strong enough to prevail over that of quantum confinement.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.     

Effect of annealing on performance of PEDOT:PSS/n-GaN Schottky solar cells

We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT：PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage （Voc） increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT：PSS/GaN Schottky contact induced by variation of the work function of the PEDOT：PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT：PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density （ISC） up to 160 ℃ and the dropoff in ISC after annealing at 200 ℃.     

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward 1-V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations.     

Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on A1N/GaN and A1GaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an A1GaN/GaN diode by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostrncture results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an A1GaN/GaN diode.     

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency rangeElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency rangeElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

The perylene （C20H12） layer effect on the electrical and dielectric properties of Al/p-Si （MS） and Al/perylene/p-Si （MPS） diodes have been investigated and compared in the frequency range of 0.7 kHz-2 MHz. Experimental results show that C-V characteristics give an anomalous peak for two structures at low frequencies due to interface states （Nss） and series resistance （Rs）. The increases in C and G/o3 at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant （er） and dielectric loss （e＇） are subtracted using C and G/co data at 1.5 V. The eI and e＂ values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln（o＇ac）-ln（w） for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C 2-V characteristics, the doping acceptor atom concentration （NA） and barrier height （,~） for Schottky barrier diodes （SBDs） 1.303 ~ 1015 cm-3, and 1.10 and I. 13 eV, respectively. of MS and MPS types are also obtained to be 1.484 ~ 1015 and     

F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

An improved deconvolution method for X-ray coded imaging in inertial confinement fusion

In inertial confinement fusion （ICF）, X-ray coded imaging is considered as the most potential means to diagnose the compressed core. The traditional Richardson-Lucy （RL） method has a strong ability to deblur the image where the noise follows the Poisson distribution. However, it always suffers from over-fitting and noise amplification, especially when the signal-to-noise ratio of image is relatively low. In this paper, we propose an improved deconvolution method for X-ray coded imaging. We model the image data as a set of independent Gaussian distributions and derive the iterative solution with a maximum-likelihood scheme. The experimental results on X-ray coded imaging data demonstrate that this method is superior to the RL method in terms of anti-overfitting and noise suppression.     

Diagnostic technique for measuring fusion reaction rate for inertial confinement fusion experiments at Shen Guang-Ⅲ prototype laser facility

A study is conducted using a two-dimensional simulation program （Lared-s） with the goal of developing a technique to evaluate the effect of Rayleigh-Taylor growth in a neutron fusion reaction region. Two peaks of fusion reaction rate are simulated by using a two-dimensional simulation program （Lared-s） and confirmed by the experimental results. A neutron temporal diagnostic （NTD） system is developed with a high temporal resolution of - 30 ps at the Shen Guang-Ⅲ （SG-Ⅲ） prototype laser facility in China, to measure the fusion reaction rate history. With the shape of neutron reaction rate curve and the spherical harmonic function in this paper, the degree of Rayleigh-Taylor growth and the main source of the neutron yield in our experiment can be estimated qualitatively. This technique, including the diagnostic system and the simulation program, may provide important information for obtaining a higher neutron yield in implosion experiments of inertial confinement fusion.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

Effects of Atomic Mixing in Inertial Confinement Fusion by Multifluid Interpenetration Mix Model

The effects of atomic-level rnixing are systemically investigated in a multifluid interpenetration mix model ,and results are compared with the single-fluid model＇s simulations and experimental data. It is shown that increasing the model free parameter α, shock Mach number, and the initial density discontinuity makes the mix length and fraction of mixing particle increase, resulting in the lower shock temperatures compared with the results of single-fluid model without mixing. Recent high-compressibility direct-drive spherical implosions on OMEGA are simulated by the interpenetration mix modal. The calculations with atomic mixing between fuel and shell match quite well with the observations. Without considering any mixing, the calculated neutron yields and ion temperatures are overpredicted; while inclusion of the interpenetration mix model with the adjustable parameter α could fit the simulated neutron yields and ion temperatures well with experimental data.     

Teleportation of N-qubit W State without Bell-State Measurement via Selective Resonant Interaction in Cavity QED

We present a scheme in which the N-atom W state is teleported by employing the selective interaction of a cavity field with a driven three-level atom in the A configuration and detecting a single atom in one of the ground states. The long-lived W state is teleported from atom A to atom B when the atoms B and A are sent through a cavity successively and atom A is then detected. The advantage is that the present one does not involve the Bell-state measurement and is robust against the atomic spontaneous emission.     

