Stabilization of the pentagonal surface of the icosahedral AlPdMn quasicrystal by controlled Si absorption

The Debye-temperature of the pentagonal surface of the icosahedral AlPdMn quasicrystal (QC) is measured by means of low-energy electron diffraction after the absorption of different amounts of Si. We observe an increase of the surface Debye-temperature from 300±7 K for the freshly prepared surface to 330±7 K after the absorption of 60-Å Si. Because the quasicrystalline order persists at the surface in spite of the diffusion of Si into the substrate, we suggest that the diffusion is dominated by a vacancy-mediated process.     

Nanostructural and surface morphological evolution of chemically sprayed SnO2 thin films

Physical properties of a nanocrystalline thin film is greatly influenced by its morphological and structural evolution. We try to understand the transition of SnO₂ thin films from amorphous to nanocrystalline structure with XRD, IR, SEM, AFM and surface profiler studies. A 2D layer like structure resulting from quantum confinement is found for the films prepared at 400 °C. We observed a new IR band at 530 cm⁻¹ that was theoretically predicted and report it for the first time. A correlation of population of defects in SnO₂ films with change in lattice parameters and FWHM of IR bands are reported. The electric and optical properties of the films have been discussed.     

Elaboration of self-organized magnetic nanoparticles by selective cobalt silicidation

Self-organized magnetic nanoparticles are obtained through selective silicidation of cobalt using a silicon substrate pre-structured with tri-dimensional gold islands as template. On the step bunches array of a vicinal Si(1 1 1) surface, gold deposition results in the formation of nanodroplets aligned along the step bunches. A subsequent cobalt deposition is performed onto this gold islands-covered Si surface, with two silicidation processes investigated: reactive deposition (RD) and solid phase reaction (SPR). The cobalt is converted into a non-magnetic silicide film except where the surface is locally masked by the gold islands, giving rise to cobalt nanomagnets which can be capped by a gold layer. A scanning tunneling microscopy comparative study of RD and SPR processes demonstrates that the former induces strong surface morphology changes while the latter preserves the pristine islands. Magnetic measurements performed with alternating gradient force magnetometry at room temperature are used to demonstrate the presence of ferromagnetic cobalt nanoparticles on SPR-processed samples. These nanomagnets show a clear in-plane anisotropy behavior.     

Atomic structure of CaF2/MnF2-Si(1 1 1) superlattices from X-ray diffraction

X-ray reflectivity and non-specular crystal truncation rod scans have been used to determine the three-dimensional atomic structure of the buried CaF₂-Si(1 1 1) interface and ultrathin films of MnF₂ and CaF₂ within a superlattice. We show that ultrathin films of MnF₂, below a critical thickness of approximately four monolayers, are crystalline, pseudomorphic, and adopt the fluorite structure of CaF₂. High temperature deposition of the CaF₂ buffer layer produces a fully reacted, CaF₂-Si(1 1 1) type-B interface. The mature, “long” interface is shown to consist of a partially occupied layer of CaF bonded to the Si substrate, followed by a distorted CaF layer. Our atomistic, semi-kinematical scattering method extends the slab reflectivity method by providing in-plane structural information.     

Point-contact study of the heavy-fermion superconductor CeCoIn5

We have investigated the differential conductance spectra of the point contacts between the heavy-fermion superconductor CeCoIn₅ and Pt. Many of them show a double-maximum structure that indicates the superconducting energy gap Δ. The Δ values derived using Blonder-Tinkham-Klapwijk model, however, varies from 0.47 to 0.77 meV, and yet they are within the scatter of the reported values. The evolution of Δ below T_c is slow as compared with that of BCS gap probably reflecting the unconventional superconductivity in CeCoIn₅.     

