Classification of Mechanoluminescence

On the basis of the processes involved in inducing luminescence, mechanoluminescence (ML) may be classified into different types, such as: (i) piezo-electrification-induced fracto ML, (ii) defective-phase piezo-electrification-induced fracto ML, (iii) charged dislocation electrification-induced fracto ML, (iv) baro diffusion electrification-induced fracto ML, (v) chemically-induced fracto ML, (vi) thermally stimulated fracto ML, (vii) incandescent fracto ML, (viii) stress perturbation-induced fracto ML, (ix) thermal excitation-induced fracto ML, (x) mechanically excited ML, (xi) deep trap-induced fracto ML, (xii) dislocation mechanical interaction-induced plastico ML, (xiii) dislocation electrostatic interaction-induced plastico ML, (xiv) charged dislocation electrification-induced plastico ML, (xv) thermal excitation-induced plastico ML, (xvi) dislocation mechanical interaction-induced elastico ML, (xvii) dislocation electrostatic interaction-induced elastico ML, (xviii) thermal excitation-induced elastico ML, (xix) electrically induced tribo ML, (xx) chemically-induced tribo ML, (xix) electrically induced tribo ML, (xx) chemically-induced tribo ML, and (xxi) thermally-induced tribo ML. It is expected that the processes involving dislocation electrostatic interaction-induced elastico ML and thermal excitation-induced elastico ML may provide suitable ML materials in future.     

Influence of chlorine-fluorine substitution on the electrical properties of some fluoride glasses

Study of electrical properties of two series of glasses (ZrF₄)₅₄(BaF₂)₃₀(ThF₄)₅(LaF₃)₃(RbF)_8(1−x)(RbCl)_8x (0 x 1) and (ZrF₄)₅₀(BaF₂)₃₀(ThF₄)₅(LaF₃)₃(RbF)_12(1−x)(RbCl)_12x (0 x 1) demonstrates the existence of a mixed mobile anion effect in these anion-conducting glasses. The effective medium approach has been applied to these materials: a satisfactory fitting is obtained as a function of the Cl/(Cl + F) ratio and temperature; the ionic transport in these glasses takes place along preferential pathways.     

Study of the mesomorphism of benzoates and cinnamates

Two ester homologous series of carboxy (-COO-) and ethylene-carboxy (-CH=CH-COO-) mesogens, viz. α-4-[4’-n-alkoxybenzoyloxy] phenyl β-4’’-methoxy benzoyl ethylenes (1) and α-4-[4’-n-alkoxy cinnamoyloxy phenyl β-4’’-methoxy benzoyl ethylenes (2)] are discussed. Series (1) and (2) differ at their central linking group. Mesophase are observed at four and five number members in both homologue series. Enantiotropic nematogenic property is observed in both series (1) and (2), while some smectic property is exhibited in series (2). Thermal stability of nematic-isotropic in series (1) is relatively low as compared to (2), smectogenic property is totally absent in series (2). In phase diagram, solid-nematic, solid-isotropic, and nematic-isotropic curve follow zigzag path rising and falling. Transition temperatures are observed through hot stage polarizing microscope. Analytical data supports the structure of molecules. Threaded, Schlieren-type textures of homologues are observed through microscope.     

Crystal Structure of a Metallohybrid Acid of 1,3,5-Benzenetricarboxylic Acid of Copper(II)

Abstract The crystal structure of a metallohybrid carboxylic acid obtained from the reaction of 1,3,5-benzenetricarboxylic acid (TCAH3) with copper(II)acetate monohydrate in the presence of pyridine (py) having composition Cu(py)₂(TCAH2)₂(H₂O)₂ [1] is reported. It crystallizes in triclinic space group P-1 and with a = 7.0110(3)?, b = 8.9523(5)?, c = 11.5370(5) ?, α = 79.776(3) °, β = 82.881(3)°, γ = 83.628(3)°, and V = 704.18(6)?³. The hydrogen bond in 1 is compared with the hydrogen bond pattern in the structure of 1,3-dicarbomethoxy 4,6-benzenedicarboxylic acid, which crystallizes in mononclinic space group P21/c and has unit cell parameters of a = 6.9549(16)?, b = 8.7676(15)?, c = 20.111(4)?; β = 92.585(17) ° and V = 1225.1(4) ?³. Index Abstract Crystal structure of a metallohybrid carboxylic acid obtained from the reaction of 1,3,5-benzenetricarboxylic acid with copper(II)acetate monohydrate in the presence of pyridine is determined and compared with hydrogen bond pattern present in the structure of 1,3-dicarbomethoxy 4,6-benzenedicarboxylic acid. Crystal structure of a metallohybrid acid of 1,3,5-benzenetricarboxylic acid of copper(II). Kusum Bania, Nilotpal Barooah, Rupam Sarma, Jubaraj B. Baruah     

