Measurement of bunch length evolution in electron beam macropulse of S-band linac using coherent edge radiation

Intense coherent edge radiation (CER) with a power of 0.10 mW was observed in a straight line with an undulator of Kyoto University Free Electron Laser (KU-FEL). To investigate the evolution of a bunch length in a macropulse of an electron beam, a technique was developed using the CER beam. The measured air-extracted CER beam profile has a hollow structure resembling the first-order Laguerre–Gaussian mode with asymmetric intensity in horizontal direction. It roughly agrees with the profile calculated considering the effective area of a deflection mirror employed to extract the beam from the FEL optical cavity into air. The root-mean-squared (RMS) bunch length determined from a measured spectrum of the CER beam is 60 μm for an electron-beam macropulse. Changes in the CER intensity in the electron-beam macropulse were measured by diode detectors with short time constants at two frequencies. The evolution of the RMS bunch length was determined using the ratio of the CER intensity at the two frequencies. It could be concluded that the evolution correlated with the macropulse structure of the FEL power. Therefore, measuring the evolution of the CER intensity at multiple frequencies proved useful to control FEL macropulses.     

Luminescence of CdS crystals due to near-surface potential fluctuations

The nature of the wide emission band observed in the low-temperature (T ≤ 60 K) near-edge photoluminescence spectra of CdS crystals placed in water and irradiated by a He-Cd laser has been investigated. The spectral and temporal characteristics of the band and its dependence on temperature, excitation intensity, and transverse electric field are considered. The relationship between the band and the radiative recombination of carriers localized on near-surface potential fluctuations, which are due to the defect-forming character of the joint effect of laser irradiation and water on near-surface layer of semiconductor is grounded.     

CdSe/ZnSe复合结构非对称量子阱的发光特性

利用MOCVD技术在GaAs衬底上外延生长了非对称量子阱结构CdSe/ZnSe材料,通过对其稳态变温光谱及变激发功率光谱,研究了其发光特性。稳态光谱表明:在82～141K时,观测到的两个发光峰来源于不同阱层厚度的量子阱激子发光,用对比实验验证了高能侧发光的来源。宽阱发光强度先增加后减小,将其归结为激子隧穿与激子热离化相互竞争的结果。通过Arrhenius拟合,对宽阱激子热激活能进行了计算。82K时变激发功率PL光谱表明:由于激子隧穿的存在,使得窄阱发光峰位不随激发功率变化而变化,宽阱发光峰位随激发功率增加发生了蓝移,并对激子隧穿进行了实验验证。     

ZnCdSe/ZnSe非对称双量子阱中的光学特性研究

用LP-MOCVD技术在GaAs衬底上外延生长了ZnCdSe/ZnSe非对称双量子阱(ADQW)结构。通过ps时间分辨光谱、吸收光谱、发射光谱等的研究得到了如下的结果:在弱激发下,观测到ADQW结构中的激子隧穿现象;在强激发下,在ADQW结构中发现了一个内建电场,它将影响激子隧穿;首次观测到由激子隧穿引起的在一定温度范围内宽阱的发光强度随温度上升而增加的现象;首次观测到该ADQW结构中来自宽阱的光泵受激发射。     

气相外延ZnSe单晶膜的自由激子发光

本文在77K和N2激光器3371谱线高密度激发的VPE ZnSe单晶膜上,首次得到了起因于自由激子与自由激子(Ex-Ex)散射的发光谱带(P带),理论拟合了该谱带的形状并讨论了它的发光特性。文中把在选择的VPE ZnSe外延单晶膜中得到P带的起因归结为这些ZnSe外延单晶膜的质量较高。     

The luminescence of II–VI compounds with blende type structure under high excitation

The luminescence of ZnSe is investigated as a function of excitation intensity for temperatures between 5 K and 300 K. At low excitation we observe emission due to free and bound excitons and due to donor-acceptor pair recombination. At higher excitation, the emission is dominated by inelastic exciton-exciton and exciton-free carrier scattering at lower and higher temperatures, respectively. A “M-band” observed in ZnSe and ZnTe is tentatively ascribed to a biexciton decay. The biexciton binding energies are 2±1 meV for ZnSe and 1,5±1 meV for ZnTe.     

Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

The field emission injection of low-energy electrons (E _e ?? 10 eV) into the ZnSe/CdSe/ZnSe heterostructure has been considered. The probe of the ultra-high-vacuum tunneling microscope has been used as a field emitter. It has been shown that the energy of injected electrons is sufficient for impact ionization in ZnSe. The impact ionization creates a high concentration of nonequilibrium carriers in the near-surface ZnSe layer. The transport of nonequilibrium carriers in the heterostructure under study has been simulated. The electric field of the near-surface space charge and surface recombination have been taken into account. The calculation has demonstrated that filling the active region of CdSe with nonequilibrium carriers is highly efficient.     

Implantation of ytterbium ions into group II-VI compounds

50 keV ytterbium ions have been implanted into ZnS, CdS, ZnSe, CdTe, CdSe and ZnTe and, after subsequent annealing treatments of varying degree, the cathodoluminescence emission spectra produced by 10 keV or 100 keV electron excitation have been studied.     

Excitonic processes and lasing in ZnSSe/ZnSe superlattices

We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superlattices, by time resolved luminescence and high excitation intensity magaetoluminescence. The stimulated emission is found to have excitation origin from localized states around the thresold, and free-carrier origin at carrier densities well above the phase space filling thresold of the exciton.     

Room-temperature electroluminescence in the mid-infrared (2-3 microm) from bulk chromium-doped ZnSe

Electroluminescence associated with impact excitation or ionization of deep Cr(2+) impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 microm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.     

Time-resolved impact ionization in ZnSe high-voltage switches

Fast electrical streamer and glow avalanches in ZnSe semiconductors are investigated, for applications in fast spontaneous or triggered switches. We present time-resolved observations of these self-sustained, impact ionization events in bulk polycrystalline ZnSe at room temperature. Under high voltages (~20 kV) short-current pulse (~3 ns) electrical excitation, the 1 ns risetime current pulses cause the emission of the bandgap radiation, which in turn is used to characterize the role of the plasma during the switching interval. Using a picosecond resolution streak camera, plasma streamers were recorded, in undoped ZnSe, and a uniform glow was observed in n-doped samples for the duration of the 3 ns, 1 kA current pulse. This paper concerns the behavior of the avalanche breakdown mechanism, which is relevant for applications in high energy switches, and we will discuss the possibility of using the avalanche process to pump high-power light-emitting semiconductor devices     

双光子激发ZnSe自由载流子超快动力学研究

采用Z扫描和抽运-探测实验技术, 在波长为532 nm、脉冲宽度为41 fs的条件下测得ZnSe晶体的双光子吸收系数, 并获得了不同激发光强下的自由载流子吸收截面、电子-空穴带间复合时间和电子-声子耦合时间. 研究发现, 随着激发光强的增大, 自由载流子吸收截面减小, 复合时间变短. 当激发光强增大导致载流子浓度大于10¹⁸ cm^-3时, 抽运-探测信号出现明显改变, 原因归结为强光场激发导致样品在短时间内带隙变窄和电子-空穴等离子体的形成.     

电场调制下单量子阱ZnCdSe／ZnSe的激射行为研究

近年来,随着宽禁带Ⅱ－Ⅵ族半导体激光器取得突破性进展［１］,对ＺｎＳｅ基超晶格与量子阱的受激发射也进行了广泛的研究［２,３］,同时对电场调制下的ＺｎＳｅ基超晶格的受激发射也有过报导［４］．但对于电场调制下的ＺｎＣｄＳｅ／ＺｎＳｅ基单量子阱的激射行为研...     

浅ZnCdSe/ZnSe量子阱的光泵受激发射

本文主要研究浅ZnCdSe/ZnSe单量子阱在77K温度下的光致发光。在不同激发密度下,讨论了该结构的发光机制,把77K温度下的受激发射归结为是激子-激子散射所引起的。文中还分析了在浅ZnCdSe/ZnSe量子阱中能够实现与激子相关的受激发射的原因。     

低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光     

Mixing of singlet and triplet exciton states in highly excited CdS

Fluorescence spectra due to the free excitons have been studied in CdS at 4.2 K under various excitation levels. It has been found that the triplet-exciton emission intensity relative to the singlet line is enhanced remarkably with the excitation power density. This effect is reasonably explained by the mixing of the singlet with the triplet through the many body interaction. The density of optically generated excitons is determined from the magnetic field dependence of the triplet emission intensity.     