Anomalies of the phonon properties in multiferroic BiFeO3 thin films near the magnetic phase transition temperature

Size, substrate, doping and magnetic field effects on the phonon properties in multiferroic BiFeO₃ thin films are studied based on a microscopic model. We obtain an anomaly near the magnetic phase transition temperature TN which can be attributed to the magnetoelectric nature of BiFeO₃ and strong anharmonic spin-phonon interaction. It is shown that due to crystal lattice distortion for dopants with ionic radius smaller than that of the host ions the phonon energy decreases (for example Tb or Ti), whereas for the opposite case (larger radius of the doping ions, for example Co or Ni) it increases. The phonon damping is always enhanced compared to the undoped thin film.     

Proximity effects in a superconductor/ferromagnet junction

A proximity effect in an s-wave superconductor/ferromagnet (SC/F) junction is theoretically studied using the second order perturbation theory for the tunneling Hamiltonian and Green's function method. We calculate a pair amplitude induced by the proximity effect in a weak ferromagnetic metal (FM) and a half-metal (HM). In the SC/FM junction, it is found that a spin-singlet pair amplitude (Ψ_s) and spin-triplet pair amplitude (Ψ_t) are induced in FM and both amplitudes depend on the frequency in the Matsubara representation. Ψ_s is an even function and Ψ_t is an odd function with respect to the Matsubara frequency (ω_n). In the SC/HM junction, we examine the proximity effects by taking account of magnon excitations in HM. It is found that the triplet-pair correlation is induced in HM. The induced pair amplitude in HM shows a damped oscillation as a function of the position and contains the terms of even and odd functions of ω_n as in the case of the SC/FM junction. We discuss that in our tunneling model the pair amplitude of even function of ω_n only contributes to a Josephson current.     

Cuprate superconductors in the vicinity of a Pomeranchuk instability

We propose that cuprate superconductors are in the vicinity of a spontaneous d-wave type Fermi surface symmetry breaking, often called a d-wave Pomeranchuk instability. This idea is explored by means of a comprehensive study of magnetic excitations within the slave-boson mean-field theory of the t-J model. We can naturally understand the pronounced xy anisotropy of magnetic excitations in untwinned YBa₂Cu₃O_y and the sizable change of incommensurability of magnetic excitations at the transition temperature to the low-temperature tetragonal lattice structure in La_2-xBa_xCuO₄. In addition, the present theoretical framework allows the understanding of the similarities and differences of magnetic excitations in Y-based and La-based cuprates.     

Ground-state properties of the one-dimensional extended Hubbard model at half filling

The density-matrix renormalization group (DMRG) technique is used to study the ground-state properties of the one-dimensional half-filled Hubbard model with on-site (nearest-neighbor) repulsive interaction U (V) and nearest-neighbor hopping t. We calculate the static spin structure factor to consider the spin degrees of freedom. We notice a striking difference of the static spin structure factor among the spin-density-wave, charge-density-wave (CDW), and bond-order-wave (BOW) phases. Based on the results, we identify the BOW-CDW transition at small (large) U value as continuous (of first order). We also calculate the double occupancy to consider the charge degrees of freedom. For large U, the double occupancy show a discontinuous jump at the BOW-CDW critical point and it implies first-order transition. With decreasing U, the jump becomes smaller and vanishes at the tricritical point U_t≈5.961t. This value is close to our previous estimation U_t=5.89t obtained with other quantities. Consequently, the results of static spin structure factor and double occupancy support the accuracy of our ground-state phase diagram.     

Structural modifications of diamond like carbon films induced by MeV nitrogen ion irradiation

Diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates using plasma deposition technique. The deposited films were irradiated using 2 MeV N⁺ ions at fluences of 1×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm². Samples have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). Analysis of Raman spectra shows a gradual shift of both D and G band peaks towards higher frequencies along with an increase of the intensity ratio, I(D)/I(G), with increasing ion fluence in irradiation. These results are consistent with an increase of sp² bonding. XPS results also show a monotonic increase of sp²/sp³ hybridization ratio with increasing ion fluence. Plan view TEM images show the formation of clusters in the irradiated DLC films. HRTEM micrographs from the samples irradiated at a fluence of 5×10¹⁵ ions/cm² show the lattice image with an average interplanar spacing of 0.34 nm, revealing that the clusters are graphite clusters. The crystallographic planes in these clusters are somewhat distorted compared to the perfect graphite structure.     