Oriented growth of whiskers of AIIIBV compounds by VLS-mechanism

The oriented growth of GaAs, GaP, InAs and GaInAs whiskers on the same (GaAs, GaP) or different (InAs/GaAs, GaInAs/GaAs) substrates was studied. A detailed morphological study of GaAs whiskers on polar A(III), B(111 ) and non-polar (001), (011) substrates was performed. The growth conditions for ordered (perpendicular to substrate) growth on the A(111) and B(111 ) faces were determined. There were found discrete spectra of whisker systems on all substrates with the preferential growth of “arsenic” B{111 } faces. The dependence of the growth rate on the whisker diameter is typical for the vapour-liquid-solid (VLS) mechanism and is used for the determination of kinetic coefficients for polar faces. There was observed a periodic instability in growth of InAs and GaInAs whiskers.     

Synthesis and characterization of rigid rode shape homologous series: Effect of tail iodo group

Arylpiperazine derivatives referred in this article possessed antitumor activity, which were synthesized and crystallized through the gradual evaporation process. The molecular structures of 2-(4-(2-(4-phenylpiperazin-1-yl)ethyl)benzyl)isoindoline-1,3-dione (C27H27N3O2, 1), 2-(4-(2-(4-(4-bromophenyl)piperazin-1-yl)ethyl)benzyl)isoindoline-1,3-dione (C27H26BrN3O2, 2) and 2-(4-(2-(4-(4-chlorophenyl)piperazin-1-yl)ethyl)benzyl)isoindoline-1,3-dione (C27H26ClN3O2, 3) were determi-ned and described. π-π interactions were observed in the packing modes of three compounds, and compound 2 and 3 showed halogen interactions between molecules nearby, which were different from compound 1. The dihedral angle values, the bond lengths, bond angles and the parameters demonstrated that involvement of halogen atoms did affect the conformation, configuration and cell parameter of the compounds.     

S吸附对SiC表面不同重构结构的影响

SiC表面重构的发生会引起表面态密度增加,极大地影响SiC功率器件的性能.本文对4H/6H-SiC(0001)-Si端的(3×3)R30°和(3×3)重构结构及3C-SiC(0001)-Si端的(3×2)和(2×1)重构结构分别进行了S原子的吸附研究.结果表明:吸附S原子可以打开表面重构键,不同重构结构均有向体结构恢复的趋势.(3×3)R30°和(3×3)重构的最佳吸附率分别是1/2ML和1/3ML,S吸附对(3×3)R30°重构的作用更大.(3×2)重构表面在1/6ML下的H3位吸附、(2×1)重构表面在1/2ML下的B位吸附时吸附能最低.S钝化后,3C-SiC比4H/6H-SiC体系表面吸附能小,更稳定,重构结构恢复更理想.     

Rheed studies of the initial stages of the oxidation of tungsten

Reflection mode high energy electron diffraction (RHEED) has been used in an ultra high vacuum environment to study the initial stages of the oxidation of (100) and (110) tungsten single crystal surfaces.     

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9% (In) and 47.1% (Sb). X‐ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range from 22.36 to 32.59 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having the crystalline nature. Raman peak located at 191.26 cm^–1 shift towards the lower frequencies and narrows with increase in deposition temperature. This indicates that the crystallinity is improved in the films deposited at higher substrate temperatures. Hall measurements indicate that the films were p‐type, having carrier concentration ≅10¹⁶ cm^–3 and mobility (4–7.7) ×10³ cm²/Vs. It is observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure of phosphonium rhenates(VII)

Four phosphonium rhenates(VII) were prepared and crystallized: (A) 1,2-bis (triphenylphosphonium)ethane rhenate(VII) (Pī, a=8.298(2), b=10.638(3), c= 11.242(3) ?, α=64.96(2), β=80.49(2), γ=88.17(2)°), (B) methyltriphenylphosphonium rhenate(VII) (Pca2₁, a=15.096(3), b=12.627(3), c=19.353(3) ?), (C) benzyltriphenylphosphonium rhenate(VII) (Pī, a=9.648(2), b=11.689(2), c=20.806(3) ?, α=88.44(2), β=84.63(2), γ=77.33(3)°), and (D) orthorhombic form of (iodomethyl)triphenylphosphonium rhenate(VII) (Pca2₁, a=14.952(3), b=13.120(3), c=20.603(4) ?). Each crystal structure consists of separate phosphonium cations and rhenate(VII) anions. In A centrosymmetric 1,2-bis(triphenylphosphonium)ethane cations form layers perpendicular to [011]. In B the cations are set in chains along [100] forming layers perpendicular to [001]. In C two symmetrically-independent cations form double columns along [100] and these columns are arranged in puckered layers perpendicular to [001]. D is almost isomorphous to B. The crystal structures are stabilised by weak C–H⋯O hydrogen bonds as well as phenyl rings interactions. In all crystal structures supramolecular motifs of phenyl rings embraces could be distinguished.     

