Mechanism of fluorescence energy transfer in aqueous solution cadmium sulfide quantum dots

Cadmium sulfide (CdS) quantum dots (QDs) prepared by a convenient chemical method have been characterized using absorption, fluorescence, and photoluminescence excitation techniques. The photoluminescence excitation studies show that there is an electron transfer from the surface adsorbate (thiourea) to CdS QDs in aqueous solution. The excitation band with peak maximum at 5.8 eV is assigned to the electronic transitions in the chemisorbed thiourea, whereas the excitation band between 3.45 and 3.7 eV corresponds to the band-to-band transition within the nanocrystalline CdS host. The absorption spectroscopy of the CdS QD solutions shows a strong absorption peak which is generated from thiourea. The band-edge fluorescence of the CdS QDs has also been investigated. It is shown that the fluorescence property of the CdS QDs can be enhanced by adding cadmium chloride (CdCl₂) solution.     

Controlling the energy transfer between near-field optically coupled ZnO quantum dots

We performed time-resolved spectroscopy of ZnO quantum dots (QD), and observed exciton energy transfer and dissipation between QD via an optical near-field interaction. Two different sizes of ZnO QD with resonant energy levels were mixed to test the energy transfer and dissipation using time-resolved photoluminescence spectroscopy. The estimated energy transfer time was 144 ps. Furthermore, we demonstrated that the ratio of energy transfer between the resonant energy states could be controlled.     

Band-gap bowing and p-type doping of (Zn,Mg, Be)O wide-gap semiconductor alloys: a first-principles study

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap difference. We select an ideal N atom with lower p atomic energy level as dopant to perform p-type doping of ZnBeO and ZnMgBeO alloys. For N doped in ZnBeO alloy, we show that the acceptor transition energies become shallower as the number of the nearest neighbor Be atoms increases. This is thought to be because of the reduction of p-d repulsion. The N_O acceptor transition energies are deep in the ZnMgBeO quaternary alloy lattice-matched to GaN substrate due to the lower valence band maximum. These decrease slightly as there are more nearest neighbor Mg atoms surrounding the N dopant. The important natural valence band alignment between ZnO, MgO, BeO, ZnBeO, and ZnMgBeO quaternary alloy is also investigated.     

Mode-locked diode-pumped vanadate lasers operated with PbS quantum dots

The use of glasses doped with PbS nanocrystals as intracavity saturable absorbers for passive Q-switching and mode locking of c-cut Nd:Gd_0.7Y_0.3VO₄, Nd:YVO₄, and Nd:GdVO₄ lasers is investigated. Q-switching yields pulses as short as 35 ns with an average output power of 435 mW at a repetition rate of 6–12 kHz at a pump power of 5–6 W. Mode locking through a combination of PbS nanocrystals and a Kerr lens results in 1.4 ps long pulses with an average output power of 255 mW at a repetition rate of 100 MHz.     

Effect of the intermolecular thermal motions on the tail of the electronic density of states in polyacene crystals

The thermal fluctuation of the intermolecular hopping integral in the series of polyacene crystals (naphthalene, anthracene, tetracene, pentacene) was evaluated computationally using a combined molecular dynamics and quantum chemistry approach. It was shown that these large fluctuations can manifest themselves in a temperature-dependent relatively broad tail of the density of states extending from the valence band into the gap. It was also shown that this tail accounts for a large fraction of all states in the valence band and therefore it may be essential for accurately describing the charge transport and optical properties.     

Size-dependent radiative emission of PbS quantum dots embedded in Nafion membrane

PbS quantum dots (QDs) have been incorporated in a Nafion membrane, where the QD sizes were adjusted by changing the reaction time due to the steady growing process. The radiative emissions of the samples were investigated by optical absorption, photoluminescence (PL), and time-resolved PL spectroscopy. Size-tunable emissions are shown by the PL spectrum in a range of 1.84–1.65 eV, and the emission mechanism was investigated based on a four-band envelope-function model. Possible energy transitions for the radiative emission are listed. The PL lifetime depending on the particle size is about one microsecond, and PL decay curves exhibit a trend of decreasing decay time with an increase of the PbS QD size.     

Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine

Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm²/V s was achieved, which is comparable to that of single-crystal CuPc devices (0.1–1 cm²/V s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed.     

Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors

We describe experiments investigating the quality of ohmic contacts to both bulk GaN and to III-nitride heterostructures. Titanium-based contacts were investigated to assess the role of intermixing and surface impurities for contact formation to n-type GaN. Direct contact to the two-dimensional electron gas in GaN/AlGaN heterostructures was also studied. These contacts were made by photochemical etching of the samples to expose the heterointerface. It was observed that even in the latter case contact annealing leads to a lower contact resistance by consuming surface contaminants and promoting beneficial interfacial reactions. Various passivation techniques were tried to reduce surface leakage current between contact pads and PECVD-deposited silicon nitride was found to be the best material for this application.     

High-performance,continuous-wave quantum-cascade lasers operating up to 85°C at <Emphasis Type="Italic">λ</Emphasis>∼8.8 μm

High-temperature, high-power, and continuous-wave (CW) operation of quantum-cascade lasers with 35 active/injector stages at λ∼8.85 μm above room temperature is achieved without using a buried heterostructure. At this long wavelength, the use of a wider ridge waveguide in an epilayer-down bonding scheme leads to a superior performance of the laser. For a high-reflectivity-coated 21 μm×3 mm laser, the output power of 237 mW and the threshold current density of 1.44 kA/cm² at 298 K under CW mode are obtained with a maximum wall-plug efficiency of 1.7%. Further improvements were observed by using a 4-mm-long cavity. The device exhibits 294 mW of output power at 298 K and it operates at a high temperature, even up to 358 K (85°C). The full widths at half-maximum of the laser beam in CW operation for the parallel and the perpendicular far-field patterns are 25°and 63°, respectively.     

Thermodynamic model of metal-induced self-assembly of Ge quantum dots on Si substrates

We have investigated the nucleation thermodynamics and kinetics of the Ge quantum dot (QD) self-assembly on the Au-patterned Si substrates based on the surface chemical potential theory. It is find that the minimum chemical potential on the substrate surface is located at the center site of the square lattice constructed by Au islands, which indicates that the nucleation of QD is thermodynamically favorable at the center site. The nucleation probability of QD at the center site is kinetically calculated by the mechanochemical potential-based approach. The influence of the surface orientation of Si substrates on the QD shape is addressed by the surface chemical potential theory.     

Propagation of cylindrical shock waves in a rotating atmosphere under the action of monochromatic radiation

Summary  A model of cylindrical shock waves is discussed in a non-uniform rotating atmosphere under the action of monochromatic radiation. We have assumed that the radiation flux moves through a rotating gas with constant intensity and the energy is absorbed only behind the shock wave which moves in opposite direction to the radiation flux.     

Ag–N dual-accept doping for the fabrication of p-type ZnO

P-type ZnO was realized by dual-doping with nitrogen and silver via electrostatic-enhanced ultrasonic spray pyrolysis. The structural, electrical, and optical properties were explored by XRD, Hall-effect, and optical transmission spectra. The resistivity of ZnO:(N,Ag) film was found to be 56 Ω cm⁻¹ with the high mobility of 76.1 cm²/V s. Compared with ZnO:Ag film, ZnO:(N,Ag) film exhibited a higher and more stable optical transmittance.     

Control of electrical resistance of TiO2 films by short-pulse laser irradiation

Titanium dioxide (TiO₂) films were irradiated with a femtosecond laser beam to alter their electrical resistances. The TiO₂ film was produced by aerosol beam deposition. The wavelength, pulse duration, and repetition rate of the femtosecond laser scanned across the sample surface were 800 nm, 100 fs, and 1 kHz, respectively. By attenuating the laser fluence on the TiO₂ film, a range was found in which the electrical resistance of the TiO₂ film was varied even though the morphology of the film surface was not changed.     