High pressure structural studies on SrRuO3

We have performed room temperature high pressure structural studies on the ferromagnetic perovskite SrRuO₃ to 34 GPa. We have also used three different pressure media (silicone fluid, 4:1 methanol:ethanol and argon) to test for possible effects of pressure media on compression data. The orthorhombic perovskite structure is stable to the highest pressure, and the data can be fit with a bulk modulus of with a pressure derivative of for all of the pressure media. We have also examined the high pressure behavior of the RuO₆ octahedra using a model that assumes the octahedra are not distorted. Various tilt angles around the ideal cubic perovskite axes are found and can be used to estimate the Ru-O-Ru bond angle that is known to be directly related to the ferromagnetic Curie temperature. For all pressure media, there appears to be a minimum in the Ru-O-Ru bond angle around 15 GPa. Implications for the observed high pressure magnetic behavior of SrRuO₃ will be discussed.     

The static and dynamic properties of PuCoGa5 and NpCoGa5 investigated by neutron scattering experiments

Neutron scattering results on single crystals shed light on the static and dynamic properties of the superconductor () PuCoGa₅ and its isostructural but antiferromagnetic () homologue NpCoGa₅. By polarized neutron diffraction the magnetization density in the paramagnetic state of both compounds has been inferred. The microscopic magnetization of NpCoGa₅ is consistent with the orbital and spin components of a localized Np³⁺ magnetic moment. In the case of PuCoGa₅ the microscopic magnetization is small, temperature-independent and cannot be described as a localized Pu³⁺ magnetic moment. For NpCoGa₅ a dynamic magnetic signal has been observed by three-axis spectroscopy in the antiferromagnetically ordered state. The magnetic signal is strongest at the antiferromagnetic zone center and an energy transfer of about 5 meV. Magnetic fluctuations persist at this position in the paramagnetic state. The dynamic response is similar to the dynamic response observed in other actinide intermetallic compounds. This supports the possibility that magnetic fluctuations could also be present in the paramagnetic superconductor PuCoGa₅.     

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge₂Sb₂Te₅ (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 m. After the programming signals of more than 2×10⁶ cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1×10¹⁰ cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.     

Quaternary metallic ferrimagnets based on antiferromagnetic semiconductor MnTe

We use an accurate full-potential density-functional method to systematically study MnTe-based quaternary magnetic compounds: Mn₆ZnAlTe₈, Mn₆ZnGaTe₈, Mn₆CdAlTe₈, and Mn₆CdGaTe₈. The co-substitution of group-II and group-III atoms for a quarter of Mn atoms changes the antiferromagnetic MnTe semiconductor into ferrimagnetic (FM) metal because the extra electron, introduced by the trivalent atom, as effective carrier makes Mn spins within nonmagnetic substitutional layers orient uniformly. Quite high spin polarization can be achieved for the electrons at the Fermi level in the co-substituted structures. This could make a novel approach to promising FM materials. The quaternary metallic ferrimagnets could have potential applications for spintronic devices.     

Charge dynamics and optical properties of layered cobaltates

We study the charge dynamics and electronic structure by optical spectroscopy technique. Here we focus on the following four issues: (1) the evolution of optical spectra with Na content; (2) the spectral features specific to different regions in the phase diagram; (3) the c-axis optical response for crystal at the A-type antiferromagnetic region; (4) the optical response of misfit-layered Bi₂M₂Co₂O_y (M=Ba, Sr, Ca) and Ca₃Co₄O_y single crystals.     

