Development of silicon nitride fiber from Si-containing polymer by radiation curing and its application

A silicon nitride fiber (Si₃N₄) was synthesized from polycarbosilane (PCS) fiber by radiation application. PCS fibers were cured by electron beam (EB) irradiation in a helium gas atmosphere prior to the pyrolysis. The cured PCS fiber was converted to Si₃N₄ ceramic fiber with flexibility by nitridation in ammonia gas at a high temperature of 500–1000°C. The obtained Si₃N₄ fibre showed a high heat resistance up to 1300°C, a high tensile strength of 2 GPa and excellent electrical resistivity of 10¹³ Ω cm. The ceramic fiber was fabricated to cloth and applied for electric wire insulator. The wire cable is flexible and can be applied at a high temperature atmosphere of around 1000°C.     

Superlubricity behaviors of Si3N4/DLC Films under PAO oil with nano boron nitride additive lubrication

The tribological properties of Si₃N₄ ball sliding against diamond‐like carbon (DLC) films were investigated using a ball‐on‐disc tribometer under dry friction and oil lubrications, respectively. The influence of nano boron nitride particle as lubricant additive in poly‐α‐olefin (PAO) oil on the tribological properties of Si₃N₄/DLC films was evaluated. The microstructure of DLC films was measured by Raman spectroscopy and X‐ray photoelectron spectroscopy. The experimental results show coefficient of friction (COF) of Si₃N₄/DLC films was as low as 0.035 due to the formation of graphite‐like transfer films under dry friction condition. It also indicates that the tribological properties of Si₃N₄/DLC films were influenced significantly by the viscosity of oil and the content of nano boron nitride particle in PAO oil. COF increases with the viscosity of PAO oil increasing. Si₃N₄/DLC films exhibit the superlubricity behaviors (μ=0.001 and nonmeasurable wear) under PAO 6 oil with 1.0 wt% nano boron nitride particle lubrication, indicating that the improved boundary lubrication behaviors have indeed been responsible for the significantly reduced friction. Nano boron nitride additive is used as solid lubricant‐like nano scale ball bearing to the pointlike contact and a soft phase bond with the weak van der Waals interaction force on the contact surface to improve the lubrication behaviors of Si₃N₄/DLC films. The potential usefulness of nano boron nitride as lubricant additive in PAO oil for Si₃N₄/DLC films has been demonstrated under oil lubrication conditions. The present work will extend the wide application of nano particle additive and introduce a new approach to superlubricity under boundary lubrication in future technological areas. Copyright © 2013 John Wiley & Sons, Ltd.     

Combined bulk and surface analysis of oxygen species in Si3N4 powders by means of carrier-gas heat-extraction methods and Auger electron spectrometry

Summary By means of the addition of 1%(v/v) C₂H₄ to He carrier gas and by application of a temperature ramp starting from 100°C in the carrier-gas heat-extraction technique, discrimination between two siloxane species in Si₃N₄ is feasible. By comparison with Auger electron spectrometry data, one species can be assigned to the surface and the other to bulk siloxane. This is demonstrated by means of two differently manufactured Si₃N₄ powders which are HF-etched or oxidized so that their — predominantly near-surface — oxygen content is decreased or increased, respectively. Additional oxygen speciation can be achieved by means of thermo-desorption of oxygen bound to hydrogen and carbon in Ar between room temperature and about 1000°C.     

Random-Walk Aggregation Phenomena in Solid Bimodal Liquid Dispersions: Transition to Nondeterminism from Si3N4to Si3N4+ Al2O3Aqueous Systems