Mesomorphism of azo-esters and chalcone-esters

One chalcone-ester homologous series of mesogens α-4-[4^/-n-alkoxybenzoyloxy phenyl β-4^//methoxy benzoyl ethylenes (A) and one azo-ester homologous series of mesogens p-(p^/-n-alkoxybenzoyloxy) phenyl azo-p^//-methoxy benzene (B) being structurally similar are discussed. Both series (A) and (B) differ in respect of central bridges linking two phenyl rings. Mesomorphic properties start from 6th and 1st member of series (A) and (B) respectively. In series (A), 6th to 12th members show both smectogenic and nematogenic properties, and the 14th and 16th members show only nematogenic property. While in series (B), 1st to 10th members show nematogenic properties, 11th member shows both smectogenic and nematogenic properties, while 12th member shows only smectogenic property. Thermal stability of series (A) is relatively high as compared to series (B). Transition temperatures are observed through hot stage polarizing microscope by the miscibility method. Analytical data support the structure of molecules. Textures of series (A) in nematic are threaded and Schlieren in SmecticSmectic A type, while that of series (B) in nematic are threaded in SmecticSmectic A and smectic C.     

Crystal Structure of Three Isomorphous Compounds of 2,5-Dibromopyridine with Tetrahalometalate(II) Ions

Abstract  Three salts of 2,5-dibromopyridinium with metal halides, (C₅H₄Br₂N)₂[CuCl₄], (I); (C₅H₄Br₂N)₂[CuBr₄], (II); and (C₅H₄Br₂N)₂[CdBr₄], (III), are isomorphous in C2/c with cell volumes 1864.5(8), 1974.6(4) and 2072.9(7) ?³, respectively. For the Cu cases (I) and (II) the discrete [MX₄]²⁻ anions are strongly distorted with max/min tetrahedral angles of 131.19(8)°/99.67(9)° and 130.24(5)°/99.36(11)°, respectively. For the Cd case (III) the distortion is much less with max/min tetrahedral angles of 115.97(3)°/105.99(4)°. The cations are planar. The short hal···hal contacts are for (I), aryl Br···anionic Cl 3.335(3) ? and 3.430(2) ?; for (II), aryl Br···anionic Br 3.473(2) ? and 3.567(2) ?; and for (III), aryl Br···anionic Br 3.452(1) ? and 3.675(1) ?. Longer aryl Br···aryl Br contacts (3.842(2) ? to 3.967(2) ? are present in the three isomorphs. Bifurcated hydrogen bonding to two anionic halides exist in the three structures with N–H···Cl 3.365(8) ? and 3.379(7) ? in (I), N–H···Br 3.539(11) ? and 3.425(11) ? in (II), and N–H···Br 3.426(5) ? and 3.387(5) ? in (III). Short ring contacts exist with the perpendicular distances between mean cation planes in (I), (II), and (III) of 3.68(6) ?, 3.56(1) ? and 3.72(1) ?, respectively. Index Abstract  An analysis is made of the competition between hydrogen bonding, halogen–halogen and halogen–halide interactions as well as differences between [CuX₄]²⁻ and [CdX_4] ²⁻ polydedra in the structures of the three isomorphs.      

Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe

The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, based on the thermodynamic equilibrium established at the solid-vapor interface. The regions for the single condensed phase of ZnTe(s) and of ZnSeTe(s) have been investigated, respectively. Additionally, the growth conditions of appearance for the double condensed phase of ZnTe(s) + Zn(s or ) and ZnTe(s) + Te(s or ) for the ZnTe system, of ZnSeTe(s) + Zn(s or ) and ZnSeTe(s) + Te(s or ) for the ZnSeTe system are discussed.     

六方Fe2Ge合金块体及其(001)表面电子结构和磁性的第一性原理

采用基于密度泛函理论第一性原理的赝势平面波方法,计算了块体Fe₂Ge及其(001)表面的电子结构和磁性。考虑了两种类型的终端(001)表面:Ge(Ⅰ)-(001)表面和Ge(Ⅱ)-(001)表面。电子结构方面,不同类型的Fe₂Ge(001)表面都表现出金属特性,这与块体的金属性保持一致。通过计算它们的自旋极化率,得出Ge(Ⅰ)-(001)表面的自旋极化程度最高。磁性方面,在块体和Ge(Ⅱ)-(001)表面的Ge原子是铁磁自旋有序的,而在Ge(Ⅰ)-(001)表面第一层的Ge原子是亚铁磁自旋有序的。此外,Ge(Ⅱ)-(001)表面Ge原子的自旋磁矩优于块体中和Ge(Ⅰ)-(001)表面Ge原子的自旋磁矩。这些结果与Fe的d态和Ge的p态电子的杂化有关,本文中通过分析它们的态密度进行了讨论。     