Radioactive ion beam post-acceleration at ISAC

ISAC at TRIUMF is a world-class facility for the production and post-acceleration of radioactive ion beams (RIB). Commissioned in 2002 the ISAC I linear accelerator serves three different beam lines delivering both stable and radioactive species. Two of them are permanent experiments (DRAGON and TUDA); the third one is a general purpose station (GPS). The maximum energy we can reach in ISAC I is 1.8 MeV/u. ISAC II is a phased upgrade of the ISAC facility. The beam coming from ISAC I is injected at 1.5 MeV/u into a new superconducting LINAC. In `Phase I' the LINAC adds 20 MV to the beam energy and 20 MV more will be added in `Phase II'. The paper will give an overview of both the ISAC I and ISAC II accelerators. Operational experience with accelerating RIBs in ISAC I is summarized. First ISAC II commissioning results are presented.     

Physics opportunities with the RI Beam Factory at RIKEN

The RI Beam Factory (RIBF) is presently the top world-class radioactive-isotope (RI) beam facility in the world. Construction of the factory is now in the process of being completed. This facility is based on the in-flight method to produce fast RI beams. High-energy and intense primary beams accelerated by a superconducting ring cyclotron (SRC) are converted, via the projectile fragmentation or fission reaction channels, to RI beams at a new fragment separator called BigRIPS. Construction of major experimental installations is expected to commence in 2007. Physics opportunities with the RIBF are discussed herein.     

Bias stress effect in low-voltage organic thin-film transistors

The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the time-dependent threshold voltage shift to a stretched exponential function, both the maximum (equilibrium) threshold voltage shift and the time constant of the threshold voltage shift were determined for each drain-source voltage. It was found that both the equilibrium threshold voltage shift and the time constant decrease significantly with increasing drain-source voltage. This suggests that when a drain-source voltage is applied to the transistor during gate bias stress, the tilting of the HOMO and LUMO bands along the channel creates a pathway for the fast release of trapped carriers.     

Preparation of phosphors AEu(MoO4)2 (A?=?Li, Na, K and Ag) by?sol-gel method

A series of double molybdates phosphors AEu(MoO₄)₂ (A = Li, Na, K and Ag) have been prepared by sol-gel method. Their crystal structure and luminescent properties have also been investigated in a comparable way. The crystallization processes of the phosphor precursors were characterized by X-ray diffraction (XRD) and thermogravimetry-differential thermal analysis (TG-DTA). Field emission scanning electron microscopy (FE-SEM) was also used to characterize the shape and size distribution of the phosphors. Samples except KEu(MoO₄)₂ showed tetragonal scheelite structure in the range of our experiments, and no phase transition appeared. Phosphor KEu(MoO₄)₂ possessed two structures, and the phase transition took place at about 800°C. All samples with high purity could be obtained at about 500°C for 5 hours, and they all showed intense red light peaked at 616 nm originated from ⁵D₀→⁷F₂ emission of Eu³⁺ under the excitation of 465 nm or 394 nm light. The excitation spectra of phosphors AEu(MoO₄)₂ (A = Li, Na, and K) are composed of a strong broad charge transfer (CT) band and some sharp lines, and the relative intensity of CT band, the two strongest absorption lines at 395 nm and 465 nm are comparative, so these three phosphors are good red phosphor candidates for violet or blue LEDs. For the excitation spectrum of phosphor AgEu(MoO₄)₂, intensities of CT band and the absorption line at 395 nm are much weaker than that of line at 465 nm, thus phosphor AgEu(MoO₄)₂ is only suit for GaN-based blue LED.     

Modelocked quantum dot vertical external cavity surface emitting laser

We report the first successful modelocking of a vertical external cavity surface emitting laser (VECSEL) with a quantum dot (QD) gain region. The VECSEL has a total of 35 QD-layers with an emission wavelength of about 1060 nm. In SESAM modelocked operation, we obtain an average output power of 27.4 mW with 18-ps pulses at a repetition rate of 2.57 GHz. This QD-VECSEL is used as-grown on a 450 μm thick substrate, which limits the average output power.     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.