This paper, which is based on another recent work, (Mezzasalma, S. A.,Phys. Rev. E55(4), (1997)) deals with experiments and theory concerning an aqueous dispersed system formed from silicon nitride (Si₃N₄), alumina (Al₂O₃), and mixed silicon nitride + alumina (Si₃N₄+ Al₂O₃) solid agglomerates. From titration data applied to a thermodynamic equilibrium condition, the minimum number of each agglomerate species and their maximal average dimensions have been derived as functions of the aqueous solution pH. These parameters are of the order of, respectively, (1–2) μm for Si₃N₄and Al₂O₃agglomerates and (20–50) μm for the mixed agglomerates. The numbers of solid particles of all species are poorly correlated with changes in pH of the liquid phase. This behavior has been interpreted as intrinsically related to the complexity of the system which, due to the many interactions among the different species, probably becomes nondeterministic. In order to describe such behavior a probabilistic approach has been developed. The probability of finding a given solid agglomerate number within a scatter band varies with the suspension pH. Furthermore, the scatter band amplitude becomes negligible near the isoelectric point. Accordingly, only the numbers of aggregates derived in the neighborhood of the isoelectric point are predictable.     

Micro-thermal analysis of thermal conductance distribution in advanced silicon nitrides

A micro-thermal analysis technique was applied to investigate advanced silicon nitride materials, which exhibit high thermal conductivity. Local thermal properties in the microstructure were evaluated, and the grain boundaries were observed to have lower thermal conductance than the Si₃N₄ grains. It was found that thermal conductance both in the grains and boundaries was lowered by the addition of the sintering aid Al₂O₃, which is soluble in Si₃N₄ grains. This indicates that high thermal conductivity in silicon nitride ceramics is achieved both by grain growth, leading to a reduction in boundary density, and by eliminating soluble elements in silicon nitride grains. This revised version was published online in August 2006 with corrections to the Cover Date.     

Formation mechanism of Sialon in alumina-ferro-silicon-nitride composite under nitrogen atmosphere at high temperatures

Sialon bonded Al₂O₃ composites were successfully synthesized using ferro-silicon nitride and different alumina sources at 1500 °C and 1600 °C under N₂ atmosphere. Fused corundum, sintered alumina and the mixture of both were used as different alumina sources to evaluate their effects on the formation of Sialon phases. The samples were characterized by X-ray diffraction (XRD), Scanning electron microscope (SEM) and Energy-dispersive X-ray spectroscopy (EDAS). The results show that the Sialons (β-Sialon (Si₂Al₄O₄N₄) and 15R-Sialon (SiAl₄O₂N₄)) contents are dependent on the sintering temperature and alumina sources. Formation mechanism of Sialon in samples prepared with different alumina sources is different. Sintered alumina can react with Si₃N₄ directly to form Sialon. In sample prepared with fused corundum, AlON is formed first and then it reacts with Si to form Sialon. Sintered alumina exhibits better reactivity than fused corundum. Sialon is more stable than AlON under N₂ atmosphere at high temperature with the existence of carbon.     

Improved Thermal and Chemical Stability of Oxynitride Phosphor from Facile Chemical Synthesis for Vehicle Cornering Lights

Orange Eu²⁺-doped phosphors are essential for light-emitting diodes for cornering lights to prevent fatal road accidents at night, but such phosphors require features of high thermal, chemical stability and facile synthesis. This study reports a series of yellow-orange-red emitting SrAl₂Si₃ON₆:Eu²⁺ oxynitride phosphors, derived from the SrAlSi₄N₇ nitride iso-structure by replacing Si⁴⁺−N³⁻ with Al³⁺−O²⁻. The introduction of a certain amount of oxygen enabled the facile synthesis under atmospheric pressure using the air-stable raw materials SrCO₃, Eu₂O₃, AlN and Si₃N₄. SrAl₂Si₃ON₆ has a smaller band gap and lower structure rigidity than SrAlSi₄N₇ (5.19 eV vs 5.50 eV, Debye temperature 719 K vs 760 K), but exhibits higher thermal stability with 100 % of room temperature intensity remaining at 150 °C compared to 85 % for SrAlSi₄N₇. Electron paramagnetic resonance, thermoluminescence and density functional theory revealed that the oxygen vacancy electron traps compensated the thermal loss. Additionally, no decrease in emission intensity was found after either being heated at 500 °C for 2 hours or being immersed in water for 20 days, implying both of the thermal and chemical stability of SrAl₂Si₃ON₆:Eu²⁺ phosphors. The strategy of oxynitride-introduction from nitride promotes the development of low-cost thermally and chemically stable luminescent materials.     