Properties of the Ising magnet confined in a corner geometry

The properties of Ising square lattices with nearest neighbor ferromagnetic exchange confined in a corner geometry, are studied by means of Monte Carlo simulations. Free boundary conditions at which boundary magnetic fields ±h are applied, i.e., at the two boundary rows ending at the lower left corner a field +h acts, while at the two boundary rows ending at the upper right corner a field −h acts. For temperatures T less than the critical temperature T_c of the bulk, this boundary condition leads to the formation of two domains with opposite orientation of the magnetization direction, separated by an interface which for T larger than the filling transition temperature T_f(h) runs from the upper left corner to the lower right corner, while for T<T_f(h) this interface is localized either close to the lower left corner or close to the upper right corner. It is shown that for T=T_f(h) the magnetization profile m(z) in the z-direction normal to the interface simply is linear and the interfacial width scales as w∝L, while for T>T_f(h) it scales as . The distribution P(?) of the interface position ? (measured along the z-direction from the corners) decays exponentially for T<T_f(h) from either corner, is essentially flat for T=T_f(h), and is a Gaussian centered at the middle of the diagonal for T>T_f(h). Unlike the findings for critical wetting in the thin film geometry of the Ising model, the Monte Carlo results for corner wetting are in very good agreement with the theoretical predictions.     

Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

High-κ dielectrics SrZrO₃ were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 °C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO₃ became polycrystalline in the meantime.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Measurement of the F5/2 and H(2)9/2 manifold lifetime in Nd:YLiF4

We present direct measurements of the lifetime of the ⁴F_5/2 and ²H(2)_9/2 manifold in Nd³⁺:YLiF₄, using a fluorescence pump-probe technique. The technique populates the ⁴F_5/2 and ²H(2)_9/2 manifold directly with a pump pulse. Via excited state absorption from this excited manifold, the ²F(2)_5/2 manifold of Nd³⁺ is populated with a delayed probe pulse. The population in the ⁴F_5/2 and ²H(2)_9/2 manifold is monitored as a function of time by observing the change in integrated UV fluorescence from the ²F(2)_5/2 manifold for each time delay between pump and probe pulses. The pump and probe beams come from the fundamental and second harmonic wavelengths of a femtosecond Ti:sapphire regenerative amplifier. The measured lifetime agrees well with the energy gap law, based on other nonradiative lifetime measurements from the literature for Nd³⁺:YLiF₄.     

Effects of pressure ratio on population inversion in a DF chemical laser with concurrent lasing

A numerical simulation is presented for investigating the effects of pressure ratio of D₂ injector to supersonic nozzle on the population inversion in the DF chemical laser cavity, while a lasing concurrently takes place. The chemical laser is generally used for the industrial process and manufacturing as well as the military weapon system, which requires high power characteristic of laser system rather than the others. The population inversion is absolutely needed to generate the laser beam and is non-equilibrium process. The laser beam is generated between the mirrors in the cavity and it is important to obtain stronger population inversion and more uniform distribution of the excited molecules in the laser cavity in order to produce high-power laser beam with good quality. In this study, these phenomena are investigated by means of analyzing the distributions of the DF excited molecules and the F atom used as an oxidant, while simultaneously estimating the maximum small signal and saturated gains and power in the DF chemical laser cavity. For the numerical solution, a fully conservative implicit method and a second order total variation diminishing (TVD) scheme are used with the finite-volume method (FVM). An 11-species (including DF molecules in various excited states of energies), 32-step chemistry model is adopted for the chemical reaction of the DF chemical laser system. The results are discussed by comparison with two D₂ injector pressure cases; 192 and 388.64 torr. Major results reveal that in the resonator, stronger population inversions occur in the all transitions except DF(1)-DF(0), when the D₂ injection pressure is lower. But, the higher D₂ injection pressure provides a favorable condition for DF(1)-DF(0) transition to generate the higher power laser beam. In other words, as the pressure of D₂ injector increases, the maximum small signal gain in the v_1-0 transition, which is in charge of generating most of laser power, becomes higher. Therefore, the total laser beam power becomes higher.