Influence of substrate and film thickness on structural,optical and electrical properties of ZnO thin films

Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of 450 °C. It has been found that the average growth rate on Si (100) substrate (8.6 nm/min) is higher than that on Sapphire (0001) substrate (2.6 nm/min) in an identical growth condition which clearly shows the virtual role of substrates. The lower growth rate on Sapphire (0001) suggests that the increasingly ordered and uniform growth due to less lattice mismatch. The grown films have been characterized by X‐ray diffraction (XRD), Reflectance, Photoluminescence (PL) and Hall measurements. The XRD result (FWHM) reveals that for lower growth time, the films grown on Si (100) is better than on Sapphire (0001). Conversely, for higher growth time, the films grown on Sapphire (0001) is better than on Si (100). The variation of strain behavior due to thickness on both substrates has been justified by UV‐Vis reflectance, photoluminescence and Hall effect measurements. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

碳化气体引入温度对3C-SiC薄膜生长的影响

通过低压化学气相沉积方法,在Si(100)衬底上生长了高度择优取向的3C-SiC(100)薄膜.SiC(200)峰的摇摆曲线表明SiC薄膜的结晶质量随着丙烷气体引入温度(Tgi)的升高而增加.选区电子衍射像表明高Tgi下生长的薄膜比低Tgi下生长的薄膜具有更好的取向.典型的SiC薄膜高分辨像中观察到了孪晶和层错.表面场发射扫描电镜像表明随着Tgi的升高,SiC薄膜的表明形貌发生了改变.     

Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

The crystalline quality of aluminum nitride (AlN) epilayers grown on sapphire substrates by MOCVD was improved by increasing hydrogen flow rate during the high temperature growth process. The AlN epilayer exhibited a root mean square (rms) of roughness was 1.944 nm from the 2×2 µm² size atomic force microscopy (AFM) images. Full widths at half maximum (FWHMs) of (002) and (102) rocking curves of triple‐axis high resolution X‐ray diffraction (HRXRD) measurements were as narrow as 28.8 arc sec and 868 arc sec, respectively. The optical transmittance spectra showed a sharp absorption edge at a wavelength of 200 nm and strong Fabry‐Perot (FP) oscillations. It is proposed that the improvement in crystalline quality is due to the surface in the low‐temperature aluminum nitride (LT‐AlN) buffer layer is promoted to be stable Al‐polarity by the conditions of increasing hydrogen flow rate and ramping up the growth temperature. Addtionally, the parasitic reactions are effectively suppressed by increasing the hydrogen flow rate during the growth process of high temperature. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure of the growth surface of silicon carbide obtained by sublimation

Structural study of polycrystalline silicon carbide obtained by sublimation performed via X-ray luminescence and X-ray diffraction analysis. It is shown that chemical vapor deposition of silicon carbide results in the formation of grains with the (00.1), (01.1), and (12.3) crystallographic planes parallel to the growth surface. The grains with the (00.1) growth planes are characterized by perfect structure and by red luminescence. Domains with yellow luminescence have a mosaic structure with the (01.1) and (12.3) growth planes.     

Transport and mechanical properties of double-walled carbon nanotubes as a function of interwall distance

We present an accurate theoretical technique to investigate electronic, electrical, mechanical and optical characteristic of metal@semiconductor ((4,0)@(8,0)) and metal@metal ((6,0)@(12,0)) double-walled carbon nanotubes. The simulation was conducted in the framework of a combination of DFT and Non-Equilibrium Green's Function (NEGF). The outputs reinforced that by decreasing interwall distance the π-conjugate delocalized electrons movement and the transmission characteristics of these sort of nanotubes are affected. Moreover, the obtained results showed the stability of double-walled CNTs with small interlayer distance due to the compatibility of the rotational symmetry of inner and outer tubes. Nevertheless, the electrical conductivity of (4,0)@(8,0)DWCNTs is extraordinary less than (6,0)@(12,0) DWCNTs and those of their internal and external SWCNTs separately. However, Young's modulus of DWCNTs (4,0)@(8,0) remained in Tetra Pascal range.     

The X-ray crystal structures of three bis(cyclopentadienyl)titanium(IV) derivatives

The X-ray crystal structures of (aqua)bis(cyclopentadienyl)chlorotitanium(IV) trifluoromethanesulfonate, bis(aqua)bis(cyclopentadienyl)titanium(IV) bis(trifluoromethanesul-fonate) and bis(cyclopentadienyl)bis(trifluoromethanesulfonato)titanium(IV) show a pseudo-tetrahedral array of Cp ring centroids and oxygen or oxygen and chloride donors around titanium, and varied long-range packing motifs dependent on the availability of hydrogen bond acceptors within the lattice.