Fabrication of new polypyrrole/silicon nitride hybrid materials for potential applications in electrochemical sensors: Synthesis and characterization

In this research, an efficient fabrication process of conducting polypyrrole (PPy)/silicon nitride (Si₃N₄) hybrid materials were developed in order to be employed as transducers in electrochemical sensors used in various environmental and biomedical applications. The fabrication process was assisted by oxidative polymerization of pyrrole (Py) monomer on the surface of Si/SiO₂/Si₃N₄ substrate in presence of FeCl₃ as oxidant. To improve the adhesion of PPy layer to Si₃N₄ surface, a pyrrole-silane (SPy) was chemically bonded through silanization process onto the Si₃N₄ surface before deposition of PPy layer. After Py polymerization, Si/SiO₂/Si₃N₄-(SPy-PPy) substrate was formed. The influence of SPy concentration and temperature of silanization process on chemical composition and surface morphology of the prepared Si/SiO₂/Si₃N₄-(SPy-PPy) substrates was studied by FTIR and SEM. In addition, the electrical properties of the prepared substrates were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). It was found that the best silanization reaction conditions to get Si/SiO₂/Si₃N₄-(SPy-PPy) substrate with high PPy adhesion and good electrical conductivity were obtained by using SPy at low concentration (4.3 mM) at 90°C. These promising findings open the way for fabrication of new hybrid materials which can be used as transducers in miniaturized sensing devices for various environmental and biomedical applications.     

Interfacial Nanobubbles on Atomically Flat Substrates with Different Hydrophobicities

The dependence of the morphology of interfacial nanobubbles on atomically flat substrates with different wettability ranges was investigated by using PeakForce quantitative nanomechanics. Interfacial nanobubbles were formed and imaged on silicon nitride (Si₃N₄), mica, and highly ordered pyrolytic graphite (HOPG) substrates that were partly covered by reduced graphene oxide (rGO). The contact angles and sizes of those nanobubbles were measured under the same conditions. Nanobubbles with the same lateral width exhibited different heights on the different substrates, with the order Si₃N₄≈mica>rGO>HOPG, which is consistent with the trend of the hydrophobicity of the substrates.     

The ternary system cerium–palladium–silicon

Phase relations in the ternary system Ce–Pd–Si have been established for the isothermal section at 800 °C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 °C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of τ₈—Ce₃Pd₄Si₄ (U₃Ni₄Si₄-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), τ₁₆—Ce₂Pd₁₄Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for τ₁₈—CePd_1−xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of τ₅—Ce₃PdSi₃ (Ba₃Al₂Ge₂-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and τ₁₃—Ce_3−xPd_20+xSi₆ (0≤x≤1, Co₂₀Al₃B₆-type, Fm3¯m; a=1.21527(2) nm). The ternary compound Ce₂Pd₃Si₃ (structure-type Ce₂Rh_1.35Ge_4.65, Pmmn; a=0.42040(1), b=0.42247(1), c=1.72444(3) nm) was detected as a high-temperature compound, however, does not participate in the equilibria at 800 °C. Phase equilibria in Ce–Pd–Si are characterized by the absence of cerium solubility in palladium silicides. Mutual solubility among cerium silicides and cerium–palladium compounds are significant whereby random substitution of the almost equally sized atom species palladium and silicon is reflected in extended homogeneous regions at constant Ce-content such as for τ₂—Ce(Pd_xSi_1−x)₂ (AlB₂-derivative type), τ₆—Ce(Pd_xSi_1−x)₂ (ThSi₂-type) and τ₇—CePd_2−xSi_2+x. The crystal structures of compounds τ₄—Ce_~8Pd_~46Si_~46, τ₁₂—Ce_~29Pd_~49Si_~22, τ₁₅—Ce_~22Pd_~67Si_~11, τ₁₇—Ce_~5Pd_~77Si_~18 and τ₁₈—CePd_1−xSi_x (x~0.1) are still unknown.     