谷胱甘肽包被的CdSe/CdS量子点的直接水相制备及其对人血淋巴细胞的标记成像

首次用谷胱甘肽(GSH)作为稳定剂,在水溶液中制备了稳定地发射绿色荧光和橙色荧光的两种 CdSe/CdS核/壳结构的纳米量子点。用紫外-可见分光光度和荧光光谱方法研究了CdSe/CdS量子点的发光特性。透射电镜(TEM)结果表明CdSe/CdS量子点近似球形,在水中分散性良好,比CdSe量子点具有更优异的发光特性,发射光谱和吸收光谱都有红移现象。将CdSe/CdS量子点与鼠抗人CD3抗体连接,制备了水溶性CdSe/CdS-CD3复合物探针,对人血淋巴细胞进行标记和成像。结果表明用该探针对人血淋巴细胞成像清晰,其荧光在30 min的连续蓝光激发下无明显衰退,而FITC荧光在20 min内基本完全猝灭。     

Temperature induced size selective synthesis of hybrid Cds/pepsin nanocrystals and their photoluminescence investigation

There is growing interest in materials chemistry for taking advantage of the physical and chemical properties of biomolecules in the development of next generation nanoscale materials for opto-electronic applications. A biomimetic approach to materials synthesis offers the possibility of controlling size, shape, crystal structure, orientation, and organization. The great progress has been made in the control that can be exerted over optical materials synthesis using biomolecules (protein, nucleic acid)/mineral interfaces as templates for directed synthesis. We have synthesized the CdS nanocrystals using pepsin by biomimetic technique at four different set temperatures. X-ray diffraction (XRD) and small angle X-ray scattering (SAXS) results showed that we are able to tune the size and distribution profile just by tuning the reaction (Rx) temperature and goes towards excitonic Bhor radius (2.5 nm) at low temperature (4 °C). The narrow absorption peak at 260 nm from Cd²⁺-pepsin complex dominates and indicates the size dispersion of the modified CdS nanoparticles are fairly monodisperse. Effective mass approximation (EMA) shows large blue-shift (~1 eV) in the band gap for the cubic phase from bulk hexagonal CdS. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra are dominated by a strong and narrow band-edge emission tunable in the blue region indicating a narrow size distribution. The reduction in PL efficiency is observed when the Rx temperature increases however no change in PLE spectra and temporal profiles of the band-edge PL is observed. At 4 °C, high emission efficiency with shift of PL spectrum in the violet region is observed for 1.7 nm size CdS quantum dots (QDs). Presence of pepsin has slowed the PL decay which is of the order of 100 μs.     

Photoluminescence and magneto-optical properties of multilayered type-II ZnTe/ZnSe quantum dots

Multilayered Zn–Se–Te structures grown by migration enhanced epitaxy are studied by temperature- and excitation-dependent photoluminescence (PL) as well as magneto-PL. The PL consists of two bands: a blue band, overlaid with band edge sharp lines, dominant at low temperatures and high excitation, and a green band, which appears at elevated temperature and low excitation. Upon varying excitation intensity by four orders of magnitude, the green band peak energy shifts by ∼60 meV, indicating recombination of excitons in type-II quantum dots (QDs); no significant shift is observed for the blue band. Therefore, the green emission is attributed to ZnTe/ZnSe type-II QDs, which co-exist with isoelectronic centers, responsible for the blue and band edge emissions. The existence of type-II ZnTe/ZnSe QDs is further confirmed by magneto-PL, for which the observed oscillations in the PL intensity as a function of magnetic field is explained in terms of the optical Aharonov–Bohm effect.     

CdS量子点的酿酒酵母仿生合成及光谱表征

以酿酒酵母为载体,常温下利用仿生法成功合成了CdS量子点。荧光发射光谱、紫外吸收光谱以及荧光显微镜照片证明,该方法合成的CdS量子点的荧光发射峰位置在443nm,在紫外灯下能发蓝绿色荧光。透射电子显微镜(TEM)表征结果表明,该仿生法合成的CdS量子点为六方纤锌矿结构。以荧光发射和紫外吸收光谱为性能指标,考察了酿酒酵母生长时期、Cd2+的反应浓度以及反应时间等条件对合成CdS量子点的影响。当酿酒酵母处于生长稳定期初期时,与浓度为0.5mmol.L-1的Cd2+共培养24h后所合成的CdS量子点荧光最强。实验中观察到,换液培养可有效提高酿酒酵母合成CdS量子点的产量。