Generating Even-Photon State via Resonant Interaction Between Ladder-Type Three-Level Atoms with a Single-Mode Field

A scheme is presented to generate even-photon state based on resonant interaction between ladder-type three-level atoms with a single-mode field. In the scheme, a sequence of suitably prepared ladder-type three-level atoms are orderly sent through a single-mode cavity initiaJly in vacuum state. The detection of a J1 the atoms in the ground states collapses the cavity to the desired state. The scheme is based on the resonant interaction of atoms with the cavity, and thus the required interaction time can be greatly shortened. This is important in view of decoherence.     

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors （MOSFETs） are explored by using quantum mechanism effects for thin-body devices. The results suggest that for small nonnegative Schottky barrier heights, even for zero barrier height, the tunnelling current also plays a role in the total on-state current. Owing to the thin body of device, quantum confinement raises the electron energy levels in the silicon, and the tradeoff takes place between the quantum confinement energy and Schottky barrier lowering （SBL）. It is concluded that the inclusion of the quantum mechanism effect in this model, which considers an infinite rectangular well with a first-order perturbation in the channel, can lead to the good agreement with numerical result for thin silicon film. The error increases with silicon thickness increasing.     

Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

The photoluminescence （PL） characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.     

An Efficient Scheme for Multiparty Multi-particle State Sharing

We present an efficient scheme for sharing an arbitrary m-qubit state with n agents. In our scheme, the sender Alice first shares m Bell states with the agent Bob, who is designated to recover the original m-qubit state. Furthermore, Alice introduces n- 1 auxiliary particles in the initial state ｜0）, applies Hadamard （H） gate and Controlled-Not （CNOT） gate operations on the particles, which make them entangled with one of m particle pairs in Bell states, and then sends them to the controllers （i.e., other n - 1 agents）, where each controller only holds one particle in hand. After Alice performing m Bell-basis measurements and each controller a single-particle measurement, the recover Bob can obtain the original unknown quantum state by applying the corresponding local unitary operations on his particles. Its intrinsic efficiency for qubits approaches 100%, and the total efficiency really approaches the maximal value.     

Metric of States

Metric of quantum states plays an important role in quantum information theory. In this letter, we find the deep connection between quantum logic theory and quantum information theory. Using the method of quantum logic, we can get a famous inequality in quantum information theory, and we answer a question raised by S. Gudder.     

Multiformity of Optical Quantum Coherence Systems with Y and Inverted Y-type Schemes

Y and inverted Y-type four-level schemes for optical quantum coherence systems, which may be intuitively considered to be very simple, have not been studied intensively till now. In this paper, we present the multiformity of these two types of schemes by considering that they can be classified into nine possible level styles as the second-order sub-schemes using laser fields. Further we point out the complexity of their more than one hundred realistic configurations as the third-order four-level sub-schemes that may appear in the optical quantum coherence experiments. Throughout this paper we review which configurations have been studied in some research aspects and which ones not, according to our knowledge, in order to be propitious to next steps of theoretical and experimental investigations, especially for applications in the fields of quantum optics, quantum information science, laser spectroscopy, and so on.     

Entropy of Quantum Dynamical Systems and Sufficient Families in Orthomodular Lattices with Bayessian State

The purpose of the present paper is to study the entropy hs（Ф） of a quantum dynamical systems Ф = （ L, s, Ф）, where s is a bayessian state on an orthomodular lattice L. Having introduced the notion of entropy hs（ Ф, A） of partition A of a Boolean algebra B with respect to a state s and a state preserving homomorphism Ф, we prove a few results on that, define the entropy of a dynamical system hs（Ф）, and show its invariance. The concept of sufficient families is also given and we establish that hs （Ф） comes out to be equal to the supremum of hs （Ф,A）, where A varies over any sufficient family. The present theory has then been extended to the quantum dynamical system （ L, s, Ф）, which as an effect of the theory of commutators and Bell inequalities can equivalently be replaced by the dynamical system （B, s0, Ф）, where B is a Boolean algebra and so is a state on B.