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si₃N₄ and Si₂N₂O are formed as the nitridation products in the samples. Fibroid and short columnar Si₃N₄ are detected in the samples. The formation mechanisms of Si₃N₄ and Si₂N₂O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O₂ in N₂ atmosphere, forming a thin film of SiO₂ on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO₂ film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO₂ film will crack, and N₂ is infiltrated into the central section of the sample through cracks, generating Si₂N₂O and short columnar Si₃N₄ in situ. At the same time, metastable SiO(g) reacts with N₂ and form fibroid Si₃N₄. In the regions where the oxygen partial pressure is high, Si₃N₄ is oxidized into Si₂N₂O.     

Thermal stability and conductivity of hot-pressed Si3N4–graphene composites

This study concerns new Si₃N₄–graphene composites manufactured using the hot-pressing method. Because of future applications of silicon nitride for cutting tools or specific parts of various devices having contact with high temperatures there is a need to find a ceramic composite material with good mechanical and especially thermal properties. Excellent thermal properties in the major directions are characteristic of graphene. In this study, the graphene phase is added to the silicon nitride phase in a quantity of up to 10 mass%, and the materials are sintered under uniaxial pressure. The mixture of AlN and Y₂O₃ is added as sintering activator to the composite matrix. The studies focus on thermal stability of produced composites in argon and air conditions up to the temperature of 1,000 °C. The research also concerns the influence of applied uniaxial pressure during the sintering process on the orientation of graphene nanoparticles in the Si₃N₄ matrix. The study also presents research on anisotropy of thermal diffusivity and following thermal conductivity of ceramic matrix composites versus the increasing graphene quantity. Most of the presented results have not been published in the literature yet.     

The influence of processing parameters on the fabrication of Si3N4 wires

Silicon nitride (Si₃N₄) wires have been prepared by means of carbothermal reduction followed by the nitridation (CTRN) of silica gel containing ultrafine decomposed saccharose. The influence of temperature of reaction and mass ratio of carbon to silicon $ \left( \frac{C}{Si} \right) $ on the synthesis of Si₃N₄ wires were studied. The presence of nitrogen gas in the pores of gel at high temperature starts the CTRN reaction leading to the formation of Si₃N₄ wires. The results show that the Si₃N₄ was fully formed with two kinds of morphologies including globular and wire with a width of 100–500 nm and length of several microns at sintering temperature of 1,400 °C by employing the mass ratio of $ \frac{C}{Si} \; = \;0.5 $ . The infrared adsorption of the wires exhibits absorption bands related to the absorption peaks of Si–N bond of Si₃N₄. The thermal analysis results reveal that carbothermal nitridation reaction was completed at temperature of 1,400 °C.     

On nanocomposite fabrication: using rheology to characterize filler/polymer interactions in epoxy-based nanocomposites

The interactions that occur between an amorphous silicon nitride (Si₃N₄) nanofiller and an epoxy matrix are examined, as revealed by rheological changes in a diglycidyl ether of bisphenol-A (DGEBA)-based epoxy resin prior to curing and thermal analysis, scanning electron microscopy, and dielectric spectroscopy of the resulting amine-cured systems. The results show that isothermally heating the as-received Si₃N₄ in DGEBA at 100 °C leads to increases in the viscosity of the mixture. Analysis of rheological data obtained from unfilled, as-received Si₃N₄-filled, and calcined Si₃N₄-filled epoxy systems leads us to interpret this increase in viscosity as arising from reactions between epoxide groups of the DGEBA and nanoparticle surface groups, notably involving surface amines, which are stimulated by the elevated temperature. The extent of this filler/resin reaction depends on the material processing protocol used, particularly prior calcination of the Si₃N₄ and the temperature and duration of nanoparticle/DGEBA mixing. Glass transition temperature data show that cured samples prepared using different methods have significantly different glass transition temperatures, which is a consequence of the epoxide/amine stoichiometric imbalances that result from prior reactions between the Si₃N₄ and the DGEBA. Consistent behavior was observed in the dielectric response. These results demonstrate that ultimate macroscopic properties of Si₃N₄/epoxy nanocomposites are critically affected by details of the processing protocol. Furthermore, we infer that, by using controlled prior calcination of the Si₃N₄, it is may be possible to vary the initial surface chemistry of the nanoparticles so as to adjust their reactivity with epoxy-containing moieties. Here, this is exemplified using only two somewhat extreme thermal treatments and a bifunctional DGEBA-type compound but, we suggest, that the concept may be extended to many other mono- and polyfunctional epoxy-containing compounds in order to generate a wide range of different grafted nanoparticle systems. This strategy may provide a versatile means of adjusting the surface chemistry of inorganic nitride nanoparticles, in order to tailor their surface chemistry and thereby modify resulting nanocomposite properties.     

Missing Member in the MIIMIIISi4N7 Compound Class: Carbothermal Reduction and Nitridation Synthesis Reveal Substitution of Nitrogen by Carbon and Oxygen in CaLu[Si4N7–2xCxOx]:Eu2+/Ce3+ (x≈0.3)

The nitridosilicate CaLu[Si₄N_7–2xC_xO_x] (x≈0.3) was synthesized by carbothermal reduction and nitridation starting from CaH₂, Lu₂O₃, graphite and amorphous Si₃N₄ at 1550 °C in a radiofrequency furnace. CaLu[Si₄N_7–2xC_xO_x] (x≈0.3) crystallizes isotypically to many previously known M^IIM^IIISi₄N₇ compounds in the space group P6₃mc, as was confirmed by Rietveld refinement based on powder X-ray diffraction data. Incorporation of carbon into the crystal structure as a result of the carbothermal synthesis route was confirmed by ¹³C and ²⁹Si MAS NMR spectroscopy. For the first time in the M^IIM^IIISi₄N₇ compound class, complementary EDX measurements suggest that simultaneous incorporation of oxygen compensates for the negative charge excess induced by carbon, resulting in an adjusted sum formula, CaLu[Si₄N_7–2xC_xO_x] (x≈0.3). When excited with UV-to-blue light, CaLu[Si₄N_7–2xC_xO_x] (x≈0.3) shows an emission maximum in the blue spectral region (λ_em=484 nm; fwhm=4531 cm⁻¹) upon doping with Ce³⁺, whereas Eu²⁺-doped CaLu[Si₄N_7–2xC_xO_x] (x≈0.3) exhibits a yellow-green emission (λ_em=546 nm; fwhm=3999 cm⁻¹).     

Tailoring and investigation of surface chemical nature of virgin and ion beam modified muscovite mica

We report that the surface chemical properties of muscovite mica [KAl₂(Si₃Al)O₁₀(OH)₂] like important multi-elemental layered substrate can be precisely tailored by ion bombardment. The detailed X-ray photoelectron spectroscopic studies of a freshly cleaved as well as 12-keV Ar⁺ and N⁺ ion bombarded muscovite mica surfaces show immense changes of the surface composition due to preferential sputtering of different elements and the chemical reaction of implanted ions with the surface. We observe that the K atoms on the upper layer of mica surface are sputtered most during the N⁺ or Ar⁺ ions sputtering, and the negative aluminosilicate layer is exposed. Inactive Ar atoms are trapped, whereas chemically reactive N atoms form silicon nitride (Si₃N₄) and aluminum nitride (AlN) during implantation. On exposure to air after ion bombardment, the mica surface becomes more active to adsorb C than the virgin surface. The adsorbed C reacts with Si in the aluminosilicate layer and forms silicon carbide (SiC) for both Ar and N bombarded mica surfaces. Besides the surface chemical change, prolonged ion bombardment develops a periodic ripple like regular pattern on the surface.     

Theoretical Investigation of the Solid State Reaction of Silicon Nitride and Silicon Dioxide forming Silicon Oxynitride (Si2N2O) under Pressure

The high‐pressure behavior of Si₂N₂O is studied for pressures up to 100 GPa using density functional theory calculations. The investigation of a manifold of hypothetical polymorphs leads us to propose two dense phases of Si₂N₂O, succeeding the orthorhombic ambient‐pressure polymorph at higher pressures:a defect spinel structure at moderate pressures and a corundum‐type structure at very high pressures. Taking into account the formation of silicon oxynitride from silicon dioxide and silicon nitride and its pressure dependence, we propose five pressure regions of interest for Si₂N₂O within the pseudo‐binary phase diagram SiO₂‐Si₃N₄: (i) stability of the orthorhombic ternary phase of Si₂N₂O up to 6 GPa, (ii) a phase assemblage of coesite, stishovite, and β‐Si₃N₄ between 6 and 11 GPa, (iii) a possible defect spinel modification of Si₂N₂O between 11 and 16 GPa, (iv) a phase assemblage of stishovite and γ‐Si₃N₄ above 40 GPa, and (v) a possible ternary Si₂N₂O phase with corundum‐type structure beyond 80 GPa. The existence of both ternary high‐pressure phases of Si₂N₂O, however, depends on the delicate influence of configurational entropy to the free energy of the solid state reaction.     

From cyclotetrasilazane [(CH3)2SiNH]4 via crystalline silicon nitride imide Si2N2NH to α-Si3N4

α-Si₃N₄ is synthesized by an ammonia thermal synthesis using a cyclic oligosilazane, [(CH₃)₂SiNH]₄, as the starting material. [(CH₃)₂SiNH]₄ reacts in the presence of ammonia at 900°C and 80 MPa pressure to give silicon nitride imide (Si₂N₂NH). Subsequently, Si₂N₂NH is converted into α-Si₃N₄ by thermal decomposition at 1500°C and 0.1 MPa nitrogen with the simultaneous loss of NH₃.     

Preliminary study of some “pyro”-silico-nitrides

Two oxynitrides of the LnSiDN system were studied by IR spectroscopy : Nd₂Si₃O₃N₄, with a melilite-like structure and Nd₄Si₂O₇N₂ with a cuspidine-like structure. The first compound belongs to the space group D³_2d(P4̄2₁m) with two formula units per unit cell. There are 10 vibrations of B₂ species and 18 of E species active in the IR. A preliminary study by neutron diffraction displayed that the oxygen and nitrogen atoms are perfectly ordered, and that two silicon atoms are bridged by an oxygen. In the present work, we compare the (SiON₂)₂O IR vibrations with those of silicon oxynitride previously studied and |Si₂O₇|^6? ion in akermanite. The space group of cuspidine is C⁵_2h (P2₁/c with 4 formula units per unit cell. So, 21 vibrations of A_u species and 21 of B_u species are active in IR absorption for Nd₄Si₂O₇N₂. The absorption bands are not as sharp as the bands in Nd₂Si₃O₃N₄. This fact might be explained by a disordered structure as the nitrogen position has not been exactly determined.     

Phase diagrams of the ternary systems Mn, Fe, Co, Ni---Si---N

Phase equilibria in the ternary systems Mn, Fe, Co, and Ni---Si---N are investigated and isothermal sections at 900°C (Fe---Si---N, Ni---Si---N), at 1000°C (Mn---Si---N, Co---Si---N) and at 1150°C (Fe---Si---N) are presented. In the system Mn---Si---N, Si₃N₄ coexists with MnSiN₂, Mn₃Si, Mn₅Si₃, MnSi, and MnSi_2−x. In the systems Fe, Co, Ni---Si---N, Si₃N₄ coexists with all binary silicides but reacts rapidly with iron above 1120 ± 10°C, and cobalt and nickel above 1170 ± 10°C to form binary silicides and nitrogen gas.